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[Display omitted] • Janus membrane based on CsPbBr 3 QDs is first prepared via a parallel electrospinning. • CsPbBr 3 QDs as fluorescent emitter are first used to build multifunctional membrane. • Janus microfiber as building element ensures strong luminescence of CsPbBr 3 QDs. • The membrane can stabilize CsPbBr 3 QDs to achieve intense and steady fluorescence. • Membrane has green fluorescence and tunable magnetism and aeolotropic conductivity. Lead halide perovskite quantum dots (QDs) are promising semiconductors for next-generation photoelectric devices. However, the development of perovskite QDs-based multifunctional materials still needs to be addressed in order to further advance the application of perovskite QDs. Herein, a successful synthesis of Janus microfibers array Janus membrane (JMAJM) with up-down structure and multifunction of luminescence, magnetism and electroconductivity is firstly achieved based on CsPbBr 3 QDs through a parallel electrospinning. JMAJM comprises up-down two layers tightly bonded together. The up-layer of JMAJM is luminescence/magnetism Janus microfibers array (L/M-JMAJM) constructed by [CsPbBr 3 /polymethyl methacrylate (PMMA)]//[CoFe 2 O 4 /PMMA] Janus microfibers as building elements. The down-layer of JMAJM is luminescence/electroconductivity Janus microfibers array (L/E-JMAJM) fabricated by [CsPbBr 3 /PMMA]//[polyaniline (PANI)/PMMA] Janus microfibers as building elements. Two independent microcosmic regions are designed and realized in a Janus microfiber, confining luminescence with magnetic or conductive substances into their respective regions, thus minimizing adverse effects of other dark-colored functional substances on the fluorescence of CsPbBr 3 QDs. This peculiar Janus microfiber enables the effective separation and high integration of CsPbBr 3 QDs with other functional substances. The up-down structure of JMAJM ensures a high integration of luminescence, magnetism and conductivity. Meanwhile, JMAJM addresses the environmental instability of CsPbBr 3 QDs while simultaneously endows perovskite QDs-based materials with additional functions to realize multifunction. Under ultraviolet excitation, fluorescence characteristics of the CsPbBr 3 QDs in JMAJM are maintained, exhibiting a vibrant green emission at 517 nm. Meanwhile, JMAJM achieves a maximum saturation magnetization of 20.32 emu·g−1, high conductance of 10-2 S and aeolotropic electroconductivity degree of 107. The combination of micro-partition with macro-partition in JMAJM receives superior concurrent luminescence-magnetic-conductive multifunction. This work provides a novel idea and strategy for advancing perovskite QDs-based multifunctional materials. [ABSTRACT FROM AUTHOR]

The interface of perovskite solar cells (PSCs) plays an important role in transferring and collecting charges. Interface defects are important factors affecting the efficiency and stability of PSCs. Here, the buried interface between SnO2 and the perovskite layer is bridged by two‐dimensional (2D) MBene, which improves charge transfer. MBene can deposit additional electrons on the surface of SnO2, passivate its surface defects and facilitate the charge collection. Moreover, the dipole moment formed at the interface increases the electron transfer ability in the PSCs. MBene also regulates the growth of perovskite crystals, improves the quality of perovskite films, and reduces its grain boundary defects. As a result, PSCs based on FA0.2MA0.8PbI3 and (FAPbI3)0.95(MAPbBr3)0.05 get the enhanced efficiencies of 22.34 % and 24.32 % with negligible hysteresis. Furthermore, the optimized device exhibits better stability. This work opens up the application of MBene materials in PSCs, reveals a deeper understanding of the mechanism behind using 2D materials as an interface modification layer, and shows opportunities for using MBene as potential material in photoelectric devices. [ABSTRACT FROM AUTHOR]

Comprehensive Summary: Stability against oxygen is an important factor affecting the performance of organic semiconductor devices. Improving photooxidation stability can prolong the service life of the device and maintain the mechanical and photoelectric properties of the device. Generally, various encapsulation methods from molecular structure to macroscopic device level are used to improve photooxidation stability. Here, we adopted a crystallization strategy to allow 14H‐spiro[dibenzo[c,h]acridine‐7,9′‐fluorene] (SFDBA) to pack tightly to resist fluorescence decay caused by oxidation. In this case, the inert group of SFDBA acts as a "steric armor", protecting the photosensitive group from being attacked by oxygen. Therefore, compared with the fluorescence quenching of SFDBA powder under 2 h of sunlight, SFDBA crystal can maintain its fluorescence emission for more than 8 h under the same conditions. Furthermore, the photoluminescence quantum yields (PLQYs) of the crystalline film is 327% higher than that of the amorphous film. It shows that the crystallization strategy is an effective method to resist oxidation. [ABSTRACT FROM AUTHOR]

Two-dimensional electron gas (2DEG) has drawn significant attention due to its intriguing properties. Recent advances have encouraged the use of one-dimensional electron gas for high-performance functional devices. Here, we develop a universal method of atomic force microscope tip etching to construct a quasi-one-dimensional (Q1D) channel on the STO surface. Ar+ ion beam is used to bombard the SrTiO3 surface for inducing the Q1D electron gas (Q1DEG). Compared with 2DEG, Q1DEG exhibits a significant enhancement in terms of photoconductivity. At room temperature, it exhibits ultrahigh sensitivity to ambient light with increase in photocurrent by over five orders of magnitude. A slow response to the ON/OFF light indicates persistent photoconductivity (PPC), originating from the defect levels. Furthermore, we investigate the wavelength dependence of PPC in Q1DEG. It is found that decreasing wavelength favors photoresponsivity and prolongs the response time. Based on the electron diffusion process in the oxygen-deficient region, a mechanism has been proposed to explain the advantages of Q1DEG over 2DEG in regard to photoelectric response. This work paves a path for the development of high-performance photoelectric devices based on Q1D electronic systems. [ABSTRACT FROM AUTHOR]

Organic photoelectric neuromorphic devices that mimic the brain are widely explored for advanced perceptual computing. However, current individual neuromorphic synaptic devices mainly focus on utilizing linear models to process optoelectronic signals, which means that there is a lack of effective response to nonlinear structural information from the real world, severely limiting the computational efficiency and adaptability of networks to static and dynamic information. Here, a feedforward photoadaptive organic neuromorphic transistor with mixed‐weight plasticity is reported. By introducing the potential of the space charge to couple gate potential, photoexcitation, and photoinhibition occur successively in the channel under the interference of constant light intensity, which enables the device to transform from a linear model to a nonlinear model. As a result, the device exhibits a dynamic range of over 100 dB, exceeding the currently reported similar neuromorphic synaptic devices. Further, the device achieves adaptive tone mapping within 5 s for static information and achieves over 90% robustness recognition accuracy for dynamic information. Therefore, this work provides a new strategy for developing advanced neuromorphic devices and has great potential in the fields of intelligent driving and brain‐like computing. [ABSTRACT FROM AUTHOR]

Janus group-III chalcogenide monolayers and based heterostructures with breaking vertical structural symmetry offer additional prospects in the upcoming high-performance photoelectric devices. We studied the geometrical, electronic, and photoelectric properties of Janus group-III chalcogenide monolayers and heterostructures. The most energy favorable stacking design of ten vertical heterostructures are considered. The results showed that the Janus Se-In-Ga-S and S-In-Ga-Se monolayers exhibit semiconducting characteristics with the band gaps of 1.295 eV and 1.752 eV, respectively. Furthermore, the different stacking configurations and surface termination at interface can realize the transition of band alignment between type I and type II due to the interlayer coupling. Moreover, we systematically investigated the photoelectric properties of Janus group-III chalcogenide heterostructures and predicated an optimized power conversion efficiency of 16.2%. These findings can aid in comprehending the customized characteristics of Janus group-III chalcogenide heterostructures, offering theoretical guidance for creating innovative photoelectric devices. [ABSTRACT FROM AUTHOR]

Near-infrared organic small molecule luminescent materials have the advantages of easy modification, high quantum efficiency, good biological affinity, and color adjustability; thus, have promising application prospects in the fields of photoelectric devices, sensitive detection, photodynamic therapy, and biomedical imaging. However, traditional organic luminescent molecules have the problems of short emission wavelength, aggregation-causing emission quenching, and low quantum yield. Herein, we successfully synthesized four D-π-A-D light-emitting molecules based on electron-withdrawing malonitrile group and different electron-donating arylamine groups. These compounds showed satisfactory solvatochromism, aggregation-induced emission, red and near-infrared fluorescence, high photoluminescence quantum efficiency and temperature response properties. This successful example of molecular engineering provides a valuable reference for the development of advanced NIR materials with AIE and temperature-sensitive properties. [ABSTRACT FROM AUTHOR]

Pulsed laser deposition (PLD) is a simple and extremely versatile technique to grow thin films and nanomaterials from a wide variety of materials. Compared to traditional fabrication methods, PLD is a clean physical vapour deposition approach that avoids complicated chemical reactions and by-products, achieving a precise stochiometric transfer of the target material onto the substrate and providing control over the film thickness. Halide perovskite materials have attracted extensive attention due to their excellent photoelectric and photovoltaic properties. In this paper, we present an overview of the fundamental and practical aspects of PLD. The properties and preparation methods of the halide perovskite materials are briefly discussed. Finally, we will elaborate on recent research on the preparation of perovskite solar cells by PLD, summarize the advantages and disadvantages of the PLD preparation, and prospect the all-vacuum PLD-grown solar cells in a full solar cell structure. [ABSTRACT FROM AUTHOR]

Perovskite quantum dots (QDs) and organic materials have great research potential in the field of optoelectronic devices. In this paper, MEH-PPV/CsPbBr3 heterojunction photodetectors (PDs) are prepared by spin coating method based on the good photoelectric properties of CsPbBr3 perovskite QDs and MEH-PPV. The MEH-PPV/CsPbBr3 heterojunction improves the energy level arrangement, and CsPbBr3 QDs can passivate the surface defects of MEH-PPV films to achieve effective charge separation and transfer, thus inhibiting the dark current and improving the photoelectric performance of the device. Under 532 nm laser irradiation, the responsivity (R) of MEH-PPV/CsPbBr3 heterojunction PD is 11.98 A W−1, the specific detectivity (D *) is 6.98 × 1011 Jones, and the response time is 15/16 ms. This work provides experience for the study of perovskite QDs and organic materials heterojunction optoelectronic devices. [ABSTRACT FROM AUTHOR]

New energy sources such as solar energy have been developed and utilized due to the shortage of non-renewable energy, and photoelectric materials have attracted more attention, accordingly. Moreover, flexible optoelectronic devices are crucial in the fields of wearable artificial intelligence, portable energy, and smart medical care. At present, photoelectric devices based on traditional perovskite cobalt oxide rigid films have problems such as inability to bend and deformation, which limits their application environment. Here, natural mica with atomically flat surface, high thermal stability, high transparency and good mechanical flexibility was selected as the substrate for preparing a series of LaCoO 3 flexible photoelectric films. These films exhibit excellent photoelectric properties and flexible properties. More importantly, the flexible film still has fast response speed and reproducible light response after 500 bending cycles. It reveals that all-inorganic perovskite LaCoO 3 is a promising candidate for designing high-performance, flexible and wearable optoelectronic devices. [Display omitted] [ABSTRACT FROM AUTHOR]

Photoelectric synaptic devices with optical sensing capability are of great importance in simulating human vision systems. Especially realizing all‐in‐one vision neuristor on silicon based new materials and principles is being pursued. 2D van der Waals (vdW) materials have the unique advantage of arbitrary stacking on demand. Herein, a full‐vdW two‐terminal 2D ferroelectric α‐In2Se3/SnSe p–n heterojunction is proposed to construct an optoelectronic neuristor to simulate visual synaptic functions. Implementation of these simulations is attributed to the co‐modulation of the electrical polarization reconfigurable built‐in electric field caused by p–n junction and photo‐inducing ferroelectric polarization switching. These functions include ultra‐high paired‐pulse facilitation index (457%), short synaptic plasticity, long synaptic plasticity, and retina‐like optical adaptations. The high PPF is crucial for high‐precision decoding and processing of visual information. Meanwhile, the classical Pavlovian conditioned reflexes associated with associative learning are also emulated showing the ability of the device to handle complex electrical and optical inputs. This study demonstrates that two‐terminal ferroelectric p–n heterojunctions have great potential in high‐precision multifunctional optoelectronic visual synaptic devices. [ABSTRACT FROM AUTHOR]

The Rashba effect appears in the semiconductors with an inversion–asymmetric structure and strong spin-orbit coupling, which splits the spin-degenerated band into two sub-bands with opposite spin states. The Rashba effect can not only be used to regulate carrier relaxations, thereby improving the performance of photoelectric devices, but also used to expand the applications of semiconductors in spintronics. In this mini-review, recent research progress on the Rashba effect of two-dimensional (2D) organic–inorganic hybrid perovskites is summarized. The origin and magnitude of Rashba spin splitting, layer-dependent Rashba band splitting of 2D perovskites, the Rashba effect in 2D perovskite quantum dots, a 2D/3D perovskite composite, and 2D-perovskites-based van der Waals heterostructures are discussed. Moreover, applications of the 2D Rashba effect in circularly polarized light detection are reviewed. Finally, future research to modulate the Rashba strength in 2D perovskites is prospected, which is conceived to promote the optoelectronic and spintronic applications of 2D perovskites. [ABSTRACT FROM AUTHOR]

Compared with purely electrical neuromorphic devices, those stimulated by optical signals have gained increasing attention due to their realistic sensory simulation. In this work, an optoelectronic neuromorphic device based on a photoelectric memristor with a Bi2FeCrO6/Al-doped ZnO (BFCO/AZO) heterostructure is fabricated that can respond to both electrical and optical signals and successfully simulate a variety of synaptic behaviors, such as STP, LTP, and PPF. In addition, the photomemory mechanism was identified by analyzing the energy band structures of AZO and BFCO. A convolutional neural network (CNN) architecture for pattern classification at the Mixed National Institute of Standards and Technology (MNIST) was used and improved the recognition accuracy of the MNIST and Fashion-MNIST datasets to 95.21% and 74.19%, respectively, by implementing an improved stochastic adaptive algorithm. These results provide a feasible approach for future implementation of optoelectronic synapses. [ABSTRACT FROM AUTHOR]

In recent years, organic-inorganic hybrid lead halide perovskite materials have attracted much attention in the world because of their excellent photoelectric properties, and have been successfully applied in many fields such as solar photovoltaic, photoelectric detection, electroluminescence and so on. At present, most of the device research focuses on perovskite polycrystalline materials, but perovskite single crystal materials have excellent properties such as lower defect state density, higher carrier mobility, longer carrier recombination lifetime, wider light absorption range and higher stability, which can effectively reduce the scattering loss during carrier transport and non-radiative recombination at the grain boundary, and inhibit the hysteresis effect caused by ion migration. Using perovskite single crystal thin film as the active layer of the device is expected to produce more efficient and stable perovskite photoelectric devices. At present, many preparation methods of perovskite single crystal films have been reported, mainly including solution-processed space-confined method, chemical vapor deposition method, top-down processing method, etc. Among them, solution-processed space-confined method is the most widely developed and applied. This paper focuses on the preparation of high-quality perovskite single crystal thin films by solution-processed space-confined method, and the research progress of perovskite single crystal thin films in photodetectors, solar cells, field effect transistors, light-emitting diodes and other related devices, and prospects the future development trend of perovskite single crystal thin films and photoelectric devices. [ABSTRACT FROM AUTHOR]

A van der Waals (vdW) heterostructure is formed by combining multiple materials through vdW bonds. It can combine the advantages of electronic, optical, thermal, and magnetic properties of different 2D materials and has the potential to develop into the next generation of high‐performance functional devices. Herein, the current research advances of vdW heterostructures are reviewed. First, current fabrication methods and physical structures of vdW heterostructures are summarized. The 2D/nD (n = 0,1,2,3) mixed‐dimensional heterostructures are discussed in detail. Second, a new type of vdW heterostructure is introduced based on two‐dimensional electron gas with a nanoscale junction interface. Finally, the application prospects of vdW heterostructures in photoelectric and memory devices are further outlined by combing new applications in the neural networks. This review shows that vdW heterostructures have great advantages in high integration, energy harvesting, and logical operations, and it provides directions and suggestions for the future research and application of environmentally friendly, high‐performance, and smart functional devices. [ABSTRACT FROM AUTHOR]

The photoelectric synaptic devices with the bidirectional optical response and multilevel nonvolatile all‐optical pulse control are the basis for constructing the sensing‐memory‐computing hardware network. However, the current all‐optical‐pulse‐regulated photoelectric synaptic devices cannot realize the bidirectional and multistage nonvolatile regulation of photocurrent responsivity under the detection light excitation. Here, p‐Si/n‐ZnO heterojunction synaptic devices are constructed, and the bidirectional, nonvolatile control of the synaptic device under visible light excitation is realized with up to 60 states of photocurrent responsivity by ultraviolet (UV) and near‐infrared (NIR) irradiation. Based on the performance of the synaptic device, the artificial feedback network can be built to realize the classification and recognition of colored handwritten digits. The recognition accuracy for optical handwritten digits at 415, 530, and 970 nm is 78.1 ± 1.2%, 79.4 ± 1.9% and 79.0 ± 1.6%, respectively. Additionally, the 3 × 3 convolution kernel constructed by the synaptic device can realize image‐processing functions like mean filtering, Gaussian filtering, and edge enhancement. The development of sensing‐storage‐computing all‐optical control artificial vision hardware networks can be greatly aided by the new approach to bidirectional and multistage nonvolatile all‐optical pulse regulation of photoelectric synaptic devices that is proposed in this paper. [ABSTRACT FROM AUTHOR]

Photoelectric synaptic devices as a combination of electronic synapse and photodetector are considered as emerging bio-inspired device technologies. These devices have immense potential to conquer the bottleneck of von Neumann architecture based traditional computing systems. In this Letter, we propose an all-oxide based photoelectric neuro-synaptic resistive random access memory device with the structure of ITO/Ga2O3/ZnO/ITO/Glass, in which the conductance states are reversibly tuned by two different wavelengths (405/522 nm) of visible light spectrum. The strength of light pulse is altered to investigate the learning and forgetting phases of the photoelectric response of the device. A basic biomimetic function "learning-forgetting-rehearsal" behavior is imitated up to 20 cycles. Moreover, emulation of some typical synaptic functions such as associative learning and switching between short and long term plasticities indicate the wavelength awareness of the device. Based on the pure optically induced potentiation/depression characteristics, convolutional neural network simulation achieves an overall test accuracy of 82.5% for the classification of Zalando's article images. The noise tolerance capability of neural network is also examined by applying "salt and pepper" noise in high proportion (75%) to corrupt the images. This work may provide a promising step toward the development of transparent electronics in optogenetics-inspired neuromorphic computing. [ABSTRACT FROM AUTHOR]

Zinc oxide nanorods have broad application prospects in the field of photoelectric devices. However, the application as photodetectors in the visible light band is limited by their narrow luminescent spectrum and poor electrical conductivity. In this work, three different zinc oxide nanorod films respectively with Cu, Al and double-doping have been prepared for investigating the modifying effect of their defect luminescence and electric performance. In this paper, Cu doped zinc oxide with rod structure and Al doped zinc oxide with flaky structure are fabricated by hydrothermal method and sol-gel method, respectively. As for the double-doping, Al doped zinc oxide films are grown on the surface of Si by sol-gel method, and Cu doped zinc oxide nanorods are grown on the surface of Al doped zinc oxide films by hydrothermal method. The results show that the Cu doping can improve the number of defects, leading to the electrons transport from V Zn to Zn i and then releasing the photons. Alternatively, the trivalent aluminum ions exist in zinc oxide nanorods in the form of replacement or gap, increasing the carrier concentration, turn-on voltage and rectification ratio of zinc oxides. As for the Cu–Al double-doping, Al doped zinc oxide films are located between Cu doped zinc oxide nanorods and Si substrate and work as an intermediate layer of current. Trivalent aluminum ions can change the semiconductor properties of zinc oxide and make it have the performance of p-type semiconductor which can improve the electrical properties of zinc oxide semiconductor. Besides, the carrier concentration of Cu–Al double-doping zinc oxide is nearly 3 times higher than that of pure one. Increasing the carrier concentration can increase the current of ZnO–Si heterojunction in the dark, thus improving the photoelectric properties of ZnO nanorods. [ABSTRACT FROM AUTHOR]

Random media pose limitations on the imaging capability of photoelectric detection devices. Currently, imaging techniques employed through random media primarily operate within the laser wavelength range, leaving the imaging potential of terahertz waves unexplored. In this study, we present an approach for terahertz bistatic three-dimensional imaging (TBTCI) of hidden objects through random media. By deducing the field distribution of bistatic terahertz time-domain spectroscopy system, and proposing an explicit point spread function of the random media, we conducted three-dimensional imaging of hidden objects obscured by the random media. Our proposed method exhibits promising applications in imaging scenarios with millimeter-wave radar, including non-invasive testing and biological imaging. [ABSTRACT FROM AUTHOR]

The application of organic crystal in different photoelectric device has different demand on the crystal structure and morphology, while the self‐assembly of different materials into crystals with a desired morphology remains a challenge. Herein, using three binary halogen‐bonded cocrystals involving a nonplanar halogen accepter molecule tetra(4‐pyridyl)‐tetrathiafulvalene (TTF(py)4), co‐crystallized with halogen donor aryl iodides C6F6‐xIx (x = 2,3, 1,3,5‐trifluoro‐2,4,6‐triiodobenzene (IFB), meta‐1,3‐diiodotetrafluorobenzene (mdIFB) or para‐1,3‐diiodotetrafluorobenzene (pdIFB)), are reported. TTF(py)4‐IFB cocrystals are formed primarily via N···I halogen bonds and F···H hydrogen bonds, while TTF(py)4‐mdIFB cocrystals and TTF(py)4‐pdIFB cocrystals are formed primarily via π–π Interactions, N···I halogen bonds and F···H hydrogen bonds, homogeneous π–π interactions are dominant in TTF(py)4‐mdIFB, while heterogeneous π–π interactions are dominant in TTF(py)4‐pdIFB. Through predicted morphology based on the attachment energy (Eatt) theory, especially π–π interaction, the influence of intermolecular interactions on crystal morphology is analyzed. The study demonstrates that the π–π interaction plays an important role in regulating the crystal structure and morphology, the work provides a deeper understanding of π–π interactions in nonplanar binary halogen‐bonded cocrystals. [ABSTRACT FROM AUTHOR]

Exploiting narrow-bandwidth-emission fluorescent materials is crucial for next-generation wide-color gamut displays. Inspired by the narrow-bandwidth-emission characteristic of chlorophyll derivates, the present work develops a facile strategy to synthesize a series of red-emitting chlorophyll-structured CDs (CHL-CDs) with ultra-high color purity and good carrier mobility from different traditional Chinese medicine leaves through a simple cross-linking polymerization and carbonization process. The obtained CHL-CDs exhibit bright photoluminescence centered at 671 nm, ultra-high color purity with an FWHM of 23 nm, and a high photoluminescence quantum yield of up to 62%. More importantly, based on in-depth experimental and theoretical studies on the macroscopic host–guest interactions and microscopic interfacial interactions between the CHL-CDs and charge transporting materials, high-performance red electroluminescent light-emitting diodes are successfully prepared, with FWHM of only 28 nm, turn-on voltage of 3.7 V, maximum luminance of 623 cd m−2, and maximum current efficiency of 0.26 cd A−1. This study provides a universal platform for fabricating narrow-bandwidth-emission CDs with significant applications in photoelectric devices. [ABSTRACT FROM AUTHOR]

Omnidirectional photosensing is crucial in optoelectronic devices, enabling a wide field of view (wFoV) and leveraging potential applications for the Internet of Things in sensors, light fidelity, and photocommunication. The wFoV helps overcome the limitations of line‐of‐sight communication, and transparent photodetection becomes highly desirable as it enables the capture of optical information from various angles. Therefore, developing a photoelectric device with a 360° wFoV, ultra sensitivity to photons, power generation, and transparency is of utmost importance. This study utilizes a heterojunction of van der Waals SnS with Ga2O3 to fabricate a transparent photovoltaic (TPV) device showing a 360° wFoV with bifacial onsite power production. SnS/Ga2O3 heterojunction preparation consists of magnetron sputtering and is free from nanopatterning/nanostructuring to achieve the desired wFoV window device. The device exhibits a high average visible transmittance of 56%, generates identical power from bifacial illumination, and broadband fast photoresponse. Careful analysis of the device shows an ultra‐sensitive photoinduced defect‐modulated heterojunction and photocapacitance, revealed by the impedance spectroscopy, suggesting photon‐flux driven charge diffusion. Leveraging the wFoV operation, the TPV embedded visual and speech photocommunication prototype demonstrated, aiming to help visually and auditory impaired individuals, promising an environmental‐friendly sustainable future. [ABSTRACT FROM AUTHOR]

Mn2+-doped perovskites nanocrystals (NCs) have already been extensively studied in fascinating optical, electronic, and magnetic properties. Such interesting traits make them paid considerable attention in light emitting diodes, solar cells, etc. However, the underlying thermal and photophysical processes governing the overall charge carrier dynamics in Mn-doped NCs are far from clear. Herein, trap concentration and thermalization-dependent optical properties of Mn–Cu co-doped CsPbCl3 NCs were investigated via using steady-state, time-resolved PL spectra, variable-temperature PL spectra, and ultrafast transient absorption spectra. The combined experimental and theoretical studies reveal that Cu2+, as an effective hole trap, can trap the holes from Mn2+ and emit the holes to Mn2+ level at lighter and higher doping, respectively. Moreover, this hole trap is highly thermally sensitive, which is responsible for the abnormal thermal effect of Mn2+ emission with increasing temperature. These findings demonstrate an approach of charge regulation through ion doping, which is meaningful for fabricating efficient photoelectric materials and devices. [ABSTRACT FROM AUTHOR]

Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next‐generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next‐generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light‐emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed. [ABSTRACT FROM AUTHOR]

This document is an editorial summarizing a special issue of the journal "Materials" titled "Colloidal Quantum Dots for Nanophotonic Devices." Colloidal quantum dots (CQDs) are a class of materials with unique advantages, such as tunability of emission wavelength and low-cost solution processibility. They have potential applications in fields like biological medicine, optoelectronics, and quantum information. The special issue contains ten articles, including research and review articles, covering topics such as CQD growth, chemical transformations, and device fabrication. The editorial highlights some of the articles, including those on infrared photodetectors, microspectrometers, photovoltaic devices, and optical material characteristics. [Extracted from the article]

Hierarchically porous metal‐oxide materials have immense potential for many fields, which are highly desired to tackle the limitations of mono‐porous architectures, and to combine the advantages of different pore scales. Herein, a simple small‐molecule‐assisted interfacial assembly strategy, which elegantly combines the mesoscale block copolymers (BCPs)‐directed coassembly and nanoscale phase separations of dicyandiamide (DCDA), is developed for the synthesis of centimeter‐sized inorganic metal‐oxide films with multiscale porosity. The synthetic approach is versatile and can be broadly applied for the fabrication of hierarchically mesoporous metal‐oxide films with single (TiO2, ZrO2, Al2O3) or binary components (TiO2–ZrO2 and TiO2–Al2O3) on various substrates ranging from 1D to 3D. The as‐prepared films possess ordered structures, uniform thickness, interconnected pores, highly crystallized frameworks, and high surface areas (>200 m2 g−1). As a proof of concept, the photoelectric device assembled by the hierarchically mesoporous TiO2 films (denoted as H–TiO2) shows excellent performance, including a high photocurrent of 0.68 mA cm−2 and outstanding stability. The presented method may provide new insight into the controllable synthesis of hierarchically porous materials. [ABSTRACT FROM AUTHOR]

Aromatic heterocyclic compounds have received a lot of interest due to their various important medicinal and biological applications. The broad synthetic investigation and functional usefulness of heterocyclic molecules is driving a surge in research interest. They are found in more than 90% of innovative medications and bridge the gap between biology and chemistry, where so much scientific discovery and application happens. Heterocycles are also useful in a variety of domains, including pharmaceutical chemistry, biochemistry, and others. In this article, quantitative structure‐property relationship (QSPR) models is developed using sombor indices to predict fluorescence properties of aromatic hetero‐cyclic species based on their structural features. This allows researchers to estimate the fluorescence behavior of new molecules without performing experimental measurements. As an application, we have computed the sombor indices for self‐assembled supramolecular graphs made of terpyridine (TPE) and tetraphenylethylene (TPY) molecules that are produced as rosette cycles. This form of rosettes graph is used in electrical sensors, light emitting diodes, bioimaging and photoelectric devices, and so on. Tetraphenylethylene can be used to make fluorescent probes for next‐generation sensing applications with typical induced aggregative emission behavior. [ABSTRACT FROM AUTHOR]

Hierarchically porous metal‐oxide materials have immense potential for many fields, which are highly desired to tackle the limitations of mono‐porous architectures, and to combine the advantages of different pore scales. Herein, a simple small‐molecule‐assisted interfacial assembly strategy, which elegantly combines the mesoscale block copolymers (BCPs)‐directed coassembly and nanoscale phase separations of dicyandiamide (DCDA), is developed for the synthesis of centimeter‐sized inorganic metal‐oxide films with multiscale porosity. The synthetic approach is versatile and can be broadly applied for the fabrication of hierarchically mesoporous metal‐oxide films with single (TiO2, ZrO2, Al2O3) or binary components (TiO2–ZrO2 and TiO2–Al2O3) on various substrates ranging from 1D to 3D. The as‐prepared films possess ordered structures, uniform thickness, interconnected pores, highly crystallized frameworks, and high surface areas (>200 m2 g−1). As a proof of concept, the photoelectric device assembled by the hierarchically mesoporous TiO2 films (denoted as H–TiO2) shows excellent performance, including a high photocurrent of 0.68 mA cm−2 and outstanding stability. The presented method may provide new insight into the controllable synthesis of hierarchically porous materials. [ABSTRACT FROM AUTHOR]

Regulating the interlayer transfer of excited charges is challenging but crucial for high-efficiency photoelectric conversion devices based on semiconductor heterojunction. In this work, the interlayer transfer and recombination of excited charges are investigated for the heterobilayers based on monolayer MoSSe and WS2 by combining density functional theory calculation with nonadiabatic molecular dynamics simulation. Our results reveal that the heterobilayers possess type-II band alignments and the interface engineering from S–Se to S–S stacking configuration reverses the spatial distribution of valence and conduction bands from MoSSe and WS2 to WS2 and MoSSe layers, respectively, which produces interlayer transfer of excited charges in opposite direction. The interface engineering also causes the delocalization of out-of-plane phonon states from the WS2 layer to both WS2 and MoSSe layers. This delocalized character in S–S configuration facilitates the simultaneous coupling of out-of-plane phonon states with the localized donor and acceptor electronic states, accelerates the motion of interface atoms, and reduces the band energy differences, which synergistically promote interlayer transfer of excited charges. As a result, the interlayer transfer of excited charges in S–S configuration is faster than that in S–Se configuration. Our investigation demonstrates that delocalizing phonon states through interface engineering can regulate electron–phonon coupling and interlayer transfer of excited charges. [ABSTRACT FROM AUTHOR]

Metal–organic frameworks (MOFs) with mobile charges have attracted significant attention due to their potential applications in photoelectric devices, chemical resistance sensors, and catalysis. However, fundamental understanding of the charge transport pathway within the framework and the key properties that determine the performance of conductive MOFs in photoelectric devices remain underexplored. Herein, we report the mechanisms of photoinduced charge transport and electron dynamics in the conductive 2D M−HHTP (M=Cu, Zn or Cu/Zn mixed; HHTP=2,3,6,7,10,11‐hexahydroxytriphenylene) MOFs and their correlation with photoconductivity using the combination of time‐resolved terahertz spectroscopy, optical transient absorption spectroscopy, X‐ray transient absorption spectroscopy, and density functional theory (DFT) calculations. We identify the through‐space hole transport mechanism through the interlayer sheet π–π interaction, where photoinduced hole state resides in HHTP ligand and electronic state is localized at the metal center. Moreover, the photoconductivity of the Cu−HHTP MOF is found to be 65.5 S m−1, which represents the record high photoconductivity for porous MOF materials based on catecholate ligands. [ABSTRACT FROM AUTHOR]

Metal–organic frameworks (MOFs) with mobile charges have attracted significant attention due to their potential applications in photoelectric devices, chemical resistance sensors, and catalysis. However, fundamental understanding of the charge transport pathway within the framework and the key properties that determine the performance of conductive MOFs in photoelectric devices remain underexplored. Herein, we report the mechanisms of photoinduced charge transport and electron dynamics in the conductive 2D M−HHTP (M=Cu, Zn or Cu/Zn mixed; HHTP=2,3,6,7,10,11‐hexahydroxytriphenylene) MOFs and their correlation with photoconductivity using the combination of time‐resolved terahertz spectroscopy, optical transient absorption spectroscopy, X‐ray transient absorption spectroscopy, and density functional theory (DFT) calculations. We identify the through‐space hole transport mechanism through the interlayer sheet π–π interaction, where photoinduced hole state resides in HHTP ligand and electronic state is localized at the metal center. Moreover, the photoconductivity of the Cu−HHTP MOF is found to be 65.5 S m−1, which represents the record high photoconductivity for porous MOF materials based on catecholate ligands. [ABSTRACT FROM AUTHOR]

The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed. [ABSTRACT FROM AUTHOR]

Integrated hierarchical microstructures composed of organic micro/nanocrystals with defined morphology have received great interest as candidates for advanced photonic circuits. Herein, the synthesis of highly ordered multilevel homogenous hyperbranched networks (HHNs) made of the individual organic compound 2, 3‐dicyanine naphthalene via a facile solution self‐assembly route is reported. The selective growth of branches on the sidewall of the backbone driven by the lattice match mechanism leads to the formation of higher‐level snowflake‐like configuration of the HHNs. These well‐organized HHNs perform excellent abilities of directional asymmetry photon transport and hierarchical polarization filtering. Combined with the doping strategy, the broad emission range of hyperbranched network heterostructures is expanded, and even the white light emission with Commission Internationale de L'Eclairage coordinates at (0.30, 0.33) is realized. This work provides deep insight into the rational creation of complex organic heterostructures for novel photoelectric devices with desired performances. [ABSTRACT FROM AUTHOR]

Afterglow materials are attracting widespread attention owing to their distinctive and long-lived optical emission properties which create exciting opportunities in various fields. Recent research has led to the discovery of many new afterglow materials featuring high photoluminescence quantum yields (PLQY) and lifetimes of up to several hours under ambient conditions. Afterglow materials are typically categorized according to their luminescence mechanism, such as long-persistent luminescence (LPL), room temperature phosphorescence (RTP), or thermally activated delayed fluorescence (TADF). Through rational design and novel synthetic strategies to modulate spin–orbit coupling (SOC) and populate triplet exciton states (T1), luminophores with long lifetimes and bright afterglow characteristics can be realized. Initial research towards afterglow materials focused mainly on pure inorganic materials, many of which possessed inherent disadvantages such as metal toxicity or low energy emissions. In recent years, organic–inorganic hybrid afterglow materials (OIHAMs) have been developed with high PLQY and long lifetimes. These hybrid materials exploit the tunable structure and easy processing of organic molecules, as well as enhanced SOC and intersystem crossing (ISC) processes involving heavy atom dopants, to achieve excellent afterglow performance. In this review, we begin by briefly discussing the structure and composition of inorganic and organic–inorganic hybrid afterglow materials, including strategies for regulating their lifetime, PLQY and luminescence wavelength. The specific advantages of organic–inorganic hybrid afterglow materials, including low manufacturing costs, diverse molecular/electronic structures, tunable structures and optical properties, and compatibility with a variety of substrates, are emphasized. Subsequently, we discuss in detail the fundamental mechanisms used by afterglow materials, their classification, design principles, and end applications (including sensing, anticounterfeiting, and photoelectric devices, among others). Finally, existing challenges and promising future directions are discussed, laying a platform for the design of afterglow materials for specific applications. [ABSTRACT FROM AUTHOR]

The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of the interface region of the anode metal AlCu and Si caused by high-temperature annealing at 150 ℃, 200 ℃ and 300 ℃ for 1200 h have been quantitatively analyzed. The study shows that the defect is located at the position of + 0.41 eV on the valence band, the concentration is 2.8 × 1013/cm2, and the capture cross section is σ = 8.5 × 1017. The impurity energy level mainly comes from the diffusion of Al atom in anode metal. We found that the defect did not cause the electrical performance degradation and obvious morphology change of the device, but the transient photocurrent increased significantly. The reason is that the high temperature treatment results in a growth in the density of states at the interface between AlCu–Si. The more mismatched dislocations and recombination center increased the reverse current of the heterojunction. The above view is proved by the TCAD simulation test. [ABSTRACT FROM AUTHOR]

The unremitting development of portable vertical jump equipment emphasizes the need for continual examination of its validity and reliability. Equal representation between sexes should be endorsed in this process to improve precision and application. This study aimed to examine the concurrent validity and reliability of the Exsurgo g-Flight™ photoelectric boxes and the Output Sports V2™ accelerometer for calculating vertical jump height when compared to a dual force plate system (Hawkin Dynamics Force Plate, ME, USA). Twenty (n = 20) female soccer players performed three counter movement jumps on two different sessions for a total of 120 jumps. Comparisons between the criterion method and secondary measures were performed using Bland–Altman plots and were independently examined using a paired samples t-test. Reliability in instrument error was determined by comparing the residuals of each secondary measure over two assessments. Bland–Altman plots revealed ≤ 5.0% of residuals for the accelerometer and photoelectric devices fell outside the limits of agreement. The accelerometer revealed a mean bias (95% CI) of 0.30 ± 0.33 cm, while the photoelectric device demonstrated a negative bias of −1.64 ± 0.45 cm. Mean (± SD) comparisons revealed an overestimation in jump height with the photoelectric device (1.6 ± 4.0 cm, p < 0.0001) and insignificant differences with the accelerometer (0.30 ± 3.7 cm, p > 0.05). Mean differences in residuals between testing dates for secondary measures were insignificant (p ≥ 0.23). Both the photoelectric and accelerometer instruments displayed high reliability, but differences in the accuracy between devices were observed. [ABSTRACT FROM AUTHOR]

Lead halide perovskites (LHPs) are emerging as promising candidates for use in various high-performance optoelectronic applications, yet their photophysics remains a topic of debate. Here, we theoretically investigated how the ultrafast optical properties of a few prototype LHPs are affected by many-body interactions, including the bandgap renormalization (BGR) effect, the band-filling (BF) effect, the free-carrier absorption effect, and the exciton effect, at carrier densities ranging from 1016 to 1019 cm−3. The results show that the exciton absorption becomes more obvious near the bandgap with increasing exciton energy (as the halogen component of the LHP is varied from I to Cl). Transient reflectivity results indicate that the signal has one peak below the bandgap as a result of the BGR effect at low carrier densities and one valley above the bandgap originating from the BF effect at high carrier densities. In addition, the absorbance decreases with increasing the carrier density as a result of the BF effect because the filled energy levels are observed at 2 meV above the bottom of the conduction band. The results of the present work are expected to promote the application of LHPs in solar cells, light-emitting diodes, and other photoelectric devices. [ABSTRACT FROM AUTHOR]

The development of an efficient fabrication route to achieve high‐resolution perovskite pixel array is key for large‐scale flexible image sensor devices. Herein, a high‐resolution and stable 10 × 10 flexible PDs array based on formamidinium(FA+) and phenylmethylammonium (PMA+) quasi‐2D (PMA)2FAPb2I7 (n = 2) perovskite is demonstrated by developing SiO2‐assisted hydrophobic and hydrophilic treatment process on polyethylene terephthalate substrate. By introducing Au nanoparticles (Au NPs), the perovskite film quality is improved and grain boundaries are reduced. The mechanism by which Au NPs upgrade the photoelectric quality of perovskite is mainly revealed by glow discharge‐optical emission spectroscopy (GD‐OES) and grazing‐incidence wide‐angle X‐ray scattering (GIWAXS). To further improve the photoelectric performance of the devices, a post‐treatment strategy with formamidinium chloride (FACl) is used. The optimized flexible PDs arrays show excellent optoelectronic properties with a high responsivity of 4.7 A W−1, a detectivity of 6.3 × 1012 Jones, and a broad spectral sensitivity. The device also exhibits excellent electrical stability even under severe bending and excellent flexural strength, as well as excellent environmental stability. Finally, the integrated flexible PDs arrays are used as sensor pixels in an imaging system to obtain high‐resolution imaging patterns, demonstrating the imaging capability of the PDs arrays. [ABSTRACT FROM AUTHOR]

In this paper, a plasmon resonance-enhanced narrow-band absorber based on the nano-resonant ring array of transparent conductive oxides (TCOs) is proposed and verified numerically. Due to the unique properties of TCOs, the structure achieves an ultra-narrowband perfect absorption by exhibiting a near-field enhancement effect. Consequently, we achieve a peak absorption rate of 99.94% at 792.2 nm. The simulation results indicate that the Full Width Half Maximum (FWHM) can be limited to within 8.8 nm. As a refractive index sensor, the device reaches a sensitivity S of 300 nm/RIU and a Figure of Merit (FOM) value of 34.1 1/RIU. By analyzing the distribution characteristics of the electromagnetic field at the 792.2 nm, we find high absorption with a narrow FWHM of the ITO nano-resonant ring (INRR) owing to plasmon resonance excited by the free carriers at the interface between the metal and the interior of the ITO. Additionally, the device exhibits polarization independence and maintains absorption rates above 90% even when the incident formed by the axis perpendicular to the film is greater than 13°. This study opens a new prospective channel for research into TCOs, which will increase the potential of compact photoelectric devices, such as optical sensing, narrowband filtering, non-radiative data transmission and biomolecular manipulation. [ABSTRACT FROM AUTHOR]

Given the tremendous interest in next-generation photoelectric conversion devices, such as tandem solar cells, indoor photoelectric conversion devices, and image sensors, the development of device-specific electron transport materials is essential for achieving high performance. Sn-based semiconductors are one of the edge materials with the potential to satisfy these requirements. In particular, ternary stannate compounds have shown high potential as electron transport electrodes in several impressive studies. However, systematic research on the electronic band structure and chemical bonding characteristics of these materials remains insufficient. In this study, we present the effect of cations on the crystal structure and electronic band structure of ternary stannate compounds, MSnO 3 (MSO, M = Ca, Sr, and Ba) and N 2 SnO 4 (N2SO, N = Ca, Sr, Ba, and Zn). Additionally, their potential as electron transport electrodes is verified by application in dye-sensitized solar cells (DSCs). Notably, although BaSnO 3 (BSO) and Zn 2 SnO 4 (Z2SO) had inferior dye adsorption properties, they exhibited higher overall performance in DSCs than the other stannate compounds. The origin of the excellent performances of BSO and Z2SO is attributed to their supportive electronic band features, including the lower flat-band potential and conduction band than that of the lowest unoccupied molecular orbital level of N719 dye and excellent charge transport property. This study highlights the decisive impact of the electronic band structure and charge transport ability of stannate compounds on the photoelectric conversion performance and provides design guidelines for developing new charge transport materials. [ABSTRACT FROM AUTHOR]

A cellulose conductor with biodegradability and renewability is a charming candidate to construct state-of-the-art electronic devices toward artificial intelligence and the Internet of things. However, the poor bonding between conductive materials and cellulose film, or high cost and complex processes for realizing the robustness (high stability of its conductivity) functions as the obvious defect, preventing the broad utilization of a cellulose conductor in advanced electronic devices. Herein, a solution-processable, robust, and scalable cellulose conductor with a high conductivity (15 Ω sq−1) and transmittance (85%) is developed via coating a blending starch and silver nanowires (AgNWs) on as-prepared cellulose film (namely, CSA film). In such a cellulose conductor, starch plays the natural "glue" to effectively fasten AgNWs on the cellulose film, which endows the desirable robustness to our CSA film. Despite robustness, more importantly, the CSA film features a promising recyclability via cellulose degradation to re-harvest the AgNWs, or by boiling CSA the film to independently separate the AgNWs and cellulose film, both of which are reused to produce a second CSA film with a conductivity of 18 Ω sq−1. The high performance allows the CSA film to construct advanced electronic devices, such as inorganic electroluminescent and organic light-emitting diode devices. Our starch-gluing–AgNW strategy paves the way for developing a robust yet green, recyclable cellulose conductor toward advanced electronic devices. [ABSTRACT FROM AUTHOR]

2D boron nitride shows great promise in the photoelectric device, deep UV emitter and field effect transistor with good thermal stability, high mechanical robustness and chemical inertness; nonetheless, its inherently low electrical conductivity and small pore size have severely hindered the electrochemical kinetics and lead to a poor rate capability. Herein, we design a novel porous 3D−B2N2 structure by assembling the orthorhombic B2N2 monolayer into t‐C24 lattice and assesse its feasibility as the anode material of sodium(SIBs)/potassium(PIBs) ion batteries. The ab initio molecular dynamics (AIMD) simulation, Born‐Huang criteria, phonon spectrum and cohesive energy calculations confirms that the resulting 3D−B2N2 possesses excellent mechanical, thermal and dynamical stability. Different from the pristine h‐B2N2, an improved electrical conductivity is observed for 3D−B2N2 with a small band gap of 0.66 eV. Moreover, the low mass density, unique porous structure and strong adsorption energy make the 3D−B2N2 an outstanding electrode material for SIBs/PIBs with high storage capacities of 599.90 (479.92) mA h/g, low averaged open circuit voltages of 0.13 (0.27) V, low diffusion barriers of 0.04 (0.008) eV, and small volume expansions of 0.96 % (2.63 %). All the encouraging findings reveal that the 3D−B2N2 anode deserves further experimental investigation for SIBs/PIBs. [ABSTRACT FROM AUTHOR]

The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of the interface region of the anode metal AlCu and Si caused by high-temperature annealing at 150 ℃, 200 ℃ and 300 ℃ for 1200 h have been quantitatively analyzed. The study shows that the defect is located at the position of + 0.41 eV on the valence band, the concentration is 2.8 × 1013/cm2, and the capture cross section is σ = 8.5 × 1017. The impurity energy level mainly comes from the diffusion of Al atom in anode metal. We found that the defect did not cause the electrical performance degradation and obvious morphology change of the device, but the transient photocurrent increased significantly. The reason is that the high temperature treatment results in a growth in the density of states at the interface between AlCu–Si. The more mismatched dislocations and recombination center increased the reverse current of the heterojunction. The above view is proved by the TCAD simulation test. [ABSTRACT FROM AUTHOR]

Low reflectivity is of great significance to photoelectric devices, optical displays, solar cells, photocatalysis and other fields. In this paper, vanadium oxide is deposited on pattern SiO2 via atomic layer deposition and then annealed to characterize and analyze the anti-reflection effect. Scanning electron microscope (SEM) images indicate that the as-deposited VOx film has the advantages of uniformity and controllability. After annealing treatment, the VO2@pattern SiO2 has fewer crevices compared with VO2 on the accompanied planar SiO2 substrate. Raman results show that there is tiny homogeneous stress in the VO2 deposited on pattern SiO2, which dilutes the shrinkage behavior of the crystallization process. The optical reflection spectra indicate that the as-deposited VOx@pattern SiO2 has an anti-reflection effect due to the combined mechanism of the trapping effect and the effective medium theory. After annealing treatment, the weighted average reflectance diminished to 1.46% in the visible near-infrared wavelength range of 650–1355 nm, in which the absolute reflectance is less than 2%. Due to the multiple scattering effect caused by the tiny cracks generated through annealing, the anti-reflection effect of VO2@pattern SiO2 is superior to that of VOx@pattern SiO2. The ultra-low reflection frequency domain amounts to 705 nm, and the lowest absolute reflectance emerges at 1000 nm with an astonishing value of 0.86%. The prepared anti-reflective materials have significant application prospects in the field of intelligent optoelectronic devices due to the controllability of atomic layer deposition (ALD) and phase transition characteristics of VO2. [ABSTRACT FROM AUTHOR]

Neuromorphic computing can efficiently handle data‐intensive tasks and address the redundant interaction required by von Neumann architectures. Synaptic devices are essential components for neuromorphic computation. 2D phosphorene, such as violet phosphorene, show great potential in optoelectronics due to their strong light‐matter interactions, while current research is mainly focused on synthesis and characterization, its application in photoelectric devices is vacant. Here, the authors combined violet phosphorene and molybdenum disulfide to demonstrate an optoelectronic synapse with a light‐to‐dark ratio of 106, benefiting from a significant threshold shift due to charge transfer and trapping in the heterostructure. Remarkable synaptic properties are demonstrated, including a dynamic range (DR) of > 60 dB, 128 (7‐bit) distinguishable conductance states, electro‐optical dependent plasticity, short‐term paired‐pulse facilitation, and long‐term potentiation/depression. Thanks to the excellent DR and multi‐states, high‐precision image classification with accuracies of 95.23% and 79.65% is achieved for the MNIST and complex Fashion‐MNIST datasets, which is close to the ideal device (95.47%, 79.95%). This work opens the way for the use of emerging phosphorene in optoelectronics and provides a new strategy for building synaptic devices for high‐precision neuromorphic computing. [ABSTRACT FROM AUTHOR]

The two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 (LAO/STO) interface exhibits many emergent properties, such as high mobility, giant photoconductivity, the light-enhanced gating effect, etc., which are invaluable for basic research and potential applications. In this work, we report an unusual enhancement of persistent photoconductivity (PPC) by electrostatic gating (EG) at the LAO/STO interface. Under the influence of pre-EG processing, the 2DEG at the LAO/STO interface is triggered into a resistance state showing a more pronounced optical response and greatly enhanced PPC under light illumination (LI) at room temperature. These observations are found to be attributed to EG-induced interfacial polarization and the subsequent LI-accelerated depolarization at the interface. Based on these findings, a nonvolatile memory device made by this interface is proposed. Our work offers a new perspective for tuning the photoelectrical properties at the oxide interface, which is helpful for designing advanced photoelectric devices with high performance and multifunctionality. [ABSTRACT FROM AUTHOR]

Wide bandgap β-Ga2O3 is an ideal candidate material with broad application prospects for power electronic components in the future. Aiming at the application requirements of β-Ga2O3 in space photoelectric devices, this work studies the influence of 40 MeV Si ion irradiation on the microstructure and optical properties of β-Ga2O3 epi-wafers. Raman spectroscopy analysis confirms that Si ion irradiation destroys the symmetric stretching mode of tetrahedral–octahedral chains in β-Ga2O3 epi-wafers, and the obtained experimental evidence of irradiation leads to the enhanced defect density of VO and VGa–VO from x-ray photoelectron spectroscopy. Combined with first-principles calculations, we conclude that most configurations of VO and VGa–VO are likely non-radiative, leading to quenching of experimental photoluminescence intensity. Unraveling optical degradation mechanism and predicting the optical application of β-Ga2O3 devices in the space environment by combining ground irradiation experiments with first-principles calculations still be one of the focuses of research in the future. [ABSTRACT FROM AUTHOR]

A co‐crystal FJU‐182 with a closed cage structure with photochromic phenomenon was formed using a tetraphenylene derivatives 4,4′,4′′,4′′′‐(anthracene‐9,10‐diylidenebis(methanediyl‐ylidene))tetrabenzoic acid self‐assembled with 1,3‐di(4‐pyridyl)propane in a solvent. It was also found that isomorphic crystals grown from different solvents exhibited different fluorescence. The electron paramagnetic resonance and X‐ray photoelectron spectroscopy data showed that the photochromic mechanism of crystal FJU‐182 was due to photoinduced electron transfer, while the different color change of crystals grown from different solvents was attributed to the size of solvent molecules. The I−V curves of the crystals FJU‐182 before and after illumination were also tested, and it was found that the conductivity of the crystals before the color change would be 3–8 times higher than the conductivity of the crystals after the color development. FJU‐182 provides a new case for electrochemical devices with photoelectric response. [ABSTRACT FROM AUTHOR]

In the preparationand storage of grains, seed cleaning is a highly important phase. There has been extensive research regarding the cleaning and classifying grains. The grain seeds are usually contaminated right from the harvest with the seeds from other plants, with other materials (soil, plant residues, etc.) or even with their own degraded seeds. Since they are the same size and weight, they are difficult to be sorted mechanically. The degree of seed purity may be significantly increased by optical sorting after dedusting and mechanical sorting. The separation of seed mixtures by colour is achieved by using photoelectric devices, which, being sensitive to differences in the intensity of the reflected light beam, emit pulses that are used to carry out orders to separate the seeds of the wrong color. This article emphasizes the importance of introducing new or innovative methods in the seed separation process, especially optical systems. Various ways of sorting were discussed, the design of super interesting sorting systems. [ABSTRACT FROM AUTHOR]