301. Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors
- Author
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Mamatrishat, M., Kubota, T., Seki, T., Kakushima, K., Ahmet, P., Tsutsui, K., Kataoka, Y., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., and Iwai, H.
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INTERFACES (Physical sciences) , *OXIDES , *ELECTRON distribution , *LANTHANUM compounds , *SPECTRUM analysis , *TEMPERATURE effect , *ANNEALING of semiconductors - Abstract
Abstract: A novel interpretation for conductance spectra obtained by conductance method of La2O3 gated MOS capacitors has been proposed. Two distinct peaks, one with broad spectrum ranging from 10k to 200kHz and the other near 1kHz with a single time constant spectrum, have been observed at depletion condition. The former spectrum can be assigned as the interface traps (Dit ) located at the interface between La-silicate and the Si substrate by statistical surface potential fluctuation model. On the other hand, as the latter slow trap signal shows strong influence with the thickness of La-silicate layer, it can be assigned as the trappings (Dslow ) at the interface between La2O3 and La-silicate. Finally, the Dit and Dslow trends on annealing temperature are summarized. [Copyright &y& Elsevier]
- Published
- 2012
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