Search

Magnetic property (e.g. spin order) of support is of great importance in the rational design of heterogeneous catalysts. Herein, we have taken the Ni-supported ferromagnetic (FM) CrBr3 support (Nix/CrBr3) to thoroughly investigate the effect of spin-order on electrocatalytic oxygen reduction reaction (ORR) via spin-polarized density functional theory calculations. Specifically, Ni loading induces anti-FM coupling in Ni–Cr, leading to a transition from FM-to-ferrimagnetic (FIM) properties, while Ni–Ni metallic bonds create a robust FM direct exchange, benefiting the improvement of the phase transition temperature. Interestingly, with the increase in Ni loading, the easy magnetic axis changes from out-of-plane (2D-Heisenberg) to in-plane (2D-XY). The adsorption properties of Nix/CrBr3, involving O2 adsorption energy and configuration, are not governed by the d-band center but strongly correlate with magnetic anisotropy. It is noteworthy that the applied potential and electrolyte acidity triggers spin-order transition phenomena during the ORR and induces the catalytic pathway change from 4e− ORR to 2e− ORR with the excellent onset potential of 0.93 V/reversible hydrogen electrode, comparable to the existing most excellent noble-metal catalysts. Generally, these findings offer new avenues to understand and design heterogeneous catalysts with magnetic support. [ABSTRACT FROM AUTHOR]

Programmable and non-volatile spin-based logic devices have attracted significant interest for use in logic circuits. Realization of logic operations via spin–orbit torque (SOT) driven magnetization switching could be a crucial step in the direction of building logic-in-memory architectures. In this work, we demonstrate experimentally, the realization of four logic operations in a heavy metal/ferrimagnet bilayer structure via SOT switching. We also propose a general scheme for choosing input parameters to achieve programmable logic operations. The bulk and tunable perpendicular magnetic anisotropy and relatively lower saturation magnetization in ferrimagnets are found to make them more energy efficient in performing logic operations, as compared to conventional ferromagnets. Thus, ferrimagnets are promising candidates for use in logic-in-memory architectures, leading to the realization of user-friendly spin logic devices in the future. [ABSTRACT FROM AUTHOR]

Alloying heavy metals (HMs) has been an effective method for enhancing the efficiency of spin–orbit torque. In this study, we demonstrate that Pt100−xWx/Pt/Co/Ta multilayers still maintain perpendicular magnetic anisotropy after high-temperature annealing. Doping tungsten (W) into HM platinum (Pt) at the bottom of a Pt/Co/Ta multilayer significantly increases the spin Hall angle (θ S H ) and reduces the critical switching current density (Jc). The harmonic Hall test results show that the θ S H of the Pt88W12 alloy film is approximately 0.29, which is higher than that of the pure Pt film (0.15). The magnetization switching test reveals that the Jc of Pt94W6 alloy film is approximately 4.892 × 106 A/cm2, which is 51.9% lower than that of the pure Pt film. This study offers a valuable method for reducing power consumption and enhancing the efficiency of related application devices. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) transition metal dichalcogenides with 2H-phases, as a unique platform of valleytronics, display valley polarization and the well-known anomalous valley Hall effect when stacking with 2D magnetic substrates. In this study, we employ first-principles calculations to investigate the magnetic states, band structures, and magnetic proximity-dependent valley properties of 2D van der Waals heterostructures Cr2Ge2Te6/2H-MX2 (M = Mo, W, and X = S, Se, Te). Our findings reveal that the heterostructures possess stacking-dependent spontaneous valley polarization as well as pristine perpendicular magnetic anisotropy. Additionally, the Berry curvature and circular polarization demonstrate the presence of spin–momentum coupling characteristics, while the calculated non-zero Hall voltage indicates that the anomalous valley Hall effect can be achieved in valley-polarized systems. Furthermore, due to the strain effect and the electronic polarization at the interface, Cr2Ge2Te6/2H-MX2 heterostructures undergo the transition from semiconductors to semimetals upon substitution of early chalcogen elements. These calculations provide valuable insights for practical applications of valleytronics in 2D van der Waals heterostructure systems. [ABSTRACT FROM AUTHOR]

Topological materials have shown promising potential in the spintronics application due to their conspicuous efficiency of charge-to-spin conversion. Our research investigates the temperature-dependent spin–orbit torque (SOT) from sputtered WTex. We reveal a strong temperature dependence of SOT and realize the current-induced SOT switching of WTex with perpendicular magnetic anisotropy structure under a wide range of 12 K to room temperature. Our findings reveal the temperature dependence of sputtered WTex and may pave the way for the spintronics application of semimetals under cryogenic temperature. [ABSTRACT FROM AUTHOR]

J-aggregates, which are supramolecular assemblies that exhibit unique optical properties owing to their excitonic interactions, have potential applications in artificial light-harvesting systems and fluorescence biosensing. Although J-aggregates are formed in solution, in situ observations of their structures and behaviors in solution remain scarce. In this study, we investigated the J-aggregates of 1,1′-dioctadecyl-3,3,3′,3′-tetramethylindocarbocyanine perchlorate [DiIC18(3)] in methanol/water (M/W) binary solvents using fluorescence imaging as well as polarized absorption and fluorescence measurements to explore the relationship between their structure and macroscopic optical properties under static conditions. Fluorescence images revealed that the DiIC18(3) J-aggregates have fibrous structures in the M/W = 44/56 (v/v) binary solvent. We measured the polarization-angle dependence of the fluorescence intensity of the fibrous J-aggregates to determine the direction of their transition dipole moment. Furthermore, the J-band absorbance was dependent on the polarization angle of the linearly polarized incident light, even in the absence of an external force such as that generated by a flow or stirring, indicating that the J-aggregates "spontaneously" aligned in solution. We also monitored the time evolution of the degree of alignment of the fibrous J-aggregates, which revealed that the formation and elongation of the fibers induced their alignment, resulting in the observed macroscopic optical anisotropy in solution. [ABSTRACT FROM AUTHOR]

Atomic-scale spectroscopic imaging of sputtered magnetic tunnel junction structures with a thick oxygen-rich MgO barrier reveals the diffusion of iron and cobalt into the MgO barrier from CoFeB electrodes. First principles calculations are performed to (1) confirm that Fe diffusion through Mg vacancies is energetically favorable, (2) quantify the reduction of interfacial perpendicular magnetic anisotropy due to Fe diffusion into MgO, and (3) predict that the presence of Fe impurities in MgO causes an increased leakage and a tunneling magnetoresistance decrease. Through the chemical shift of the Fe L3 edge and the peak ratio Fe L3/Fe L2 measured by electron energy loss spectroscopy, we suggest that, within MgO, iron with mixed oxidation state Fe2+ and Fe3+ or higher is found in the as-grown structure, which is reduced by annealing to Fe2+. These results indicate that the stoichiometry of as-deposited MgO barrier layers plays an important role in controlling the microstructure and optimizing the performance of magnetic tunnel junctions. [ABSTRACT FROM AUTHOR]

Perpendicular magnetic anisotropy (PMA) in magnetic thin films has attracted much attention due to its potential applications in spintronics devices. Here, we report the continuous strain-mediated PMA in epitaxial (111) CoFe 2 O 4 (CFO) thin films grown on (0001) LiTaO 3 substrates. A large variation in lattice strain (∼ 0.9 %) in a continuous way is realized in the CFO thin films by changing substrate temperature during deposition due to the difference in the thermal expansion coefficient between CFO and LiTaO 3. As a result, the PMA of the (111) CFO thin films can be continuously mediated by the strain with uniaxial magnetic anisotropy energy in the range of 0.12 - 14.69 × 10 6 erg/cm 3. Furthermore, the strain as well as the consequent PMA in the (111) CFO thin films can be maintained within the thickness of 25–205 nm, which is consistent with the scenario of the magnetoelastic effect. Our results reveal that the CFO/LiTaO 3 system can be regarded as an ideal platform to realize robust PMA and its continuous strain tuning in the (111) CFO thin films by virtue of strain-induced magnetic anisotropy. [ABSTRACT FROM AUTHOR]

Synthetic antiferromagnetic (SAF) nanoplatelets (NPs) with perpendicular magnetic anisotropy based on archetype SAF structures, e.g., Pt/Co/Ru/Co/Pt are of particular interest for torque-related bio-applications due to their large uniaxial magnetic anisotropy. However, when the diameter of the NPs is reduced, the magnetic properties change. For instance, the coercive field increases and starts to vary strongly from NP to NP in a batch due to an increased variation in the reversal probability dominated by local defects. In this study, we investigate how the concentration of boron (B) in Co 1 − x B x affects the switching properties of NPs, because the addition of B renders the Co layer amorphous and hence introduces more defects. Moreover, it reduces variations in local crystalline anisotropy making the magnetic properties of the NPs more soft. Specifically, we show that the coercivity of the NPs decreases with higher B concentration. This decrease is explained by two mechanisms: (i) the loss of interfacial anisotropy due to less Co–Pt hybridization at the Pt–Co interface and (ii) an increase in the surface's magnetic domain nucleation site density leading to a narrower distribution of the coercivity of an ensemble of NPs. This understanding will greatly help the field of NP-torque related applications as the spread in applied torque from the NPs to their surroundings can be homogenized. [ABSTRACT FROM AUTHOR]

Mn 3 Sn, a metallic antiferromagnet with an anti-chiral 120 ° spin structure, generates intriguing magneto-transport signatures such as a large anomalous Hall effect, spin-polarized current with novel symmetries, anomalous Nernst effect, and magneto-optic Kerr effect. When grown epitaxially as MgO(110)[001] ∥ Mn 3 Sn(0 1 ¯ 1 ¯ 0)[0001], Mn 3 Sn experiences a uniaxial tensile strain, which changes the bulk sixfold anisotropy to a twofold perpendicular magnetic anisotropy (PMA). Here, we investigate the field-assisted spin–orbit-torque (SOT)-driven dynamics in single-domain Mn 3 Sn with PMA. We find that for non-zero external magnetic fields, the magnetic octupole moment of Mn 3 Sn can be switched between the two stable states if the input current is between two field-dependent critical currents. Below the lower critical current, the magnetic octupole moment exhibits a stationary state in the vicinity of the initial stable state. On the other hand, above the higher critical current, the magnetic octupole moment shows oscillatory dynamics which could, in principle, be tuned from the 100s of megahertz to the terahertz range. We obtain approximate analytic expressions of the two critical currents that agree very well with the numerical simulations for experimentally relevant magnetic fields. We also obtain a unified functional form of the switching time vs the input current for different magnetic fields. Finally, we show that for lower values of Gilbert damping (α ≲ 2 × 10 − 3 ), the critical currents and the final steady states depend significantly on α. The numerical and analytic results presented in our work can be used by both theorists and experimentalists to understand the SOT-driven order dynamics in PMA Mn 3 Sn and design future experiments and devices. [ABSTRACT FROM AUTHOR]

Rare-earth iron garnets (REIGs) are the benchmark systems for magnonics, including the longitudinal spin Seebeck effect (LSSE). While most research has focused on single-crystalline REIGs on complimentary garnet substrates, moving to more, cost-effective complementary metal-oxide semiconductor (CMOS)-compatible substrates is important to integrate REIG thin films with existing technology. In this regard, we grow a 130 nm-thick polycrystalline gadolinium iron garnet (GdIG) film on the Si/SiO2 substrate and investigate the temperature-dependent LSSE. Interestingly, the polycrystalline GdIG film exhibits perpendicular magnetic anisotropy (PMA) at room temperature which is induced by tensile in-plane (IP)-strain originating from the thermal-expansion mismatch between the GdIG film and the substrate during rapid thermal annealing. Further, a spin-reorientation transition from the out-of-plane IP direction below TS = 180 K is observed. Additionally, the film reveals a magnetic compensation temperature, T Comp , of ≈240 K. The LSSE voltage not only demonstrates a sign-inversion around T Comp , but also shows noticeable changes around T S. As compared to a single-crystalline GdIG film, the lower LSSE voltage for the polycrystalline GdIG is attributed to the higher effective magnetic anisotropy and enhanced magnon scattering at the grain boundaries. Our study not only paves the way for the cost-effective growth of CMOS-compatible REIG-based systems with PMA for magnonic memory and information processing applications, but also highlights the fact that the spincaloritronic and spin-insulatronic properties of the polycrystalline REIGs follow those of their single-crystalline counterparts with reduced spin-to-charge conversion efficiency through LSSE which can be tuned further by controlling the average gran size and interface engineering. [ABSTRACT FROM AUTHOR]

The antiferromagnetic orthoferrite YFeO3 possesses fascinating magnetic properties for spintronics, such as terahertz spin dynamics, ultrafast domain wall motion, and long magnon decay length. YFeO3 belongs to a special family of antiferromagnets that show an unusually strong non-trivial Kerr response due to its weak ferromagnetism. The highly stable antiferromagnetic domains without any spontaneous spin rotation transitions below the 645 K Néel temperature may be useful for nanoscale device applications. We report the successful fabrication of high-quality twinning-free (110)-oriented YFeO3 films by pulsed laser deposition. Detailed structural and magnetic characterization revealed that the crystal structure and magnetic properties of the YFeO3 films are comparable to bulk single crystals. We show that the spin rotation under high magnetic fields follows the two-sublattice approximation model. The film surface is atomically flat with step-terrace surface morphology. A longitudinal magneto-optic Kerr (MOKE) rotation of 10 mdeg was observed at room temperature, which is consistent with earlier reports on bulk single crystals. The in-plane anisotropy of the Kerr response corresponds to the obtained magnetic anisotropy from the SQUID measurement. The large MOKE signal enables the imaging of antiferromagnetic domains and their reversal. The domain size was found to be larger than 100 μm. These high-quality YFeO3 thin films facilitate the fabrication of antiferromagnetic spintronic devices and provide a convenient platform for studying various spin-related phenomena in thin films and at interfaces. [ABSTRACT FROM AUTHOR]

We combine on-the-fly trajectory surface hopping simulations and the doorway–window representation of nonlinear optical response functions to create an efficient protocol for the evaluation of time- and frequency-resolved fluorescence (TFRF) spectra and anisotropies of the realistic polyatomic systems. This approach gives the effective description of the proper (e.g., experimental) pulse envelopes, laser field polarizations, and the proper orientational averaging of TFRF signals directly from the well-established on-the-fly nonadiabatic dynamic simulations without extra computational cost. To discuss the implementation details of the developed protocol, we chose cis-azobenzene as a prototype to simulate the time evolution of the TFRF spectra governed by its nonadiabatic dynamics. The results show that the TFRF is determined by the interplay of several key factors, i.e., decays of excited-state populations, evolution of the transition dipole moments along with the dynamic propagation, and scaling factor of the TFRF signals associated with the cube of emission frequency. This work not only provides an efficient and effective approach to simulate the TFRF and anisotropies of realistic polyatomic systems but also discusses the important relationship between the TFRF signals and the underlining nonadiabatic dynamics. [ABSTRACT FROM AUTHOR]

A key piece for spintronic applications, the so-called electron g -factor engineering is still predominantly based on the semiconductor bulk g factor and its dependence on the bandgap energy. In nanostructures, however, the mesoscopic confinement introduces exclusive anisotropies, transforming scalar g factors into tensors, enabling different renormalization mechanisms as routes for fine-tuning the electron g factor. These questions we address in this comparative theoretical analysis between the obtained electron g -factor (tensor) anisotropies for realistic InAs | AlSb - and In 0.53 Ga 0.47 As | InP -based multilayers. The electron g -factor anisotropy, i.e., the difference between g factors for magnetic fields parallel and perpendicular to the interfaces, is analytically calculated via perturbation theory using the envelope-function approach based on the eight-band Kane model. Effects from bulk, interfacing, tunnel coupling, and structure inversion asymmetry are systematically introduced within a transparent comparative view; differences between obtained anisotropies, such as in the magnitude, sign, and other fine details, are analyzed in terms of the heterostructure parameters, mapped over different confining and tunnel-coupling regimes without requiring elaborated numerical computations. [ABSTRACT FROM AUTHOR]

We conducted a study on the variations of the fragment anisotropy parameters (β) along the Fano profiles for the predissociation of the D2 molecule. These variations, known as β profiles, were measured for the D(2l) fragments from the predissociation of the 4 p π D ′ Π u 1 υ ′ = 1 and 4 p σ B ″ Σ u + 1 υ ′ = 2 states. The measured β profiles show significant asymmetry and broader linewidths compared to the corresponding Fano profiles. By fitting the β profiles, we were able to determine the fragment anisotropy parameters associated with the resonance state, continuum state, and the interference effect between them. Additionally, we determined the ratios of the absorption cross sections between the unperturbed and perturbed continuum states interacting with the resonance states although these ratios were found to be very small. Furthermore, we derived approximate formulas to calculate the parameters characterizing the β profile. Despite the linewidths of the four Fano profiles being narrower than our instrumental resolution, we were still able to determine the product of the linewidth with the Fano q parameters. These findings demonstrate the utility of the β profile as an effective tool for studying the predissociation dynamics in diatomic molecules. [ABSTRACT FROM AUTHOR]

In this study, we systematically investigated the anomalous Nernst effect in perpendicularly magnetized amorphous TbFeCo thin films with various compositions. It was found that the magnitude of the off diagonal thermopower (ODT), which corresponds to the anomalous Nernst effect, can be uniformly explained with respect to the Tb content regardless of the concentration above or below the compensation composition. The maximum ODT of 1.3 μ V/K and the thermoelectric conductivity of 1.59 A/mK at room temperature were obtained, which is more significant than other perpendicular magnetic anisotropy thin films to achieve a large Nernst voltage for roll-type thermoelectric devices. By considering the thermoelectric tensor, Mott's equation, and the scaling law, it was shown both experimentally and theoretically that the magnitudes of the first and second terms contributing to the anomalous Nernst effect are comparable. It was also found that the ODT of TbFeCo thin films is twice or more significant than the product of the Seebeck coefficient and the Hall angle. Furthermore, amorphous metals and Mn-alloys with a large Berry curvature are located above the relation that the ODT is twice the product of the Seebeck coefficient and the Hall angle, which means that amorphous metals are expected to enhance the ANE. [ABSTRACT FROM AUTHOR]

Nutation and precession resonances in an antiferromagnet subjected to a dc magnetic field are investigated by employing coupled linearized inertial Landau–Lifshitz–Gilbert equations describing the dynamics of magnetizations of antiferromagnet sublattices with uniaxial magnetocrystalline anisotropy. Analytical expressions for the eigenfrequencies of such an antiferromagnet are obtained for the longitudinal and transverse directions of the external dc field and for different ranges of its strength. The effect of inertia on the values of the resonant frequencies is shown for all possible states of the antiferromagnet in both the longitudinal and transverse directions of the external field. The estimated resonant frequencies are compared with those obtained from the numerical solution of the system of undamped inertial Landau–Lifshitz–Gilbert equations for closed trajectories of sublattice magnetizations. The good agreement of both independent estimations is demonstrated. [ABSTRACT FROM AUTHOR]

The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectronics and spintronics devices. Here, using first-principles calculations, we have demonstrated the ability of controlling the magnetism of magnetized graphene monolayers by interfacing them with a two-dimensional ferroelectric material. When the 3d transition metal (TM) is adsorbed on the graphene monolayer, its magnetization easy axis can be flipped from in-plane to out-of-plane by the ferroelectric polarization reversal of In2Se3, and the magnetocrystalline anisotropy energy (MAE) can be high to −0.692 meV/atom when adopting the Fe atom at bridge site with downward polarization. This may be a universal method since the 3d TM-adsorbed graphene has a very small MAE, which can be easily manipulated by the ferroelectric polarization. As a result, the inherent mechanism is analyzed by the second variation method. [ABSTRACT FROM AUTHOR]

Hole mobility anisotropy in 4H-SiC was investigated based on both experimental and theoretical approaches. First, the authors established a complete database of the anisotropic hole mobility along both directions parallel and perpendicular to the c -axis in 4H-SiC over the wide acceptor density and temperature ranges by preparing Hall bar structures on p-type SiC(11 2 ¯ 0) epitaxial layers. Empirical equations for the mobility along each direction vs the acceptor density and temperature were determined, which should be useful for the simulation and designing of any SiC devices. In addition to that, the anisotropy in the hole mobility was extracted from the experimental results, and its origin was discussed focusing on that in the effective mass (m ∗) of holes. The obtained mobility ratio was far from the m ∗ ratio at the valence band maximum, and an averaged m ∗ along each direction was determined by theoretical calculation taking into account the energy distribution of holes. Consequently, the authors revealed that the anisotropic hole mobility is explained quantitatively by the anisotropic m ∗ considering the E – k dispersion over the entire first Brillouin zone. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) intrinsic ferromagnetic (FM) materials are promising candidates for fabricating next generation high-performance spintronic devices. However, all experimentally verified 2D FM semiconductors have Curie temperature (Tc) far below room temperature, which hinders their practical applications. Based on first-principles calculations, a stable and previously undiscovered 2D CrGaS3 structure is predicted, which is a semiconductor with an indirect bandgap of 1.99 eV and displays out-of-plane magnetic anisotropy. More importantly, it exhibits high-temperature ferromagnetism, with Tc ranging between 520 and 814 K. The high Tc is attributed to the presence of both direct-exchange and super-exchange interactions that are ferromagnetic, along with the eg-px/py-eg super exchange having a zero virtual exchange gap. Furthermore, it has been observed that the magnetic anisotropy can be tuned by external strain. These findings indicate its potential as a promising candidate for the rapid development of 2D spintronic applications. [ABSTRACT FROM AUTHOR]

With the aim of producing realistic coarse-grained models of homopolymers, we introduce a tabulated backbone-oriented anisotropic potential. The parameters of the model are optimized using statistical trajectory matching. The impact of grain anisotropy is evaluated at different coarse-graining levels using cis-polybutadiene as a test case. We show that, at the same time, tuning the aspect ratio of the grains can lead to a better density and structure and may reduce the unphysical bond crossings by up to 90%, without increasing the computation time too much and thereby jeopardizing the main advantage of coarse-grained models. [ABSTRACT FROM AUTHOR]

We report an investigation into the substantially large and customizable exchange anisotropy (HEA) and coercivity (HC) in a set of bottom-pinned Ir7Mn93/Co2FeAl bilayer heterostructures fabricated using ion-beam sputtering at room temperature (RT) in the presence of an in-situ in-plane static magnetic field of 1 kOe. This modulation is achieved by controlling the microstructural parameter (i.e., grain diameter) of the antiferromagnetic (AF) Ir7Mn93 (IrMn) layer. These bilayers revealed strong positive exchange anisotropy (PEA) at RT, while negative exchange anisotropy (NEA) became evident when field-cooled to 15 K in the presence of 3 kOe. By systematically controlling the AF grain diameter from ∼5.39 to ∼6.94 nm, the PEA and NEA were found to increase by a factor of ∼2.1 and ∼1.8, respectively. However, once the AF grain diameter exceeded the necessary threshold for thermal stability, further enhancement in grain diameter above ∼6.94 nm led to a reduction in both HEA and HC. This decrease was attributed to a reduction in pinning centers at the AF/FM (ferromagnet) interface. The training data are fitted by utilizing various theoretical models, such as thermal relaxation, Binek's model, and spin relaxation model. The spin relaxation model was found to be applicable to fit the complete range of training data, encompassing both thermal and athermal decay, within the context of frozen and rotatable spins. [ABSTRACT FROM AUTHOR]

Two-dimensional magnetic materials have been increasingly studied and discussed in the field of spintronics due to their unique electronic properties, high spin polarizability, and a variety of magnetic properties. In this paper, we report a new two-dimensional bilayer hexagonal monolayer material bilayer hexagonal structure (BHS)-CrN2 by first-principles calculations. The BHS-CrN2 nanosheet is an intrinsic ferromagnetic semiconductor material, and the Curie temperature obtained by Monte Carlo simulation is 343 K. The absence of a significant imaginary frequency in the phonon spectrum indicates the dynamic stability of BHS-CrN2. After ab initio molecular dynamics simulation, the supercell of BHS-CrN2 remains a complete structure, indicating its thermal stability. The calculated elastic moduli satisfy the Born–Huang criterion, indicating that the BHS-CrN2 system has good mechanical stability. Interestingly, the compressive strain and O atom doping can transform the electronic structure of BHS-CrN2 from a semiconductor to a half-metal, and the Curie temperature of BHS-CrN2 can be further increased to 1059 K when a 5% tensile strain is applied. Furthermore, the BHS-CrN2 in the ferromagnetic state shows a significant in-plane magnetic anisotropy energy of 0.01 meV per Cr, and the CrP2 and CrAs2 show a large out-of-plane magnetic anisotropy energy of 0.207 and 0.988 meV per Cr, respectively. The results show that the intrinsic ferromagnetic semiconductor BHS-CrN2 has good stability, high Curie temperature, and tunable magnetic properties, which is a promising material for room-temperature spintronic devices. [ABSTRACT FROM AUTHOR]

The recently proposed concept of electric chiral magnonic resonator (ECMR) has been extended to include usage of spin–orbit torques (SOT). Unlike the original version of ECMR which was based on voltage controlled magnetic anisotropy (VCMA), the spin wave amplification power by this new version of ECMR (pumped by SOT) no longer depends on the phase of the incident wave, which is highly desirable from an application point of view. The performance of the SOT pumped ECMR has been compared with the case of amplification by applying SOT pumping directly to a waveguide (without any ECMR involved). It is argued that at the expense of narrowing the bandwidth (i.e., slower amplifier response), the advantage of the former configuration (amplification by a SOT pumped ECMR) over the latter (amplification by direct SOT pumping the waveguide) is to offer gain, while at the same time, maintaining system stability (avoidance of auto-oscillations). Non-linear behavior of the SOT pumped ECMR has been analyzed. It is demonstrated that by cascading a SOT ECMR operating in an off-resonance mode together with a VCMA biased passive ECMR, it is possible to produce a magnonic neuron with a transmitted signal magnitude larger than the input in the firing state. [ABSTRACT FROM AUTHOR]

By using first-principles calculations and micromagnetic simulations, we investigate the electronic structure, magnetic properties, and skyrmions in two-dimensional Janus Cr 2 XYTe 6 (X,Y = Si, Ge, Sn, X ≠ Y) monolayers. Our findings reveal that the Cr 2 XYTe 6 monolayers are ferromagnetic semiconductors with a high Curie temperature (T c). The bandgap and T c can be further increased by applying tensile strain. In addition, there is a transition from the ferromagnetic to the antiferromagnetic state at a compressive strain. Both Cr 2 SiSnTe 6 and Cr 2 SiGeTe 6 exhibit a large magnetic anisotropy energy, which are mainly associated with the significant spin–orbit coupling of the nonmagnetic Te atoms rather than that of the magnetic Cr atoms. Interestingly, the Cr 2 SiSnTe 6 monolayer exhibits a significant Dzyaloshinskii–Moriya interaction of 1.12 meV, which facilitates the formation of chiral domain walls and skyrmions. Furthermore, under tensile strain, chiral DWs can be transformed into skyrmions if applying an external magnetic field. These findings suggest that Janus Cr 2 XYTe 6 monolayers hold promise for spintronic nanodevice applications. [ABSTRACT FROM AUTHOR]

There exists a controversy in the literature concerning the values of coercive and bias fields in antidots magnetic structures formed by a hexagonal network of nanoholes. The coercive fields (H C) and the exchange bias fields (∣ H E X C ∣) for antidots (deposited on ultrathin anodic aluminum oxide, namely, AAO) are either increased or diminished by comparison with the same magnetic nanostructures grown on continuous substrates (namely, CML). We propose to elucidate these debates by showing the importance of the easy axis of the magnetization, the direction of the applied magnetic field, the thicknesses of the layers, and the 3D-topology of nanoholes, as well as the magnetic and thermal history of the magnetic measurements. Here, biased Ta(5 nm)/Pt(5 nm)/Co(0.6 nm)/Fe 50 Mn 50 (X)/Ta(5 nm) antidots are investigated by extraordinary Hall effect measurements at 5 K, where X varies in the (0–5.5) nm range. The substrate consists in a hexagonal array of holes, described by the pair of (p , d) values, respectively, the period as the distance from center to center of two consecutive holes and the hole diameter. The dimensions of antidots are (p ≈ 100 and d ≈ 40 nm) for X = (2–5.5) nm, (p ≈ 150 and d ≈ 60 nm) for X = 3.5 nm, and (p ≈ 100 and d ≈ 60 nm) for X = 0. A continuous stack using Si/SiO 2 (100 nm) is used for comparison. H C and ∣ H E X C ∣ gradually increase when X is enhanced for both substrates, with nevertheless a weak decrease at high X for the continuous system. Perpendicular magnetic anisotropy is only observed for both unbiased samples, the X = 2 nm continuous sample, and both X = 5 nm samples that have undergone field cooling treatment from 500 to 5 K under − 2 T. Usually, H C (AAO) > --> H C (CML), ∣ H E X C (AAO) ∣ > -->∣ H E X C (CML) ∣ , and ∣ H A (AAO) ∣ <∣ H A (CML) ∣ (H A designating the anisotropy field). However, for certain conditions, as, for instance, for FC-procedures starting from high temperatures and/or strong magnetic field, other situations might be observed. A discussion pertaining to the amplitudes of H C , ∣ H E X C ∣ and the anisotropy field (∣ H A ∣) of continuous and discontinuous samples is given for our experimental results as well as for published data in the literature, in the light of structural characteristics (wedge-to-wedge distance, porosity, or coverage ratio). Such biased perpendicular antidots might be particularly used in specific nanomaterials devoted to spintronics. [ABSTRACT FROM AUTHOR]

Realization of microwave-absorbing materials with "small thickness, light weight, broad bandwidth, and low reflectivity" is an invariable topic. In this paper, Sm2Fe14BHx/polyurethane (SFBH/PU) composites with planar anisotropy were prepared by reduction–diffusion (R/D) and water bath hydrogenation (WBH) process. A minimum reflection loss (RL) value reaches −59.7 dB at the perfect matching frequency of 13.79 GHz with a thickness of only 1.035 mm. Compared with unhydrogenated SFB, the bandwidth and reflectivity are significantly improved. It is mainly attributed to the fact that introduction of hydrogen atoms effectively modulates the electromagnetic parameters and increases the Snoek limit ((μ i − 1) f r) , which leads to the improvement of the high-frequency microwave absorption performance. In addition, the bandwidth equation is derived and simplified from the perspective of the reflected wave at the interface, which is in good agreement with the measured results. [ABSTRACT FROM AUTHOR]

The effect of changing magnetic parameters on the size and density of skyrmions in a hexagonal lattice is investigated using micromagnetic simulations. Achieving control of the skyrmion density, for instance, by applied voltages, is a route to magnetic neuromorphic computing devices. Here, we show how small changes in the uniaxial magnetic anisotropy and Dzyaloshinskii–Moriya interaction lead to large changes in the skyrmion size and density, which occurs for parameters that do not support isolated skyrmions. The effect of a grain structure on the density of skyrmions is modeled through the introduction of a locally varying anisotropy. This shows that a higher density of skyrmions is favored for a wider distribution of magnetic anisotropy. The results provide a clear understanding of systems where the skyrmion density can be externally controlled and assist the design of functional skyrmion-based devices. [ABSTRACT FROM AUTHOR]

Magnetic garnet thin films exhibiting perpendicular magnetic anisotropy (PMA) and ultra-low damping have recently been explored for applications in magnonics and spintronics. Here, we present a systematic study of PMA and magnetic damping in bismuth-substituted yttrium iron garnet (Bi-YIG) films grown on sGGG (111) substrates by pulsed laser deposition. Films with thicknesses ranging from 5 to 160 nm are investigated. Structural characterization using x-ray diffraction and reciprocal space mapping demonstrates the pseudomorphic growth of the films. The films exhibit perpendicular magnetic anisotropy up to 160 nm thickness, with the zero-magnetic field state changing from fully saturated for low thicknesses to a dense magnetic stripe pattern for thicker films. The films show a ferromagnetic resonance (FMR) linewidth of 100–200 MHz with a Gilbert damping constant of the order of 4 × 10 − 3 . The broad FMR linewidth is caused by inhomogeneities of magnetic properties on micrometer length scales. [ABSTRACT FROM AUTHOR]

In this work, we have performed a first-order reversal curve study of the magnetization process of a top-pinned spin valve when a Pt/Co multilayer with perpendicular to plane anisotropy is deposited on top of the structure, near the pinned layer. We find that the magnetostatic interaction with the Pt/Co multilayer largely alters the magnetization process of both the pinned and the free layer of the spin valve, giving their magnetization a perpendicular-to-plane component, although some areas remain pinned in the plane. With this complex multilayer set, we fabricated nanostrips using a patterned Pt/Co multilayer on top of the spin valve as a pinning point for the magnetic domain wall traveling through the free layer. The Pt/Co feature on top of the spin valve strip pins the domain wall, although only in the return branch of the free layer magnetoresistance loop. The transport measurements show that the associated depinning field of the Pt/Co pinning feature is relatively weak. Nevertheless, the strong influence of the Pt/Co multilayer on the spin valve, visible in the magnetic characterization, indicates that this type of pinning defect may well be a good alternative in some spintronic devices, where the application requires adjusting the pinning strength of the local defects. [ABSTRACT FROM AUTHOR]

Using a molecular beam epitaxy technique, we experimentally demonstrate a multiferroic heterostructure consisting of metastable ferromagnetic Co 3 Mn on piezoelectric Pb(Mg 1 / 3 Nb 2 / 3 )O 3 –PbTiO 3 (PMN-PT). Inserting a 2-nm-thick Fe layer between Co 3 Mn and PMN-PT(001) allows the formation of bcc Co 3 Mn layers even at an extremely low growth temperature of ∼ 80 ° C. Upon increasing this temperature to 200 ° C, a bcc Co 3 Mn/Fe/PMN-PT(001) multiferroic heterostructure with a relatively large saturation magnetization of ∼ 1680 kA/m and an atomically flat interface is obtained, resulting in an obvious converse magnetoelectric (CME) effect. The large CME effect originates mainly from the strain-induced modulation of the magnetic anisotropy energy, supported by the first-principles calculations. [ABSTRACT FROM AUTHOR]

Photonic spin–orbit (SO) coupling is an important physical mechanism leading to numerous interesting phenomena in the systems of microcavity photons and exciton-polaritons. We report the effect of SO coupling in a tunable open-access microcavity embedded with anisotropic active media. The SO coupling associated with the TE–TM splitting results in an emergent anisotropy, which further leads to fine energy splittings allowing clear observation of the full set of eigenstates, in sharp contrast with the isotropic situation which leads to the isotropic eigenstates of spin vortices. We show that the photonic potential can be engineered by playing with the relation between the emergent anisotropy and the cavity ellipticity. All the experimental results are well reproduced by the degenerate perturbation theory. Our results constitute a significant extension to the research field of microcavity spinoptronics, with potential applications in polarization control and optical property measurement of photonic devices and materials. [ABSTRACT FROM AUTHOR]

Two-dimensional ferromagnetic materials hold great promise to develop energy-efficient magnetoelectric memory devices and next-generation spintronics. However, one of the crucial challenges for these materials is the realization of tunable magnetocrystalline anisotropy (MCA) to balance thermal stability and energy efficiency. Here, we systematically study the adsorption effects of 3d transition metals (3d-TMs) on the electronic structure and magnetic property of the Fe3GeTe2 (FGT) monolayer. The adsorption systems exhibit different ground state configurations depending on the adatoms, while the controlled perpendicular magnetic anisotropy has also been achieved. Notably, the Mn/FGT system can maintain the out-of-plane magnetic orientation with a changing amplitude of MCA energy up to 3.057 erg/cm2 as the external strain varies from −4% to 1%. In contrast, the Fe/FGT structure undergoes spin reorientation from in-plane to out-of-plan magnetization with a distinct modification behavior of MCA. We elucidate that the underlying atomistic mechanism mainly arises from the alteration of Fe-derived 3d-orbital states in response to the strain effect, leading to competitive changes in the different coupling states. These findings can not only provide useful guidance to optimize two-dimensional magnets for fundamental research but also reveal the promising potential of TMs/FGT materials for the development of ultra-low energy spintronic devices. [ABSTRACT FROM AUTHOR]

Ferrimagnetic antiperovskite Mn 4 N has received growing interest due to room-temperature observation of large perpendicular magnetic anisotropy, low saturation magnetization, and ultrafast response to external magnetic fields. Comprehensive understanding of the underlying magnetic structure is instrumental in design and fabrication of computer memory and logic devices. Magneto-optical spectroscopy provides deeper insight into the magnetic and electronic structure than magnetometry. Simulations of a magneto-optical Kerr effect in biaxially strained Mn 4 N are performed using density functional theory and linear response theory. We consider three ferrimagnetic phases, two collinear and one noncollinear, which have been investigated separately by earlier studies. The simulated spectra are compared to measured magneto-optical data available in recent literature. One of the collinear ferrimagnetic phases is found to be consistent with the measured spectra. We show that an admixture of the noncollinear phase, which is the ground state of unstrained Mn 4 N, further improves the agreement with measured spectra, and at the same time, it could explain the lower than predicted net moment and magnetic anisotropy observed in thin films on various substrates. [ABSTRACT FROM AUTHOR]

Understanding the magnetic states and their dynamics in patterned ferromagnetic materials is of great importance for ultrahigh-density recording from the viewpoints of both fundamental research and practical applications. However, reliable access to magnetization dynamics in magnetic materials and devices on the technologically highly relevant terahertz range remains challenging. Currently, there is a lack of reports on terahertz magnetic susceptibility. Here, through micromagnetic simulations, we study the dynamics of pyramid-shaped, isolated magnetic nanodots and their arrays made of L10-FePt with high magnetocrystalline anisotropy. Numerical results reveal a significant magnetic response of isolated pyramid nanodots in the terahertz range. Specifically, two resonant modes, namely, a bulk mode and an edge mode, have been identified. For the lateral size above ∼100 nm, the nanodot's bulk mode splits and higher-order modes appear. Furthermore, the calculated spatial Fourier amplitude of resonant modes of nanopyramid arrays exhibits the dependence of lateral size and inter-dot spacing. These findings are expected to open up a promising route to terahertz spintronics utilizing magnetic nanostructures. [ABSTRACT FROM AUTHOR]

The magnetocrystalline anisotropy energy of atomically ordered L10 FeNi (the meteoritic mineral tetrataenite) is studied within a first-principles electronic structure framework. Two compositions are examined: equiatomic Fe 0.5 Ni 0.5 and an Fe-rich composition, Fe 0.56 Ni 0.44 . It is confirmed that, for the single crystals modeled in this work, the leading-order anisotropy coefficient K 1 dominates the higher-order coefficients K 2 and K 3. To enable comparison with experiment, the effects of both imperfect atomic long-range order and finite temperature are included. While our computational results initially appear to undershoot the measured experimental values for this system, careful scrutiny of the original analysis due to Néel et al. [J. Appl. Phys. 35, 873 (1964)] suggests that our computed value of K 1 is, in fact, consistent with experimental values, and that the noted discrepancy has its origins in the nanoscale polycrystalline, multivariant nature of experimental samples, that yields much larger values of K 2 and K 3 than expected a priori. These results provide fresh insight into the existing discrepancies in the literature regarding the value of tetrataenite's uniaxial magnetocrystalline anisotropy in both natural and synthetic samples. [ABSTRACT FROM AUTHOR]

H−T phase diagrams for chromium oxide chloride (CrOCl) are usually obtained using data from the measurements of magnetization and specific heats. Recent works suggest that magnetic anisotropy exists in CrOCl. In this work, we use dynamic cantilever magnetometry, which is sensitive to both magnetization and magnetic anisotropy, to probe phase transitions in CrOCl flakes. Together with magnetization measurements from a Superconducting Quantum Interference Device, four major regions of the CrOCl H−T phase diagram along its c-axis are obtained, which is consistent with the previously reported works. Then, we studied magnetic field induced transitions in CrOCl flakes under four different temperatures. Several transitions in antiferromagnetic state and in incommensurate state, which have not been reported before, were recognized. We believe these transitions probably originate from magnetic anisotropy due to magnetoelastic coupling and lattice reconstruction in CrOCl. Our work provides intriguing experimental results on the intricate magnetic structure of CrOCl, making progress in understanding the rich magnetic states of CrOCl. [ABSTRACT FROM AUTHOR]

We numerically demonstrate that a pure time-harmonic bias AC current of a specific amplitude τ f and angular frequency ω f can excite the chaotic magnetization dynamics in a Josephson-like antiferromagnetic (AFM) spin Hall oscillator (SHO) with biaxial magnetic anisotropy of an AFM layer. The nature of such a stochastic generation regime in a Josephson-like AFM SHO could be explained by the random hopping of the working point of the SHO between several quasi-stable states under the action of an applied AC current. We reveal that depending on the ω f / τ f ratio several stochastic generation regimes interspersed with regular generation regimes can be achieved in an AFM SHO, which can be used in spintronic random signal sources and various nano-scale random signal devices, including the spintronic p-bit device considered in this work. The obtained results are important for the development and optimization of spintronic devices capable of generating and processing (sub-)THz-frequency random signals, which are promising for ultra-fast probabilistic computing, cryptography, secure communication, etc. [ABSTRACT FROM AUTHOR]

L10-MnAl exhibits excellent magnetic properties and could be used as a candidate to fill the gap between hard ferrite and rare-earth based permanent magnet (PM) applications. However, one of the major problems with L10-MnAl is that the structure is metastable and decomposes to other structural phases at higher temperature. Therefore, enhancing the structure stability of L10-MnAl is essential for PM applications. We studied the prospect of improving the structural stability and increasing the uniaxial magnetic anisotropy energy (K u) of the L10-MnAl structure in this work. It is found that C-doping at the 1d interstitial site enhanced the structure stability of the compound. Moreover, Fe substitution on Mn sites shows a significant increase in the uniaxial magnetic anisotropy energy (K u). Therefore, the electronic structure and magnetic properties of L10-ordered Mn1−xFexAlC (x = 0, 0.125, 0.250, 0.375, 0.50, 0.625, 0.75, and 0.87) alloys are investigated by using the first-principles calculations. The results show that x = 0.375 Fe content in the L10-MnAl alloy and 6% doping of C maintained the structural stability and provided a maximum value of K u = 2.13 (MJ/m3), which is 25% higher than for the pristine L10-MnAl, making it suitable for permanent magnet applications. [ABSTRACT FROM AUTHOR]

Reliability and packing density concerns are the two major shortcomings of spin transfer torque and spin orbit torque based magnetic memory, respectively. Voltage controlled magnetic anisotropy (VCMA) becomes energy efficient and fast, showing transcendence for the writing mechanism in the magnetic tunnel junction. Deterministic switching cannot be achieved by VCMA alone in the out of plane nanomagnet. It requires an external in-plane magnetic field, but the use of an external field is inconvenient for on-chip applications. We exploit stress and exchange bias provided by an antiferromagnetic material to mitigate the external magnetic field requisite. We perform macro-spin simulations using the Landau–Lifshitz–Gilbert equation at room temperature. We use the VCMA effect cum stress effect to investigate field free switching performance, and this improves the write error rate (WER) to 5 × 10 − 5 against WER of 0.1 with the VCMA effect alone. We studied the effects of applied voltage (amplitude and pulse width), exchange bias field, and VCMA coefficient on the switching performance in detail. This proposed two-terminal device can be helpful in achieving high cell density to implement nonvolatile magnetic memory. [ABSTRACT FROM AUTHOR]

Optoelectronic functional materials with flexible and in-plane anisotropic properties has been a significant development direction of nanotechnology due to wearable and polarized optoelectronic applications. Herein, the elasticity, global band dispersion, optical dielectric properties of environmentally friendly IVB-VIA layered transition metal trichalcogenides (MX3, M = Zr, Hf; X = S, Se) are investigated systematically by density functional theory with different kinds of van der Waals correction and hybrid functional. The low elastic modulus suggests that they are appropriate for the design of flexible optoelectronic devices. Originating from the effect of d states of chalcogens and s states of transition metals, the dispersion of the valence band edge of monolayer MX3 shows that the effective mass of carriers along the wave vector kx is much heavier than that of carriers along the wave vector ky. This means that the mobility of carriers exhibits obvious in-plane anisotropy. Meanwhile, the optical dielectric properties of monolayer MX3 as well as absorbed photon flux (Jabs) of the related heterostructures display noteworthy in-plane anisotropy in the visible-IR region. The ratio of Jabs from different direction reaches up to 1.7. This work could not only promote understanding of rich photophyiscal properties of transition metal trichalcogenides, but also provide a theoretical reference for the invention of high-performance optoelectronic devices with high flexibility and anisotropy. [ABSTRACT FROM AUTHOR]

By now, it is well known that chiral molecules can affect the spin of electrons passing through. In addition, the magnetization of, e.g., nanomagnets covered by chiral molecules can be affected by the presence of molecules. We are studying the mechanisms that explain various observations involving combinations of magnets and chiral molecules. We find that there exists a molecule induced contribution to the magnetic anisotropy of the magnets. Out of equilibrium, when electrons are actually being transported through a nano-magnet covered with chiral molecules, a molecule induced torque acting on the magnetization is emerging. It is of the spin-transfer-torque kind, already discussed in other parts of spintronics. This current induced torque can help explain the observed breaking of the Onsager reciprocity principle in experiments involving magnets and chiral molecules. [ABSTRACT FROM AUTHOR]

We demonstrate the possibility of a coupling between the magnetization direction of a ferromagnet and the tilting angle of adsorbed achiral molecules. To illustrate the mechanism of the coupling, we analyze a minimal Stoner model that includes Rashba spin–orbit coupling due to the electric field on the surface of the ferromagnet. The proposed mechanism allows us to study magnetic anisotropy of the system with an extended Stoner–Wohlfarth model and argue that adsorbed achiral molecules can change magnetocrystalline anisotropy of the substrate. Our research aims to motivate further experimental studies of the current-free chirality induced spin selectivity effect involving both enantiomers. [ABSTRACT FROM AUTHOR]

The magnetic, elastic, and dynamical properties of L10-type FePt alloy are investigated under high pressure using first-principles calculations. The critical pressure of ferromagnetism collapse is identified as 96.7 GPa, and the alloy exhibits mechanical stability over the studied pressure range up to 120 GPa. Below the critical pressure, ductility hardly changes with pressure, and the elastic anisotropy is enhanced by pressure. The ductility and elastic anisotropy of the system show a sudden decrease beyond the critical pressure. Dynamical stabilities under ambient and high pressures are verified by phonon spectra. The alloy is dynamically stable before the critical pressure of 96.7 GPa due to spontaneous magnetization. Finally, the anisotropy of phonon density of states under high pressure is evaluated in detail, and the result indicates that the degree of anisotropy is almost independent of pressure. [ABSTRACT FROM AUTHOR]

A domain wall based spin torque nano-oscillator is a potential device for microwave generation because of its tunability of frequency, operation at room temperature, and integration with complementary metal–oxide–semiconductors. Here, we proposed and numerically demonstrated a spin nano-oscillator with domain wall steady oscillation in Z-type magnetic nanowires with perpendicular magnetic anisotropy by micromagnetic simulations. We find that the dynamical behavior of domain walls at Z-junctions is highly affected by the dimension of Z-junctions and current density. Three kinds of behaviors are found, i.e., damped oscillation, steady oscillation, and collapse. The observed steady oscillation can be used as spin torque nano-oscillators with a working frequency can approach 20 GHz. Our findings could enrich the investigation of spin torque nano-oscillators at high frequencies for novel microwave emitters. [ABSTRACT FROM AUTHOR]