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Purpose: This paper aims to analyze the effect of surface roughness and hardness of leadframe on the bondability of gold (Au) wedge bond using in situ inspection of laser interferometer and its relationship with the deformation and wire pull strength. Design/methodology/approach: The in situ inspection of ultrasonic vibration waveform through the changes of vertical axis (y-axis) amplitude of wire bonder capillary was carried out using laser interferometer to analyze the formation of Au wedge bond. The relationship between the changes of ultrasonic waveform of capillary with the deformation and the pull strength was analyzed to evaluate the bondability of Au wedge bonds. Findings: It was observed that the changes in vertical axis amplitude of ultrasonic vibration waveform of wire bonder capillary can be used to describe the process of bonding formation. The loss of ultrasonic energy was exhibited in ultrasonic vibration waveform of wire bonding on leadframe that has higher value of roughness (leadframe A) as compared to that of leadframe that has lower value of roughness (leadframe B). The lower pull strength obtained by Au wedge bond further confirms the reduction of bond formation because of the higher deformation on leadframe A as compared to that of leadframe B. Originality/value: The relationship between in situ measurement using laser interferometer with the bondability or deformation and wire pull strength of Au wedge bonds on different surface roughness and hardness of leadframes is still lacking. These findings provide a valuable data in analyzing the bonding mechanisms that can be identified based on the in situ measurement of ultrasonic vibration and the bondability of Au wedge bonds. [ABSTRACT FROM AUTHOR]

This study investigated the effectiveness of heat shield placement locations during the rework process to avoid thermal and mechanical damage to adjacent ball grid array components and their solder joints on double-sided printed circuit board assembly. Three types of heat shield placement locations were used: sample X, individual heat shield placement on adjacent components of the rework location; sample Y, a U-shaped, and sample Z, a square-shaped heat shield placed respectively at the heat source location. The dye and pull test results, infrared thermography, and temperature measurements were analysed to understand the relationship between the location of the heat shield and solder joint damage during rework. Heat shield placement at the heat source location on the reworked component can reduce the peak temperatures on the adjacent rework component locations by up to 8.18%. The peak temperatures of the centre and corner of the BGA component can be maintained below 195 °C and 210 °C, respectively to improve the adjacent rework component locations' solder joint quality by reducing solder joint damage by more than 50% solder cracks. This is useful for thermal management during rework involving high-density ball grid array component placements on double-sided printed circuit board assembly. [ABSTRACT FROM AUTHOR]

An accelerated reliability testing via thermal cycling test (TCT) was used to test ball grid array (BGA) components’ reliability. Five variables were observed; control sample J and samples K, L, M, and N were BGA component samples that have been exposed to TCT between 500 and 1250 cycles with the TCT profile in the range of 0 °C–100 °C. The crack orientation of the individual solder joint was analyzed along with the propagation path pattern on the solder array of the BGA component pad by analyzing the dye and pull test results that were then mapped and analyzed using the cardinal and ordinal directions approach. This is to determine the crack propagation path direction in the solder array and track the potential of warpage on the BGA package as the TCT cycles progressed. A cross section was performed on sample M with the 3-D X-ray and scanning electron microscopy (SEM) analysis to observe the solder joints’ fracture lines and surface topographies. The results showed that individual solder joint crack orientation is correlated to the crack propagation location on the BGA package. The solder joint from northwest (NW), northeast (NE), southeast (SE), and southwest (SW) of the BGA package is prone to solder crack compared to the solder joint array in the middle. A solder grain structure coarsening occurred at the crack propagation due to the high cyclic strain from the TCT. [ABSTRACT FROM AUTHOR]

Abstract: The effect of gamma radiation on the mechanical and structural properties of gold ball bonds was investigated. Gold wires from thermosonic wire bonding were exposed to gamma rays from a Cobalt-60 source at a low dose (5Gy). The load–depth curve of nanoindentation for the irradiated gold wire bond has an apparent staircase shape during loading compared to the as-received sample. The hardness of the specimens calculated from the nanoindentation shows an increase in value from 0.91 to 1.09GPa for specimens after exposure. The reduced elastic modulus for irradiated specimens significantly increased as well, with values from 75.18 to 98.55GPa. The change in intrinsic properties due to gamma radiation was investigated using dual-focused ion beam and high-resolution transmission electron microscope analysis. The dual-focused ion beam and high-resolution transmission electron microscope images confirmed the changes in grain structure and the presence of dislocations. The scanning electron microscope micrographs of focused ion beam cross sections showed that the grain structure of the gold became elongated and smaller after exposure to gamma rays. Meanwhile, high-resolution transmission electron microscopy provided evidence that gamma radiation induced dislocation of the atomic arrangement. [Copyright &y& Elsevier]

Abstract: This paper characterizes die damage resulting from various wafer thinning processes. Die fracture strength is measured using ball breaker test with respect to die surface finish. Further study on surface roughness and topography of each surface finish is obtained by atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. Stress relief process with 25μm removal is able to strengthen 100μm wafer by 20.4% using chemical wet etch and 75μm wafer by 36.4% with plasma etch. Relatively, plasma etching shows higher fracture strength and flexibility compared to chemical wet etch. This is due to topography of the finished surface of plasma etch is smoother and rounded, leading to a reduced stress concentration, hence improved fracture strength. [Copyright &y& Elsevier]

Abstract: This paper discusses on the surface characteristics of each of the seven set-up process steps prior completion of under bump metallurgy (UBM) deposition. The Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) techniques were used to obtain the surface roughness and morphology of each deposition process. The elemental analysis using Energy Disperse X-Ray (EDX) and precision micro-cross-section using Focus Ion Beam (FIB) was also used in this study. The first zincation process has high surface roughness but preserved surface morphology of initial thin-film surface. The second zincation provides the improved surface roughness due to the replacement aluminum layer with ion zinc in the solution. Smooth surfaces leads to better shear strength. However, second zincation will affect the Al thickness, hence excessive attacks on Al layer may cause reliability problem. [Copyright &y& Elsevier]

• A method of removing CIGS layers up until MoSe 2 of TFPV using mechanical brushing and scribing was found to be plausible method before ultrasonic bonding application. • Ultrasonic Al bond on Mo back contact layer has higher bondability as compared to that of ultrasonic Al bond on MoSe 2 in terms of electrical (contact resistance) and mechanical (peel strength) performances. • The creation of micro weld between ultrasonic Al bonds with Mo can be identified through the identification of failure modes from load-distance profile of peel test. • Rigidity and stress distribution experienced during lamination process determine the panel construction CIGS TFPV selection. This paper aims to study the bondability of ultrasonic Aluminum, Al bonds on Mo and MoSe 2 layers of back-contact metal of copper indium gallium (de)selenide (CIGS) thin film photovoltaic (TFPV) solar panel. The bondability of ultrasonic Al bonds were evaluated based on the contact resistance, R c , peel strength and electrical characteristics measured using transmission line method (TLM), peel test, and current–voltage (I-V) measurement, respectively. Besides, the qualitative results of load-distance profiles from tensile test also have been used to evaluate the bondability of the ultrasonic Al bonds. Two type of lamination constructions namely construction 1 and construction 2 were built on the CIGS TPFV solar panel with ultrasonic Al bonds on Mo and MoSe 2. It was noted that the new method of removing CIGS layer up until MoSe 2 is the plausible technique to be used. Ultrasonic Al bond on Mo layer has higher bondability as compared to that of ultrasonic Al bond on MoSe 2 through the quantitative results of R c , peel strength and qualitative result of load-distance profile. CIGS TFPV solar panel with construction 2 is the suitable construction for the CIGS TFPV solar panel due to the higher rigidity, and even stress distribution experienced during lamination process as compared to that of construction 1. It is noted that steps taken from ultrasonic bonding until lamination process has increased the cumulative contact area and decreased the R c and consequently increased the efficiency of CIGS TFPV solar panel with ultrasonic Al bond on MoSe 2 layer. [ABSTRACT FROM AUTHOR]

Purpose The purpose of this paper is to analyse the operation of p-type side gate junctionless silicon transistor (SGJLT) in accumulation region through experimental measurements and 3-D TCAD simulation results. The variation of electric field components, carrier’s concentration and valence band edge energy towards the accumulation region is explored with the aim of finding the origin of SGJLT performance in the accumulation operational condition.Design/methodology/approach The device is fabricated by atomic force microscopy nanolithography on silicon-on-insulator wafer. The output and transfer characteristics of the device are obtained using 3-D Technology Computer Aided Design (TCAD) Sentaurus software and compared with experimental measurement results. The advantages of AFM nanolithography in contact mode and Silicon on Insulator (SOI) technology were implemented to fabricate a simple structure which exhibits the behaviour of field effect transistors. The device has 200-nm channel length, 100-nm gate gap and 4 μm for the distance between the source and drain contacts. The characteristics of the fabricated device were measured using an Agilent HP4156C semiconductor parameter analyzer (SPA). A 3-D TCAD Sentaurus tool is used as the simulation platform. The Boltzmann statistics is adopted because of the low doping concentration of the channel. Hydrodynamic model is taken to be as the main transport model for all simulations, and the quantum mechanical effects are ignored. A doping dependent Masetti mobility model was also included as well as an electric field dependent model with Shockley–Read–Hall (SRH) carrier recombination/generation.Findings We have obtained that the device is a normally on state device mainly because of the lack of work functional difference between the gate and the channel. Analysis of electric field components’ variation, carrier’s concentration and valence band edge energy reveals that increasing the negative gate voltage drives the device into accumulation region; however, it is unable to increase the drain current significantly. The positive slope of the hole quasi-Fermi level in the accumulation region presents mechanism of carriers’ movement from source to drain. The influence of electric field because of drain and gate voltage on charge distribution explains a low increasing of the drain current when the device operates in accumulation regime.Originality/value The proposed side gate junctionless transistors simplify the fabrication process, because of the lack of gate oxide and physical junctions, and implement the atomic force microscopy nanolithography for fabrication process. The optimized structure with lower gap between gate and channel and narrower channel would present the output characteristics near the ideal transistors for next generation of scaled-down devices in both accumulation and depletion region. The presented findings are verified through experimental measurements and simulation results. [ABSTRACT FROM AUTHOR]

The structural changes of radiolytically prepared aluminium-copper (Al-Cu) bimetallic nanoparticles by adjusting the precursors' mole ratio and gamma radiation dose were investigated by transmission electron microscopy, field emission scanning electron microscopy/energy dispersive spectroscopy, X-ray diffraction, Fourier transform infrared spectroscopy (FTIR), and X-band continuous wave electron paramagnetic resonance (EPR). The EPR spectrum was also analysed through the simulation of the powder-like EPR spectra. The results note that in prepared samples with higher Al contents, formation of core-shell structure is dominant, whereas in Cu-rich samples, the final structures are primarily in alloy and oxide forms. According to the analysis of data obtained from X-ray diffraction, FTIR, and EPR, we found that the unpaired electron of the Cu ion in various phases play the main role in structural phase transformation of Al-Cu nanoparticles. Additionally, based on the information extracted from simulated EPR peaks of Cu-Cu, the diameter of the Cu core in core-shell structures was obtained. We showed that by increasing the gamma radiation dose from 80 to 120 kGy, the overall size of nanoparticles decreases from 9.47 to 3.75 nm, but the contribution of copper core increases from 11 to 22 % of overall particle size. [ABSTRACT FROM AUTHOR]

Abstract: This paper describes the behaviour of bioactive wollastonite materials containing Malaysian limestone and silica sand. Wollastonite, which is also known as calcium silicate (CaSiO3), is an industrial mineral composed of calcium, silicon and oxygen. Pseudowollastonite, which is a primary crystal of wollastonite, was synthesised via a solid-state reaction at a temperature of 1450°C. The in-vitro bioactivity of wollastonite was examined by soaking it in simulated body fluid (SBF) solution for 1–7 days at 36.5°C. The soaked wollastonite samples were characterised using XRD, SEM-EDX, FTIR and ICP analyses. Apatite particles precipitated on the surface of the wollastonite sample after the sample was soaked in the SBF. The XRD analysis indicated the presence of an increasing amount of the hydroxyapatite phase as the soaking time increased. The SEM and EDX analyses indicated the formation of granules of agglomerated apatite particles on the surface of the soaked wollastonite sample. During the formation of apatite, phosphate ions from the SBF solution were consumed. This process was confirmed by ICP, which revealed a decrease in ion concentration after the soaking process. The FTIR analysis indicated that the peaks of the phosphate ions increase when the apatite layer forms on the surface of the wollastonite sample. After the soaking process, a calcium deficient hydroxyapatite layer was observed on the wollastonite sample. The study concludes that wollastonite produced from Malaysian limestone and silica sand is bioactive and may be used as an implantable biomaterial. [Copyright &y& Elsevier]

Abstract: ZnO thin films have been successfully synthesized by thermal evaporation of pure zinc at 900°C under the flow of different percentages of argon and oxygen gases. The films were characterized by X-ray diffraction (XRD), variable pressure scanning electron microscopy (VPSEM), energy dispersive X-ray spectroscopy (EDS) and UV–vis spectroscopy. The aim of this paper is to study the influence of the oxygen percentage on the structural and morphological properties of the ZnO films. VPSEM results show that very thick needle structures were produced at high oxygen percentages. EDS results revealed that only Zn and O are present in the sample, indicating a composition of pure ZnO. XRD results showed that the ZnO synthesized under different quantities of oxygen were crystalline with the hexagonal wurtzite structure. UV–vis spectroscopy results indicated that the optical band gap energies from the transmission spectrum are between 3.62 and 3.69eV for ZnO thin films. [Copyright &y& Elsevier]