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Growing environmental concerns have driven the switch from lead-containing dielectric perovskite ceramics to lead-free alternatives such as silver niobate tantalate (Ag(Nb1-xTax)O3), where tantalum (Ta) substitution for niobium (Nb) enhances energy storage density. Thin film deposition presents a promising way for fabricating these materials for the use in capacitors. In this study, Ag(Nb1-xTax)O3 (0 ≤ x ≤ 0.5) thin films are synthesised via combinatorial reactive d.c. magnetron sputtering from metallic targets. The chemical and phase composition of the films are comprehensively analysed using scanning electron microscopy coupled with energy dispersive X-ray spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectrometry, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy. The findings demonstrate that reactive d.c. magnetron sputtering is a feasible technique for producing complex perovskite oxide thin films with customised chemical composition and microstructure. By enhancing the understanding of the Ag(Nb1-xTax)O3 material system, this study aims to contribute to the development of environmentally benign high-performance dielectrics that could replace lead-based ceramics in energy-storage applications.

A ion beam microprobe is applied for the analysis of friction-induced material transfer processes for ta-C/100Cr6 steel and ta-C/brass friction pairs. Using the appropriate combination of He and H ion beam Rutherford backscattering spectrometry and particle-induced X-ray emission spectrometry, detailed laterally- and depth-resolved information about the element composition of the friction pairs and formation of a tribo layer are obtained. The study shows the formation of a heterogeneously distributed, up to few nm thick surface layer of Fe on the surface of the ta-C coating, and the absence of a carbon transfer layer on the 100Cr6 counter body contact area after the friction treatment in high vacuum. This material combination is responsible for a high coefficient of friction of the order of 0.8. In contrast to that, a homogeneous, sub-nm thick brass transfer layer on the ta-C coating and a C- and O-rich tribolayer were formed in the central contact area of the brass counter body under ambient conditions, resulting in a low friction coefficient of 0.13.

Among the lead-free alternatives currently under research, silver niobate (AgNbO3) is a promising candidate to replace lead-based ceramics in dielectric capacitors for energy storage. Homogeneity and phase-purity of the used thin films are vital for optimal performance of these devices. In this study, a systematic variation of oxygen partial pressure and bias voltage during reactive d.c. magnetron co-sputtering from metallic targets is employed to synthesise AgNbO3 thin films. Structural and chemical composition of the films are investigated using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, energy dispersive X-ray spectroscopy, elastic recoil detection analysis, and Rutherford backscattering spectrometry. The findings emphasise the necessity of precise parameter control during deposition to avoid the presence of undesirable secondary phases like Ag and Ag2Nb4O11 and to ensure the formation of homogeneous and phase-pure AgNbO3 thin films. The gained insights demonstrate the potential of reactive d.c. magnetron sputtering for the deposition of lead-free AgNbO3 thin films, offering pathways for enhanced environmental compatibility of future dielectric capacitors.

The photoelectrochemical performance of Ta₃N₅ photoanodes is strongly impacted by the presence of shallow and deep defects within the bandgap. However, the role of such states in defining the stability under operational conditions is not well understood. Here, we use a highly controllable synthesis approach to create homogenous Ta₃N₅ thin films with tailored defect concentrations to establish the relationship between atomic-scale point defects and macroscale stability. Reduced oxygen contents increase long-range structural order but lead to high concentrations of deep-level states, while higher oxygen contents result in reduced structural order but beneficially passivate deep-level defects. Despite the different defect properties, the synthesized photoelectrodes degrade similarly under water oxidation conditions due to formation of a surface oxide layer that blocks interfacial hole injection and accelerates charge recombination. In contrast, under ferrocyanide oxidation conditions, we find that Ta₃N₅ films with high oxygen concentrations exhibit long-term stability, whereas those possessing lower oxygen contents and higher deep-level defect concentrations rapidly degrade. These results indicate that deep-level defects result in rapid trapping of photocarriers and surface oxidation but that shallow oxygen donors can be introduced into Ta₃N₅ to enable kinetic stabilization of the interface.

Ternary nitrides are rapidly emerging as promising compounds for optoelectronic and energy conversion applications, yet comparatively little of this vast composition space has been explored. Furthermore, the crystal structures of these compounds can exhibit a significant amount of disorder, the consequences of which are not yet well understood. Here, the deposition of bixbyite-type ZrTaN3 thin films is demonstrated by reactive magnetron co-sputtering and observed semiconducting character, with a strong optical absorption onset at 1.8 eV and significant photoactivity, with prospective application as functional photoanodes. It is found that Wyckoff-site occupancy of cations is a critical factor in determining these beneficial optoelectronic properties. First-principles calculations show that cation disorder leads to minor deviations in the total energy but modulates the bandgap by 0.5 eV, changing orbital hybridization of valence and conduction band states. In addition to demonstrating that ZrTaN3 is a promising visible light-absorbing semiconductor and active photoanode material, the findings provide important insights regarding the role of cation ordering on the electronic structure of ternary semiconductors. In particular, it is shown that not only cation order, but also the cationic Wyckoff site occupancy has a substantial impact on key optoelectronic properties, which can guide future design and synthesis of advanced semiconductors.

Thermochromic vanadium dioxide (VO2) undergoes a metal-to-semiconductor (MST) transition, a property that can be exploited for energy reduction in buildings in smart windows. We present thermochromic VO2-based films prepared in a roll-to-roll process on ultra-thin glass (0.1 mm) with High Power Impulse Magnetron Sputtering (HiPIMS) without any post annealing. We characterized the film structure with X-ray diffraction, the stoichiometry by Rutherford Backscattering Spectrometry, and the optical properties with spectrophotometry. The selected films (over 2.6 m x 0.3 m), sputtered from a V-metallic tube target doped with 1.2 at.% of W (V-W target), show a transition temperature of 28 °C and 34 °C, a luminous transmittance over 50% and a modulation of the solar energy transmittance of about 7 and 10%. We monitor the deposition control parameters in the roll-to-roll process with optical emission spectroscopy, and show that both the process parameters and target history impact the thermochromic properties. Finally, we extract the charge carrier concentration and mobility by modelling the transmittance and reflectance spectra, which indicates that the VO2-coating has a slight sub-stoichiometric character.

A selection of Late Bronze Age glass objects from the site of Amarna (Egypt) was analysed for their overall chemical composition, colourants and transition metals associated with the sources of cobalt ore. The objects were analysed by means of Particle Induced X-Ray and Gamma-ray Emission and Rutherford Backscattering Spectrometry at the IBC, HZDR, Dresden and the New AGLAE facility, C2RMF, Paris. The data was subsequently compared with further measurements obtained by portable X-Ray Fluorescence (and by Laser-Ablation Inductively-Coupled-Plasma Mass-Spectrometry) in order to sound the potential of these non-destructive methods to obtain new insights into the production process of glass from Amarna and its provenancing.

Ta3N5 shows great potential as a semiconductor photoanode for solar water splitting. However, its performance is hindered by poor charge carrier transport and trapping due to a high density of defects that introduce electronic states deep within its bandgap. Here, we demonstrate that controlled Ti doping of Ta3N5 can dramatically reduce the concentration of deep-level defects and enhance its photoelectrochemical performance, yielding a sevenfold increase in photocurrent density and a 300 mV cathodic shift in photocurrent onset potential compared to undoped material. Comprehensive characterization reveals that Ti+4 ions substitute Ta+5 lattice sites, thereby introducing compensating acceptor states, reducing concentrations of nitrogen vacancies and reduced Ta+3 states, and thereby suppressing trapping and recombination. Importantly, Ti doping offers distinct advantages compared to Zr, an intensively investigated dopant of Ta3N5 in the same group of the periodic table. Specifically, Ti+4 and Ta+5 have more similar atomic radii, allowing for substitution without introducing lattice strain, and Ti exhibits a lower affinity for oxygen than Zr, enabling its incorporation without increasing the oxygen donor content. Consequently, we demonstrate that the electrical conductivity can be tuned by over seven orders of magnitude. Thus, Ti doping in Ta3N5 provides a powerful basis for precisely engineering the optoelectronic characteristics of Ta3N5 and to substantially improve its functional characteristics as an advanced photoelectrode for solar fuels applications.

Thermochromic vanadium dioxide (VO2) undergoes a metal-to-semiconductor (MST) transition, a property that can be exploited for energy reduction in buildings in smart windows. We present thermochromic VO2-based films prepared in a roll-to-roll process on ultra-thin glass (0.1 mm) with High Power Impulse Magnetron Sputtering (HiPIMS) without any post annealing. We characterized the film structure with X-ray diffraction, the stoichiometry by Rutherford Backscattering Spectrometry, and the optical properties with spectrophotometry. The selected films (over 2.6 m x 0.3 m), sputtered from a V-metallic tube target doped with 1.2 at.% of W (V-W target), show a transition temperature of 28 °C and 34 °C, a luminous transmittance over 50% and a modulation of the solar energy transmittance of about 7 and 10%. We monitor the deposition control parameters in the roll-to-roll process with optical emission spectroscopy, and show that both the process parameters and target history impact the thermochromic properties. Finally, we extract the charge carrier concentration and mobility by modelling the transmittance and reflectance spectra, which indicates that the VO2-coating has a slight sub-stoichiometric character.

Atomic layer-deposited (ALD) TiO2 thin films on silicon were deposited using titanium tetrachloride (TiCl4), titanium tetraisopropoxide (TTIP), and tetrakis(dimethylamino)titanium (TDMAT) together with water vapor as the oxidant at temperatures ranging between 75 and 250 °C. The Si surface passivation quality of as-deposited and isothermally annealed samples was compared using photoconductance lifetime measurements in order to calculate their effective surface recombination velocities Seff. A low Seff of 3.9 cm/s (J0s = 24 fA/cm2) is achieved for as-deposited TiCl4-TiO2 at 75 °C when a chemically grown (i.e., from RCA cleaning) SiOx interface layer is present. Depositing TTIP-TiO2 at 200 °C on a chemically grown SiOx interface layer yields equivalent Seff values; however, in this case, TTIP-TiO2 requires a 5–15 min postdeposition forming gas anneal at 250 °C. In contrast, TDMAT-TiO2 was not found to provide a similar level of passivation with/without a chemically grown SiOx interface layer and postdeposition anneal. Modeling of the effective lifetime curves was used to determine the magnitude of the effective charge densities Qf in the TiO2 films. In all cases, Qf was found to be of the order of ∼10^11 q cm−2, meaning field-effect passivation arising from ALD TiO2 is relatively weak. By comparing the material properties of the various TiO2 films using ellipsometry, photothermal deflection spectroscopy, Raman spectroscopy, elastic recoil detection analysis, x-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy, we find experimental support for the role of Cl (in conjunction with hydrogen) playing a beneficial role in passivating dangling bond defects at the Si surface. It is concluded that low deposition temperature TiCl4 processes are advantageous, by providing the lowest Seff without any postanneal and a comparatively high growth per cycle (GPC).

Transition metal oxynitrides are a promising class of functional materials for photoelectrochemical (PEC) applications. Although these compounds are most commonly synthesized via ammonolysis of oxide precursors, such synthetic routes often lead to poorly controlled oxygen-to-nitrogen anion ratios, and the harsh nitridation conditions are incompatible with many substrates, including transparent conductive oxides. Here, we report direct reactive sputter deposition of a family of zirconium oxynitride thin films and the comprehensive characterization of their tunable structural, optical, and functional PEC properties. Systematic increases of the oxygen content in the reactive sputter gas mixture enable access to different crystalline structures within the zirconium oxynitride family. Increasing oxygen contents lead to a transition from metallic to semiconducting to insulating phases. In particular, crystalline Zr2ON2-like films have band gaps in the UV−visible range and are n-type semiconductors. These properties, together with a valence band maximum position located favorably relative to the water oxidation potential, make them viable photoanode candidates. Using chopped linear sweep voltammetry, we indeed confirm that our Zr2ON2 films are PEC-active for the oxygen evolution reaction in alkaline electrolytes. We further show that high-vacuum annealing boosts their PEC performance characteristics. Although the observed photocurrents are low compared to state-of-the-art photoanodes, these dense and planar thin films can offer a valuable platform for studying oxynitride photoelectrodes, as well as for future nanostructuring, band gap engineering, and defect engineering efforts.

Pulsed filtered cathodic arc deposition involves formation of energetic multiply charged metal ions, which help to form dense, adherent, and macroparticle-free thin films. Ions possess not only significant kinetic energy, but also potential energy primarily due to their charge, which for cathodic arc plasmas is usually greater than one. While the effects of kinetic ion energy on the growing film are well investigated, the effects of the ions’ potential energy are less known. In the present work, we make a step towards decoupling the contributions of kinetic and potential energies of ions on thin film formation. The potential energy is changed by enhancing the ion charge states via using an external magnetic field at the plasma source. The kinetic energy is adjusted by biasing the arc source (“plasma bias”), which allows us to approximately compensate the differences in kinetic energy while the substrate and ion energy detector remain at ground. However, application of an external magnetic field also leads to an enhancement of the ion flux and hence the desired complete decoupling of the potential and kinetic energy effects will require further steps. Charge-state-resolved energy distribution functions of ions are measured at the substrate position for different arc source configurations, and thin films are deposited using exactly those configurations. Detailed characterization of the deposited thin films is performed to reveal the correlations of changes in structure with kinetic and potential energies of multiply charged ions. It is observed that the cathode composition (Al:V ratio) strongly affects the formation of the thermodynamically stable wurtzite or the metastable cubic phase. The external magnetic field applied at the arc source is found to greatly alter the plasma and therefore to be the primary, easily accessible “tuning knob” to enhance film crystallinity. The effect of “atomic scale heating” provided by the ions’ kinetic and potential energies on the fi

Molybdenum disulfide (MoS2) few-layer films have gained considerable attention for their possible applications in electronics, optics, and also as a promising material for energy conversion and storage. Intercalating alkali metals, like lithium, offers the opportunity to engineer the electronic properties of MoS2. However, the influence of lithium on the growth of MoS2 layers has not been fully explored. Here, we have studied how lithium affects the structural and optical properties of the MoS2 few-layer films prepared using a new method based on one-zone sulfurization with Li2S as a source of the lithium. This method enables incorporation of Li into octahedral and tetrahedral sites of the already prepared MoS2 films or during the MoS2 formation. Our results discover an important effect of lithium promoting the epitaxial growth and horizontal alignment of the films. Moreover, we have observed a vertical-to-horizontal reorientation in vertically aligned MoS2 films upon lithiation. The measurements show long-term stability and preserved chemical composition of the horizontally aligned Li-doped MoS2.

The heaviest elements can exclusively be produced in actinide-target based nuclear fusion reactions with intense heavy-ion beams. Ever more powerful accelerators deliver beams of continuously increasing intensity, which brings targets of current technology to their limits and beyond. We motivate efforts to produce targets with improved properties, which calls for a better understanding of targets produced by molecular plating, the current standard method. Complementary analytical methods will help shedding more light on their chemical and physical changes in the beam. Special emphasis is devoted to the aspect of the optimum target thickness and the choice of the backing material.

The compositional, optical and structural stability of transparent conductive oxide SnO2:Ta (1.25 at.% Ta) thin films at 650 °C and 800 °C in air was studied under isothermal conditions. After the high-temperature treatment, the element composition and the optical spectra of the material were unchanged. The X-ray diffraction confirmed the conservation of a single rutile-type phase. Two strong Raman lines located out of the SnO2 phonon range indicated point defects in the material, which were identified as Sn vacancies and O interstitials by theoretical calculations. These point defects were partially healed out during the high-temperature treatment, without affecting the transmittance and reflectance of the material. Our study demonstrates an exceptional high in-air stability of Ta-doped SnO2 and encourages it for applications in fields, where transparent conductive oxides with high-temperature and oxidation stability are required. These are, e.g., selective transmitters for concentrated solar power or electrodes for dye-sensitized solar cells and dynamic random-access memories.

One of the main approaches to increase the tool lifetime during dry machining of “hard-to-machine” aerospace alloys is self-lubrication by the incorporation of noble metals in hard matrixes with good mechanical and diffusion barrier properties. In this paper, the diffusion of an Ag-rich layer sandwiched between two layers of either TiN or TiSiN is studied by transmission electron microscopy and in situ Rutherford backscattering spectrometry. The layer stacks were subjected to annealing treatments at 600 ºC and 800 ºC for 2 hours. Three processes were found to control the diffusion of silver: the morphology of the “sandwich” layers, the formation of small voids in the involved interfaces and the sublimation of Ag in the surface at temperatures near the melting point. The study revealed that the dense TiSiN matrix allowed a significantly better control of Ag diffusion than the more open TiN matrix.

In situ Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE) were applied to study the compositional and optical stability of a WAlSiN-based solar-selective coating (SSC) at high temperatures in vacuum. The samples were exposed to heating-cooling cycles between quasi room temperature and stepwise-increased high temperatures of 450 °C, 650 °C, and 800 °C, respectively. In situ RBS revealed full compositional stability of the SSC during thermal cycling. In situ SE indicated full conservation of the optical response at 450 °C and 650 °C, and minimal changes at 800 °C. The analysis of the ex situ optical reflectance spectra after the complete thermal cycling gave an unchanged solar absorptance of 0.94 and a slightly higher calculated thermal emittance at 800 °C of 0.16 compared to 0.15 after deposition. Cross-sectional element distribution analysis performed in scanning transmission electron microscopy mode confirmed the conservation of the SSC’s microstructure after the heating – cooling cycles. The study demonstrates compositional, optical, and structural stability of the WAlSiN-based solar-selective coating at temperatures targeted for the next generation of concentrated solar power plants.

In situ Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE) were applied to study the compositional and optical stability of a WAlSiN-based solar-selective coating (SSC) at high temperatures in vacuum. The samples were exposed to heating-cooling cycles between quasi room temperature and stepwise-increased high temperatures of 450 °C, 650 °C, and 800 °C, respectively. In situ RBS revealed full compositional stability of the SSC during thermal cycling. In situ SE indicated full conservation of the optical response at 450 °C and 650 °C, and minimal changes at 800 °C. The analysis of the ex situ optical reflectance spectra after the complete thermal cycling gave an unchanged solar absorptance of 0.94 and a slightly higher calculated thermal emittance at 800 °C of 0.16 compared to 0.15 after deposition. Cross-sectional element distribution analysis performed in scanning transmission electron microscopy mode confirmed the conservation of the SSC’s microstructure after the heating – cooling cycles. The study demonstrates compositional, optical, and structural stability of the WAlSiN-based solar-selective coating at temperatures targeted for the next generation of concentrated solar power plants.

Tetrahedral, hydrogen-free amorphous carbon (ta-C) is characterized by the highest sp3-carbon content and the highest hardness of HIT > 40 GPa of the group of diamond-like carbon (DLC) coatings [1]. The formation of sp3-C bonds in this material requires impinging atoms or ions with energies of around 100 eV, provided by cathodic vacuum arc or laser arc deposition [2]. Plasma filter techniques implemented in the recent years enable the production of ta-C coatings with significantly improved surface quality. In this study, friction and wear properties of ta-C coatings deposited by filtered Laser arc are studied as a function of the environment: in humid and dry air, in nitrogen as well as in vacuum from 1 mbar to 10-7 mbar. Low friction with coefficients of friction (COF) < 0.1 is found for the friction pair ta-C/ ta-C at normal pressure, nearly independently on the relative humidity. Likewise, the wear rates are not dependent on whether dry or humid conditions are established. In vacuum, the COF and wear rates increased by a factor of approx. ten and three, respectively. Raman studies reveal a complex structure evolution of ta-C in the wear track and on the contact area of the counter body with decreasing pressure. In the wear tracks at least two types of carbon are found. One of them shows an almost unchanged G line position and an unmeasurable ID/IG ratio as the initial coating, while the second one has a by 20 cm-1 lowered G line position and an ID/IG ratio of approx. 0.4. This structure has similar Raman signatures as the counter body contact area, indicating the formation of an identical tribolayer on both friction partners. Laterally and depth resolved atomic insight in the transfer layer formation is obtained by micro-beam Rutherford backscattering spectrometry for ta-C coatings in contact with steel, brass, alumina, and silicon carbide. Financial support by the DFG, grant No. 4157267

In situ measurements using RBS, ERD, and SE are less explored in characterizing solar absorber materials at high temperatures [1, 2]. In the present work, we report the W/WAlSiN/SiON/SiOO2 based spectrally selective solar absorber coating with excellent optical, compositional and structural properties at high temperatures [3, 4]. We have carried out in situ Rutherford backscattering spectrometry, elastic recoil detection and spectroscopic ellipsometry measurements at three different temperatures at 450°C, 650°C, and 800°C. An optical model describing perfectly the reflectance and ellipsometric data was developed. Further, the microstructural properties of the solar absorber coating are evaluated using cross-sectional transmission electron microscopy before and after annealing. Our data obtained before and after the heating experiments demonstrate excellent compositional, optical and structural stability of the coatings under the applied conditions. Furthermore, in situ ellipsometry showed the conservation of the optical properties of the W/WAlSiN/SiON/SiOO2 based spectrally selective solar absorber up to 800 °C, which is crucial for high-temperature applications. [1] Ramón Escobar Galindo, Matthias Krause, K. Niranjan and Harish Barshilia, in Sustainable Material Solutions for Solar Energy Technologies (ed. Mariana Fraga, Delaina Amos, Savas Sonmezoglu, Velumani Subramaniam, Elsevier, 2021). [2] Lungwitz, F. et al. Transparent conductive tantalum doped tin oxide as selectively solar-transmitting coating for high temperature solar thermal applications, Solar Energy Mater. Solar Cells 196, 84-93, doi:10.1016/j.solmat.2019.03.012 (2019). [3] K. Niranjan, A. Soum-Glaude, A. Carling-Plaza, S. Bysakh, S. John, H.C. Barshilia, Extremely high temperature stable nanometric scale multilayer spectrally selective absorber coating: Emissivity measurements at elevated temperatures and a comprehensive study on ageing mechanism, Solar Energy Mater. Sol. Cells

Solid lubricants, like ta-C (hydrogen-free tetrahedral amorphous carbon) coatings, are an active area of research to replace liquid lubricants. This substitution is important because of the negative environmental impact and high material consumption of liquid lubricants. The influence of soft metal counter bodies on the unlubricated friction behaviour of hydrogen-free carbon coatings has mostly been studied for doped a-C coatings so far. All these studies show that low friction and wear can only be achieved if a tribolayer is formed to protect the contact. Even with a formed tribolayer, its composition is crucial for the frictional behaviour, making the investigation of this composition essential. A study currently underway aims to identify friction-induced surface changes like material loss of the coating, material transfer between the counter body and the coating, or the formation of a tribolayer. The current work presents Ion Beam Analysis methods to deliver laterally and depth-resolved element analysis of the wear track on the coating and the contact area of the counter bodies (CB). In a first test, a ta-C coating has been subjected to pin-on-disk tests with various metallic and ceramic CBs. He and H ion microbeams have been used to scan over the tracks and the contact areas of the CBs. Both RBS and PIXE have been used and first results are presented. It is shown that, in this case, RBS yields the more useful information. Both, a 2 MeV He ion beam and a 3 MeV H ion beam provide valuable results. The advantages of each type of ion beam depend on the sample and the information needed. As shown in this work, RBS with a 2 MeV He ion beam is useful to determine the transfer layer of a (soft) metal CB to the ta-C coating, whereas 3 MeV H RBS can be used to determine the presence of C and O on the CB because of the increased non-Rutherford cross-sections for these elements.

A series of CuCr₂O₄ thin films has been successfully synthesized via a facile and cost-effective reactive Direct Current Magnetron Sputtering technique at room temperature. These coatings were deposited to evaluate their suitability as absorber material for the next generation of concentrated solar power plants [1]. The composition of the films was controlled using as key parameters the power ratio between Cu and Cr targets as well as the oxygen flux. The films deposited without intentional substrate heating were initially amorphous and needed to be annealed at 800 °C for one hour to obtain a spinel-like crystal structure [2]. RBS was used to characterize the composition of the as-deposited and annealed coatings. The structural properties were investigated by Raman spectroscopy and XRD. Structural characterization allows us to evidence that slight deviation in stoichiometry promotes the formation of secondary phases in the films. In this concern, we use in-situ Raman spectroscopy and spectroscopic ellipsometry to characterize the structural evolution of the films as a function of temperature in a controlled oxygen atmosphere. The study evidences the evolution from amorphous to fully crystallized material. Additionally, the influence of the film roughness in the optical performance of the coatings with appropriate composition was explored to enhance the optical properties of the film. References: 1) Ramón Escobar Galindo, Matthias Krause, K. Niranjan and Harish Barshilia, in Sustainable Material Solutions for Solar Energy Technologies (ed. Mariana Fraga, Delaina Amos, Savas Sonmezoglu, Velumani Subramaniam, Elsevier, 2021). 2) Matthias Krause, Johanna Sonnenberg, Frans Munnik, Jörg Grenzer, René Hübner, Aurelio Garcia-Valenzuela, Sibylle Gemming in Materialia 18 (2021) 101156.

The treatment and coating of electrode/electrolyte interfaces is a promising route to increase lithiumion battery performance for next-generation energy storage. This work reports on the atomic layer deposition process combining lithium hexamethyl disilazide (LiHMDS) and trimethylphosphate (TMP), with an additional trimethylaluminum (TMA) pulse in between. Minimal traces of aluminum are observed, yet the deposited layer is amorphous instead of crystalline. The TMA-TMP interaction plays a key role in this process and is revealed by time-resolved full-range quadrupole mass spectrometry. We hypothesize that the interaction of unreacted OCH3 groups with TMA and the formation of Li4P2O7 units lead to higher growth and structural changes as compared to the phosphate process without TMA. The amorphous mix of Li4P2O7 and Li3PO4 units in the films grown with TMA benefits the conductive properties of the material: an ionic conductivity of 1.47±0:09·10−7 S/cm at 30°C, with an activation energy 0.58±0:02 eV is observed.

The paper describes the recovery effects of pulsed electron beam treatment in Ge single crystals implanted with various doses of Sn ions at room and low temperatures. A protective coat of 100 nm Sn was applied as a sacrificial layer. The implanted layers were studied by RBS/cRBS (Rutherford BackScattering/channeled Rutherford BackScattering) method, SIMS (Secondary Ion Mass Spectrometry) and TEM (Transmission Electron Microscopy). Defects revealed in channelled RBS spectra were analysed by McChasy code. The results show that the Sn concentration attains 1% and more with very good substitutionality. They also reveal excellent lattice recovery after e-beam melting. Suggestions are derived as regards further improvement of pulsed e-beam technique.

Solid lubricants, like ta-C (hydrogen-free tetrahedral amorphous carbon) coatings, are an active area of research to replace liquid lubricants. This substitution is important because of the negative environmental impact and high material consumption of liquid lubricants. The influence of soft metal counter bodies on the unlubricated friction behaviour of hydrogen-free carbon coatings has mostly been studied for doped a-C coatings so far. All these studies show that low friction and wear can only be achieved if a tribolayer is formed to protect the contact. Even with a formed tribolayer, its composition is crucial for the frictional behaviour, making the investigation of this composition essential. A study currently underway aims to identify friction-induced surface changes like material loss of the coating, material transfer between the counter body and the coating, or the formation of a tribolayer. The current work presents Ion Beam Analysis methods to deliver laterally and depth-resolved element analysis of the wear track on the coating and the contact area of the counter bodies (CB). In a first test, a ta-C coating has been subjected to pin-on-disk tests with various metallic and ceramic CBs. He and H ion microbeams have been used to scan over the tracks and the contact areas of the CBs. Both RBS and PIXE have been used and first results are presented. It is shown that, in this case, RBS yields the more useful information. Both, a 2 MeV He ion beam and a 3 MeV H ion beam provide valuable results. The advantages of each type of ion beam depend on the sample and the information needed. As shown in this work, RBS with a 2 MeV He ion beam is useful to determine the transfer layer of a (soft) metal CB to the ta-C coating, whereas 3 MeV H RBS can be used to determine the presence of C and O on the CB because of the increased non-Rutherford cross-sections for these elements.

Tetrahedral, hydrogen-free amorphous carbon (ta-C) is characterized by the highest sp3-carbon content and the highest hardness of HIT > 40 GPa of the group of diamond-like carbon (DLC) coatings [1]. The formation of sp3-C bonds in this material requires impinging atoms or ions with energies of around 100 eV, provided by cathodic vacuum arc or laser arc deposition [2]. Plasma filter techniques implemented in the recent years enable the production of ta-C coatings with significantly improved surface quality. In this study, friction and wear properties of ta-C coatings deposited by filtered Laser arc are studied as a function of the environment: in humid and dry air, in nitrogen as well as in vacuum from 1 mbar to 10-7 mbar. Low friction with coefficients of friction (COF) < 0.1 is found for the friction pair ta-C/ ta-C at normal pressure, nearly independently on the relative humidity. Likewise, the wear rates are not dependent on whether dry or humid conditions are established. In vacuum, the COF and wear rates increased by a factor of approx. ten and three, respectively. Raman studies reveal a complex structure evolution of ta-C in the wear track and on the contact area of the counter body with decreasing pressure. In the wear tracks at least two types of carbon are found. One of them shows an almost unchanged G line position and an unmeasurable ID/IG ratio as the initial coating, while the second one has a by 20 cm-1 lowered G line position and an ID/IG ratio of approx. 0.4. This structure has similar Raman signatures as the counter body contact area, indicating the formation of an identical tribolayer on both friction partners. Laterally and depth resolved atomic insight in the transfer layer formation is obtained by micro-beam Rutherford backscattering spectrometry for ta-C coatings in contact with steel, brass, alumina, and silicon carbide. Financial support by the DFG, grant No. 4157267

In situ measurements using RBS, ERD, and SE are less explored in characterizing solar absorber materials at high temperatures [1, 2]. In the present work, we report the W/WAlSiN/SiON/SiOO2 based spectrally selective solar absorber coating with excellent optical, compositional and structural properties at high temperatures [3, 4]. We have carried out in situ Rutherford backscattering spectrometry, elastic recoil detection and spectroscopic ellipsometry measurements at three different temperatures at 450°C, 650°C, and 800°C. An optical model describing perfectly the reflectance and ellipsometric data was developed. Further, the microstructural properties of the solar absorber coating are evaluated using cross-sectional transmission electron microscopy before and after annealing. Our data obtained before and after the heating experiments demonstrate excellent compositional, optical and structural stability of the coatings under the applied conditions. Furthermore, in situ ellipsometry showed the conservation of the optical properties of the W/WAlSiN/SiON/SiOO2 based spectrally selective solar absorber up to 800 °C, which is crucial for high-temperature applications. [1] Ramón Escobar Galindo, Matthias Krause, K. Niranjan and Harish Barshilia, in Sustainable Material Solutions for Solar Energy Technologies (ed. Mariana Fraga, Delaina Amos, Savas Sonmezoglu, Velumani Subramaniam, Elsevier, 2021). [2] Lungwitz, F. et al. Transparent conductive tantalum doped tin oxide as selectively solar-transmitting coating for high temperature solar thermal applications, Solar Energy Mater. Solar Cells 196, 84-93, doi:10.1016/j.solmat.2019.03.012 (2019). [3] K. Niranjan, A. Soum-Glaude, A. Carling-Plaza, S. Bysakh, S. John, H.C. Barshilia, Extremely high temperature stable nanometric scale multilayer spectrally selective absorber coating: Emissivity measurements at elevated temperatures and a comprehensive study on ageing mechanism, Solar Energy Mater. Sol. Cells

The transparent conductive tantalum doped tin oxide is a potential candidate for applications in concentrated solar power technology, dye-sensitized solar cells and dynamic random access memories [1], [2], [3]. In all these fields, high-temperature stability in air is mandatory to preserve its functionality. In this work we demonstrate the compositional and structural in-air-stability of SnO2:Ta thin films at 650 °C and 800 °C for 12 hours. While the element composition and optical spectra were unchanged and the X-ray diffractograms revealed the conservation of a single-phase rutile-type crystal structure, some strong Raman lines of SnO2:Ta underwent substantial changes upon tempering. Quantum ab initio calculations of pristine and Ta-doped SnO2 with systematically varied point defects indicated that preferentially Sn vacancies and excess O atoms are responsible for these strong and unexpected Raman signatures. These defects are partially healed during high-temperature exposure, but that does not affect the functionality of SnO2:Ta as transparent conductor under these harsh conditions. This study provides a comprehensive understanding of crystal and defect structure of Ta-doped SnO2 prior to and after high temperature treatment in air for the first time and encourages its application in different fields where high-T stability, transparency and conductivity are required. [1] F. Lungwitz et al., Transparent conductive tantalum doped tin oxide as selectively solar-transmitting coating for high temperature solar thermal applications, Solar Energy Mater. Solar Cells 199, 84 (2019), doi: 10.1016/j.solmat.2019.03.012 [2] R. Ramarajan, et al. Large-area spray deposited Ta-doped SnO2 thin film electrode for DSSC application, Solar Energy 211, 547-559 (2020), doi:10.1016/j.solener.2020.09.042. [3] C. J. Cho, et al. Ta-Doped SnO2 as a reduction-resistant oxide electrode for DRAM capacitors, Journal of

A series of CuCr₂O₄ thin films has been successfully synthesized via a facile and cost-effective reactive Direct Current Magnetron Sputtering technique at room temperature. These coatings were deposited to evaluate their suitability as absorber material for the next generation of concentrated solar power plants [1]. The composition of the films was controlled using as key parameters the power ratio between Cu and Cr targets as well as the oxygen flux. The films deposited without intentional substrate heating were initially amorphous and needed to be annealed at 800 °C for one hour to obtain a spinel-like crystal structure [2]. RBS was used to characterize the composition of the as-deposited and annealed coatings. The structural properties were investigated by Raman spectroscopy and XRD. Structural characterization allows us to evidence that slight deviation in stoichiometry promotes the formation of secondary phases in the films. In this concern, we use in-situ Raman spectroscopy and spectroscopic ellipsometry to characterize the structural evolution of the films as a function of temperature in a controlled oxygen atmosphere. The study evidences the evolution from amorphous to fully crystallized material. Additionally, the influence of the film roughness in the optical performance of the coatings with appropriate composition was explored to enhance the optical properties of the film. References: 1) Ramón Escobar Galindo, Matthias Krause, K. Niranjan and Harish Barshilia, in Sustainable Material Solutions for Solar Energy Technologies (ed. Mariana Fraga, Delaina Amos, Savas Sonmezoglu, Velumani Subramaniam, Elsevier, 2021). 2) Matthias Krause, Johanna Sonnenberg, Frans Munnik, Jörg Grenzer, René Hübner, Aurelio Garcia-Valenzuela, Sibylle Gemming in Materialia 18 (2021) 101156.

Solid lubricants are an active research topic due to many factors, an important one being the elimination of current liquid lubrication because of its environmental impact. The tribological behaviour of different solid lubricants depends on the gas en¬vironment while testing. The most often-used solid lubricant coating is MoS2. A newer one still under research is ta-C (hydrogen-free, tetra-edic, amorphous carbon) that behaves like a polar opposite to MoS2. ta-C relies on free hydrogen and hydroxide ions to passivate free bonds resulting from the wear testing. In a first test, a ta-C coating has been subjected to tribological tests with counter bodies made of various materials. The aim is to study tribological surface changes like material loss of the coating or material transfer from the counter body, processes which aren’t fully understood yet. Both the wear tracks on the ta-C coating and the counter bodies have been subjected to Ion Beam Analysis using a high energy ion microprobe. Both PIXE (Particle Induced X-ray Emission) and RBS (Rutherford Backscattering Spectrometry) measurements have been performed using a 2 MeV He ion beam and a 3 MeV H ion beam. Results for the wear tracks obtained with a brass and a Al2O3 counter body are presented as well as results on the counter bodies themselves. The advantages and drawbacks of the results obtained with different ions and different methods are presented. These results show that it is important to combine the measurements in order to obtain a complete picture of the damage caused by the wear tests.

The diverse physical and chemical properties of aerosols can cause a diverse impact on air quality, cloud nucleation, planetary radiation balance, public health, etc. Besides carbon particles from incomplete combustion, mineral particles from Saharan dust also present a significant contribution to the changes. It is estimated that 400 to 700 million tons of dust is transported from Sahara every year and with the particular wind directions it is carried to the Mediterranean or even to the north of Europe (Prospero, 1996). It has recently been shown that these particles induce serious problems for asthmatics (Gutierrez et al., 2020). To understand the origin of pollution, necessary input information presents knowing the source apportionment of aerosols. Techniques such as non-destructive particle induced X-ray emission (PIXE) (Lucarelli et al., 2018) and energy dispersive x-ray spectroscopy (SEM-EDS) (Longoria-Rodríguez et al., 2021) have been successfully applied for chemical microanalysis of individual particles. However, knowing both the physical and chemical properties of particles towards nm scales, which would cover all aerosol sizes, is still a challenging task. In our study, we have thus implemented the correlative approach using advanced ion beam techniques to study both physical and chemical properties of mineral particles from Saharan dust collected on quartz fiber filters on Cyprus Atmospheric Observatory (35.04oN,33.06 Eo; 535 m a.s.l.) using a combination of the virtual impactor and Aethalometer AE33 (Aerosol d.o.o.). We have implemented Helium Ion Microscopy (HIM), capable of sub-nm resolution imaging with high depth-of-field contrast, followed by micro-PIXE elemental analysis done on the same filter region. Information from backscattered high-energy ions was found particularly suitable for the registration and overlap of complementary images (Figure 1). The study has revealed the size, shape, architecture, and surface topography of individual mineral p

For the best possible limit of detection of any thin film‐based magnetic field sensor, the functional magnetic film properties are an essential parameter. For sensors based on magnetostrictive layers, the chemical composition, morphology and intrinsic stresses of the layer have to be controlled during film deposition to further control magnetic influences such as crystallographic effects, pinning effects and stress anisotropies. For the application in magnetic surface acoustic wave sensors, the magnetostrictive layers are deposited on rotated piezoelectric single crystal substrates. The thermomechanical properties of quartz can lead to undesirable layer stresses and associated magnetic anisotropies if the temperature increases during deposition. With this in mind, we compare amorphous, magnetostrictive FeCoSiB films prepared by RF and DC magnetron sputter deposition. The chemical, structural and magnetic properties determined by elastic recoil detection, X‐ray diffraction, and magneto‐optical magnetometry and magnetic domain analysis are correlated with the resulting surface acoustic wave sensor properties such as phase noise level and limit of detection. To confirm the material properties, SAW sensors with magnetostrictive layers deposited with RF and DC deposition have been prepared and characterized, showing comparable detection limits below 200 pT/Hz(^1/2) at 10 Hz. The main benefit of the DC deposition is achieving higher deposition rates while maintaining similar low substrate temperatures.

The (opto)electronic properties of Ta3N5 photoelectrodes are often dominated by defects, such as oxygen impurities, nitrogen vacancies, and reduced tantalum centers, impeding fundamental studies of its electronic structure, chemical stability, and photocarrier transport. Here, we synthesize high quality Ta3N5 thin films by reactive magnetron sputtering and subsequent NH3 annealing at varying temperatures. The resulting films are characterized by nearly-ideal N/Ta stoichiometry, low O content, and small Urbach energies. Both the crystallinity and material quality improve with increasing annealing temperatures up to 940 °C, while higher annealing temperatures introduce additional disorder within the Ta3N5 lattice, leading to reduced photoelectrochemical performance. These changes are also reflected in the surface and bulk composition, showing the elimination of oxygen impurities at moderate annealing temperatures and the loss of nitrogen at high annealing temperatures. As a consequence, defect-related sub-gap optical absorption initially decreases due to reduced oxygen impurity concentration, and subsequently increases due to increased formation of nitrogen vacancies. The high material quality enables us to unambiguously identify the nature of the Ta3N5 band gap as indirect, thereby resolving a long-standing controversy regarding the most fundamental characteristic of this material as a semiconductor. The assignment of Ta3N5 as indirect semiconductor is further supported by the suppression of disorder-induced band-edge photoluminescence with improved structural order within the Ta3N5 films.

CuCr2O4 thin films grown by physical vapour deposition were studied in order to evaluate their potential as absorber material for the next generation of concentrated solar power plants. A series of Cu-Cr-O thin films was deposited by reactive ion beam sputtering. The Cr/Cu ratio in the sputter target is demonstrated as the most important parameter to achieve the intended film stoichiometry. In-air annealing at 800 °C leads to structural transformations of the as-deposited films and results in phase compositions according to those expected from the ternary Cu-Cr-O phase diagram. Tetragonal CuCr2O4 with 98.6 at.% phase purity regarding the solid film constituents is obtained for the appropriate Cr/Cu ratio in the sputter target. CuCr2O4 thin films absorb light in the entire solar spectral range from 300 nm to 2500 nm. Their energy gap is found to be < 0.5 eV, and their solar absorptance is estimated to be (0.85 +/- 0.03). The dense microstructure with good thermal conductivity, full adhesion to the substrate, and a relatively low surface roughness are discussed as technological advantages of CuCr2O4 thin films grown by physical vapour deposition.

Electronic stopping cross section of tungsten for light ions was experimentally measured in a wide energy interval (20 to 6000 keV for protons and 50 to 9000 keV for helium) in backscattering and transmission geometries. The measurements were carried out in three laboratories (Austria, Germany and Sweden) using five different set-ups, the stopping data deduced from different data sets showed excellent agreement amongst each other, with total uncertainty varying within 1.5–3.8% for protons and 2.2–5.5% for helium, averaged over the respective energy range of each data set. The final data is compared to available data and to widely adopted semi-empirical and theoretical approaches, and found to be in good agreement with most adopted models at energies around and above the stopping maximum. Most importantly, our results extend the energy regime towards lower energies, and are thus of high technological relevance, e.g., in fusion research. At these low energies, our findings also revealed that tungsten – featured with fully and partially occupied f- and d-subshells, respectively – can be modeled as an electron gas for the energy loss process.

In recent years, molybdenum disulfide (MoS2) has been investigated due to its unique electronic, optical, and mechanical properties with a variety of applications. Sulfurization of pre-deposited MoO3 layers is one of the methods of the preparation of large-area MoS2 thin films. The MoO3 layers have been grown on c-sapphire substrates, using two different techniques (rf sputtering, pulsed laser deposition). The films were subsequently annealed in vapors of sulfur at high temperatures what converted them to MoS2 films. The quality of MoS2 is strongly influenced by the properties of the precursor MoO3 layers. The pre-deposited MoO3, as well as the sulfurized MoS2, have been characterized by several techniques including Raman, Rutherford backscattering spectroscopy, atomic force microscopy, scanning electron microscopy, and X-ray diffraction. Here we compare two types of MoS2 films prepared from different MoO3 layers to determine the most suitable MoO3 layer properties providing good quality MoS2 films for future applications.

The thermal stability of two AlyTi1-y(OxN1-x) layers prepared by cathodic vacuum arc deposition with different oxygen content was studied after high temperature annealing of the samples in air. These layers were designed to be part of solar-selective coating (SSC) stacks. Compositional and microstructural characterization of the thin films was performed before and after the thermal treatment by elastic recoil detection (ERD), transmission electron microscopy and Raman spectroscopy. AlyTi1-yN sample was stable after 2 hours of annealing at 450ºC. Initial stages of the formation of a surface oxide layer after annealing at 650 ºC were observed both by ERD and Raman analysis. Contrarily, no changes were found after 2 hours annealing treatment either at 450 and 650ºC in the composition and microstructure of AlyTi1-y(OxN1-x) sample. In both samples the formation of a surface anatase TiO2 film was reported after 2 hours annealing at 800°C. These compositional and microstructural changes were correlated with the optical properties determined by spectroscopic ellipsometry. A transition from metallic to dielectric behaviour with increasing annealing temperature was observed. These results complete the durability studies on the designed SSCs based on AlyTi1-y(OxN1-x) materials, confirming that these stacks withstand breakdown at 600ºC in air.

Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of growth conditions onstructural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for the PtSe2 layers grown at elevated temperatures (600 °C). The films exhibit signatures for a long-range in-plane ordering resembling an epitaxial growth. The charge carrier mobility determined by Hall-effect measurements is up to 24 cm²/V.s

An alternative concept to achieve solar selectivity for solar thermal materials and applications consists in the use of spectrally selective transmitter coatings.[1] These are characterized by a high transmittance in the solar range and a high reflectance in the thermal range of the electromagnetic spectrum. Suitable materials for selective transmitters are dielectric/metal/dielectric multilayers and transparent conductive oxides (TCOs).[2] The concept has a series of advantages compared to multilayer- or cermet-based solar-selective coatings (SSCs) like the easiness of manufacturing, the possibility to use standard materials as transmitter (e.g., indium tin oxide (ITO)) and absorber (e.g. Pyromark or black chrome), and the adaptability to specific requirements with respect to receiver temperature and solar concentration factor. After a conceptual introduction, an analysis of solar plant parameters, i.e., operation temperature and solar concentration, for which this concept provides a better solar efficiency than state-of-the-art bare black body absorber, will be given.[3] We will then review the recent developments in the field, which include an excellent high-temperature in-air stability of such type of solar coatings.[4] In the second part of the talk, we will report own results toward a new TCO on black body absorber coating. Vacuum and in-air stability of the TCO SnO2:Ta at 800 °C and its structural properties before and after heat exposure are demonstrated. As potential absorber, the formation, structure, and optical properties of dense, PVD-grown CuCr2O4 thin films are studied. They are obtained in high purity from as-deposited samples by a simple in-air annealing step at 800 °C and absorb light in the whole solar range from 300 nm to 2500 nm. [1] C.E. Kennedy, Review of Mid- to High-Temperature Solar Selective Absorber Materials, NREL Technical Reports, NREL - National Renewable Energy Laboratory, Golden, Colorado, USA, 2002.

The diverse physical and chemical properties of aerosols can cause a diverse impact on air quality, cloud nucleation, planetary radiation balance, public health, etc. Besides carbon particles from incomplete combustion, mineral particles from Saharan dust also present a significant contribution to the changes. It is estimated that 400 to 700 million tons of dust is transported from Sahara every year and with the particular wind directions it is carried to the Mediterranean or even to the north of Europe (Prospero, 1996). It has recently been shown that these particles induce serious problems for asthmatics (Gutierrez et al., 2020). To understand the origin of pollution, necessary input information presents knowing the source apportionment of aerosols. Techniques such as non-destructive particle induced X-ray emission (PIXE) (Lucarelli et al., 2018) and energy dispersive x-ray spectroscopy (SEM-EDS) (Longoria-Rodríguez et al., 2021) have been successfully applied for chemical microanalysis of individual particles. However, knowing both the physical and chemical properties of particles towards nm scales, which would cover all aerosol sizes, is still a challenging task. In our study, we have thus implemented the correlative approach using advanced ion beam techniques to study both physical and chemical properties of mineral particles from Saharan dust collected on quartz fiber filters on Cyprus Atmospheric Observatory (35.04oN,33.06 Eo; 535 m a.s.l.) using a combination of the virtual impactor and Aethalometer AE33 (Aerosol d.o.o.). We have implemented Helium Ion Microscopy (HIM), capable of sub-nm resolution imaging with high depth-of-field contrast, followed by micro-PIXE elemental analysis done on the same filter region. Information from backscattered high-energy ions was found particularly suitable for the registration and overlap of complementary images (Figure 1). The study has revealed the size, shape, architecture, and surface topography of individual mineral p

Solid lubricants are an active research topic due to many factors, an important one being the elimination of current liquid lubrication because of its environmental impact. The tribological behaviour of different solid lubricants depends on the gas en¬vironment while testing. The most often-used solid lubricant coating is MoS2. A newer one still under research is ta-C (hydrogen-free, tetra-edic, amorphous carbon) that behaves like a polar opposite to MoS2. ta-C relies on free hydrogen and hydroxide ions to passivate free bonds resulting from the wear testing. In a first test, a ta-C coating has been subjected to tribological tests with counter bodies made of various materials. The aim is to study tribological surface changes like material loss of the coating or material transfer from the counter body, processes which aren’t fully understood yet. Both the wear tracks on the ta-C coating and the counter bodies have been subjected to Ion Beam Analysis using a high energy ion microprobe. Both PIXE (Particle Induced X-ray Emission) and RBS (Rutherford Backscattering Spectrometry) measurements have been performed using a 2 MeV He ion beam and a 3 MeV H ion beam. Results for the wear tracks obtained with a brass and a Al2O3 counter body are presented as well as results on the counter bodies themselves. The advantages and drawbacks of the results obtained with different ions and different methods are presented. These results show that it is important to combine the measurements in order to obtain a complete picture of the damage caused by the wear tests.

Atomic layer deposition (ALD) of lithium-containing films is of interest for the development of next-generation energy storage devices. Lithium hexamethyl disilazide (LiHMDS) is an established precursor to grow these types of films. The LiHMDS molecule can either be used as a single-source precursor molecule for lithium or as a dual-source precursor molecule for lithium and silicon. Single-source behavior of LiHMDS is observed in the deposition process with trimethylphosphate (TMP) resulting in the deposition of crystalline lithium phosphate (Li3PO4). In contrast, LiHMDS exhibits dual-source behavior when combined with O-2 plasma, resulting in a lithium silicate. Both processes were characterized with in situ ellipsometry, in situ time-resolved full-range mass spectrometry, X-ray photoelectron spectroscopy (XPS), and elastic recoil detection analysis (ERDA). When we combined both reactants into a three-step LiHMDS-TMP-O-2* or LiHMDS-O-2*-TMP process, the dual-source nature of LiHMDS emerged again. By carefully combining our measurements, it is shown that film growth with LiHMDS (in combination with TMP and O-2 plasma) is driven by dipole-driven self-saturated surface interactions combined with dissociative chemisorption. We show that when hydroxyl groups are present on the surface, silicon will be incorporated in the films. These insights benefit the general understanding of the behavior of the LiHMDS and TMP precursors and may facilitate their effective use in ternary or quaternary processes.

Lithium-silicon compounds are used as active material in negative electrodes of Li-ion batteries. The knowledge of Li diffusion in these materials is of importance for an optimization of charging/discharging rates and achievable maximum specific capacity as well as for an understanding of the basic lithiation mechanism. We carried out Li tracer self-diffusion experiments on ion-beam sputter-deposited LixSi(O) thin films for x ~ 0.25 and x ~ 4.5 using LixSi/6LixSi hetero-structures in combination with secondary ion mass spectrometry in line scan like mode. Measurements with elastic recoil detection analysis revealed the presence of a considerable amount of oxygen in the films. The diffusivities follow the Arrhenius law in the temperature range between 300 and 500 °C with an activation energy of 0.8 – 0.9 eV. The film containing a higher amount of Li shows faster diffusion by one order of magnitude. The Li diffusivities in the investigated Li-rich materials are several orders of magnitude higher than in Li-poor LixSi films (x = 0.02 to 0.06) as given in literature because of a lower activation energy. This indicates the presence of a direct interstitial-like mechanism. Oxygen present in samples with the same Li concentration of x = 0.06 also enhances diffusion but does not lead to a reduction in the activation energy.

Hafnium oxide was deposited from tetrakis(dimethylamino)hafnium (TDMAHf) and water by atomic layer deposition (ALD) on heated 400 Si wafers covered with native oxide in the temperature range from 100 C to 350 C. Optimized self-limiting ALD reaction and smallest hydrogen impurity level have been realized for a substrate temperature of 300 C. The stoichiometry of deposited films and hydrogen impurity level were measured by elastic recoil detection analysis. The hafnium to oxygen ratio showed the expected 1:2 value. Besides hydrogen, no other impurities could be detected. Furthermore, a strong correlation between the growth rate per cycle (GPC), film uniformity and level of hydrogen impurities was observed. Based on this result, the easily accessible GPC can be used as a first indication for the hydrogen impurity level in ALD grown thin films. Furthermore, the characterization of the crystal structure showed the appearance of some crystallites in an amorphous matrix already for a growth temperature of 250 C and a pure crystalline layer at a growth temperature of 350 C. The increased crystallinity with increasing growth temperature was attributed to a higher seed concentration and a constant crystal size.

Hafnium oxide was deposited from tetrakis(dimethylamino)hafnium (TDMAHf) and water by atomic layer deposition (ALD) on heated 400 Si wafers covered with native oxide in the temperature range from 100 C to 350 C. Optimized self-limiting ALD reaction and smallest hydrogen impurity level have been realized for a substrate temperature of 300 C. The stoichiometry of deposited films and hydrogen impurity level were measured by elastic recoil detection analysis. The hafnium to oxygen ratio showed the expected 1:2 value. Besides hydrogen, no other impurities could be detected. Furthermore, a strong correlation between the growth rate per cycle (GPC), film uniformity and level of hydrogen impurities was observed. Based on this result, the easily accessible GPC can be used as a first indication for the hydrogen impurity level in ALD grown thin films. Furthermore, the characterization of the crystal structure showed the appearance of some crystallites in an amorphous matrix already for a growth temperature of 250 C and a pure crystalline layer at a growth temperature of 350 C. The increased crystallinity with increasing growth temperature was attributed to a higher seed concentration and a constant crystal size.

In thin amorphous carbon (a-C) films being in contact with a thin nickel layer, metal-induced crystallization and layer exchange (LE) occur at temperatures lower than 700 °C. Analysis of thin film stacks with different architectures (a-C/Ni, Ni/a-C and Ni/a-C/Ni) by means of ion beam analysis, Raman spectroscopy, X-ray diffraction and transmission electron microscopy revealed that the degree of LE and the structural quality of the crystallized carbon layers depend on the initial layer sequence. A LE degree of approx. 93 % was found for Ni/a-C bilayers, where graphenic layers formed on the Ni surface, whereas in a-C/Ni bilayers only 83 % of carbon was transferred from the surface towards the fused silica substrate. The diffusion of carbon in the outward direction produces turbostratic carbon with basal planes oriented parallel to the Ni surface, while for the inward direction planar and curved turbostratic structures coexist. The crystallization and the LE are driven by the crystallization energy of a-C. The LE is mediated by the wetting of the Ni grain boundaries by carbon. The directionality of the LE was explained primarily by the difference in the surface and interface energies in the a-C/Ni and Ni/a-C stacks that were obtained from thermodynamic considerations.