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322 results on '"Iida, Daisuke"'

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301. Ten-Gram-Scale Total Synthesis of the Anticancer Drug Candidate E7130 to Supply Clinical Trials.

302. Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs.

303. Simultaneous Growth Strategy of High-Optical-Efficiency GaN NWs on a Wide Range of Substrates by Pulsed Laser Deposition.

304. Investigation of N-polar InGaN growth on misoriented ScAlMgO 4 substrates.

305. The efficacy of right ventricular pacing for symptomatic left mid-ventricular obstruction.

306. Efficacy and safety of pararectus approach for the treatment of acetabular fractures: A systematic review and meta-analysis.

307. Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes.

308. Broad-bandwidth and accurate optical vibration sensing by using FDM Φ-OTDR with linear regression analysis of multi-frequency phase responses.

309. Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.

310. Structural and optical analyses for InGaN-based red micro-LED.

311. Improvement of optical properties of InGaN-based red multiple quantum wells.

312. Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid.

313. Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN.

314. Photoluminescence of InGaN-based red multiple quantum wells.

315. Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays.

317. Investigation of InGaN-based red/green micro-light-emitting diodes.

318. Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes.

319. Loss measurement of each mode in few-mode fiber links with crosstalk-inducing points based on optical time domain reflectometry.

320. Photoelectrochemical and crystalline properties of a GaN photoelectrode loaded with α-Fe 2 O 3 as cocatalyst.

321. Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes.

322. Simultaneous mode-by-mode impulse response measurement of multi-mode optical systems based on linear optical sampling.

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