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Amorphous FeBSiC thin films were deposited on PMN-PT (Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 )(001) single crystal substrate by DC magnetron sputtering. The effects of piezoelectric-poling-induced strain on the magnetic properties of the FeBSiC/PMN-PT heterostructures were investigated. Studies indicated that the non-linear strains in PMN-PT were induced by poling at different electric fields, with tensile strain for out-of-plane direction and compressive strain for in-plane direction, respectively. Moreover, the in-plane compressive strain increased the saturation magnetization of the FeBSiC thin film, while the out-of-plane tensile strain decreased it. These results could be attributed to the 109° ferroelastic domain switching at applied electric field, which induced large variation in magnetic anisotropy due to magnetoelectric coupling in the FeBSiC/PMN-PT heterostructures. This study demonstrates the non-volatile tuning of magnetism by non-linear strains of lattice induced by the piezoelectric-poling, which shows promising applications for energy efficient magnetoelectric devices. [ABSTRACT FROM AUTHOR]

Ferroelectric (FE) materials, owing to their remarkable photovoltaic effects, are one class of the most promising materials candidates for self-powered photodetectors. Here, with the pronounced rectification ratio as large as 103 at electric bias of± 1.0 V and a low dark current of 12 pA, the self-polarized Bi 0.9 Eu 0.1 FeO 3 (BEFO)/Nb-doped SrTiO 3 (NSTO) p-n heterojunctions are synthesized. It is revealed that the BEFO/NSTO p-n heterojunctions achieve the excellent photovoltaic effect with a short-circuit current as high as 0.23 μA and an open-circuit voltage of 0.41 V under the light illumination of 405 nm in wavelength and intensity of 151.7 mW/cm2. More importantly, the built-in potential in the as-prepared heterojunctions offers the self-powered photo-detecting functionality, with the high light-on/off current ratio of 2.0 × 104, high responsivity of 0.64 mA/W and sensitive detectivity D* of 1.63 × 1010 Jones, and fast response speed of 50/44 ms without external bias voltage. In particular, the super-performance with R ~ 1.97 mA/W and D*~ 5.0 × 1010 Jones in the weak incident light intensity (1.4 mW/cm2) are demonstrated, better than most previously reported FE-based self-powered photodetectors. Moreover, the devices possess good ambient stability and reproducibility. This work provides a demo for optically driven high-performance electronic devices based on self-polarized ferroelectric materials. • The self-polarized BEFO/NSTO p-n heterojunctions with the pronounced rectification ratio and a low dark current. • The BEFO/NSTO p-n heterojunctions achieve the excellent photovoltaic effect to serve as a self-powered photodetector. • The self-powered photo-detecting functionality surpass those of most previously reported FE-based self-powered photodetectors. • The devices possess good ambient stability and reproducibility. [ABSTRACT FROM AUTHOR]

The microstructures of Bi 0.85 Nd 0.15 FeO 3 ceramics were investigated by using transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), convergent-beam electron diffraction (CBED) and X-ray energy dispersive spectrometry (EDS). The superstructure phase related to 1/4( hh 0) p and 1/4(00 l ) p diffraction spots were observed in the samples. It is found that the superstructure phase can co-exist with R 3 c phase in a single grain. The bright and dark field images accompanied with SAED patterns provided evidences of the superstructure phase dispersed into the matrix with R3c symmetry and evolution of the domain. The ferroelectric domain wall was observed according to the displacement of Fe 3+ ions respect to Bi 3+ sub-lattice in the ferroelectric R 3 c phase based on HRTEM observations. The space group Pnam of the superstructure was identified by combining SAED and CBED techniques. EDS measurement revealed that the concentration of Nd in the Pnam phase is higher than that in R 3 c phase. This might mean that the transition from R 3 c to Pnam structure is due to the inhomogeneous distribution of the Nd concentration and the weakened stereochemical activity of Bi 3+ lone electron pair, arisen from the increase in Nd content. [ABSTRACT FROM AUTHOR]

Abstract: A series of TiO2 photoanodes with differing amounts of Ag nanoparticles (NPs) on TiO2 in core-shell form (Ag@TiO2) are prepared and used to make a series of dye-sensitized solar cells (DSSCs). The influence of different amounts of Ag–NPs on the structure and performance of the DSSCs is investigated. Studies indicate that the short-circuit current density (Jsc), open-circuit voltage (Voc), charge lifetime and dark current of DSSCs containing Ag–NPs are significantly improved. The best performance is achieved in the DSSCs with 0.15 wt% Ag–NPs additions, with the maximum Jsc of 10.19 mA cm−2, highest Voc of 698 mV and best photoelectric conversion efficiency of 5.33%, significantly superior to that of the DSSCs with pure TiO2 photoanodes. The increase of Jsc is attributed to the enhanced dye light absorption in strength and spectral range due to the surface plasmon resonance of Ag–NPs in photoanode, while the increase of Voc may be related to the more negative level of the quasi-Fermi energy of Ag–TiO2 composite system resulting from the added Ag. [Copyright &y& Elsevier]

[Display omitted] • The single-orientation flexible La 0.7 Sr 0.3 MnO 3 thin film was prepared. • A reversible magnetoelectric coefficient of 50 Oe/V was obtained. • The tunability of the flexible structures was not damaged by deformation. The flexible La 0.7 Sr 0.3 MnO 3 (LSMO) film shows good mechanical stretchability and property stability under bending states, which makes it a candidate material for flexible electronics and spintronics devices. Here the microwave magnetism of flexible LSMO thin film has been manipulated effectively by the ionic gel (IG) gating process. A reversible and non-volatile magnetoelectric (ME) coefficient of 50 Oe/V was observed using electron paramagnetic resonance (ESR) technology at the flat multilayer structure. This ME coupling is caused by the electrons hopping between Mn3+ and Mn4+ ions under the interfacial electric double layer. When the membranes were bent to a radius of curvature of 15 mm, a larger ME coefficient of 67 Oe/V was also observed, which indicating that this flexible structure can work effectively under mechanical deformation. This work demonstrates the voltage control of magnetism for flexible correlated materials and paves a way towards wearable low-power devices based on flexible manganite films. [ABSTRACT FROM AUTHOR]

Abstract: Ba-doped BiFeO3 thin films were prepared on Pt/TiO2/SiO2/Si (100) substrate at various oxygen pressures by pulsed laser deposition. The influences of oxygen pressure on the crystalline structures, magnetic and electrical properties of these films were studied. Studies showed that the oxygen vacancy content and accordingly the leakage current density of the films decreased with the increase of the oxygen pressure, and the concentration of the Fe2+ increased with the decrease of the oxygen pressure. Strong ferromagnetism was observed in these films. The magnetization of the films increased with the decrease of the oxygen pressure and the largest remnant magnetization of 2.46×104 A/m was obtained at an oxygen pressure of 0.7Pa. This enhancement of the magnetization can be attributed to the increase of the Fe2+ concentration which may be related closely to the increase of the oxygen vacancy in the films. [Copyright &y& Elsevier]

For the application of high-frequency current detection in power systems, such as very fast transient current, lightning current, partial discharge pulse current, etc., current sensors with a quick response are indispensable. Here, we propose a high-frequency magnetoelectric current sensor, which consists of a PZT piezoelectric ceramic and Metglas amorphous alloy. The proposed sensor is designed to work under d 15 thickness-shear mode, with the resonant frequency around 1.029 MHz. Furthermore, the proposed sensor is fabricated as a high-frequency magnetoelectric current sensor. A comparative experiment is carried out between the tunnel magnetoresistance sensor and the magnetoelectric sensor, in the aspect of high-frequency current detection up to 3 MHz. Our experimental results demonstrate that the d 15 thickness-shear mode magnetoelectric sensor has great potential for high-frequency current detection in smart grids.

Flexible quantum spin electronic devices based on ferromagnetic insulators have attracted wide attention due to their outstanding advantages of low-power dissipation and noncontact sensing. However, ferromagnetic insulators, such as monocrystalline yttrium iron garnet (Y 3 Fe 5 O 12 , YIG), hve weak stress effects with a small magnetostrictive coefficient (λ 110 , 10 ppm), making it difficult to achieve a large magnetic tunable amplitude. In this paper, large-scale (with a diameter of 40 mm), flexible Pt/YIG heterojunctions were obtained by double-cavity magnetron sputtering technology, indicating typical soft magnetism and good bending fatigue characteristics. Here, the 3 nm thickness of the Pt layer triggers an obvious magnetic proximity effect, in which the in-plane ferromagnetic resonance field is decreased by 70 Oe compared to flexible Cu/YIG heterojunctions. Meanwhile, it shows a wide tunable amplitude of 110 Oe under the flexible bending stresses, which is induced by the sensitive interface effect of Pt (3 nm)/YIG heterojunctions. The saturation magnetization of Pt/YIG heterojunctions is negatively correlated with Pt thickness rather than the relative stability of Cu/YIG heterojunctions, depending on the magnetic proximity effect. It brings greater application possibilities for flexible stress-sensitive magnetic oxides in spin logic electronic devices.

The scalable and low-cost room temperature (RT) synthesis for pure-iodine all-inorganic perovskite colloidal quantum dots (QDs) is a challenge due to the phase transition induced by thermal unequilibrium. Here, we introduce a direct RT strongly confined spontaneous crystallization strategy in a Cs-deficient reaction system without polar solvents for synthesizing stable pure-iodine all-inorganic tin-lead (Sn-Pb) alloyed perovskite colloidal QDs, which exhibit bright yellow luminescence. By tuning the ratio of Cs/Pb precursors, the size confinement effect and optical band gap of the resultant CsSn x Pb 1-x I 3 perovskite QDs can be well controlled. This strongly confined RT approach is universal for wider bandgap bromine- and chlorine-based all-inorganic and iodine-based hybrid perovskite QDs. The alloyed CsSn 0.09 Pb 0.91 I 3 QDs show superior yellow emission properties with prolonged carrier lifetime and significantly increased colloidal stability compared to the pristine CsPbI 3 QDs, which is enabled by strong size confinement, Sn 2+ passivation and enhanced formation energy. These findings provide a RT size-stabilized synthesis pathway to achieve high-performance pure-iodine all-inorganic Sn-Pb mixed perovskite colloidal QDs for optoelectronic applications., (© 2024. The Author(s).)

Control of magnetic anisotropy in thin films with perpendicular magnetic anisotropy is of paramount importance for the development of spintronics with ultralow-energy consumption and high density. Traditional magnetoelectric heterostructures utilized the synergistic effect of piezoelectricity and magnetostriction to realize the electric field control of magnetic anisotropy, resulting in additional fabrication and modulation processes and a complicated device architecture. Here, we have systematically investigated the electric current tuning of the magnetic properties of the metallic NiCo 2 O 4 film with intrinsic perpendicular magnetic anisotropy. Ferrimagnetic-to-paramagnetic phase transition has been induced through Joule heating, resulting in a rapid decrease of both magnetic coercivity and moment. An ultralow current density of 2.5 × 10 4 A/cm 2 , which is 2 to 3 orders magnitude lower than that of conventional spin transfer torque devices, has been verified to be effective for the control of the magnetic anisotropy of NiCo 2 O 4 . Successful triggering of magnetic switching has been realized through the application of a current pulse. These findings provide new perspectives toward the electric control of magnetic anisotropy and design of spintronics with an ultralow driving current density.

Heat-assisted magnetic anisotropy engineering has been successfully used in selective magnetic writing and microwave amplification due to a large interfacial thermal resistance between the MgO barrier and the adjacent ferromagnetic layers. However, in spin-orbit torque devices, the writing current does not flow through the tunnel barrier, resulting in a negligible heating effect due to efficient heat dissipation. Here, we report a dramatically reduced switching current density of ∼2.59 MA/cm 2 in flexible spin-orbit torque heterostructures, indicating a 98% decrease in writing energy consumption compared with that on a silicon substrate. The reduced driving current density is enabled by the dramatically decreased magnetic anisotropy due to Joule dissipation and the lower thermal conductivity of the flexible substrate. The large magnetic anisotropy could be fully recovered after the impulse, indicating retained high stability. These results pave the way for flexible spintronics with the otherwise incompatible advantages of low power consumption and high stability.

The electron-phonon interaction is known as one of the major mechanisms determining electrical and thermal properties. In particular, it alters the carrier transport behaviors and sets fundamental limits to carrier mobility. Establishing how electrons interact with phonons and the resulting impact on the carrier transport property is significant for the development of high-efficiency electronic devices. Here, carrier transport behavior mediated by the electron-phonon coupling in BiFeO 3 epitaxial thin films is directly observed. Acoustic phonons are generated by the inverse piezoelectric effect and coupled with photocarriers. Via the electron-phonon coupling, doughnut shape carrier distribution has been observed due to the coupling between hot carriers and phonons. The hot carrier quasi-ballistic transport length can reach 340 nm within 1 ps. The results suggest an effective approach to investigating the effects of electron-phonon interactions with temporal and spatial resolutions, which is of great importance for designing and improving electronic devices., (© 2023 The Authors. Advanced Science published by Wiley-VCH GmbH.)

Nano-FeS has great potential for use in the management of radioactive contaminants. In this paper, we prepared a FeS@ Stenotrophomonas sp. composite material by ultrasonic chemistry, and it showed excellent removal of uranium and thorium from the solution. Through optimization of the experimental conditions, it was found that the maximum adsorption capacities for uranium and thorium reached 481.9 and 407.5 mg/g for a composite made with a synthetic ratio of 1:1, pH 5 and 3.5, respectively, for U and Th, and sonication for 20 min. Compared with those of FeS or Stenotrophomonas alone, the removal capacity was greatly improved. The results of a mechanistic study indicated that efficient removal of the uranium and thorium was due to ion exchange, reduction, and microbial surface adsorption. FeS@ Stenotrophomonas sp. could be applied to U(VI) and Th(IV) extraction for radioactive water.

Uranium is well-known to have serious adverse effects on the ecological environment and human health. Bioremediation stands out among many remediation methods owing to its being economically feasible and environmentally friendly. This study reported a great promising strategy for eliminating uranium by Stenotrophomonas sp. CICC 23833 in the aquatic environment. The bacterium demonstrated excellent uranium adsorption capacity (q max  = 392.9 mg/g) because of the synergistic effect of surface adsorption and intracellular accumulation. Further analysis revealed that hydroxyl, carboxyl, phosphate groups and proteins of microorganisms were essential in uranium adsorption. Intracellular accumulation was closely related to cellular activity, and the efficiency of uranium processing by the permeabilized bacterial cells was significantly improved. In response to uranium stress, the bacterium was found to release multiple ions in conjunction with uranium adsorption, which facilitates the maintenance of bacterial life activities and the conversion of uranyl to precipitates. These above results indicated that Stenotrophomonas sp. Had great potential application value for the remediation of uranium., Competing Interests: Declaration of competing interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper., (Copyright © 2023 Elsevier Inc. All rights reserved.)

Realization of novel topological phases in magnonic band structures represents a new opportunity for the development of spintronics and magnonics with low power consumption. In this work, we show that in antiparallelly aligned magnetic multilayers, the long-range, chiral dipolar interaction between propagating magnons generates bulk bands with nonzero Chern integers and magnonic surface states carrying chiral spin currents. The surface states are highly localized and can be easily toggled between nontrivial and trivial phases through an external magnetic field. The realization of chiral surface spin currents in this dipolarly coupled heterostructure represents a magnonic implementation of the coupled wire model that has been extensively explored in electronic systems. Our work presents an easy-to-implement system for realizing topological magnonic surface states and low-dissipation spin current transport in a tunable manner.

Oxide nanosprings have attracted many research interests because of their anticorrosion, high-temperature tolerance, oxidation resistance, and enhanced-mechanic-response from unique helix structures, enabling various applications like nanomanipulators, nanomotors, nanoswitches, sensors, and energy harvesters. However, preparing oxide nanosprings is a challenge for their intrinsic lack of elasticity. Here, an approach for preparing self-assembled, epitaxial, ferroelectric nanosprings with built-in strain due to the lattice mismatch in freestanding La 0.7 Sr 0.3 MnO 3 /BaTiO 3 (LSMO/BTO) bilayer heterostructures is developed. It is found that these LSMO/BTO nanosprings can be extensively pulled or pushed up to their geometrical limits back and forth without breaking, exhibiting super-scalability with full recovery capability. The phase-field simulations reveal that the excellent scalability originates from the continuous ferroelastic domain structures, resulting from twisting under co-existing axial and shear strains. In addition, the oxide heterostructural springs exhibit strong resilience due to the limited plastic deformation nature and the built-in strain between the bilayers. This discovery provides an alternative way for preparing and operating functional oxide nanosprings that can be applied to various technologies., (© 2022 Wiley-VCH GmbH.)

Magnetoelectric coupling properties are limited to the substrate clamping effect in traditional ferroelectric/ferromagnetic heterostructures. Here, Fe 3 O 4 /BaTiO 3 nanopillar composites are successfully constructed. The well-ordered BaTiO 3 nanopillar arrays are prepared through template-assisted pulsed laser deposition. The Fe 3 O 4 layer is coated on BaTiO 3 nanopillar arrays by atomic layer deposition. The nanopillar arrays and heterostructure are confirmed by scanning electron microscopy and transmission electron microscopy. A large thermally driven magnetoelectric coupling coefficient of 395 Oe °C -1 near the phase transition of BaTiO 3 (orthorhombic to rhombohedral) is obtained, indicating a strong strain-induced magnetoelectric coupling effect. The enhanced magnetoelectric coupling effect originated from the reduced substrate clamping effect and increased the interface area in nanopillar structures. This work opens a door toward cutting-edge potential applications in spintronic devices.

Self-assembled membranes with periodic wrinkled patterns are the critical building blocks of various flexible electronics, where the wrinkles are usually designed and fabricated to provide distinct functionalities. These membranes are typically metallic and organic materials with good ductility that are tolerant of complex deformation. However, the preparation of oxide membranes, especially those with intricate wrinkle patterns, is challenging due to their inherently strong covalent or ionic bonding, which usually leads to material crazing and brittle fracture. Here, wrinkle-patterned BaTiO 3 (BTO)/poly(dimethylsiloxane) membranes with finely controlled parallel, zigzag, and mosaic patterns are prepared. The BTO layers show excellent flexibility and can form well-ordered and periodic wrinkles under compressive in-plane stress. Enhanced piezoelectricity is observed at the sites of peaks and valleys of the wrinkles where the largest strain gradient is generated. Atomistic simulations further reveal that the excellent elasticity and the correlated coupling between polarization and strain/strain gradient are strongly associated with ferroelectric domain switching and continuous dipole rotation. The out-of-plane polarization is primarily generated at compressive regions, while the in-plane polarization dominates at the tensile regions. The wrinkled ferroelectric oxides with differently strained regions and correlated polarization distributions would pave a way toward novel flexible electronics., (© 2020 Wiley-VCH GmbH.)

Controlling magnetization dynamics is imperative for developing ultrafast spintronics and tunable microwave devices. However, the previous research has demonstrated limited electric-field modulation of the effective magnetic damping, a parameter that governs the magnetization dynamics. Here, we propose an approach to manipulate the damping by using the large damping enhancement induced by the two-magnon scattering and a nonlocal spin relaxation process in which spin currents are resonantly transported from antiferromagnetic domains to ferromagnetic matrix in a mixed-phased metallic alloy FeRh. This damping enhancement in FeRh is sensitive to its fraction of antiferromagnetic and ferromagnetic phases, which can be dynamically tuned by electric fields through a strain-mediated magnetoelectric coupling. In a heterostructure of FeRh and piezoelectric PMN-PT, we demonstrated a more than 120% modulation of the effective damping by electric fields during the antiferromagnetic-to-ferromagnetic phase transition. Our results demonstrate an efficient approach to controlling the magnetization dynamics, thus enabling low-power tunable electronics., (Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).)

A single device with extensive new functionality is highly attractive for the increasing demands for complex and multifunctional optoelectronics. Multi-field coupling has been drawing considerable attention because it leads to materials that can be simultaneously operated under several external stimuli ( e.g. magnetic field, electric field, electric current, light, strain, etc. ), which allows each unit to store multiple bits of information and thus enhance the memory density. In this work, we report an electro-opto-mechano-driven reversible multi-state memory device based on photocurrent in Bi 0.9 Eu 0.1 FeO 3 (BEFO)/La 0.67 Sr 0.33 MnO 3 (LSMO)/0.7Pb(Mg 1/3 Nb 2/3 )O 3 -0.3PbTiO 3 (PMN-PT) heterostructures. It is found that the short-circuit current density ( J sc ) can be switched by the variation of the potential barrier height and depletion region width at the Pt/BEFO interface modulated by light illumination, external strain, and ferroelectric polarization reversal. This work opens up pathways toward the emergence of novel device design features with dynamic control for developing high-performance electric-optical-mechanism integrated devices based on the BiFeO 3 -based heterostructures., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)

Mechanical flexible electronic/spintronic devices have shown enormous application potential to impact our daily life. Here, an in situ low-voltage-controlled flexible field-effect transistor structure was exploited, which consists of a support layer (mica), functional layer (Fe 3 O 4 ), and control layer (ionic gel). By applying a low voltage (1.5 V) on the ionic gel, the spin-dynamic properties of the function layer were manipulated and a reversible, nonvolatile 345 Oe ferromagnetic resonance field ( H r ) shift was achieved, which corresponds to a large magnetoelectric (ME) coefficient of 230 Oe/V. In addition, a reversible 126 Oe H r shift (84 Oe/V) was obtained when the layers were bent at curvature radius r = 15 mm. The ME tunability could be attributed to the E-field induced ionic transformation between Fe 2+ and Fe 3+ at the interface via electrostatic induction. This sandwich structure shows an excellent and effective ionic gel gating system and paves the way for low-voltage-tunable, nonvolatile, and flexible spintronic devices such as memory devices, sensors, and logical devices.

The trend of mobile Internet requires portable and wearable devices as bio-device interfaces. Electric field control of magnetism is a promising approach to achieve compact, light-weight, and energy-efficient wearable devices. Within a flexible sandwich heterostructure, perpendicular magnetic anisotropy switching was achieved via low-voltage gating control of an ionic gel in mica/Ta/(Pt/Co) x /Pt/ionic gel/Pt, where (Pt/Co) x acted as a functional layer. By conducting in situ VSM, EPR, and MOKE measurements, a 1098 Oe magnetic anisotropy field change was determined at the bending state with tensile strain, corresponding to a magnetic anisotropy energy change of 3.16 × 10 5 J/m 3 and a giant voltage tunability coefficient of 0.79 × 10 5 J/m 3 ·V. The low voltage and strain dual control of magnetism on mica substrates enables tunable flexible spintronic devices with an increased degree of manipulation.

Traditional magnetostrictive/piezoelectric laminated composites rely on the two-dimensional interface that transfers stress/strain to achieve the large magnetoelectric (ME) coupling, nevertheless, they suffer from the theoretical limitation of the strain effect and of the substrate clamping effect in real ME applications. In this work, 3D NZFO/BTO-pillar nanocomposite films were grown on SrTiO 3 by template-assisted pulsed laser deposition, where BaTiO 3 (BTO) nanopillars appeared in an array with distinct phase transitions as the cores were covered by NiZn ferrite (NZFO) layer. The perfect 3D heteroepitaxial interface between BTO and NZFO phases can be identified without any edge dislocations, which allows effective strain transfer at the 3D interface. The 3D structure nanocomposites enable the strong two magnon scattering (TMS) effect that enhances ME coupling at the interface and reduces the clamping effect by strain relaxation. Thereby, a large FMR field shift of 1866 Oe in NZFO/BTO-pillar nanocomposite was obtained at the TMS critical angle near the BTO nanopillars phase transition of 255 K.

To overcome the fundamental challenge of the weak natural response of antiferromagnetic materials under a magnetic field, voltage manipulation of antiferromagnetic interaction is developed to realize ultrafast, high-density, and power efficient antiferromagnetic spintronics. Here, we report a low voltage modulation of Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction via ionic liquid gating in synthetic antiferromagnetic multilayers of FeCoB/Ru/FeCoB and (Pt/Co) 2 /Ru/(Co/Pt) 2 . At room temperature, the distinct voltage control of transition between antiferromagnetic and ferromagnetic ordering is realized and up to 80% of perpendicular magnetic moments manage to switch with a small-applied voltage bias of 2.5 V. We related this ionic liquid gating-induced RKKY interaction modification to the disturbance of itinerant electrons inside synthetic antiferromagnetic heterostructure and the corresponding change of its Fermi level. Voltage tuning of RKKY interaction may enable the next generation of switchable spintronics between antiferromagnetic and ferromagnetic modes with both fundamental and practical perspectives.

Yttrium iron garnet (YIG) is of great importance in RF/microwave devices for its low loss, low intrinsic damping, and high permeability. Nevertheless, tuning of YIG-based multiferroics is still a challenge due to its near-zero magnetostriction and the difficulty of building epitaxial interface between ferromagnetic garnet and ferroelectric perovskite phases. In this work, the vertically aligned heterostructure of YIG:BTO/STO(001) with local epitaxial interface between BTO and YIG is well-constructed, where the single crystal BTO pillars are embedded in YIG matrix. A large magnetoelectric coupling effect that drives YIG's FMR shift up to 512 and 333 Oe (1-2 order greater than those of all state-of-the-art progresses) is obtained through BTO ferroelectric phase changes induced by temperature variation at 295 and 193 K, correspondingly. This record high magnetoelectric tunability of YIG paves a way toward thermal/electrical tunable YIG devices.