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Extensive ab initio density functional theory molecular dynamics calculations were used to evaluate stability conditions for relevant phases of InN. In particular, the p-T conditions of the thermal decomposition of InN and pressure-induced wurtzite–rocksalt solid–solid phase transition were established. The comparison of the simulation results with the available experimental data allowed for a critical evaluation of the capabilities and limitations of the proposed simulation method. It is shown that ab initio molecular dynamics can be used as an efficient tool for simulations of phase transformations of InN, including solid–solid structural transition and thermal decomposition with formation of N2 molecules. It is of high interest, because InN is an important component of epitaxial quantum structures, but it has not been obtained as a bulk single crystal. This makes it difficult to determine its basic physical properties to develop new applications. [ABSTRACT FROM AUTHOR]

Advanced lithium‐ion batteries (LIBs) are crucial to portable devices and electric vehicles. However, it is still challenging to further develop the current anodic materials such as graphite due to the intrinsic limited capacity and sluggish Li‐ion diffusion. Indium nitride (InN), which is a new type of anodic material with low redox potential (<0.7 V vs Li/Li+) and narrow bandgap (0.69 eV), may serve as a new high‐energy density anode material for LIBs. Here, the growth of 1D single crystalline InN nanowires is reported on Au‐decorated carbon fibers (InN/Au‐CFs) via chemical vapor deposition, possessing a high aspect ratio of 400. The binder‐free Au‐CFs with high conductivity can provide abundant sites and enhance binding force for the dense growth of InN nanowires, displaying shortened Li ion diffusion paths, high structural stability, and fast Li+ kinetics. The InN/Au‐CFs can offer stable and high‐rate Li delithiation/lithiation without Li deposition, and achieve a remarkable capacity of 632.5 mAh g−1 at 0.1 A g−1 after 450 cycles and 416 mAh g−1 at a high rate of 30 A g−1. The InN nanowires as battery anodes shall hold substantial promise for fulfilling superior long‐term cycling performance and high‐rate capability for advanced LIBs. [ABSTRACT FROM AUTHOR]

Indium nitride is an excellent semiconductor that belongs to the group of III nitride materials. Due to its unique properties, it is applied to various optoelectronic applications. However, its low thermal stability makes it difficult to synthesize. The present study introduces the synthesis of indium nitride nanoparticles, using ultrasound power (sonochemistry). The sonochemical method provides a low-cost and rapid technique for nanomaterial synthesis. InN nanoparticles were produced in only 3 h through the sonochemical reaction of InCl3 and LiN3. Xylene was used as a reaction solvent. X-ray powder diffraction (XRD) as well as high-resolution transmission electron microscopy (HRTEM) were adopted for the characterization of the obtained powder. According to our results, ultrasound contributed to the synthesis of InN nanocrystals in a cubic and a hexagonal phase. The obtained InN nanoparticles were further used to decorate titanium dioxide (TiO2) by means of ultrasound. The contribution of InN nanoparticles on the processes of photocatalysis was investigated through the degradation of methylene blue (MB), a typical organic substance acting in place of an environment pollutant. According to the obtained results, InN nanoparticles improved the photocatalytic activity of TiO2 by 41.8% compared with commercial micrometric titania. [ABSTRACT FROM AUTHOR]

Indium nitride (InN) is an interesting material for future electronic and photonic-related applications, as it combines high electron mobility and low-energy band gap for photoabsorption or emission-driven processes. In this context, atomic layer deposition techniques have been previously employed for InN growth at low temperatures (typically <350 °C), reportedly yielding crystals with high quality and purity. In general, this technique is assumed to not involve any gas phase reactions as a result from the time-resolved insertion of volatile molecular sources into the gas chamber. Nonetheless, such temperatures could still favor the precursor decomposition in the gas phase during the In half-cycle, therefore altering the molecular species that undergoes physisorption and, ultimately, driving the reaction mechanism to pursue other pathways. Thence, we herein evaluate the thermal decomposition of relevant In precursors in the gas phase, namely, trimethylindium (TMI) and tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) indium (III) (ITG), by means of thermodynamic and kinetic modeling. According to the results, at T = 593 K, TMI should exhibit partial decomposition of ∼8% after 400 s to first generate methylindium and ethane (C2H6), a percentage that increases to ∼34% after 1 h of exposure inside the gas chamber. Therefore, this precursor should be present in an intact form to undergo physisorption during the In half-cycle of the deposition (<10 s). On the other hand, the ITG decomposition starts already at the temperatures used in the bubbler, in which it slowly decomposes as it is evaporated during the deposition process. At T = 300 °C, the decomposition is a fast process that reaches 90% completeness after 1 s and where equilibrium, at which almost no ITG remains, is achieved before 10 s. In this case, the decomposition pathway is likely to occur via elimination of the carbodiimide ligand. Ultimately, these results should contribute for a better understanding of the reaction mechanism involved in the InN growth from these precursors. [ABSTRACT FROM AUTHOR]

Indium nitride is an excellent semiconductor that belongs to the group of III nitride materials. Due to its unique properties, it is applied to various optoelectronic applications. However, its low thermal stability makes it difficult to synthesize. The present study introduces the synthesis of indium nitride nanoparticles, using ultrasound power (sonochemistry). The sonochemical method provides a low-cost and rapid technique for nanomaterial synthesis. InN nanoparticles were produced in only 3 h through the sonochemical reaction of InCl3 and LiN3. Xylene was used as a reaction solvent. X-ray powder diffraction (XRD) as well as high-resolution transmission electron microscopy (HRTEM) were adopted for the characterization of the obtained powder. According to our results, ultrasound contributed to the synthesis of InN nanocrystals in a cubic and a hexagonal phase. The obtained InN nanoparticles were further used to decorate titanium dioxide (TiO2) by means of ultrasound. The contribution of InN nanoparticles on the processes of photocatalysis was investigated through the degradation of methylene blue (MB), a typical organic substance acting in place of an environment pollutant. According to the obtained results, InN nanoparticles improved the photocatalytic activity of TiO2 by 41.8% compared with commercial micrometric titania.

In recent years, tubular nanostructures have been related to immense advances in various fields of science and technology. Considerable research efforts have been centred on the theoretical prediction and manufacturing of non-carbon nanotubes (NTs), which meet modern requirements for the development of novel devices and systems. In this context, diatomic inorganic nanotubes formed by atoms of elements from the 13th group of the periodic table (B, Al, Ga, In, Tl) and nitrogen (N) have received much research attention. In this study, the elastic properties of single-walled boron nitride, aluminium nitride, gallium nitride, indium nitride, and thallium nitride nanotubes were assessed numerically using the nanoscale continuum modelling approach (also called molecular structural mechanics). The elastic properties (rigidities, surface Young's and shear moduli, and Poisson's ratio) of nitride nanotubes are discussed with respect to the bond length of the corresponding diatomic hexagonal lattice. The results obtained contribute to a better understanding of the mechanical response of nitride compound-based nanotubes, covering a broad range, from the well-studied boron nitride NTs to the hypothetical thallium nitride NTs. [ABSTRACT FROM AUTHOR]

This Review provides a thorough description of the experimental progress on the InN family and other relevant compounds. Although InN is of great interest, many of its properties are not well understood and are still puzzling researchers with a number of unexpected effects. These include a surprisingly small energy gap, sensitivity to applied pressure in terms of lattice stability, and poor miscibility with compounds with smaller lattice parameters, such as GaN and AlN. Special features of InN under pressure are highlighted, such as the effect of conduction band filling and the strong pressure dependence of the effective mass. Several negative and positive effects due to the presence of In have been observed. We highlight their implications for InN-based alloys and quantum structures, which are crucial materials in modern optoelectronics (light emitting diodes and laser diodes). These effects include In clustering, large piezoelectricity resulting in strong internal electric fields that reduce the optical gain in nitride heterostructures, and difficulties in growing high-In superlattices and other quantum structures. All of these effects pose challenges that need to be addressed. We show that theoretical explanations allow for the clarification of puzzling experimental observations. Discussed are (i) a reformulation of the rule describing the bandgap dependence on pressure in all III–V semiconductors; (ii) the very large bandgap curvatures in nitride alloys; and (iii) the discrepancies between theory and experiment in the optical emission from InN/GaN superlattices, leading to the conclusion that epitaxial growth of high In content InxGa1−xN (x > 0.3) quantum wells on GaN is not possible. [ABSTRACT FROM AUTHOR]

Highly indium-rich group-III nitrides are attracting attention for advancing our capacity to create highly effective optical emitters at extended visible/IR wavelengths or for enhancing bandgap engineering possibilities within the group-III nitride material framework. Current methods of synthesis are constrained in their efficacy, partially owing to the low decomposition temperature of indium nitride. Implementation of a new design of a vertical high-pressure spatial chemical vapor deposition (HPS-CVD) reactor with six separated precursor source zones and a rotating wafer carrier disk carrying four 2-inch wafers is proposed and analyzed using COMSOL Multiphysics as a commercial computational fluid dynamics (CFD) program to study the fluid phenomena inside the numerical domain. This study focuses on understanding the different flow patterns within the chambers at super-atmospheric conditions (5 atm to 30 atm) and identifying suitable operating conditions under which smooth and dominant vortex-free flow is achieved. Four 2-inch wafers are heated to maintain a temperature of 1200–1300 K at each pressure and gas type. Three different gas types (nitrogen, hydrogen, and ammonia) are used, and the impacts of different inlet flow velocities and rotational speeds are investigated and discussed. An operating matrix is presented for each analyzed system pressure providing suitable combinations of these operational variables for smooth flow in the chambers. Each gas type was identified to have a range of suitable rotational and inlet velocity regimes at each operating pressure. Overlap of these three gas-specific operating condition windows resulted in the identification of a generally suitable operating condition for smooth flow patterns in the system regardless of the gas type used, as required for the growth of group-III nitride materials. [ABSTRACT FROM AUTHOR]

This theoretical study focuses on the performance of the surface plasmon resonance (SPR) sensor by strategically including various heterostructures in between the plasmonic metal and sensing medium. The heterostructure consists of a wurtzite nitride semiconductor and a two-dimensional (2D) material, specifically transition-metal dichalcogenides (TMDC). The angular interrogation approach is used to assess the sensor's efficacy which includes all commonly used critical parameters. The study also outlines the range of refractive indices (RI) in the sensing medium that elicit exceptional and notable responses from the proposed SPR structure. Based on the sensitivity, detection accuracy (DA), and figure of merit (FOM) values, it is determined that a TMDC material, specifically tungsten disulfide (WS2), combined with a wurtzite nitride semiconductor (such as gallium nitride, indium nitride, or aluminum nitride), offers the best performance. Among all heterostructures, GaN-WS2 exhibits the highest sensitivity. In contrast, AlN-WS2 exhibits remarkable performance in terms of DA, FOM, and the evanescent field intensity factor. Furthermore, the proposed SPR structure with InN-WS2 demonstrates maximum shifts in resonance angle, occurring within sensing RI range of 1.372 to 1.389. Similarly, AlN-WS2 exhibits the maximum shifts in resonance angle within the range from 1.387 to 1.4. GaN-WS2, however, shows the strongest response to resonance angle shifts within the range from 1.38 to 1.396. [ABSTRACT FROM AUTHOR]

In this work, we study the pressure dependence of elastic constants of wurtzite indium nitride semiconductor based on Landau free energy expansion. Elastic constants are obtained as functions pressure up to second order. We have also evaluated the bulk modulus (B) and anisotropies of compressibility and shear for wurtzite indium nitride as functions of pressure. Agreement with previously obtained results based on first-principles calculations is found to be satisfactory. [ABSTRACT FROM AUTHOR]

High indium-content group-III nitrides are of interest to further expand upon our ability to produce highly efficient optical emitters at longer visible/IR wavelengths or to broaden bandgap engineering opportunities in the group-III nitride material system. Current synthesis approaches are limited in their capabilities, in part due to the low decomposition temperature of indium nitride. A new high-pressure spatial chemical vapor deposition (HPS-CVD) has been proposed which can operate at pressures up to 100 atmospheres, thereby significantly raising the growth temperature of indium nitride more than 100 kelvins and permitting the investigation of the impact of pressure on precursor stability and reactivity. This study systematically analyzes an HPS-CVD reactor design using computational fluid dynamic modeling in order to understand favorable operating conditions for growth of group III nitrides. Specifically, the relationship between inlet gas type (nitrogen, hydrogen, or ammonia), inlet gas velocity, gas flow rate, and rotational speed of the wafer carrier is evaluated for conditions under which a smooth and dominant vortex-free flow are obtained over the wafer. Heater power was varied to maintain a wafer temperature of 1250–1300 K. Favorable operating conditions were identified that were simultaneously met for all three gas types, providing a stable operating window for a wide range of gas chemistries for growth; at one atmosphere, a disk rotational speed of 50 rpm and a flow rate of 12 slm for all gas types is desired. [ABSTRACT FROM AUTHOR]

The demand for highly sensitive and selective gas sensors has been steadily increasing, driven by applications in various fields such as environmental monitoring, healthcare, and industrial safety. In this context, ternary alloy indium aluminum nitride (InAlN) semiconductors have emerged as a promising material for gas sensing due to their unique properties and tunable material characteristics. This work focuses on the fabrication and characterization of InAlN nanorods grown on sapphire substrates using an ultra-high vacuum magnetron sputter epitaxy with precise control over indium composition and explores their potential for acetone-gas-sensing applications. Various characterization techniques, including XRD, SEM, and TEM, demonstrate the structural and morphological insights of InAlN nanorods, making them suitable for gas-sensing applications. To evaluate the gas-sensing performance of the InAlN nanorods, acetone was chosen as a target analyte due to its relevance in medical diagnostics and industrial processes. The results reveal that the InAlN nanorods exhibit a remarkable sensor response of 2.33% at 600 ppm acetone gas concentration at an operating temperature of 350 °C, with a rapid response time of 18 s. Their high sensor response and rapid response make InAlN a viable candidate for use in medical diagnostics, industrial safety, and environmental monitoring. [ABSTRACT FROM AUTHOR]

On the basis of the improved Stillinger–Weber potential model, the growth process of an indium nitride (InN) film on a gallium nitride (GaN) substrate has been simulated by molecular dynamics. The effects of growth conditions, including the incident energy, polarity of the surface of the GaN substrate, substrate temperature, and deposited N:In atomic ratio, on the surface quality of the InN film have been investigated. We find that atoms with high incident energy have high mobility, which significantly improves the structures of the protrusions and pits on the surface of the film, thereby enhancing the surface quality. However, too high incident energy enhances the sputtering effect of the deposited particles on the surface atoms of the substrate and the destruction of the film, thereby reducing the density. On the basis of the optimal incident energy, the difference in the growth mode of InN films on the Ga-termination polarity surface and N-termination polarity surface is analyzed. At low temperatures, a three-dimensional island growth mode is present on the N-termination polarity surface and a two-dimensional layer growth mode is present on the Ga-termination polarity surface. It is easier to produce InN films with excellent surface quality on the Ga-termination polarity at low temperatures. Furthermore, according to the results obtained under different substrate temperatures and atomic deposition ratios, in an In-enriched environment, excessive In atoms are prone to form agglomerated island structures on the film surface, and the low-temperature substrate is more prone to produce an InN film with high surface quality. In an N-enriched environment, excessive N atoms combine with In atoms on the film surface to form a stepped island structure, and they are more prone to grow into an InN film with high surface quality on a high-temperature substrate. [ABSTRACT FROM AUTHOR]

Indium nitride (InN) is a promising photoelectrode material for photoelectrochemical (PEC) water splitting due to its strong light absorption capability, excellent electron mobility and direct band gap. However, the severe re-joining of the carrier in bulk or surface hinders the application of InN nanomaterials. Therefore, an InN nanorod/Ni(OH)2 heterojunction for PEC water splitting with enhanced interfacial charge transfer under a biased voltage was constructed first. In this case, the Ni(OH)2 catalyst not only has excellent electrocatalytic properties, but also can eliminate the surface state of the InN nanorods within a certain range. The improved InN/Ni(OH)2 photoelectrodes show that the photocurrent density of 4.43 mA cm−2, was 16 times higher than that of the pure InN nanorods (0.27 mA cm−2) at the same potential. Its applied bias photon-to-current efficiency (ABPE) at 0.92 V vs. Ag/AgCl was 6.92% with a 43-fold increase when compared to InN (0.16%). The work reported here, supplies practical and effective ideas to construct an InN-based nanorod heterojunction, thereby enhancing the redox reaction dynamics of the PEC water splitting in alkaline pH electrolyte. [ABSTRACT FROM AUTHOR]

Fiber optic surface plasmon resonance sensor prepared from indium tin oxide and indium nitride is presented experimentally. Influence of thicknesses of indium tin oxide and indium nitride on the sensitivity of the sensor has been thoroughly investigated using wavelength interrogation regime. Merely adding an overlayer of optimum thickness of indium nitride results in highest sensitivity of 40 nm thick indium tin oxide layer based surface plasmon resonance sensor. [ABSTRACT FROM AUTHOR]

Extensive ab initio density functional theory molecular dynamics calculations were used to evaluate stability conditions for relevant phases of InN. In particular, the p-T conditions of the thermal decomposition of InN and pressure-induced wurtzite–rocksalt solid–solid phase transition were established. The comparison of the simulation results with the available experimental data allowed for a critical evaluation of the capabilities and limitations of the proposed simulation method. It is shown that ab initio molecular dynamics can be used as an efficient tool for simulations of phase transformations of InN, including solid–solid structural transition and thermal decomposition with formation of N2 molecules. It is of high interest, because InN is an important component of epitaxial quantum structures, but it has not been obtained as a bulk single crystal. This makes it difficult to determine its basic physical properties to develop new applications.

Epitaxial nanometer-thin indium nitride (InN) films are considered promising active layers in various device applications but remain challenging to deposit. We compare the morphological evolution and characterizations of InN films with various growth conditions in chemical vapor deposition (CVD) by both a plasma atomic layer deposition (ALD) approach and a conventional metalorganic CVD approach. Our results show that a time-resolved precursor supply is highly beneficial for deposition of smooth and continuous InN nanometer-thin films. The time for purging the reactor between the precursor pulses and low deposition temperature are key factors to achieve homogeneous InN. The gas exchange dynamics of the reactor is further studied using computational fluid dynamics. According to our study, 320 °C is found to be the upper temperature where the dynamics of the deposition chemistry can be controlled to involve only surface reactions with surface species. The results highlight the promising role of the ALD technique in realizing electronic devices based on nanometer-thin InN layers. [ABSTRACT FROM AUTHOR]

Quantum photonic technologies, such as quantum key distribution, are already benefiting greatly from the rise of integrated photonics. However, the flexibility in design of these systems is often restricted by the properties of the integration material platforms. Here, we overcome this choice by using hybrid integration of ultra-low-loss silicon nitride waveguides with indium phosphide electro-optic modulators to produce high-performance quantum key distribution transceiver chips. Access to the best properties of both materials allows us to achieve active encoding and decoding of photonic qubits on-chip at GHz speeds and with sub-1% quantum bit error rates over long fibre distances. We demonstrate bidirectional secure bit rates of 1.82 Mbps over 10 dB channel attenuation and positive secure key rates out to 250 km of fibre. The results support the imminent utility of hybrid integration for quantum photonic circuits and the wider field of photonics. [ABSTRACT FROM AUTHOR]

A series of indium nitride (InN) thin films have been grown on sapphire substrates by molecular beam epitaxy (MBE) technology under different growth conditions of temperature and plasma power. Their structural, surface, and optical properties are studied by a variety of techniques of scanning electron microscopy, Hall effect, x-ray diffraction, photoluminescence (PL), Raman scattering, x-ray photoelectron spectroscopy (XPS), synchrotron radiation x-ray absorption near edge structure (XANES), and so on. The lower carrier concentration in InN can be obtained with a higher MBE growth temperature and a lower plasma power. As the plasma power increases, the PL peak energy is observed to shift toward the higher energy side and the Raman E2 (high) and A1 (LO) modes are shifted to the lower frequency. The residual compressive strain in epitaxial InN is relaxed. The lower plasma power and the higher growth temperature are preferred for the MBE growth of high-quality InN films. The influencing factors on the InN PL peak and band gap Eg have been revealed. It is evidenced that the InN PL peak and Eg can be shifted from high down to ∼0.65 eV with the carrier concentration down to low E19 cm−3 and the plasma power down to ∼80 W. Both the XPS and N K-edge XANES revealed the antisite defect of N on the In site, NIn. The XANES In L-edge measurements on the In L3-edge of InN films with various carrier concentrations has indicated the fourfold InN intermediate crystal structures. These obtained results are significant and useful to deepen the understanding and promote further investigation in InN and III-N materials. [ABSTRACT FROM AUTHOR]

Indium nitride nanostructures have been formed by atmospheric and sub-atmospheric pressure plasma nitridation of molten indium. By nitriding the molten indium metal layer with Ar-10%N2 atmospheric pressure plasma at 435 K, micrometer-sized particles (0.7–4 μm) made up by agglomeration of nanoparticles (5–50 nm) and a variety of nanostructures (nanowires, microrods, and hollow microtubes) with various diameters (60–700 nm) have been formed, as observed by scanning electron microscopy. Transmission electron microscope observations show that these structures are composed of wurtzite type indium nitride nanocrystals (5–20 nm). By nitriding the molten indium metal with N2 sub-atmospheric pressure plasma at 673 K, hexagonal crystallites having facets (40–200 nm) have been grown to pile up. It is found that high quality indium nitride crystallites of wurtzite type single crystals can be grown at a relatively low growth temperature of 673 K, as revealed by transmission electron microscopy and Raman spectroscopy. Based on the experimental results, the main active nitrogen species for indium nitride formation are assumed to be nitrogen atoms and formation mechanisms of indium nitride nanoparticles and nanowires have been discussed. [ABSTRACT FROM AUTHOR]

Tuning the thermoelectric efficiency of a material is a complicated task as it requires the control of interrelated parameters. In this respect, various methods have been suggested to enhance the figure of merit (ZT), including the utilization of low-dimensional systems. Motivated by the effect of strain on intrinsic properties of two-dimensional materials, we examine the thermoelectric response of monolayer indium nitride (h-InN) under low biaxial strain (± 1 %) by using ab initio methods together with solving Boltzmann transport equations for electrons and phonons. Our results indicate that among the critical parameters, while the Seebeck coefficient is not affected prominently, electrical conductivity can increase up to three times, and lattice thermal conductivity can decrease to half at − 1% strain where valence band convergence is achieved. This results in significant enhancement of ZT, especially for p-type h-InN, and it reaches 0.50 with achievable carrier concentrations (∼ 10 13 cm − 2 ) at room temperature. Thermoelectric efficiency further increases with elevated temperatures and rises up to 1.32 at 700 K, where the system remains to be dynamically stable, suggesting h-InN as a promising material for high-temperature thermoelectric applications. [ABSTRACT FROM AUTHOR]

The fabrication of high‐speed electronic and communication devices has rapidly grown the demand for high mobility semiconductors. However, their high cost and complex fabrication process make them less attractive for the consumer market and industrial applications. Indium nitride (InN) can be a potential candidate to fulfill industrial requirements due to simple and low‐cost fabrication process as well as unique electronic properties such as narrow direct bandgap and high electron mobility. In this work, 3 µm thick InN epilayer is grown on (0001) gallium nitride (GaN)/Sapphire template under In‐rich conditions with different In/N flux ratios by molecular beam epitaxy. The sharp InN/GaN interface monolayers with the In‐polar growth are observed, which assure the precise control of the growth parameters. The directly probed electron mobility of 3610 cm2 V‐1 s‐1 is measured with an unintentionally doped electron density of 2.24 × 1017 cm‐3. The screw dislocation and edge dislocation densities are calculated to be 2.56 × 108 and 0.92 × 1010 cm‐2, respectively. The step‐flow growth with the average surface roughness of 0.23 nm for 1 × 1 µm2 is confirmed. The high quality and high mobility InN film make it a potential candidate for high‐speed electronic/optoelectronic devices. [ABSTRACT FROM AUTHOR]

Subject and Purpose. The InN Gunn diode is known as the device capable of generating powerful oscillations atfrequencies above 300 GHz. A possible way for increasing both the microwave power and the cutoff frequency of the Gunn diode is to employ graded-gap semiconductors. The subject of this research is the process for generating electrical oscillations in InN and graded-gap GaInN Gunn diodes that involve resistive contacts at the cathode and the anode, and possess a 1-μm long active region. The research is aimed at suggesting an optimized structure for the graded-gap GaInN diode to obtain a maximum microwave power and maximum frequency of the oscillations, while consuming the lowest possible amount of DC power. Methods and Methodology. А hydrodynamic simulation has been performed of transport of electrons in graded-gap semiconductors, and an integro-differential equation analyzed concerning voltage drop across elements of the related RLC circuit. Results.The power spectra of oscillations have been analyzed for a variety of parameters of both the Gunn diode and the RLC circuit. The frequency dependences of the oscillatory power, characteristic of different electron concentrations, provide evidence for the possibility of obtaining considerable microwave powers at frequencies above 300 GHz through the use of graded-gap GaInN diodes. Conclusion. The results that have been obtained clearly confirm the expected practicality of using a graded GaInN layer in the InN diode for increasing the power of microwave oscillations, reducing the necessary level of the DC power, and restraining the dependence of the output characteristics on the electron density. The highest power of oscillations has been demonstrated by the InN diode with a 0.1 µm long graded-gap layer of GaInN. Meanwhile, the oscillation frequency generated in that diode is somewhat lower than in the InN diode. A compromise between the values of generated power and the oscillation frequency has been reached in the diode with a graded-gap GaInN layer of 0.9 µm in length. In addition, the latter structure requires the lowest level of DC power for effectuating microwave generation at the higher feasible frequencies.

A non-traditional, for AlInN, method of controlling adatom kinetics and a low temperature growth condition were employed to improve the quality of high indium content aluminum indium nitride films. Metal-rich surfaces were used to enhance adatom mobility and compensate for the low growth temperature (Tsub ≤ 400 °C) effect of reducing surface diffusion lengths. The metal-rich approach resulted in 12 times lower x-ray diffraction full-width at half-maximum rocking curve figures of merit when compared to literature. In addition to promising photoluminescence emission, these results indicate improved structural quality over other reported approaches. AlInN films with ∼70% indium content were characterized via x-ray diffraction, atomic force microscopy, and photoluminescence spectroscopy with each technique indicating an optimal growth temperature of 350 °C. Al0.3In0.7N grown above 400 °C exhibited phase separation and a reduction in quality, while samples grown colder were predominantly single-phase and displayed improved photoluminescence at ∼1.45 eV. The photoluminescence spectra suggest emission from quantum wire-like structures with dimensions ranging from 15 to 18 nm. These low-temperature, metal-rich findings for high indium content AlInN are promising for future long-wavelength III-nitride optical devices. [ABSTRACT FROM AUTHOR]

Nominally undoped indium nitride (InN) is known to have an electron accumulation layer on its surface, and prior studies have shown this layer to be sensitive to chemical species. However, the exact roles of these species and the underlying mechanism of e− accumulation layer formation are not clear. In this work, it is shown that ambient adsorbed water on the InN surface strongly enhances the e− accumulation layer formed due to intrinsic surface states. Desorption of ambient physisorbates leads to a decrease in band bending, an increase in work function in undoped InN, and the observation of a p-type Mott-Schottky behavior in Mg:doped InN. The underlying mechanism of this surface-adsorbed water interaction may be through a process called "surface transfer doping," which has previously been reported in hydrogenated diamond and other semiconductors such as GaN and ZnO. [ABSTRACT FROM AUTHOR]

The electrical properties of InN give it potential for applications in III-nitride electronic devices, and the use of lower-dimensional epitaxial structures could mitigate issues with the high lattice mismatch of InN to GaN (10%). N-polar MOCVD growth of InN was performed to explore the growth parameter space of the horizontal one-dimensional InN quantum wire-like structures on miscut substrates. The InN growth temperature, InN thickness, and NH3 flow during growth were varied to determine optimal quantum wire segment growth conditions. Quantum wire segment formation was observed through AFM images for N-polar InN samples with a low growth temperature of 540 °C and 1–2 nm of InN. Below 1 nm of InN, quantum dashes formed, and 2-D layers were formed above 2 nm of InN. One-dimensional anisotropy of the electrical conduction of N-polar InN wire-like samples was observed through TLM measurements. The sheet resistances of wire-like samples varied from 10–26 kΩ/□ in the longitudinal direction of the wire segments. The high sheet resistances were attributed to the close proximity of the treading dislocations at the InN/GaN interface and might be lowered by reducing the lattice mismatch of InN wire-like structures with the substrate using high lattice constant base layers such as relaxed InGaN. [ABSTRACT FROM AUTHOR]

Chemical vapor deposition of indium nitride (InN) is severely limited by the low thermal stability of the material, and, thus, low-temperature deposition processes such as atomic layer deposition (ALD) are needed to deposit InN films. The two chemically and structurally closely related materials—aluminum nitride and gallium nitride (GaN)—can be deposited by both plasma and thermal ALD, with ammonia (NH3) as a nitrogen precursor in thermal processes. InN, however, can only be deposited using plasma ALD, indicating that there might be a limitation to thermal ALD with NH3 for InN. We use quantum-chemical density functional theory calculations to compare the adsorption process of NH3 on GaN and InN to investigate if differences in the process could account for the lack of thermal ALD of InN. Our findings show a similar reactive adsorption mechanism on both materials, in which NH3 could adsorb onto a vacant site left by a desorbing methyl group from the surfaces. The difference in energy barrier for this adsorption indicates that the process is many magnitudes slower on InN compared to GaN. Slow kinetics would hinder NH3 from reactively adsorbing onto InN in the timeframe of the ALD growth process and, thus, limit the availability of a thermal ALD process. [ABSTRACT FROM AUTHOR]

This paper presents the improvement of emission and absorption phenomena of 1.55μm quantum dot laser by enhancing the stability of oscillation frequency and minimizing absorption loss. Among the key parameters related to these absorption and emission phenomena, the effective density of state, rate of change of carrier mobility, and optical feedback level were extensively investigated to reduce the fluctuation of the oscillation frequency of the emitted light as well as the absorption loss. These phenomena were investigated through mathematical analysis and numerical simulation using AlN, GaN, and InN quantum dots as the active material of the laser structure. The numerical results were compared, confirming that the InN quantum dot in the active layer significantly improved the absorption and emission phenomena of the quantum dot laser. At the same time, InN is capable of emitting light at a wavelength of 1.55μm due to its band gap of 0.7eV. Consequently, InN has a superior potentiality to other existing materials to fabricate the quantum dot laser operating at the 1.55μm wavelength, which is the window of an optical fiber communication system that offers the lowest attenuation. Therefore, the InN quantum dot laser is expected to be a promising candidate not only in the field of semiconductor technology but also in the field of optical communication in the imminent future. [ABSTRACT FROM AUTHOR]

Investigations of the In(III)porphyrin complexes with substituted salicylates(X) as axial ligands have been carried out using electronic and biological studies. Electronic spectra of the complexes are accompanied by shifting of wavelength towards hypsochromic/blue-shift or bathochromic/red-shift along with 'ƒ' values decided by the nature of the functional groups attached to the salicylate ligand. IR frequencies appear at 550cm-1-400cm-1 for In-N(Por) and at 650cm-1-700cm-1 for In-OSA. ¹HNMR spectra reveal the merging of the salicylate ring with that of the protons of the macrocyclic ring. The 13CNMR studies confirm the resonance of the meso-carbon tetraphenyl porphyrin ring between 130ppm to 160ppm and the salicylate ring carbons in the region of 110ppm to 165ppm. Thermal analysis confirms the presence of indium nitride (In-N) in an argon atmosphere from 0oC to 900oC. Cyclic voltammetry(CV) revealed the reduced or oxidized properties of these complexes lead to the generation of p-anion or cation radicals by two one-electron transfer reactions. In(III)porphyrin complexes with substituted salicylates were also screened for in-vitro antifungal activity(%inhibition) against the microbe "Acremonium fusidoides spp." using the PDA method, which shows that the percentage inhibition is inverse to the diameter of the colony. The freeradical scavenging or antiradical activity (%RSA) by the DPPH method reveals that these complexes were absorbance and concentration-dependent. [ABSTRACT FROM AUTHOR]

Mechanical stabilities and properties are critical in real applications of materials, as well as material and machine design. With the success of graphene, graphene-like materials arose tremendous interest in the past few years. Different from bulk materials, two-dimensional (2D) materials have prominent non-linear elastic behaviors. Here, we briefly review the mechanical stabilities and properties of graphene-like 2D III-nitrides, including boron nitride (BN), aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), and thallium nitride (TlN). These nitrides are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. As a result, they play a central role in solid-state light-emitting devices. Their Young's modulus, Poisson's ratio, ultimate tensile strength, and elastic limits under various strains are extensively studied, as well as their high-order elastic constants and non-linear behaviors. These studies provide a guide for their practical applications and designs. [ABSTRACT FROM AUTHOR]

Among the semiconductors formed by a 13th group element and nitrogen, indium nitride (InN) has promising electronic and optical properties, which make it an appropriate material for light-emitting devices and high-speed electronic applications. One-dimensional and two-dimensional InN structures, such as nanotubes and nanosheets, respectively, are expected to present novel advanced characteristics different from those of bulk InN, bringing new prospects in the designs of electronic and optical nanodevices. Despite the difficulties in the synthesis and mass production of the indium nitride nanotubes and nanosheets, the understanding of their properties, including mechanical ones, deserves more research attention, taking into account future perspectives. In this context, the present work is an exploratory study on the numerical evaluation of elastic properties of InN nanosheets and nanotubes, using the nanoscale continuum modelling (also called molecular structural mechanics) approach. The results obtained constitute a solid base for further investigation on the mechanical behaviour of the InN nanostructures, where studies are at an early stage or almost absent. [ABSTRACT FROM AUTHOR]

Plasma-enhanced atomic layer deposition (PEALD) enables the epitaxial growth of ultrathin indium nitride (InN) films at significantly reduced process temperatures and with greater control of layer thickness compared to other growth methods. However, the reliance on plasma-surface interactions increases the complexity of the growth process. A detailed understanding of the relationship between the plasma properties and the growth kinetics is therefore required to guide the tuning of growth parameters. We present an in situ investigation of the early-stage PEALD growth kinetics of epitaxial InN within three different plasma regimes using grazing incidence small-angle x-ray scattering (GISAXS). The GISAXS data are supported by diagnostic studies of the plasma species generation in the inductively coupled plasma source as a function of the relative concentrations of the nitrogen/argon gas mixture used in the growth process. The growth mode is found to be correlated to the production of nitrogen species in the plasma, with high concentrations of the atomic N species promoting Volmer–Weber growth (i.e., island growth) and low concentrations promoting Stranski–Krastanov growth (i.e., layer-plus-island growth). The critical thickness for island formation, island center-to-center distance, and island radius are found to increase with ion flux. Furthermore, the island center-to-center distance and areal density are observed to change only during plasma exposure and to continue changing with exposure even after the methylindium adlayer is believed to have fully reacted with the plasma. Our results demonstrate the potential to control the growth kinetics during PEALD of epitaxial films by intentionally accessing specific regimes of plasma species generation. [ABSTRACT FROM AUTHOR]

Due to its intrinsic properties and the possible lattice match to GaN, InAlN is expected to allow the fabrication of optimal high electron mobility transistors for high power and high frequency applications. However, the crystal quality of InAlN nearly lattice-matched to GaN degrades when the layer thickness is increased, and this is a strong limitation for the fabrication of devices in which thick barriers need to be used. In this work, we have carried out a detailed theoretical investigation of the behavior of indium atoms in the alloy. It is clearly shown that in the presence of nitrogen vacancies, which are common defects in these materials, indium nitride clusters will present excess formation energy up to diameters around 1.4 nm. In parallel, Z-contrast TEM observations close to the InAlN/GaN interface show that 2–5 nm size indium rich areas form and are systematically connected to the vertical degradation channels. This is at variance with published results, which concluded that the observed degradation was exclusively either due to the underlying threading dislocations or due to a characteristic three-dimensional growth mode. [ABSTRACT FROM AUTHOR]

We describe an indium bump process applicable to our low-temperature detectors and associated readout. A titanium nitride under bump metallization layer is reactively sputtered onto wiring pads as a diffusion barrier and adhesion layer. Indium is thermally evaporated onto this layer at the desired thickness for bump bonding. Patterning for both titanium nitride and indium layers is accomplished by liftoff techniques. The process flow is compatible with many processes utilized for the fabrication of low-temperature detectors and other superconductive devices. [ABSTRACT FROM AUTHOR]

We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 µm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm²/Vs for 1 µm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films. [ABSTRACT FROM AUTHOR]

In gas-insulated switchgear (GIS), partial discharge (PD) can be monitored by detecting sulfur hexafluoride-nitrogen (SF6-N2) decomposition components. In this paper, silver oxide (Ag2O) modification was introduced to improve the gas-sensing properties of graphene-like indium nitride (InN). The adsorption process of NO2, SO2F2, SOF2 and SOF4 on Ag2O-InN was simulated based on the first principles calculation and density functional theory (DFT). The gas sensing mechanism was revealed by density of states theory and molecular orbital theory. It is found that Ag2O doping greatly improves the adsorption properties of InN to NO2 and SOF2 molecules. The adsorption capacity of Ag2O-InN to the four gas molecules is: NO2 > SOF2 > SOF4 > SO2F2. All adsorptions can proceed spontaneously, and the gas molecules are electron donors and Ag2O-InN is an electron acceptor. Through the analysis of recovery time, it is found that NO2 is difficult to desorb from the substrate due to the significant adsorption energy of −2.201 eV, while SOF4, SOF2 and SO2F2 have a moderate adsorption energy of −0.185 eV, −0.754 eV and 0.173 eV and extremely short desorption time. The conductivity of the whole system changed after these four gases were adsorbed on the Ag2O-InN monolayer. In summary, Ag2O-InN can be used as NO2 adsorbent and gas sensors to detect SOF4, SOF2 and SO2F2. This paper provides a method for on-line monitoring of partial discharge in GIS. [ABSTRACT FROM AUTHOR]

The effect of pressure on band parameters and optical characteristics in the zinc-blende structure of InN has been investigated. An ab initio pseudopotential plane waves method has been used. At zero pressure, our results regarding the fundamental energy band gap, electron effective mass and many optical parameters concord well with recent experimental data. Monotonic and non-linear behavior of most quantities have been shown upon compression. The present study is useful for the use of zinc-blende InN in optoelectronics and microelectronics applications. [ABSTRACT FROM AUTHOR]

In this study, a radio-frequency plasma-assisted chemical beam epitaxy (RF-PACBE) system with low growing temperatures was used to grow high-quality indium nitride (InN) thin films. The prepared InN thin films were annealed through a line-shaped CO2 laser beam irradiation in an atmospheric environment at room temperature. The structural and electrical properties of InN thin films annealed with different CO2 laser annealing parameters were measured and analyzed. The crystalline grains turned into large and granular morphologies after the InN thin films were annealed under various feeding speeds of a motorized X-axis positioning stage. According to the measured XRD patterns and rocking curves, the InN (0 0 2) peak intensities of laser-annealed thin films were higher than those of as-grown InN thin films. All surface roughnesses and sheet resistances of laser-annealed InN thin films were higher and less than those of as-grown InN thin films. At the set feeding speed of 7.5 mm/s, the laser-annealed InN thin film had the largest grain size of 69.4 nm and the lowest sheet resistance of 20.21 ± 0.27 Ω/sq. The experimental results revealed that the proper annealing conditions could decrease grain boundaries and release internal stresses to enhance the electrical properties through adjusting feeding speeds. [ABSTRACT FROM AUTHOR]

An active region design based on InGaN / delta-InN quantum well (QW) with AlGaN interlayer (IL) and GaN barriers (delta-structure) is investigated for potential high-efficiency visible light emitters. Numerical simulations demonstrate a large wavelength redshift with a simultaneous increase of the electron-hole wavefunction overlap for the delta-structure as compared to the conventional InGaN QW with AlGaN IL and GaN barriers. Proof of concept experimental growths via the metalorganic chemical vapor deposition demonstrate the effect of the delta-InN insertion into the conventional InGaN-based QW. [ABSTRACT FROM AUTHOR]

To evaluate the polarity, energy band diagram, and oxygen (O) distribution of a heavily Mg-doped InN (InN:Mg+) epilayer with a Mg concentration of 1.0±0.5×1020cm-3, the core-level and valence band (VB) photoelectron spectra are investigated by angle-resolved soft and hard X-ray photoelectron spectroscopies. The InN:Mg+ epilayers are grown by radio-frequency plasmaassisted molecular beam epitaxy. In this doping level, the polarity inversion from In-polar to N-polar occurs with the increase in the Mg flow rate under the same growth conditions, and the VB spectrum clearly indicates the direction of polarity of InN:Mg+, which is N-polar. The energy band diagram is considered to exhibit a two-step downward bending structure due to the coexistence of the n+ surface electron accumulation layer and heavily Mg-doped p+ layer formed in the bulk. The O concentration rapidly increases until ∼4 nm with respect to the surface, which is deduced to be one of the reasons of the formation of the anomalous two-step energy band profile. [ABSTRACT FROM AUTHOR]

The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ∼1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (∼500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500meV at 15K for the 1-ML and 2-ML InN wells, respectively. [ABSTRACT FROM AUTHOR]

The semiconductor material of ternary alloy of Indium and Aluminum nitride (InxAl1-xN) has interesting properties for potential optoelectronic applications and solar cells as well. In the present research, layers of In0.63Al0.37 N were synthesized using the DC reactive sputtering magnetron technique, on p-type silicon substrates (100), ITO/PET, and ITO/Glass. The reason why an intermediate layer of ITO was placed on the PET and Glass substrates is that possibly in an InAlN thin-layer solar cell, the ITO would fulfill the role of Conductive Transparent Oxide (CTO). This CTO would be located between the window layer and the transparent substrate. On the other hand, in the case of a hetero-union solar cell, InAlN-n would be located on the Si-p material, in order to form the p–n junction. Therefore, the present work allowed us to study subsystems in which the InAlN would be part of the window layer in three different types of solar cells. [ABSTRACT FROM AUTHOR]

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Surface plasmon resonance (SPR)-based fiber optic sensor using bi-layers of Pt-InN is theoretically reported. Sensitivity and figure of merit of the sensor are increased with an increase in the thickness of the Pt layer for all thicknesses of InN layers. For a particular thickness of the Pt layer, sensitivity gets bigger as the thickness of the InN layer is raised. Maximum sensitivity is attained by a 120 nm thick Pt-25 nm thick InN layer-based SPR sensor. [ABSTRACT FROM AUTHOR]

Among the semiconductors formed by a 13th group element and nitrogen, indium nitride (InN) has promising electronic and optical properties, which make it an appropriate material for light-emitting devices and high-speed electronic applications. One-dimensional and two-dimensional InN structures, such as nanotubes and nanosheets, respectively, are expected to present novel advanced characteristics different from those of bulk InN, bringing new prospects in the designs of electronic and optical nanodevices. Despite the difficulties in the synthesis and mass production of the indium nitride nanotubes and nanosheets, the understanding of their properties, including mechanical ones, deserves more research attention, taking into account future perspectives. In this context, the present work is an exploratory study on the numerical evaluation of elastic properties of InN nanosheets and nanotubes, using the nanoscale continuum modelling (also called molecular structural mechanics) approach. The results obtained constitute a solid base for further investigation on the mechanical behaviour of the InN nanostructures, where studies are at an early stage or almost absent.

In this paper, the structural, electronic, optical, and thermal properties of indium nitride in the pressure phases are investigated. The calculations are performed using the pseudopotential method in the framework of density functional theory and by using the quantum-espresso Package. In the calculations, the exchange-correlation terms of LDA, GGA, and PBE0 approximation are used. The results show that indium nitride retains its semiconducting properties under the pressure phase and has a static refractive index of 2.75. And the largest part in the valence band is related to the orbital s of the N atom and in the conduction band is to the orbitals of s and p of the In atom. The results of the optical properties show that the band structure approximation corresponds to the imaginary contribution of the dielectric function as well as the approximate equality of the bandgap to the optical bandgap. The results are consistent with other available data.

In this study, an aluminum indium gallium nitride (AlInGaN)/aluminum indium nitride (AlInN)/aluminum indium gallium nitride (AlInGaN) tunnel electron blocking layer (EBL) is introduced instead of traditional EBL in aluminum gallium nitride (AlGaN)-based deep UV light-emitting diodes (DUV LEDs). The simulation results reveal that the internal quantum efficiency (IQE) and radiative recombination rate are impressively improved in the proposed DUV LED as compared to the conventional LED. This significant improvement is assigned to the uniform recombination of carriers in the active zone due to the reduction of lattice mismatching, which is the main cause of reducing the induced piezoelectric polarization field. Additionally, the tunnel EBL in our proposed structure also assists the hole transport into the active zone. As a result, not only is IQE improved, but also the efficiency droop is reduced significantly in our proposed device. This is attributed to the enhanced recombination of electron-hole pairs in the active region. [ABSTRACT FROM AUTHOR]

An experimental study aimed at developing the method of the spontaneous synthesis of InGaN/GaN nanowires formed as radial heterostructures by molecular-beam epitaxy is reported. By means of electron microscopy, it is shown that a wedge-shaped crack can be formed at an In content x = 0.4 and 0.04 in the core and shell, respectively. On the basis of the model of internal structural stresses, a formula is proposed to estimate the critical dimensions and composition for the formation of cracks in nanowires. Comparison of the estimates with the experimental morphology data shows good agreement between them. [ABSTRACT FROM AUTHOR]

The high electronegativity between the atoms of two-dimensional (2D) group-III nitrides makes them attractive to demonstrating a strong out-of-plane piezo-electricity effect. Energy harvesting devices can be predicted by cultivating such salient piezoelectric features. This work explores the tribo-piezoelectric properties of 2D-indium nitride (InN) as a promising candidate in nanogenerator applications by means of first-principles calculations. In-plane interlayer sliding between two InN monolayers leads to a noticeable rise of vertical piezoelectricity. The vertical resistance between the InN bilayer renders tribological energy by the sliding effect. During the vertical sliding, a shear strength of 6.6–9.7 GPa is observed between the monolayers. The structure can be used as a tribo-piezoelectric transducer to extract force and stress from the generated out-of-plane tribo-piezoelectric energy. The A–A stacking of the bilayer InN elucidates the highest out-of-plane piezoelectricity. Any decrease in the interlayer distance between the monolayers improves the out-of-plane polarization and thus, increases the inductive voltage generation. Vertical compression of bilayer InN produces an inductive voltage in the range of 0.146–0.196 V. Utilizing such a phenomenon, an InN-based bilayer compression-sliding nanogenerator is proposed, which can tune the generated tribo-piezoelectric energy by compressing the interlayer distance between the InN monolayers. The considered model can render a maximum output power density of ~ 73 mWcm−2 upon vertical sliding. [ABSTRACT FROM AUTHOR]