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Copper nanowires (Cu NWs) are popular potential building blocks of various interconnecting components, microscale circuits, and nanoelectronics. Making interconnects at the nanoscale is still an open problem, and various methods have been explored during the past decades. While ion beam joining has been known for quite some time, the beam parameter-dependent processes leading to joining is yet to be understood in detail. A low-energy (5 keV) and broad argon ion beam is unable to induce joining among the Cu NW mesh, at the low ion currents (<400 nA). However, when the ion current was elevated to 1 µA at the same energy, a large-scale joining was observed. We developed a 3D finite volume model for heat transfer and Joule heating-based melting, which successfully explains the ion current-induced joining. When the current is increased to a significantly high level, the network fragments into smaller copper nanoparticles due to the heat produced. On the other hand, at higher argon ion energy (200 keV) a large-scale joining is observed even at small (<400 nA) beam current. A state-of-the-art, Monte Carlo-based TRI3DYN simulation predicted the role of recoils, redeposition, and ion beam mixing in such joining process at high ion energy, which is mostly due to elastic collisional consequences. Such ion current-induced nanowelded copper mesh-coated PET substrate shows good transmission in the optical range of wavelengths and a notable decrease in the sheet resistance is observed.

The influence of a fuzzy surface on the physical sputtering of Mo in He plasmas has been studied with hyperspectral imaging (HSI) measurements and simulations that couple the TRI3DYN code with an impurity transport code. The 2D profiles of the Mo I line emission intensity from HSI images reveal that the sputtering yield, Y, is reduced to ∼40 % of the smooth-surface value due to the presence of a fuzz layer, while the angular distribution of the sputtered Mo atoms might not change significantly. The simulations reproduce the Y reduction successfully, but indicate that fuzz causes an increase in the small-angle distribution of sputtered atoms. However, the increase is too small to produce an observable change in the Mo I emission profiles. A simple analytical model that assumes a single collision mean free path for a fuzz layer and considers only the primary sputtering events qualitatively reproduces the Y reduction and the small-angle distribution enhancement, explaining the geometrical effect of fuzz on physical sputtering.

The focused ion beam (FIB) is a powerful tool for fabrication, modification, and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques, and applications. By viewing FIB developments through the lens of various research communities, we aim to identify future pathways for ion source and instrumentation development, as well as emerging applications and opportunities for improved understanding of the complex interplay of ion–solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interest and will support future fruitful interactions connecting tool development, experiment, and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout.

The focused ion beam (FIB) is a powerful tool for fabrication, modification, and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques, and applications. By viewing FIB developments through the lens of various research communities, we aim to identify future pathways for ion source and instrumentation development, as well as emerging applications and opportunities for improved understanding of the complex interplay of ion–solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interest and will support future fruitful interactions connecting tool development, experiment, and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout.

The focused ion beam (FIB) is a powerful tool for fabrication, modification, and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques, and applications. By viewing FIB developments through the lens of various research communities, we aim to identify future pathways for ion source and instrumentation development, as well as emerging applications and opportunities for improved understanding of the complex interplay of ion–solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interest and will support future fruitful interactions connecting tool development, experiment, and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout.

Broad ion beams have shown their wide applications for materials modification. Focused ion beams can be used in a similar way while simultaneously providing process monitoring. Here, we demonstrate this on a new kind of ion-induced structural evolution. Sub-micrometer Sn spheres were irradiated in a helium ion microscope with a sub-nm beam of 30 keV He ions. Above a fluence of ~10^17/cm², Sn extrusions appeared on the surface of the spheres, which were imaged using the secondary electron signal. Initially, small, pyramid-like faceted extrusions form at the equator of the spheres (north pole pointing to the ion source). Later, each sphere becomes completely covered by the extrusions. A model was developed that assumes that each He ion generate ~70 Frenkel pairs. The implanted helium atoms, interstitials, and vacancies will be confined by the oxide skin of the spheres. Some He atoms will occupy vacancies, which partially prevent their recombination with interstitials. Furthermore, the ion irradiation leads to erosion and opening of the SnO skin. The interstitials can now escape from the interior of the Sn sphere and form an epitaxial regular Sn lattice on the exterior. Transmission electron microscopy, Auger electron spectroscopy as well as TRI3DYN [1] and 3D kinetic lattice Monte Carlo [2] simulations support these findings. In addition, we provide a perspective on focused ion beams from our in-house development and production of liquid metal alloy ion sources, which can be used for applications from self-organized patterning, over altering magnetic or electrical properties, to quantum photonics and computation [3]. [1] Möller, Nucl. Instr. Meth. B 322 (2014) 23 [2] Strobel et al., Phys. Rev. B 64 (2001) 245422 [3] www.hzdr.de/fib

The focused ion beam (FIB) is a powerful tool for fabrication, modification, and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques, and applications. By viewing FIB developments through the lens of various research communities, we aim to identify future pathways for ion source and instrumentation development, as well as emerging applications and opportunities for improved understanding of the complex interplay of ion–solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interest and will support future fruitful interactions connecting tool development, experiment, and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout.

Focused ion beam (FIB) processing with low-energy ions has become a standard technique for the manipulation of nanostructures. Many underlying ion beam effects that deviate from conventional high-energy ion irradiation of bulk systems are considered today; however, ion channeling with its consequence of significant deeper penetration depth has been only theoretically investigated in this regime. We present here an experimental approach to determine the channeling of low-energy ions in crystalline nanoparticles by measuring the sputter yield derived from scanning electron microscopy (SEM) images taken after irradiation under various incident ion angles. Channeling maps of 30 and 20 keV Ga+ ions in Ag nanocubes have been identified and fit well with the theory. Indeed, channeling has a significant impact on the transport of energetic ions in crystals due to the large critical angle at low ion energies, thus being relevant for any FIB-application. Consequently, the obtained sputter yield clearly differs from amorphous materials; therefore, it is recommended not to rely only on, e.g., ion distribution depths predicted by standard Monte-Carlo (MC) algorithms for amorphous materials.

This study addresses the complementary metal-oxide-semiconductor-compatible fabrication of vertically stacked Si/SiO2/Si nanopillars (NPs) with embedded Si nanodots (NDs) as key functional elements of a quantum-dot-based, gate-all-around single-electron transistor (SET) operating at room temperature. The main geometrical parameters of the NPs and NDs were deduced from SET device simulations using the nextnano++ program package. The basic concept for single silicon ND formation within a confined oxide volume was deduced from Monte-Carlo simulations of ion-beam mixing and SiOx phase separation. A process flow was developed and experimentally implemented by combining bottom-up (Si ND self-assembly) and top-down (ion-beam mixing, electron-beam lithography, reactive ion etching) technologies, fully satisfying process requirements of future 3D device architectures. The theoretically predicted self-assembly of a single Si ND via phase separation within a confined SiOx disc of < 500 nm³ volume was experimentally validated. This work describes in detail the optimization of conditions required for NP/ND formation, such as the oxide thickness, energy and fluence of ion-beam mixing, thermal budget for phase separation and parameters of reactive ion beam etching. Low-temperature plasma oxidation was used to further reduce NP diameter and for gate oxide fabrication whilst preserving the pre-existing NDs. The influence of critical dimension variability on the SET functionality and options to reduce such deviations are discussed. We finally demonstrate the reliable formation of Si quantum dots with diameters of less than 3 nm in the oxide layer of a stacked Si/SiO2/Si NP of 10 nm diameter, with tunnelling distances of about 1 nm between the Si ND and the neighboured Si regions forming drain and source of the SET.

Ion irradiation can cause burrowing of nanoparticles in substrates, strongly depending on the material properties and irradiation parameters. In this study, it is demonstrated that the sinking process can be accomplished with ion irradiation of cube-shaped Ag nanoparticles on top of silicon; how ion channeling affects the sinking rate; and underline the importance of the amorphous state of the substrate upon ion irradiation. Based on these experimental findings, the sinking process is described as being driven by capillary forces enabled by ion-induced plastic flow of the substrate.

We present experimental and simulation data on the oblique angle scattering of heavy Sn ions at 14 keV energy from a Mo surface. The simulations are performed with the binary collision approximation codes TRIM, TRIDYN, TRI3DYN, SDTrimSP, and IMSIL. Additional simulations were performed in the molecular dynamics framework with LAMMPS. Our key finding is the absence of an expected peak in the experimental energy spectrum of backscattered Sn ions associated with the pure single collision regime. In sharp contrast to this, however, all simulation codes we applied do show a prominent single collision signature both in the energy spectrum and in the angular scatter pattern. We discuss the possible origin of this important discrepancy and show in the process, that widely used binary collision approximation codes may contain hidden parameters important to know and to understand.

Nanostructured tungsten oxide is a promising material for sensing reducing gases such as hydrogen. However, this material exhibits limitations due to a poor response toward sensing at room temperature, incomplete recovery to the initial state, long response time, and a low response factor, which is not desired for explosive gases like hydrogen. In this work, we, for the first time, demonstrate that these limitations can be significantly overcome using the core-shell structure of tungsten oxide (WO3) nanorods and hydrogen titanate (H2Ti3O7) nanotubes developed and suitably defect-engineered by low-energy ion irradiation. The sensor based on the pristine core-shell heterostructure of tungsten oxide nanorods and hydrogen titanate nanotubes exhibits excellent response and selectivity to different concentrations of H2 ranging from 10 to 500 ppm. However, it requires a quite high temperature of 300 °C with response and recovery times of about 38 and 99.8 s, respectively. After irradiation, the hybrid form shows a similar level of response and selectivity, however, at a much lower temperature of about 120 °C with significantly faster response and recovery times of about 16 and 18 s, respectively. Such an ion beam-modified structure addresses critical issues of developing a gas-sensing device, such as the effects of moisture and power consumption. The experimental observations are very well in agreement with the predictions of the state-of-the-art Monte Carlo-based TRI3DYN ion-solid interaction simulation, and the gas-sensing mechanism was explained using first principles-based calculation. The study reveals that low-energy ion-induced defect engineering yields better charge transport, better binding of the gas with the surface, as well as the superior moisture-repelling ability of the surface, leading to better sensing performance than the pristine core-shell structure. This heterostructure between two nanomaterials carries complementary advantages in various aspects, such

Recent developments of heterojunction-based devices through bottom-up approach such as sensors, light-emitters, energy generation and storage have emerged with great interest due to their wide range of operation and application related flexibilities. This work demonstrates how as-grown hydrogen titanate nanotubes (HTNT) bend and wrap on pristine curpous oxide nanowires (CONW) when mixed together. The unique architecture of wrapping followed by junction formation enhances the active surface area and reduces the contact resistance between the adjacent CONW and HTNT. Such a film upon further ion beam irradiation produces a large-scale network of hetero- and homo-junctions. This newly formed thin film surface upon irradiation shows strong water repelling properties and higher electrical conductivity. The wrapping mechanism, bond formation and the change of conductivity are explained using first principles calculations. The ion beam modifications and large-scale joining are predicted by state-of-the-art TRI3DYN simulation, which is based on binary collision approximation and simulated in a Monte Carlo approach. The observed wrapping and heterojunction are expected to provide excellent mechanical strength and flexibility, which are suitable for fabrication of flexible electronic devices.

Enhanced interstitial diffusion in tin is a phenomenon often observed during ion-beam irradiation and in lead-free solders. For the latter, this not very well understood, strain-driven mechanism results in the growth of whiskers, which can lead to unwanted shorts in electronic designs. In ion-beam physics, this phenomenon is often observed as a result of the enhanced formation of Frenkel pairs in the energetic collision cascade. Here, we show how epitaxial growth of tin extrusions on tin-oxide-covered tin spheres can be induced and simultaneously observed by implanting helium using a helium ion microscope. Calculations of collision cascades based on the binary collision approximation and 3D-lattice-kinetic Monte Carlo simulations show that the implanted helium will occupy vacancy sites, leading to a tin interstitial excess. Sputtering and phase separation of the tin oxide skin, which is impermeable for tin atoms, create holes and will allow the epitaxial overgrowth to start. Simultaneously, helium accumulates inside the irradiated spheres. Fitting the simulations to the experimentally observed morphology allows us to estimate the tin to tin-oxide interface energy to be 1.98 J m−2 . Our approach allows the targeted initiation and in situ observation of interstitial diffusion-driven effects to improve the understanding of the tin-whisker growth mechanism observed in lead-free solders.

Enhanced interstitial diffusion in tin is a phenomenon often observed during ion-beam irradiation and in lead-free solders. For the latter, this not very well understood, strain-driven mechanism results in the growth of whiskers, which can lead to unwanted shorts in electronic designs. In ion-beam physics, this phenomenon is often observed as a result of the enhanced formation of Frenkel pairs in the energetic collision cascade. Here, we show how epitaxial growth of tin extrusions on tin-oxide-covered tin spheres can be induced and simultaneously observed by implanting helium using a helium ion microscope. Calculations of collision cascades based on the binary collision approximation and 3D-lattice-kinetic Monte Carlo simulations show that the implanted helium will occupy vacancy sites, leading to a tin interstitial excess. Sputtering and phase separation of the tin oxide skin, which is impermeable for tin atoms, create holes and will allow the epitaxial overgrowth to start. Simultaneously, helium accumulates inside the irradiated spheres. Fitting the simulations to the experimentally observed morphology allows us to estimate the tin to tin-oxide interface energy to be 1.98 J m−2 . Our approach allows the targeted initiation and in situ observation of interstitial diffusion-driven effects to improve the understanding of the tin-whisker growth mechanism observed in lead-free solders.

Ion irradiation of bulk and thin film materials is tightly connected to well described effects such as sputtering or/and ion beam mixing. However, when a nanoparticle is ion irradiated and the ion range is comparable to the nanoparticle size, these effects are to be reconsidered essentially. This study investigates the morphology changes of silver nanoparticles on top of silicon substrates, being irradiated with Ga+ ions in an energy range from 1 to 30 keV. The hemispherical shaped nanoparticles become conical due to an enhanced and curvature-dependent sputtering, before they finally disappear. The sputter yield and morphology changes can be well described by 3D Monte Carlo TRI3DYN simulations. However, the combination of sputtering, ion beam mixing, ion beam induced diffusion, and Ostwald ripening at ion energies lower than 8 keV results in the reappearance of new particles. These newly formed nanoparticles appear in various structures depending on the material and ion energy

Broad ion beams have shown their wide applications for materials modification. Focused ion beams can be used in a similar way while simultaneously providing process monitoring. Here, we demonstrate this on a new kind of ion-induced structural evolution. Sub-micrometer Sn spheres were irradiated in a helium ion microscope with a sub-nm beam of 30 keV He ions. Above a fluence of ~10^17/cm², Sn extrusions appeared on the surface of the spheres, which were imaged using the secondary electron signal. Initially, small, pyramid-like faceted extrusions form at the equator of the spheres (north pole pointing to the ion source). Later, each sphere becomes completely covered by the extrusions. A model was developed that assumes that each He ion generate ~70 Frenkel pairs. The implanted helium atoms, interstitials, and vacancies will be confined by the oxide skin of the spheres. Some He atoms will occupy vacancies, which partially prevent their recombination with interstitials. Furthermore, the ion irradiation leads to erosion and opening of the SnO skin. The interstitials can now escape from the interior of the Sn sphere and form an epitaxial regular Sn lattice on the exterior. Transmission electron microscopy, Auger electron spectroscopy as well as TRI3DYN [1] and 3D kinetic lattice Monte Carlo [2] simulations support these findings. In addition, we provide a perspective on focused ion beams from our in-house development and production of liquid metal alloy ion sources, which can be used for applications from self-organized patterning, over altering magnetic or electrical properties, to quantum photonics and computation [3]. [1] Möller, Nucl. Instr. Meth. B 322 (2014) 23 [2] Strobel et al., Phys. Rev. B 64 (2001) 245422 [3] www.hzdr.de/fib

The data included in the publication are results of SET device simulations, Monte-Carlo simulations of physical processes (ion-beam mixing, phase seepration, Si nanodot formation) and micrographs taken by electron and ion microscopes.

Raw data for the publication: "Epitaxial lateral overgrowth of tin spheres driven and directly observed by helium ion microscopy". It contains helium ion microscopy, transmission electron microscopy, scanning electron microscopy as well as gallium focused ion microscopy images and XPS data. It shows how the irradiation of tin spheres with keV He ions causes epitaxial lateral overgrowth.

Broad ion irradiation of nanoobjects can considerably change their shape. Examples are ion-beam hammering [1], ion-induced shaping of buried particles [2], and ion-induced viscous flow of nanopillars [3]. Such shape changes are mainly driven by the kinetics of defects generated by binary collisions of ions and recoils. Here we report a new kind of ion-induced structure evolution. Sub-micrometer Sn spheres were irradiated with 30 keV He+ ions in a Helium Ion Microscope (HIM). Above a He+ fluence of ~ 10E17 /cm², Sn extrusions appear on the surface of the spheres and were imaged with the HIM. Initially, small, pyramid-like facetted extrusions form at the equator of the tin spheres (north pole pointing to the ion source). Later, each sphere becomes completely covered with tin and appears like a facetted single crystal cube. No Sn extrusions were observed for tin spheres with diameters smaller than ~100 nm. Transmission Electron Microscopy and Auger electron spectroscopy studies show that the tin spheres are covered with a few nm thick SnOx skin and that the extrusions are single crystals. A model was developed which assumes that the He+ ions generate Frenkel pairs in the body-centered tetragonal lattice of tin. The point defects are confined to the tin sphere by the SnO skin, and there is no preferred nucleation or annihilation of the point defects at the Sn-SnO interface. The recombination of interstitials with vacancies is partly inhibited by occupation with He atoms. This results in an increasing pressure of the “interstitial gas”. Simultaneously, He+ ion erosion creates openings in the SnO skin. The sputter coefficient increases with the angle of incidence, so that openings in the SnO skin form in the equator regions first. Once the tin interstitials find an opening in the SnO skin, they can escape from the interior of the Sn sphere and form an epitaxial regular Sn lattice on the outside. Due to the high Sn-SnO bond strength, the extruded tin wets the outer SnO sur

The roughness of a surface is known to have a strong influence on the sputtering process. Commonly used 1D Monte Carlo codes for calculating sputter yields show good agreement with experimental data only for comparably flat surfaces, whereas local ion incidence angles, shadowing and redeposition influence the sputter yields in both magnitude and angular dependence on rough surfaces. In the present work, we therefore investigated tungsten samples of largely different roughness, characterised by atomic force and confocal microscopy. A highly sensitive quartz crystal microbalance was used to determine sputter yields during ion irradiation. Low ion fluences were applied to ensure that the surface morphology did not change during irradiation. The results were used to benchmark our new ray-tracing simulation code SPRAY, which can take microscopy images without limitations in size as input. SPRAY was furthermore applied to perform systematic simulations for artificially roughened and computer-generated surfaces. A clear result was that the governing parameter for description of the sputtering behaviour is the mean value of the surface inclination angle distribution, rather than the commonly used root mean square roughness. Our simulations show that this parameter is universally applicable for a wide range of different surface structures.

A Transmission Ion Microscope (TIM), the Galileo prototype, has been built at the Luxembourg Institute of Science and Technology ( LIST) [1]. This is part of a new interest in the imaging properties of transmitted helium ions [2] [3] [4]. This allows the combination of both helium ions and neutrals to be detected after passing through a sample , or, if post sample deflection is used, then only the signal from the neutrals ( Figure 1 A). The helium ions have an energy between 10 keV and 20 keV and are produced in a Duoplasmatron ion source. The prototype instrument is very flexible and uses a microchannel plate (MCP) which can be configured in multiple ways to enable analysis modalities, producing datasets of varying dimensionality. 2D images can be obtained either with a phosphor screen and a defocussed beam in direct TIM mode (analogous to transmission electron microscopy) or with an anode plate to collect the total detector signal in scanning mode providing scanning-TIM (STIM) images. By using fast blanking electronics (similar to [5] ), pulses of ions can be used to add time-of-flight (TOF) information (Figure 3), allowing a TOF-STIM mode to collect 3D datasets (x, y, t). Alternatively, a delay line detector (DLD) can be used to provide detector plane images with corresponding TOF values at each detector pixel, to collect TOF-TIM (3D datasets (, x’, y’, t). Finally, detector imaged DLD TOF-STIM can be used, in this mode, for each beam position on the sample, the arrival time and position on the detector is recorded for each count (5D datasets, x, y, x’, y’, t). The prototype TIM is also equipped with a secondary electron (SE) detector providing additional SE intensity for each pixel position in STIM modes (Figure 1 B) . Example TOF datasets from materials science related samples (e.g. Au on Si) will be presented. In addition to microscopy, the effects of 20 keV helium ion irradiation on Au-Silica core-shell nanoparticles have been evaluated. Using bright field Tr

Broad ion irradiation of nanoobjects can considerably change their shape. Examples are ion-beam hammering [1], ion-induced shaping of buried particles [2], and ion-induced viscous flow of nanopillars [3]. Such shape changes are mainly driven by the kinetics of defects generated by binary collisions of ions and recoils. Here we report a new kind of ion-induced structure evolution. Sub-micrometer Sn spheres were irradiated with 30 keV He+ ions in a Helium Ion Microscope (HIM). Above a He+ fluence of ~ 10E17 /cm², Sn extrusions appear on the surface of the spheres and were imaged with the HIM. Initially, small, pyramid-like facetted extrusions form at the equator of the tin spheres (north pole pointing to the ion source). Later, each sphere becomes completely covered with tin and appears like a facetted single crystal cube. No Sn extrusions were observed for tin spheres with diameters smaller than ~100 nm. Transmission Electron Microscopy and Auger electron spectroscopy studies show that the tin spheres are covered with a few nm thick SnOx skin and that the extrusions are single crystals. A model was developed which assumes that the He+ ions generate Frenkel pairs in the body-centered tetragonal lattice of tin. The point defects are confined to the tin sphere by the SnO skin, and there is no preferred nucleation or annihilation of the point defects at the Sn-SnO interface. The recombination of interstitials with vacancies is partly inhibited by occupation with He atoms. This results in an increasing pressure of the “interstitial gas”. Simultaneously, He+ ion erosion creates openings in the SnO skin. The sputter coefficient increases with the angle of incidence, so that openings in the SnO skin form in the equator regions first. Once the tin interstitials find an opening in the SnO skin, they can escape from the interior of the Sn sphere and form an epitaxial regular Sn lattice on the outside. Due to the high Sn-SnO bond strength, the extruded tin wets the outer SnO sur

Au-silica core-shell nanoparticles have been irradiated with 20 keV He+ ions up to a maximum fluence of 4.7x10(17) ions/cm(2). The nanoscale structural and crystallographic evolution induced by He+ ion irradiation was followed at various stages using Transmission Electron Microscopy (TEM). During irradiation satellite Au clusters are formed around the main Au core, which remained crystalline even after the maximum He+ ion fluence. The spherical silica shell deformed into a hemisphere due to He+ ion irradiation. Three dimensional Monte-Carlo simulations, based on the binary collision approximation, have been performed on stacked infinite layers and an individual particle. The stacked layers results show that the He+ beam interacts with most of the nanoparticle and Au migrates in the direction of beam incidence agreeing with experimental findings. The individual particle results match the experiment in terms of the volume which is sputtered away however additional mechanisms, not included in the simulations, are present in the experiment during the satellite formation and silica shell deformation. These results show the ability for 20 keV He+ ions to be used for the modification of nanostructures. Furthermore, these results contribute to a quantitative understanding of the dynamic evolution of materials observed using microscopy techniques based on He+ ions.

He-induced nanostructured tungsten (so called W-fuzz) was bombarded with Ar ions under 60 degree and the dynamic erosion behaviour experimentally investigated. By using a highly sensitive quartz-crystal-microbalance technique in a particle catcher configuration the sputtered particles distribution of Wfuzz could be evaluated. In contrast to a at sample, where sputtered particles are emitted primarily in forward direction, we find that W-fuzz samples emit sputtered particles preferably in backward direction (i.e. in the direction of the incident ion beam). After continuous Ar irradiation of a W-fuzz sample the distribution approaches that of a at sample. In addition to experimental data we also show modelling results obtained with a state-of-the-art Monte-Carlo (MC) binary collision approximation (BCA) code TRI3DYN in full 3D. Surface morphology changes as monitored by SEM as well as the dynamic sputtering behaviour can be well reproduced by the full 3D MC-BCA code.

Perovskite nanowires are known to be strongly interacting with the moisture. In this work, we demonstrate that strontium manganate (SrMnO3) nanowire, an oxide perovskite, which is initially superhydrophilic, becomes a water repellent upon suitable modification by the ion beam. Highly crystalline SrMnO3 nanowires have been synthesized hydrothermally with an average diameter of about 60 nm and possess 4H crystal structure. The nanowires have been systematically irradiated with nitrogen ions at different energies and in a specific range of ion fluence. For low energy (5 keV), and at a relatively high threshold ion fluence, the nanowire surface starts to become hydrophobic, and the hydrophobicity increases with the ion fluence. However, at higher energies (50–100 keV), the sample surface becomes superhydrophobic at relatively low fluence, and beyond this point, the contact angle is almost independent of the ion fluence. Using state-of-the-art TRI3DYN computer-based simulation, and by employing density functional theory based calculations, we have shown that at low ion energy, the defects turn out to be a dominating factor for the samples to become hydrophobic. At higher ion energies, nanowelding and porous structure lead the way to become superhydrophobic.

In this work, for the first time, fragmentation and joining of tungsten oxide (WO3) nanorods induced by a broad ion beam are reported. Although at low energy (5 keV) and moderate ion fluence, nanorods fragment into smaller pieces along the length, at higher ion energies (50-100 keV), a contrary process occurs, which leads to the joining of the nanorods. A state-of-the-art ion-solid interaction simulation, namely, TRI3DYN, has been invoked to explore the possible mechanisms that reveal subtle contributions of surface defects, ion-beam mixing, and sputtering. High-resolution electron microscopy, photoluminescence study, and X-ray photoelectron spectroscopy support the observed results and proposed mechanisms. Such modifications have interesting effects on the electrical conductivity of the nanorod assembly. The change in sample color upon ion irradiation from initial white to yellow, light blue, deep blue, light green, and cyan shows an excellent and reversible chromatic response of tungsten oxide nanorods to irradiation. Such a property can be exploited to fabricate radiation sensors. The fragmentation and joining at different energy scales have essential implications in nanodevice fabrication through the bottom-up approach as well as for the development of fusion reactors.

He-induced nanostructured tungsten (so called W-fuzz) was bombarded with Ar ions under 60 degree and the dynamic erosion behaviour experimentally investigated. By using a highly sensitive quartz-crystal-microbalance technique in a particle catcher configuration the sputtered particles distribution of Wfuzz could be evaluated. In contrast to a at sample, where sputtered particles are emitted primarily in forward direction, we find that W-fuzz samples emit sputtered particles preferably in backward direction (i.e. in the direction of the incident ion beam). After continuous Ar irradiation of a W-fuzz sample the distribution approaches that of a at sample. In addition to experimental data we also show modelling results obtained with a state-of-the-art Monte-Carlo (MC) binary collision approximation (BCA) code TRI3DYN in full 3D. Surface morphology changes as monitored by SEM as well as the dynamic sputtering behaviour can be well reproduced by the full 3D MC-BCA code.

Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne+ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmission electron microscope. We found that the shape changes of the nanopillars depend on irradiation-induced amorphization and thermally driven dynamic annealing. While at room temperature, the nanopillars evolve to a conical shape due to ion-induced plastic deformation and viscous flow of amorphized Si, simultaneous dynamic annealing during the irradiation at elevated temperatures prevents amorphization which is necessary for the viscous flow. Above the critical temperature of ion-induced amorphization, a steady decrease of the diameter was observed as a result of the dominating forward sputtering process through the nanopillar sidewalls. Under these conditions the nanopillars can be thinned down to a diameter of ∼10 nm in a well-controlled manner. A deeper understanding of the pillar thinning process has been achieved by a comparison of experimental results with 3D computer simulations based on the binary collision approximation.

Si nanopillars for the fabrication of vertical nanowire gate-all-around Single Electron Transistors [1], have been irradiated with Si++, Pb+, Pb++, Au +, Au++, Au2 +, and Au3 + ions accelerated by 30 kV. A FIB of mass separated ions, extracted from a Liquid Metal Alloy Ion Source [2], has been scanned over regular arrays of Si nanopillars of different diameters and pillar distances. The irradiations have been performed at RT and 400∘C. Different morphological changes of the pillars like thinning, height reduction, tilting etc. have been observed which can be attributed to ion erosion (sputtering), impact-induced viscous flow or even transient nanosecond-scale melting [3]. The pillars were imaged by AFM, SEM, TEM and HIM. 3D Monte Carlo simulations [4] of ion and recoil trajectories based on the Binary Collision Approximation and Molecular Dynamics calculations have been carried out in order to discriminate the dominating processes. [1] EU project Ions4SET, Horizon 2020 grant No. 688072 [2] L.Bischoff, et al., Appl. Phys. Rev. 3 (2016) 021101 [3] C. Anders, K.-H. Heinig, H. Urbassek, Phys. Rev. B87 (2013) 245434 [4] W. Möller,NIM B322 (2014) 23

Ion beam induced amorphization of semiconductor nanostructures limits the applicability of ion beam processing to semiconductor nanostructures. Here, we present an approach that not only avoids this amorphization but in addition allows to tailor the lateral device dimensions of pillars and fins used in modern GAA and Fin-FET designs. Si nanopillars (diameter: 25–50 nm) have been irradiated by either 50 keV broad beam Si + or 25 keV focused Ne + beam from a helium ion microscope (HIM) at various temperatures using fluences of 2×10 16 cm −2 and higher. While at room temperature strong deformation of the nanopillars has been observed, the pillar shape is preserved above 325 ∘ C. This is attributed to ion beam induced amorphization of Si at low temperatures allowing plastic flow due to the ion hammering effect and surface capillary forces. Plastic deformation is suppressed for irradiation at elevated temperatures. Above 325 ∘ C, as confirmed by diffraction contrast in BF-TEM, the nanopillars remain crystalline, and are continuously thinned radially with increasing fluence down to 10 nm. This is due enhanced forward sputtering through the sidewalls of the pillar, and agrees well with 3D ballistic computer simulations. Supported by the H-2020 under Grant Agreement No. 688072.

Helium Ion Microscopy (HIM) [1, 2] is best known for its high resolution imaging capabilities of both conductive as well as insulating samples. However, since the introduction of Ne as an imaging gas for the gas field ion source (GFIS) an increasing number of nano-fabrication applications are realized. While the use of Neon as an imaging gas results in a somewhat lower lateral resolution (1.8 nm for 25 keV Ne compared to 0.5 nm for 30 keV He) the user usually benefits from the much higher cross section for nuclear stopping. The latter results in a larger number of sputtered atoms and bonds broken directly by small impact parameter collisions. After a brief introduction of the technique I will present results obtained using direct write milling low fluence ion beam irradiation and ion beam based mixing. In all three cases the electronic or magnetic properties of the target material will be altered at the nano-scale in a controlled way to achieve new functionality. The examples comprise ∙ The fabrication of semiconducting graphene nano-ribbons by direct milling [3] ∙ The fabrication of a lateral spin valve structure using low fluence ion irradiation [4] ∙ The formation of individual 3 nm Si clusters for a room temperature single electron transistor [5] For all presented examples the critical length scale of the nanostructure is smaller or in the range of collision cascade. This size regime can not be accessed with traditional broad beam based ion irradiation and holds many promises but also challenges that need to be overcome to enable new device concepts and new functional materials on the nano-scale. This work is supported by the European Union’s H-2020 research project ‘IONS4SET’ under Grant Agreement No. 688072

Rare earth (RE)-doped GaN nanowires (NWs), combining the well-defined and controllable optical emission lines of trivalent RE ions with the high crystalline quality, versatility, and small dimension of the NW host, are promising building blocks for future nanoscale devices in optoelectronics and quantum technologies. Europium doping of GaN NWs was performed by ion implantation, and structural and optical properties were assessed in comparison to thin film reference samples. Despite some surface degradation for high implantation fluences, the NW core remains of high crystalline quality with lower concentrations of extended defects than observed in ion-implanted thin films. Strain introduced by implantation defects is efficiently relaxed in NWs and the measured deformation stays much below that in thin films implanted in the same conditions. Optical activation is achieved for all samples after annealing, and while optical centers are similar in all samples, Eu 3+ emission from NW samples is shown to be less affected by residual implantation damage than for the case of thin films. The incorporation of Eu in GaN NWs was further investigated by nano-cathodoluminescence and X-ray absorption spectroscopy (XAS). Maps of the Eu-emission intensity within a single NW agree well with the Eu-distribution predicted by Monte Carlo simulations, suggesting that no pronounced Eu-diffusion takes place. XAS shows that 70-80% of Eu is found in the 3+ charge state while 20-30% is 2+ attributed to residual implantation defects. A similar local environment was found for Eu in NWs and thin films: for low fluences, Eu is mainly incorporated on substitutional Ga-sites, while for high fluences XAS points at the formation of a local EuN-like next neighbor structure. The results reveal the high potential of ion implantation as a processing tool at the nanoscale.

Fabrication of device though bottom-up approach and using nanowires as building blocks has received significant attention as one can build flexible electronics which can handle stress better than thin film based device. However successful joining of the nanowires for fabrication of such device remains a challenge till date. While several well researched joining techniques are available for metal based nanowires, the same for ceramic nanowires is scarce at present. In this work we explore ion beam induced formation of heterojunction between two metal oxide nanowires, namely hydrogen titanate (H2Ti3O7) and cuprous oxide (Cu2O). The electron microscopy studies reveal detailed structural modifications at the joining sections. The ion beam modifications are explained using state-of-the-art TRI3DYN simulations, which details about migration of atoms, defects, sputtering, redeposition and atomic mixing between the two nanowires and emphasize that such junction formation is caused mainly due to atomic collisional effects.

Ion beam irradiation of vertical nanopillar structures can be utilized to fabricate a vertical gate-all-around (GAA) single electron transistor (SET) device in a CMOS-compatible way. After irradiation of Si nanopillars (with a diameter of 35 nm and a height of 70 nm) by either 50 keV broad beam Si+ or 25 keV focused Ne+ beam from a helium ion microscope (HIM) at room temperature and a fluence of 2e16 ions/cm2, strong deformation of the nanopillars has been observed which hinders further device integration. This is attributed to ion beam induced amorphization of Si allowing plastic flow due to the ion hammering effect, which, in connection with surface capillary forces, dictates the final shape. However, plastic deformation can be suppressed under irradiation at elevated temperatures (investigated up to 672 K). Then, as confirmed by bright-field transmission electron microscopy, the substrate and the nanopillars remain crystalline and are continuously thinned radially with increasing fluence down to a diameter of 10 nm. This is attributed to enhanced forward sputtering through the sidewalls of the pillar, and found in reasonable quantitative agreement with the predictions from 3D ballistic computer simulation using the TRI3DYN program. This work is supported by the European Union’s H-2020 research project ‘IONS4SET’ under Grant Agreement No. 688072.

The usage of ion beam irradiation on vertical nanopillar structures is a prerequisite for fabricating a CMOS-compatible, vertical gate-all-around(GAA) SET device. After either 50 keV broad beam Si+ or 25 keV focused Ne+ beam from a helium ion microscope (HIM) irradiation of the nanopillars (with diameter of 35 nm and height of 70 nm) at room temperature with a medium fluence (2e16 ions/cm2), strong plastic deformation has been observed which hinders further device integration. This differs from predictions made by the Monte-Carlo based simulations using the program TRI3DYN. We assume that it is the result from the ion beam induced amorphization of Si accompanied by the ion hammering effect. The amorphous nano-structure behaves viscously and the surface capillary force dictates the final shape. To confirm such a theory, ion irradiation at elevated temperatures (up to 672 K) has been performed and no plastic deformation was observed under these conditions. Bright-field transmission electron microscopy micrographs as well as Electron Beam Diffraction confirmed the crystallinity of the substrate and nanopillars after HT-irradiation. In addition, a steady thinning process of the nanopillars to a diameter of 10 nm has been observed at higher fluencies. As the original pillar diameter is comparable to the size of the collision cascade, instead of direct knock-on sputtering, enhanced forward sputtering through the sidewalls of the pillar is responsible for this effect. The relation between ion beam energy, flux and temperature with the observed thinning of the nanopillars has been studied experimentally and compared to TRI3DYN simulations. Such a reliable and CMOS-compatible process could serve as a potential downscaling technique for large-scale fabrication of nanopillar-based electronics.

Ion beam irradiation of vertical nanopillar structures may be utilized to fabricate a vertical gate-all-around (GAA) single electron transistor (SET) device in a CMOS-compatible way. After irradiation of Si nanopillars (with a diameter of 35 nm and a height of 70 nm) by either 50 keV broad beam Si+ or 25 keV focused Ne+ beam from a helium ion microscope (HIM) at room temperature and a fluence of 2e16 ions/cm2, strong deformation of the nanopillars has been observed which hinders further device integration. This is attributed to ion beam induced amorphization of Si allowing plastic flow due to the ion hammering effect, which, in connection with surface capillary forces, dictates the final shape. However, plastic deformation can be suppressed under irradiation at elevated temperatures (investigated up to 672 K). Then, as confirmed by bright-field transmission electron microscopy, the substrate and the nanopillars remain crystalline and are continuously thinned radially with increasing fluence down to a diameter of 10 nm. This is attributed to enhanced forward sputtering through the sidewalls of the pillar and found in reasonable quantitative agreement with the predictions from 3D ballistic computer simulation using the TRI3DYN program. This work is supported by the European Union’s H-2020 research project ‘IONS4SET’ under Grant Agreement No. 688072.

The European H2020 project “ion4SET” is directed to the development of advanced computation and communication devices with significantly lower power consumption. The general objective is to demonstrate the manufacturability of single electron transistors (SETs) using CMOS compatible technology. The basic idea of this SET is a nano-pillar (NP) transistor having a single Si nanodot (ND) in the oxide layer separating source and drain. The ND is formed by ion beam mixing and post annealing from a Si top layer. The ion irradiation under normal incidence is a crucial process for the small nano-pillars which are only 10 to 30 nm in width and about 80 nm in height. In this work the evolution nano-pillars shape is investigated under heavy ion irradiation from a mass separated focused ion beam (FIB) for different ion energies at RT and 400°C target temperature. In particular Si (60 keV), Pb (30 and 60 keV), Au (30 and 60 keV) ions as well as polyatomic projectiles Au2 and Au3 (Uacc = 30 kV) with a fluence of 5 x 1015 cm-2 were applied. Whereas the Si ion irradiation of Si pillars at elevated temperatures only deforms the pillar tip, the heavy ion irradiation leads depending on the fluence up to a total removing of the pillar. The fluence variation was obtained on the slope of the beam profile. The irradiation at RT with Pb ions at 30 keV showed a more pronounced bending of the pillar due to the high energy deposition caused stress and viscous flow than that at 60 keV. The influence of the irradiation is also depending on the thickness and the distance of the pillars in different lithographic prepared fields. For a better comprehension of the irradiation results the experiments were simulated using the TRI3DYN code.