1. Exceptionally high-temperature in-air stability of transparent conductive oxide tantalum-doped tin dioxide
- Author
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(0000-0003-3408-3572) Krause, M., Hoppe, M., Romero-Muñiz, C., Mendez, A., (0000-0003-2506-6869) Munnik, F., (0000-0002-5238-6465) Garcia Valenzuela, A., Schimpf, C., Rafaja, D., Escobar-Galindo, R., (0000-0003-3408-3572) Krause, M., Hoppe, M., Romero-Muñiz, C., Mendez, A., (0000-0003-2506-6869) Munnik, F., (0000-0002-5238-6465) Garcia Valenzuela, A., Schimpf, C., Rafaja, D., and Escobar-Galindo, R.
- Abstract
The compositional, optical and structural stability of transparent conductive oxide SnO2:Ta (1.25 at.% Ta) thin films at 650 °C and 800 °C in air was studied under isothermal conditions. After the high-temperature treatment, the element composition and the optical spectra of the material were unchanged. The X-ray diffraction confirmed the conservation of a single rutile-type phase. Two strong Raman lines located out of the SnO2 phonon range indicated point defects in the material, which were identified as Sn vacancies and O interstitials by theoretical calculations. These point defects were partially healed out during the high-temperature treatment, without affecting the transmittance and reflectance of the material. Our study demonstrates an exceptional high in-air stability of Ta-doped SnO2 and encourages it for applications in fields, where transparent conductive oxides with high-temperature and oxidation stability are required. These are, e.g., selective transmitters for concentrated solar power or electrodes for dye-sensitized solar cells and dynamic random-access memories.
- Published
- 2023