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This paper provides a comprehensive study of the impact of the gate recess depth (RD) on the GaN-on-Si MOS-HEMTs DC performances. IDS = f(VGS) and IDS = f(VDS) measurements are conducted at 25 and 150 °C, respectively, in forward and blocking modes. The gate recessed depth (50, 150, and 350 nm) is modulated by adjusting the plasma etching time, which is a critical step for improving the dielectric/GaN interface quality and the gate channel electron mobility. Three distinct regions can be defined separately: the bottom, the sidewall, and the corner region being the junction between the two previous regions. To assess the impact of gate recessed depth (RD) on the several mobilities around the gate cavity first, we applied our previous methodology allowing us to extract the bottom (μbot) and the entire sidewall region mobility (μT), without distinction from the corner. The mobility of the transverse region was found surprisingly to increase with deeper RD. To gain insight into the impact of the RD on this transverse section, a new extraction methodology is proposed to extract separately the gate corner (μcorner) and sidewall (μSW) mobility. These extractions show that the corner mobility is found to be reduced compared to the sidewall one (μcorner < μSW) evidencing the different weighting contributions over the transverse mobility. Moreover, these mobilities are found to be more degraded compared to the bottom one, highlighting the different contributions on the on-state resistance (RON). Indeed, the on-state resistance is lowered with the shallower RD due to the reduced sidewall resistance contribution (lower sidewall length) and despite the incremental contribution of the bottom resistance (larger effective gate length). However, the shallower RD shows an increase in the drain–source leakage current in reason of a lower gate electrostatic control. Technology Computer Aided Design (TCAD) simulations of the three RD morphologies are carried out to validate the experimental trends and the proposed methodology. [ABSTRACT FROM AUTHOR]

Atmospheric plasma etching (APE) has been used to texture Si surfaces due to anisotropic material removal capability. Controlling features and size of the light-trapping structure are keys to improving the reflection performance of silicon (Si) solar cells, which need to fully understand the interfacial etching behavior and the microscopic topography formation mechanism of the Si surface. In this study, microwave plasma with a temperature below 100 °C is employed to investigate the dependence of microstructure evolution on the O/F atom ratios in plasma. The results show that as the O/F atom ratios increase, the microstructure of the Si surface changes from square opening pits to spherical opening pits. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses indicate that the exciting F atoms dominate the orientation-selective etching process, causing the formation of square opening pits. The CFx and C2 radicals induce the generation of the Si interface reactive layer, resulting in the occurrence of amorphous layers and termination of the non ⟨111⟩-crystal face in APE. The exciting O atoms preferentially occupy the active site of Si surfaces, causing the isotropic etching and then the formation of spherical opening pits. In addition, the richer O atoms will weaken the anisotropic etching ability of F atoms, resulting in the etched surface trends' flattening. The insight into anisotropic etching behavior and topography formation mechanism of the silicon surface textured by atmospheric plasma is valuable for developing a new texturing approach to silicon solar cells. [ABSTRACT FROM AUTHOR]

We report on efforts to improve the speed of low-G far-infrared transition-edged-sensed bolometers. We use a fabrication process that does not require any dry etch steps to reduce heat capacity on the suspended device and measure a reduction in the detector time constant. However, we also measure an increase in the temperature-normalized thermal conductance (G) and a corresponding increase in the noise-equivalent power (NEP). We employ a new near-IR photon-noise technique using a near-IR laser to calibrate the frequency-domain multiplexed AC system and compare the results to a well-understood DC circuit. We measure an NEP white noise level of 0.8 aW/rtHz with a 1/f knee below 0.1 Hz and a time constant of 3.2 ms. [ABSTRACT FROM AUTHOR]

The increasing demand for More than Moore devices requires epitaxy technology to keep up with the discovery and deployment of new semiconductors. An emerging technology for cost-effective, device-quality growth is magnetron sputter epitaxy, though detailed studies on the process itself remain scarce. Here, we report an extensive study on the correlation between the substrate off-cut and film quality in AlN-on-Si heteroepitaxy. Controlled reactive pulsed magnetron sputtering is used to grow epitaxial AlN(0001) films on in situ Ar plasma etched off-cut Si(111) substrates with growth rates above 1.5 nm/s. Substrate off-cut angles in the range of 0.02°–0.30° are investigated and precisely determined by high-resolution x-ray diffraction. Structural examination of the AlN films is carried out by transmission electron microscopy and high-resolution x-ray diffraction. The AlN/Si interface is well-defined and two types of AlN domains with epitaxial relationships are observed. The formation of secondary rotation domains deteriorates the crystal quality substantially. Substrates with small off-cuts, ideally no off-cut substrates, appear to be crucial for suppressing the formation of secondary domains and further result in a better overall crystal quality of AlN films. We discuss this effect in relation to the AlN/Si interface, the substrate pre-treatment, and nucleation. [ABSTRACT FROM AUTHOR]

In this paper, we report the use of three pendeo-epitaxy growth approaches as a way of reducing the threading dislocation density (TDD) of 20 × 20 μm2 GaN platelets to be used for the development of micro light-emitting diodes (μLEDs). The method relies on the coalescence of GaN crystallites grown on top of a network of deformable pillars etched into a silicon-on-insulator substrate. Our approach takes advantage of the creeping properties of SiO2 at the usual GaN epitaxial growth temperature, allowing the GaN crystallites to align and reduce the grain boundary dislocations. Furthermore, this bottom-up approach allows to get rid of the dry plasma etching step for μLEDs fabrication, which highly deteriorates sidewalls, reducing the efficiency of future displays. By optimizing the growth conditions and inducing asymmetric nucleation, a TDD of 2.5 × 108 cm−2 has been achieved on the GaN platelets, while keeping a smooth surface. [ABSTRACT FROM AUTHOR]

For the wafer-scale fabrication of diamond devices, the growth of diamond substrates by heteroepitaxial chemical vapor deposition is the most promising option currently available. However, the transfer of growth and also structuring processes from small homoepitaxial to larger heteroepitaxial samples is not straightforward and requires adaptation. In this study, we present an approach for the fabrication of functional microstructures including pyramids and mesas as well as more complex structures with hollow centers. The associated methods were previously demonstrated by homoepitaxial growth and are now evaluated on heteroepitaxially grown diamond films. After optimizing the growth procedures to ensure a sufficient quality of the bare diamond substrates, precursor structures for overgrowth were fabricated by e-beam lithography and plasma etching. In the overgrowth of nanopillars, a truncated pyramidal shape was achieved. The characterization with scanning electron microscopy revealed the growth of higher-index facets. Nevertheless, photoluminescence spectroscopy reveals localized doping on the sides of the microstructures. In addition, optically detected magnetic resonance reaches a contrast of 6 % of one preferred nitrogen vacancy orientation per facet and a transverse relaxation time T 2 ∗ of 96 ns. [ABSTRACT FROM AUTHOR]

Quartz is a widely used material in the field of microelectromechanical systems (MEMS) for fabricating devices such as substrates, probes, and lenses; it is also indispensable as a resonator or oscillator for frequency control in communication and network technologies. However, its development is limited because it is difficult to fabricate an ideal profile for implementation in complex structures. In practice, wet etching is the most effective and extensive method for achieving the expected structure, although dry etching and other special machining techniques have also been investigated. In this study, the dynamic wet etching process was recorded using different ratios of buffered oxide etcher (BOE) solutions as the etchant to reveal the etching mechanism. The experiments were first designed considering the fabrication of samples, experimental conditions, and measurement indicators. Subsequently, the corresponding etch rate, roughness, and surface morphology were investigated to control the process parameters during wet etching. Different etchants exhibit varying etching rates and roughness properties. A smaller proportion of hydrofluoric acid in the BOE solution results in lower etch rate, and vice versa. The roughness (Ra) in the stable stage was not completely consistent with the tendency of the etch rate, whereas the surface morphology and dimensions of the pyramids rationally complied with the roughness trend. Additionally, the results suggested that the three following stages exist during the wet etching process of the z-cut α-quartz wafer; smooth, incremental, and stable. The analysis of the dynamic wet etching process in this study is beneficial for the structural design, manufacturing, and performance of quartz MEMS devices. [ABSTRACT FROM AUTHOR]

Single-crystal SiC nanoporous structure has important applications in the field of micro electromechanical systems, chemical sensors and biomedical devices. However, SiC exhibits a strong chemical inertness due to the short interatomic distance and high binding energy, making it significantly challenging to fabricate nanoporous structure. Electrolytic plasma-assisted chemical etching (EPACE) based on electrochemical anodic oxidation and high-activity electrolytic plasma etching is an ideal method for SiC nanoporous structure etching. In which, the spatial distribution of electrolytic plasma has an important impact on EPACE performance, such as etching efficiency and stability. In order to analyze the impact mechanism, this paper studies EPACE in tool electrode mounting posture of vertical and horizontal types by visual observation, real-time recording of voltage-current waveforms during processing, and the morphology analysis of SiC nanoporous structure after etching. It can be found that in the vertical etching type, EPACE can proceed stably because the workpiece immersion depth is greater than the bubble accumulation thickness. However, in the horizontal etching type, bubbles accumulate seriously between the workpiece and the liquid surface, which may cause bubble cavitation and abnormal discharge, leading to damage to the etching surface. The etching current in the vertical etching type is about 1.3 times that of the horizontal etching type, indicating that the bubble mass transfer in the vertical etching type is faster and the etching impedance is smaller, which is beneficial to improve the etching efficiency and obtain a uniform nanoporous structure. Finally, a SiC nanoporous layer with a thickness of 10.6 μm was prepared at etching time t = 50 min in vertical etching type, and the etching efficiency was 212 nm/min. In addition, the prepared nanoporous structure (nanofiber) was connected to the SiC substrate, indicating that it has a good bonding strength. [ABSTRACT FROM AUTHOR]

Oxygen vacancies and heteroatom doping play important role in oxygen reduction activity of metal oxides. Developing efficient modification method is one of the key issues in catalysts research. Room temperature plasma treatment, with the advantages of mild working conditions, no emissions and high efficiency, is a new catalyst modification method developed in recent years. In this work, hydrothermal synthesized α -MnO2 nanorods are treated in NH3 plasma at room temperature. In the reducing atmosphere, oxygen vacancies and N doping are achieved simultaneously on the surface. The NH3 plasma etched MnO2 demonstrate a significant enhanced oxygen reduction activity with half-wave potential of 0.84 V, limiting current density of 6.32 mA cm−2 and transferred electrons number of 3.9. The Mg–air battery with N-MnO2 display a maximum power density of 76.3 mW cm−2 as well as stable discharge performance. This work provides new ideas for preparing efficient and cost-effective method to boost the catalysts activity. [ABSTRACT FROM AUTHOR]

High-purity, nano-sized (Ti 0.2 Zr 0.2 Nb 0.2 Mo 0.2 Hf 0.2)B 2 (TZNMH) diboride powders were successfully synthesized via a combined flocculation precipitation and boro/carbothermal reduction method. Then, the solid solution formation, thermal radiation performance and mechanical properties of TZNMH were investigated. It is found that high entropy effect endows TZNMH ceramic with outstanding near-blackbody radiation performance in the UV-Vis-NIR region, with a thermal emissivity ≥ 95%. This is because high entropy induces robust intraband transition. A dense and single-phase TZNMH ceramic was obtained by spark plasma sintering with high hardness (HV 0.1 =31.6 GPa) which remained above 30 GPa even after 60 h exposure at 1800 °C in Ar environment. This high hardness of TZNMH ceramic is believed to arise from the strong hybridization between metals and boron, as revealed by density functional theory calculations. This study demonstrates that high-entropy boride ceramics can be used as ideal high-temperature structural component with high thermal emissivity. [ABSTRACT FROM AUTHOR]

Antireflection surfaces are widely used in optical devices (such as vehicle display, solar cells, and architectural glass) to reduce the reflection and increase transmittance. Plasma etching shows great potential in making subwavelength antireflection structures for its advantage of scalable, low‐cost, and applicable in flexible substrates. Here, we demonstrate an antireflection nanostructure by O2 plasma etching on poly (ethylene terephthalate) (PET) substrate without additional corrosive gas species or antireflective coatings. Nanopores on the surface were formed due to the different etching rates of the organic region and silica region of the surface. The solar weighted average transmittance was improved from 91.6% to 94.8% for single‐side treated PET with silica antiblocking layer. The transmission increment was attributed to the gradient refractive index of the nanostructured surface due to the elimination of step discontinuity in refractive index. The result shows a highly efficient, eco‐friendly, solvent‐free, economical, and sputtering target‐free method for reducing the reflection and increasing the transmittance of the substrates. [ABSTRACT FROM AUTHOR]

This work utilizes defect engineering, heterostructure, pyridine N‐doping, and carbon supporting to enhance cobalt‐nickel selenide microspheres' performance in the oxygen electrode reaction. Specifically, microspheres mainly composed of CoNiSe2 and Co9Se8 heterojunction rich in selenium vacancies (VSe·) wrapped with nitrogen‐doped carbon nanotubes (p‐CoNiSe/NCNT@CC) are prepared by Ar/NH3 radio frequency plasma etching technique. The synthesized p‐CoNiSe/NCNT@CC shows high oxygen reduction reaction (ORR) performance (half‐wave potential (E1/2) = 0.878 V and limiting current density (JL) = 21.88 mA cm−2). The JL exceeds the 20 wt% Pt/C (19.34 mA cm−2) and the E1/2 is close to the 20 wt% Pt/C (0.881 V). It also possesses excellent oxygen evolution reaction (OER) performance (overpotential of 324 mV@10 mA cm−2), which even exceeds that of the commercial RuO2 (427 mV@10 mA cm−2). The density functional theory calculation indicates that the enhancement of ORR performance is attributed to the synergistic effect of plasma‐induced VSe· and the CoNiSe2‐Co9Se8 heterojunction. The p‐CoNiSe/NCNT@CC electrode assembled Zinc‐air batteries (ZABs) show a peak power density of 138.29 mW cm−2, outperforming the 20 wt% Pt/C+RuO2 (73.9 mW cm−2) and other recently reported catalysts. Furthermore, all‐solid‐state ZAB delivers a high peak power density of 64.83 mW cm−2 and ultra‐robust cycling stability even under bending. [ABSTRACT FROM AUTHOR]

Contact‐electrification at solid–liquid interfaces (SL‐CE) and contact‐electro‐catalysis (CEC) are two blooming research areas with promising applications in sustainable energy, sensing, and chemical processes. However, prior research has neglected the impact of electronic defects on the ability of high‐performance tribo‐materials, like fluorinated polymers, to perform SL‐CE/CEC. Here, through first‐principle calculations, the addition of surface functional groups to fluorinated ethylene propylene (FEP) enables the tuning of its molecular orbitals' positions, and displacing deep‐level defect states from the HOMO‐LUMO gap is shown. Thereafter, FEP films are modified accordingly by plasma etching; resulting in a significant performance improvement of up to 202% (charge) in SL‐CE experiments, and up to 398% (kinetic rate) in CEC dye degradation. This study provides a theoretical and experimental framework to design high‐performance materials for SL‐CE and CEC, and insights into their physical mechanisms and defect passivation, which are all fundamental for the advancement of these fields. [ABSTRACT FROM AUTHOR]

Manufacturing semiconductor devices requires advanced patterning technologies, including reactive ion etching (RIE) based on the synergistic interactions between ions and etch gas. However, these interactions weaken as devices continuously scale down to sub‐nanoscale, primarily attributed to the diminished transport of radicals and ions into the small features. This leads to a significant decrease in etch rate (ER). Here, a novel synergistic interaction involving ions, surface‐adsorbed chemistries, and materials at cryogenic temperatures is found to exhibit a significant increase in the ER of SiO2 using CF4/H2 plasmas. The ER increases twofold when plasma with H2/(CF4 + H2) = 33% is used and the substrate temperature is lowered from 20 to −60 °C. The adsorption of HF and H2O on the SiO2 surface at cryogenic temperatures is confirmed using in situ Fourier transform infrared spectroscopy. The synergistic interactions of the surface‐adsorbed HF/H2O as etching catalysts and plasma species result in the ER enhancement. Therefore, a mechanism called “pseudo‐wet plasma etching” is proposed to explain the cryogenic etching process. This synergy demonstrates that the enhanced etch process is determined by the surface interactions between ions, surface‐adsorbed chemistry, and the material being etched, rather than interactions between ion and gas phase, as observed in the conventional RIE. [ABSTRACT FROM AUTHOR]

Diamond Schottky barrier diodes (SBDs) could theoretically operate at high voltage, high temperature, and high frequency and be potentially used in power electronics. However, the device breaks down prematurely and cannot operate stably at high voltages due to the edge electric field crowding. In this work, a vertical diamond SBD with a curved field plate (CFP) was prepared using a chemical reflow method, inductively coupled plasma etching, and electron-beam evaporation. This structure alleviates the electric field crowding at the edge of the Schottky electrode and results in a breakdown voltage and current density of 380 V and over 3000 A/cm2, respectively. After repetitive measurements, we found that the device can repeatedly breakdown at around 380 V. These results indicate that CFP structure diamond SBDs have great application in high-voltage and high-power electronic devices. [ABSTRACT FROM AUTHOR]

We investigated the optimization effects of KOH solution treatment and SiN x sacrificial layer treatment on the contact characteristics of V/Al/Ni/Au on plasma-etched n-AlGaN. The results showed that the contacts on n-Al0.5Ga0.5N with both surface treatments are truly Ohmic in nature, while the contacts on untreated plasma-etched samples are still rectifying. Surface atomic concentration analysis revealed that both surface treatment methods effectively reduced the nitrogen vacancies on n-AlGaN induced by plasma etching, which mostly act as acceptor-like states, leading to severe compensation and hindering of the formation of Ohmic contact. Moreover, the operating voltage was reduced by 0.9 V at 20 mA for 285 nm ultraviolet light-emitting diodes, demonstrating that the surface treatment could work well for plasma-etched n-AlGaN Ohmic contacts. [ABSTRACT FROM AUTHOR]

This article discusses a method for forming black silicon using plasma etching at a sample temperature range from −20 °C to +20 °C in a mixture of oxygen and sulfur hexafluoride. The surface morphology of the resulting structures, the autocorrelation function of surface features, and reflectivity were studied depending on the process parameters—the composition of the plasma mixture, temperature and other discharge parameters (radical concentrations). The relationship between these parameters and the concentrations of oxygen and fluorine radicals in plasma is shown. A novel approach has been studied to reduce the reflectance using conformal bilayer dielectric coatings deposited by atomic layer deposition. The reflectivity of the resulting black silicon was studied in a wide spectral range from 400 to 900 nm. As a result of the research, technologies for creating black silicon on silicon wafers with a diameter of 200 mm have been proposed, and the structure formation process takes no more than 5 min. The resulting structures are an example of the self-formation of nanostructures due to anisotropic etching in a gas discharge plasma. This material has high mechanical, chemical and thermal stability and can be used as an antireflective coating, in structures requiring a developed surface—photovoltaics, supercapacitors, catalysts, and antibacterial surfaces. [ABSTRACT FROM AUTHOR]

In this paper, we demonstrate a comprehensive study of NF3-based selective etching processes for inner spacer formation and for channel release, enabling stacked horizontal gate-all-around Si nanosheet transistor architectures. A cyclic etching process consisting of an oxidation treatment step and an etching step is proposed and used for SiGe selective etching. The cyclic etching process exhibits a slower etching rate and higher etching selectivity compared to the direct etching process. The cycle etching process consisting of Recipe 1, which has a SiGe etching rate of 0.98 nm/cycle, is used for the cavity etch. The process achieved good interlayer uniformity of cavity depth (cavity depth ≤ 5 ± 0.3 nm), while also obtaining a near-ideal rectangular SiGe etch front shape (inner spacer shape = 0.84) and little Si loss (0.44 nm@ each side). The cycle etching process consisting of Recipe 4 with extremely high etching selectivity is used for channel release. The process realizes the channel release of nanosheets with a multi-width from 30 nm to 80 nm with little Si loss. In addition, a selective isotropic etching process using NF3/O2/Ar gas mixture is used to etch back the SiN film. The impact of the O2/NF3 ratio on the etching selectivity of SiN to Si and the surface roughness of SiN after etching is investigated. With the introduction of O2 into NF3/Ar discharge, the selectivity increases sharply, but when the ratio of O2/NF3 is up to 1.0, the selectivity tends to a constant value and the surface roughness of SiN increases rapidly. The optimal parameter is O2/NF3 = 0.5, resulting in a selectivity of 5.4 and a roughness of 0.19 nm. [ABSTRACT FROM AUTHOR]

Mid-wavelength infrared HgCdTe electron-initiated avalanche photodiodes (e-APDs) have presented excellent performances on resolving and counting photons. Aiming at low flux, the readout integrated circuit noise can be significantly reduced by certain device gain, and very low excess noise of HgCdTe e-APDs gives the opportunity for noise equivalent photon (NEPh) to be 1. Therefore, the main issue for signal-to-noise ratio of HgCdTe APD is gain normalized dark current density (GNDCD) at high reverse bias. In this work, the electric field distribution is optimized by designing the mesa device structure to suppress the tunneling current at high operating voltage. Furthermore, etching technology combining dry etching and wet etching and passivation technology based on plasma enhanced atomic layer deposition were used to reduce surface leakage current. Finally, 20 μm pitch 128 × 128 array HgCdTe APDs for cutoff wavelength 4.32 μm at 80 K corresponding to compositions xCd = 0.326 were fabricated, the measured GNDCD of the test unit is about 1.5–10 × 10−9 A/cm2 at 0–13 V, and very low excess noise guaranteed the NEPh to be 2.0 at gain = 93 and 1.6 at gain = 193. [ABSTRACT FROM AUTHOR]

The PDA/PEI modification technology is commonly employed to improve the resistance to membrane fouling of polymeric membranes used in the treatment of oily wastewater. Nevertheless, the surface characteristics of membrane materials frequently restrict the implementation of the modification technique in terms of both the amount and speed of deposition. The hydrophobic membranes, such as PVDF and PTFE, have a surface with very low surface free energy and only inert functional groups. This surface is not suitable for the deposition of PDA/PEI. This study utilized plasma etching treatment to break the C–H and C–F bonds on the surface of the PVDF membrane, resulting in the introduction of oxygen-containing functional groups. During the deposition process, the PDA/PEI exhibited a tendency to chemically connect to material surfaces that included oxygen-containing functional groups, such as –OH, by processes such as hydrogen bonding. During the modification procedure, the etched membrane experienced an increase in the mass of PDA/PEI deposition and the strength of interfacial bonding. As a result, the modified membrane acquired improved hydrophilicity and anti-fouling performance. In summary, this study offers useful insights for improving the surface properties of hydrophobic polymeric membranes to prevent membrane fouling. [ABSTRACT FROM AUTHOR]

The influence of tetraethyl orthosilicate (TEOS) on the plasma etching behavior of yttrium aluminum garnet (Y3Al5O12, yttrium aluminum garnet [YAG]) was systematically studied. Dense YAG bulk specimens were hot‐press sintered at a relatively low temperature of 1450°C for 2 h under 20 MPa, using TEOS as a sintering additive. The etching properties of YAG ceramics, doped with different TEOS contents, were evaluated using an inductively coupled plasma etcher with an incident plasma power of 1500 W for up to 2 h. It was observed that the addition of .3 wt.% TEOS optimally reduced the surface roughness of YAG ceramics post‐plasma etching. Transmission electron microscopy and X‐ray fluorescence tests clarified that a densification‐promoting TEOS‐induced residual Si‐rich phase at the triple junction for the over‐doped TEOS (≥.5 wt.%) specimen acts as a pit‐initiation site during plasma etching, which eventually results in increased surface roughness. [ABSTRACT FROM AUTHOR]

A good integration of the polymer materials that form a mixed-matrix membrane (MMM) for gas separation is essential to reaching interesting permselective properties. In this work, a porous polymer network (PPN), obtained by combining triptycene and trifluoroacetophenone, has been used as a filler, which was blended with two o-hydroxypolyamides (HPAs) that act as polymer matrices. These polymer matrices have been thermally treated to induce a thermal rearrangement (TR) of the HPAs to polybenzoxazoles (β-TR-PBOs) through a solid-state reaction. For its structural study, various techniques have been proposed that allow us to undertake a morphological investigation into the integration of these materials. To access the internal structure of the MMMs, three different methods were used: a polishing process for the material surface, the partial dissolution of the polymer matrix, or argon plasma etching. The argon plasma technique has not only revealed its potential to visualize the internal structure of these materials; it has also been proven to allow for the transformation of their permselective properties. Force modulation and phase contrast in lift-mode techniques, along with the topographic images obtained via the tapping mode using a scanning probe microscope (SPM), have allowed us to study the distribution of the filler particles and the interaction of the polymer and the filler. The morphological information obtained via SPM, along with that of other more commonly used techniques (SEM, TGA, DSC, FTIR, WASX, gas adsorption, and permeability measurements), has allowed us to postulate the most probable structural configuration in this type of system. [ABSTRACT FROM AUTHOR]

The fault detection and classification (FDC) modeling proposed in this study is a research approach that is intended to improve the performance of plasma process models by leveraging optical emission spectroscopy (OES) data containing plasma information (PI) and enhancing model interpretability using explainable artificial intelligence (XAI) algorithms. Status variable identification data that included normal and abnormal states of bias power, pressure, SF6 gas flow, and O2 gas flow were collected during a silicon etching process with SF6, O2 gas plasma. Additional variables were derived from the OES data and included additional PI, such as O and F radicals, which were computed using actinometry, and electron temperature and electron density computed using the line ratio method. By building a high-performance FDC model and interpreting its results using XAI algorithms, we propose solutions to the limitations of the FDC model in semiconductor plasma processes. [ABSTRACT FROM AUTHOR]

The effects of Al-excess nonstoichiometry on the densification and plasma etching behavior of yttrium aluminum garnet (Y 3 Al 5 O 12 , YAG) were investigated. Al-excess composition driven by Al 2 O 3 debris introduced during Al 2 O 3 ball milling can promote the densification of YAG ceramics. This hypothesis was proved by using Al 2 O 3 powder as an additive to YAG powder. It was verified that Al-excess nonstoichiometry designed by the addition of excess Al 2 O 3 powder resulted in increased densification of YAG ceramics. At 1450 °C for sintering, the relative density of YAG ceramics increases from 98.58 % to 99.88 % with the addition of Al 2 O 3 from 0 to 0.512 wt%. However, above 0.342 wt% concentration, Al 2 O 3 was prepcipated in the YAG matrix, degrading the etching resistance. The optimum balance between the density and plasma etching resistance of YAG ceramics for application in a plasma environment was realized by adding 0.171 wt% of excess Al 2 O 3. The density and surface roughness (Ra) of YAG ceramic after etching are 99.61 % and 17.6 nm, respectively. [ABSTRACT FROM AUTHOR]

The changes in the etching rate and surface microstructure of sintered Al 2 O 3 , Y 2 O 3 , and yttrium aluminum garnet (YAG) ceramics were investigated in high-power plasma. Specimens with four relative densities (75, 95, 99, and 100 %) were plasma-etched under three conditions at CF 4 /Ar gas ratios of 4, 0.25, and 0. Consequently, when the CF 4 concentration was nonzero, the etching rates of Y 2 O 3 and YAG were similar and much lower than that of Al 2 O 3. However, when the CF 4 concentration was zero, the etch rate of Al 2 O 3 was the lowest. The etching rates of Y 2 O 3 and YAG were not significantly affected by the absence of CF 4 ; however, the etching rate of Al 2 O 3 decreased sharply in the absence of CF 4. For all the materials, an inverse relationship between density and etching rate was observed. Numerous craters were observed in the surface microstructures of all tested specimens, except for sapphire. It was observed that the lower the density (the more pores), the more craters. Moreover, the effects of craters on the etching rate and peculiar etching behavior of Al 2 O 3 were also discussed. [ABSTRACT FROM AUTHOR]

The honeycomb pattern possesses a distinctive hexagonal structure capable of seamless repetition on a flat surface, leaving no gaps. Moreover, all arm thicknesses and angles are equal to one another. This remarkable configuration is deemed biomimetic, with numerous examples found in nature. Notably, it exhibits remarkably low density and exceptional mechanical strength. MAX phase films have gathered significant attention due to their exceptional capacity to amalgamate the essential properties of both metals and ceramics. Additionally, they possess the unique ability to effectively mend surface cracks that may arise as a result of friction-wear, restoring the material to a certain degree of integrity. In this study, Ti2AlN MAX phase thin films were deposited on M2 steel substrates by a closed field unbalanced magnetron sputtering system (CFUBMS). 750 °C heat treatment was applied to obtain the produced films in crystalline form. In addition, plasma etching parameters suitable for the phase structure of the deposited film were determined. With the inductive coupling plasma etching (ICP) process, the honeycomb pattern was given to the Ti2AlN MAX phase films with a continuous and smooth geometry at a depth of 2 μm. This study gives ideas for the development of multi-coating systems in which patterns of different geometries are included in a single layer. [ABSTRACT FROM AUTHOR]

The addition of Al 2 O 3 inside thermal barrier coatings (TBCs) is highlighted effective on mitigating TBCs degradation induced by CMAS corrosion. In this study, the cost-effective 20 wt.%Al 2 O 3 -7YSZ/7YSZ double ceramic layer (DCL) TBCs were fabricated and their long-term performance resisting CMAS corrosion was investigated. Significant bending and CMAS infiltration occurred readily for the single layer 7YSZ coatings just after 5 h duration. The top sacrificial Al 2 O 3 -7YSZ layer of DCL coatings greatly constrained coating deflection and CMAS infiltration. This is due to the chemical reaction between alumina splats and CMAS, generating interconnected anorthites for effectively blocking CMAS infiltration and improving resistance to CMAS attack. However, it is highlighted that the role of alumina splats on mitigating CMAS degradation was found different between the short-term corrosion and long-term corrosion. In addition, interfacial delamination/cracking was not observed between the top Al 2 O 3 -7YSZ layer and bottom 7YSZ layer after 100 h CMAS corrosion, demonstrating superior interface integrity and durability. [ABSTRACT FROM AUTHOR]

The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation from a thin film to an ensemble of nanoislands upon annealing proceeds in good agreement with the void growth model. With increasing annealing duration, the size and shape uniformity of the nanoislands improves. This improvement speeds up for higher annealing temperature. After an optimum annealing duration, the size uniformity deteriorates due to the coalescence of neighboring islands. By changing the Pt film thickness, the nanoisland diameter and density can be quantitatively controlled in a way predicted by a simple thermodynamic model. We demonstrate the uniformity of the nanoisland ensembles for an area larger than 1 cm2. GaN nanowires are fabricated by a sequence of dry and wet etching steps, and these nanowires inherit the diameters and density of the Pt nanoisland ensemble used as a mask. Our study achieves advancements in size uniformity and range of obtainable diameters compared to previous works. This simple, economical, and scalable approach to the top-down fabrication of nanowires is useful for applications requiring large and uniform nanowire ensembles with controllable dimensions. [ABSTRACT FROM AUTHOR]

Thermal-cyclic atomic layer etching of Co blanket film and a fine pattern by plasma oxidation and organometallization were investigated. To obtain a smoothly etched surface and self-limiting etching, a two-step temperature-etching process was used. Co was first oxidized using O2 plasma at a low temperature of 25 °C. Then, the Co oxide formed in the first step was organometallized with acetylacetone (acacH) and sublimed at a high temperature of 210 °C, which is appropriate for organometallization and sublimation. The etched amount per cycle was 0.6 nm. This value is the same as the saturated oxidation amount. The root-mean-square roughness after 20-cycle etching was 0.53 nm, and an atomically smooth etched surface was obtained. From the x-ray photoelectron spectroscopy (XPS) analysis, the oxidation state of Co oxide with a 530-eV O1s peak was dominant for organometallization with acacH. As the temperature increased, the O1s XPS peak of the Co oxide shifted lower to 529 eV and formed a columnar-shaped oxide. However, with acacH, oxide was organometallized when the O1s peak was at 530 eV. [ABSTRACT FROM AUTHOR]

Among the nondestructive carbon material characterization tools, the prominence of visible Raman spectroscopy has surged remarkably for many years due to its ability to explore a diverse array of carbon bonding configurations. However, to fully unlock the distinctive features concealed within carbon composite materials, additional specimen treatments or precise spectroscope calibrations are necessary. In the same regard, the tiny diamond grain size (5–10 nm) and the pronounced amount of sp2 carbon in the ultrananocrystalline diamond film represent major challenges in visible light excitation. In this work, we employ calibrated oxygen plasma reactive ion etching conditions to manifest the nanodiamond visible Raman signature from ultrananocrystalline diamond/amorphous carbon composite (UNCD/a‐C) films fabricated by coaxial arc plasma deposition. Upon plasma etching, the broad defect band in the visible Raman spectra converged toward the diamond characteristic Raman peak at 1332 cm−1. A detailed explanation of band components of the Raman spectra is extracted through peak fitting procedures. The results of Raman spectroscopy are further correlated with the electrical characteristics of the nitrogen‐doped UNCD/a‐C films due to the optimized oxygen plasma etching processes. [ABSTRACT FROM AUTHOR]

Quantum phase slip (QPS) is an important effect that occurs in one-dimensional (1D) or quasi-1D superconducting (SC) materials. Due to the extremely high requirements on the uniformity and quality of SC nanowires, it is currently very challenging to obtain repeatable and controllable QPS devices. Here, we report a systematic study of the QPS effect in NbN SC nanowires. High-quality NbN nanowires with different widths are fabricated by combining the processes of photo-lithography, electron beam lithography, and inductively coupled plasma etching. It is found that the electrical transport of the nanowires showed a systematic variation with the wire width, and a clear evolution from single to multiple QPS events with the decrease in wire width is uncovered at low temperatures. Based on these experimental results, the phase diagram reflecting the evolution of the physical states of the nanowires with wire width and temperature is obtained. In addition, we observed the features of the critical voltage, which is a characteristic of the occurrence of coherent QPS (cQPS), in samples with a width of 36 nm in the multiple QPS region. It is worth noting that this cQPS behavior was detected in a non-high-impedance environment. [ABSTRACT FROM AUTHOR]

Starch is a crucial part of the human dietary regimen. Still, its restricted water solubility, low viscosity, and weak heat stability are unfavorable physicochemical characteristics that restrict its use in food applications. So, in the 21st century, green and novel technologies such as cold plasma technology (CPT) and plasma‐activated water (PAW) have been employed for starch modification to improve the starch's physicochemical, digestibility, functional, structural, and thermal properties. This article provided an in‐depth evaluation of the use of cold plasma intervention in starch systems. Moreover, starch was modified due to cross‐linking, plasma etching, and depolymerization mechanisms mediated by plasma species. We may conclude that CPT and PAW are substitute methods for changing starch characteristics. [ABSTRACT FROM AUTHOR]

Silk fibroin (SF) is a natural material with polymorphic structures that determine its water solubility and biodegradability, which can be altered by exposing it to heat. Here, a hybrid thermal lithography method combining scalable microscale laser‐based patterning with nanoscale patterning based on thermal scanning probe lithography is developed. The latter enables in addition grayscale patterns to be made. The resolution limit of the writing in silk fibroin is studied by using a nanoscale heat source from a scanned nanoprobe. The heat thereby induces local water solubility change in the film, which can subsequently be developed in deionized water. Nanopatterns and grayscale patterns down to 50 nm lateral resolution are successfully written in the silk fibroin that behaves like a positive tone resist. The resulting patterned silk fibroin is then applied as a mask for dry etching of SiO2 to form a hard mask for further nano‐processing. A very high selectivity of 42:1 between SiO2 and silk fibroin is obtained allowing for high‐aspect ratio structure to be fabricated. The fabricated nanostructures have very low line edge roughness of 5 ± 2 nm. The results demonstrate the potential of silk fibroin as a water‐soluble resist for hybrid thermal lithography and precise micro/nanofabrication. [ABSTRACT FROM AUTHOR]

In the semiconductor manufacturing process, when conducting inductively coupled plasma-reactive ion etching in challenging environments, both wafers and the ceramic components comprising the chamber's interior can be influenced by plasma attack. When ceramic components are exposed to long-term plasma environments, the eroded components must be replaced. Furthermore, non-volatile reactants can form and settle on semiconductor chips, acting as contaminants and reducing semiconductor production yield. Therefore, for semiconductor processing equipment parts to be utilized, it is necessary that they exhibit minimized generation of contaminant particles and not deviate significantly from the composition of conventionally used Al2O3 and Y2O3; part must also last long in various physicochemical etching environment. Herein, we investigate the plasma etching behavior of Y2O3–Y4Al2O9 (YAM) composites with a variety of mixing ratios under different gas fraction conditions. The investigation revealed that the etching rates and changes in surface roughness for these materials were significantly less than those of Y2O3 materials subjected to both chemical and physical etching. Microstructure analysis was conducted to demonstrate the minimization of crater formation. Mechanical properties of the composite were also analyzed. The results show that the composite can be commercialized as next-generation ceramic component in semiconductor processing equipment applications. [ABSTRACT FROM AUTHOR]

This study introduces focused ion beam (FIB) processing for the first time to etch and thin β‐Ga2O3 microflakes, while exploring the effect of their thicknesses on the phototransistor performance. It is found that when the β‐Ga2O3 microflakes reach a certain thickness, the phototransistors switch from the depletion mode to the enhancement mode, exhibiting extremely low dark current without a gate voltage. The enhancement‐mode phototransistor prepared using this method demonstrates a photo‐dark current ratio as high as 2.3 × 105, a responsivity of 6.3 × 104 A W−1, and an external quantum efficiency of 3.1 × 107% when irradiated with incident light at a wavelength of 254 nm and a power density of 8 µW cm−2. Additionally, the device has a rise time of 43 ms and a fall time of 28 ms, respectively. By using FIB processing to etch and thin β‐Ga2O3 microflakes, this study effectively overcomes the poor controllability and low repeatability associated with the traditional mechanical exfoliation method, as well as the residual impurities from the plasma etching method. This opens up a new avenue for fabricating the high‐performance, low‐dimensional phototransistors based on β‐Ga2O3 with high repeatability and controllability. [ABSTRACT FROM AUTHOR]

Motivated by the drawbacks of solution phase processing, an all‐dry resist formation process is presented that utilizes amorphous zinc‐imidazolate (aZnMIm) films deposited by atomic/molecular layer deposition (ALD/MLD), patterned with electron beam lithography (EBL), and developed by novel low temperature (120 °C) gas phase etching using 1,1,1,5,5,5‐hexafluoroacetylacetone (hfacH) to achieve well‐resolved 22 nm lines with a pitch of 30 nm. The effects of electron beam irradiation on the chemical structure and hfacH etch resistance of aZnMIm films are investigated, and it is found that electron irradiation degrades the 2‐methylimidazolate ligands and transforms aZnMIm into a more dense material that is resistant to etching by hfacH and has a C:N:Zn ratio effectively identical to that of unmodified aZnMIm. These findings showcase the potential for aZnMIm films to function in a dry resist technology. Sensitivity, contrast, and critical dimensions of the patterns are determined to be 37 mC cm−2, 0.87, and 29 nm, respectively, for aZnMIm deposited on silicon substrates and patterned at 30 keV. This work introduces a new direction for solvent‐free resist processing, offering the prospect of scalable, high‐resolution patterning techniques for advanced semiconductor fabrication processes. [ABSTRACT FROM AUTHOR]

In recent years, there has been growing demand for processes to form electromagnetic shielding films on the periphery of semiconductor packages, and shielding films are increasingly being formed by sputter deposition methods with stable processes. However, little consideration has been given to the adhesion mechanism between the mold resin and sputtered Cu film formed on the semiconductor devices. In this study, Cu films were sputtered on mold resin with different etching conditions, and X-ray photoelectron spectroscopy was used to analyze the state of the interface, which affects adhesion. The color difference of the mold resin surface under different Ar and N2 etching conditions was also evaluated. Excellent adhesion between the mold resin and sputtered Cu was achieved under a high flow rate for Ar + N2 etching. The amount of Si (SiO2) exposed on the mold resin surface was correlated with the color difference. We proposed a mechanism in which amino groups in particular were formed on the surface of the mold resin, the resin etching rate increased, and the amount of SiO2 exposed increased. Functional groups, especially amino groups, were also formed on the SiO2 surface by N2 plasma. Cuσ+ in the sputtered film and Nσ- formed on the SiO2 surface adhered to each other through polar interactions. [ABSTRACT FROM AUTHOR]

Thin-film lithium niobate on insulator (LNOI) has recently emerged as an exciting platform for nonlinear integrated photonic devices, drawing parallels with the impact of silicon on insulator (SOI) in the electronic device realm. While the influence of interfacial states of SOI on electronic device performance, particularly their contribution to parasitic radio frequency (RF) losses, is well-documented, this aspect remains relatively unexplored in LNOI, despite their shared silicon/oxide interface structure. Here, we investigate the RF loss arising from mobile charges at the silicon/oxide interface of the LNOI platform. We show that this parasitic conduction can be exacerbated, especially during plasma etching, and leads to substantial RF losses. Through strategic incorporation of a trap-rich poly-silicon layer at this interface, we effectively eliminate this parasitic conduction, resulting in the suppression of RF losses. This work establishes crucial guidelines for harnessing LNOI in applications such as high-frequency electro-mechanical devices, high-speed electro-optic modulators, and high-efficiency microwave-to-optics converters. [ABSTRACT FROM AUTHOR]

The use of non-sinusoidal waveforms in low pressure capacitively coupled plasmas intended for microelectronics fabrication has the goal of customizing ion and electron energy and angular distributions to the wafer. One such non-sinusoidal waveform uses the sum of consecutive harmonics of a fundamental sinusoidal frequency, f0, having a variable phase offset between the fundamental and even harmonics. In this paper, we discuss results from a computational investigation of the relation between ion energy and DC self-bias when varying the fundamental frequency f0 for capacitively coupled plasmas sustained in Ar/CF4/O2 and how those trends translate to a high aspect ratio etching of trenches in SiO2. The fundamental frequency, f0, was varied from 1 to 10 MHz and the relative phase from 0° to 180°. Two distinct regimes were identified. Average ion energy onto the wafer is strongly correlated with the DC self-bias at high f0, with there being a maximum at φ = 0° and minimum at φ = 180°. In the low frequency regime, this correlation is weak. Average ion energy onto the wafer is instead dominated by dynamic transients in the applied voltage waveforms, with a maximum at φ = 180° and minimum at φ = 0°. The trends in ion energy translate to etch properties. In both, the high and low frequency regimes, higher ion energies translate to higher etch rates and generally preferable final features, though behaving differently with phase angle. [ABSTRACT FROM AUTHOR]

The calcium fluoride (CaF 2) component has excellent light transmission and a high laser damage threshold in the UV band, and thus is a potentially ideal material for high-power laser facility. However, the low-damage surface is difficult to attain via the existing processing technologies due to its brittleness, especially the dissociation property of the (111) surface. We innovatively propose H 2 O(g) plasma-assisted porous diamond abrasive lapping technology to achieve low-damage and high-precision surface processing of CaF 2 component, which means that the CaF 2 component is modified first and then the softened modified layer is removed by the porous diamond abrasive lapping. The H 2 O(g) plasma modification mechanism was elucidated through a combination of molecular dynamics simulation and experiment and comparison with H 2 O(g) plasma etching. The modification layer including an oxide layer and a phase change layer was produced by adjusting the plasma processing process (power of 25 W and H 2 O(g) content of 10 ml). Then the modified CaF 2 component was lapped by the porous diamond abrasive tool on the ductile domain layer which is more than the modified layer and less than the sum of the modified layer and plastic domain. When the lapping process parameters were 200 rpm platen rotation speed and 20 N lapping pressure, a surface accuracy of 15.34 nm PV, 2.29 nm RMS (φ1 mm) was obtained. This study provides technical support for the low-damage processing of CaF 2 component. [ABSTRACT FROM AUTHOR]

The chemical etching of germanium in Br2 environment at elevated temperatures is described by the Michaelis–Menten equation. The validity limit of Michaelis–Menten kinetics is subjected to the detailed analysis. The steady-state etching rate requires synergy of two different process parameters. High purity gas should be directed to the substrate on which intermediate reaction product does not accumulate. Theoretical calculations indicate that maximum etching rate is maintained when 99.89% of the germanium surface is covered by the reaction product, and 99.9999967% of the incident Br2 molecules are reflected from the substrate surface. Under these conditions, single GeBr2 molecule is formed after 30 million collisions of Br2 molecules with the germanium surface. [ABSTRACT FROM AUTHOR]

The issue of destructive breakdown and high dark current in AlGaN ultraviolet avalanche photodiodes has conventionally been attributed to material defects, yet direct evidence supporting this claim has been absent. Examining damaged devices that experienced destructive breakdown revealed an intriguing finding: post-treatment with a potent alkali resulted in the emergence of corrosion pits on the device's surface. Subsequently, a dry etching process was implemented in the targeted area to eliminate the corrosion pit. Remarkably, the current–voltage measurement subsequent to this treatment showcased a complete restoration of the damaged device's previous performance. This unequivocally indicates that the destructive breakdown was localized, and the point of punch-through could be precisely identified through the corrosion pit. Consequently, it is now firmly believed that material defects constitute the primary cause of destructive breakdown in these instances. [ABSTRACT FROM AUTHOR]

Plasma-surface modification method (PSMM) is an efficient and inexpensive surface processing method for various materials and has generated great interest in the field of biomedical engineering. This paper focuses on the numerous conventional plasma methods and experimental approaches applied to materials research for suitable biomedical applications, including plasma deposition, laser plasma deposition, plasma sputtering and etching, plasma polymerization, plasma spraying, plasma implantation, and so on. The distinctive benefit of plasma modification is its biocompatibility and surface properties can be enhanced on a selective basis while the bulk characteristics of the materials stay unaltered. Existing materials can hence be used and the requirement for new materials may be circumvented thereby reducing the time for the development of novel and efficient biomedical devices. [ABSTRACT FROM AUTHOR]

Nanosphere lithography, a low‐cost fabrication technique, depends on the self‐assembly of nanoscale features to create nanostructures in a hexagonally close‐packed structure. In this article, the fabrication of 3D nanostructures over a large surface‐area with anisotropy along the growth direction through the combination of chemical and physical plasma etching is reported. The anisotropy stems from etching the nanosphere mask and the substrate at different rates. Due to the dynamic masking effect, a systematic variation of etching time gives rise to intriguing nanostructures with sharp edges that have strong potential for plasmonic applications, with the possibility of manipulating electromagnetic radiation. The structures obtained include nanocylinders, truncated hexagon‐based pyramids, circular pads on a conical base, and nanocones from a single‐layer nanosphere mask. Simulations of the fabrication process offer further insight into the understanding of nanostructure formation. A good agreement between predicted results and experiments confirms the potential of our numerical design. In addition, the optical properties of the nanostructures are investigated by UV–vis and the experimental findings are consistent with simulations based on a finite‐difference time‐domain method. The nanostructures described in this study contribute to the emerging 3D plasmonics and 3D magnonics, with strong potential for a significant impact on biosensor applications. [ABSTRACT FROM AUTHOR]

The impact of the post-trench restoration on the electrical characteristics of vertical GaN power devices is systematically investigated in this work. Following the achievement of microtrench-free GaN trench structure with modified dry etching conditions, the post-trench tetramethylammonium hydroxide (TMAH)-based wet etching and UV/Ozone-based oxidation process are employed to further refine the trench profile. It is shown that the c-plane trench bottom is restored to the level of unetched surface, as evidenced by the improved Schottky interface. Additionally, the post-trench treatment exhibits the anisotropic characteristics with the preferred rounded corner profile on m-plane sidewall compared to a-plane sidewall. The simulations and experimental results demonstrate that the trench MOS barrier Schottky (TMBS) rectifier based on m-plane sidewall could suppress the electric field crowding at the trench corner and, hence, reduce the reverse leakage current by 1–2 orders of magnitude. Furthermore, the MOSCAP test structures were fabricated on the trenches. The extracted interface trap density (Dit) confirms the effective restoration of trench bottom. However, the sidewall surface exhibits the relatively large Dit, which emphasizes the necessity of optimizing the sidewall, particularly for devices incorporating sidewall channel. The demonstrated post-trench restoration technique improves the surface quality and trench structure for the significantly enhanced electrical performances, which is essential for the development of vertical GaN power devices. [ABSTRACT FROM AUTHOR]

Three-dimensional (3D) etching of materials by plasmas is an ultimate challenge in microstructuring applications. A method is proposed to reach a controllable 3D structure by using masks in front of the surface in a plasma etch reactor in combination with local magnetic fields to steer the incident ions in the plasma sheath region toward the surface to reach 3D directionality during etching and deposition. This effect has the potential to be controlled by modifying the magnetic field and/or plasma properties to adjust the relationship between sheath thickness and mask feature size. However, because the guiding length scale is the plasma sheath thickness, which for typical plasma densities is at least tens of micrometers or larger, controlled directional etching and deposition target the field of microstructuring, e.g., of solids for sensors, optics, or microfluidics. In this proof-of-concept study, it is shown that E → × B → drifts tailor the local sheath expansion, thereby controlling the plasma density distribution and the transport when the plasma penetrates the mask during an RF cycle. This modified local plasma creates a 3D etch profile. This is shown experimentally as well as using 2d3v particle-in-cell/Monte Carlo collisions simulation. [ABSTRACT FROM AUTHOR]

In the plasma etching technique, effectively suppressing charging effects is crucial for achieving a high-quality transfer of the mask pattern onto the substrate. For instance, mask patterns that combine complex shapes frequently exhibit a noticeable "corner effect," characterized by significant variations in physical quantities at locations where curvature changes rapidly. This study investigates the feasibility of utilizing specialized designs for mask holes with three basic-shaped openings to counteract charging effects. The research focuses on isolated and deformed triangular, square, and hexagonal mask holes as well as two types of mask arrays (quadrangle and hexagonal arrays). A classical particle simulation program was employed to analyze the evolution of electric field (E-field) distribution and simulated opening during etching time. The results indicate that ions preferentially bombard the sides rather than the vertexes, resulting in flattening of deformed sides. As expected, approximately triangular, square, and hexagonal etched openings can be achieved. Unlike an isolated mask hole, the design for a hole in a specific array is constrained by the pattern of the array. Simulated evolutions demonstrate that specialized designs based on specific arrays can assist in obtaining nearly perfect etched openings. Possible underlying mechanisms have been extensively discussed in this study. These findings offer potential insights into specialized designs for basic mask patterns to counteract charging effects, thereby contributing toward maintaining pattern integrity. [ABSTRACT FROM AUTHOR]

The patterning of silicon and silicon oxide nanocones onto the surfaces of devices introduces interesting phenomena such as anti-reflection and super-transmissivity. While silicon nanocone formation is well-documented, current techniques to fabricate silicon oxide nanocones either involve complex fabrication procedures, non-deterministic placement, or poor uniformity. Here, we introduce a single-mask dry etching procedure for the fabrication of sharp silicon oxide nanocones with smooth sidewalls and deterministic distribution using electron beam lithography. Silicon oxide films deposited using plasma-enhanced chemical vapor deposition are etched using a thin alumina hard mask of selectivity > 88, enabling high aspect ratio nanocones with smooth sidewalls and arbitrary distribution across the target substrate. We further introduce a novel multi-step dry etching technique to achieve ultra-sharp amorphous silicon oxide nanocones with tip diameters of ~10 nm. The processes presented in this work may have applications in the fabrication of amorphous nanocone arrays onto arbitrary substrates or as nanoscale probes. [ABSTRACT FROM AUTHOR]

Embedded Mask Patterning (EMP) has been proposed as a cost-effective fabrication method to be capable of patterning sub-5-nm grain sizes for highly ordered L10-FePt media for Heat-Assisted Magnetic Recording (HAMR). Understanding the etching mechanism of FePt is critical to maintaining the highly ordered L10 structure and low damage to magnetic grains. In this research, a reactive Molecular Dynamics (MD) model is developed to study methanol (MeOH) plasma etching on highly ordered continuous L10-FePt media film. The model describes the reactive interaction mechanism between the plasma products CO/H2 molecules and Fe/Pt atoms. It shows the dominant Fe-C interaction upon the dissociation of CO ligands leads to formation of large and volatile Fen-C clusters contributing to high chemical etch yield. [ABSTRACT FROM AUTHOR]

The current densities in nowadays electronic circuitry are close to the electromigration threshold that may result in the fracture of circuits due to electromigration, hampering further miniaturization of integrated chips. Flexible electronic devices, which use a flexible material instead of rigid silicon as a substrate, might be prone to fracture problems also due to obligatory mechanical deformation. However, finding the location of fractured nanogaps and in situ repairing such atomic‐scale fractured circuits are currently unavailable. To this end, a method is developed to in situ heal nanogaps as large as 20 nm between metallic electrodes on the polyimide (PI)‐covered substrate via voltage sweeping, which is typically employed to generate nanogaps rather than heal nanogaps. The reconnection of nanoelectrodes is realized only when the underneath PI is treated with oxygen plasma etching. Assisted by X‐ray photoelectron spectroscopy, it is revealed that inductively coupled O2 plasma etching not only changes the surface topography but also changes the chemical binding structure of PI, which in return can be used to immobilize metal atoms migrating along the PI surface to gradually close the nanogap, providing an in situ self‐healing paradigm for repairing the atomic scale fractured circuits. [ABSTRACT FROM AUTHOR]