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While mutually interacting spin Hall nano-oscillators (SHNOs) hold great promise for wireless communication, neural networks, neuromorphic computing, and Ising machines, the highest number of synchronized SHNOs remains limited to $N$ = 64. Using ultra-narrow 10 and 20-nm nano-constrictions in W-Ta/CoFeB/MgO trilayers, we demonstrate mutually synchronized SHNO networks of up to $N$ = 105,000. The microwave power and quality factor scale as $N$ with new record values of 9 nW and $1.04 \times 10^6$, respectively. An unexpectedly strong array size dependence of the frequency-current tunability is explained by magnon exchange between nano-constrictions and magnon losses at the array edges, further corroborated by micromagnetic simulations and Brillouin light scattering microscopy. Our results represent a significant step towards viable SHNO network applications in wireless communication and unconventional computing., Comment: 15 pages

We present a frequency tunable magneto-acoustic oscillator (MAO) operating in low-phase-noise and complex dynamical regimes based on a single composite YIG-GGG resonator. The magneto-acoustic resonator (MAR) is based on a YIG (yttrium iron garnet) layer epitaxially grown on a GGG (gadolinium gallium garnet) substrate. By optimizing the YIG thickness, we obtain a high magneto-elastic coupling of around 1 MHz between the ferromagnetic resonance (FMR) in YIG and high overtone acoustic resonances (HBARs) in the YIG-GGG structure in the 1-2 GHz frequency range. It allows to eliminate the need for pre-selectors and bulky circulators, thus simplifying the MAO design while maintaining the possibility to lock to HBAR YIG-GGG modes. With an adjustment in the loop over-amplification parameter, the MAO can be locked either only to high-Q magneto-acoustic HBARs or to both types of resonance including HBARs and the FMR mode of the YIG film. In a low-phase-noise regime, MAO generates only at certain values of the applied field and exhibits discrete frequency tunability with a 3.281 MHz step corresponding to the frequency separation between the adjacent HBAR modes in a YIG-GGG structure. In a complex regime where oscillation conditions expand to include both HBAR and FMR modes, MAO demonstrates continuous generation as the function of the applied field with variable phase noise parameters. Moreover, in low-phase-noise regime, MAO phase noise plot improves by 30 dB compared to the operational regime locked to the pure FMR in YIG which is in agreement with the measured FMR and HBAR Q-factors., Comment: Marie Sk{\l}odowska-Curie Actions, H2020-MSCA-ITN-2020; Project acronym SPEAR; Grant Agreement No. 955671

Ultra-fast spectrum analysis concept based on rapidly tuned spintronic nano-oscillators has been under development for the last few years and has already demonstrated promising results. Here, we demonstrate an ultra-fast microwave spectrum analyzer based on a chain of five mutually synchronized nano-constriction spin Hall nano-oscillators (SHNOs). As mutual synchronization affords the chain a much improved signal quality, with linewidths well below 1 MHz at close to a 10 GHz operating frequency, we observe an order of magnitude better frequency resolution bandwidth compared to previously reported spectral analysis based on single magnetic tunnel junction based spin torque nano-oscillators. The high-frequency operation and ability to synchronize long SHNO chains and large arrays make SHNOs ideal candidates for ultra-fast microwave spectral analysis., Comment: 5 Figures

Ising machines (IM) have recently been proposed as unconventional hardware-based computation accelerators for solving NP-hard problems. In this work, we present a model for a time-multiplexed IM based on the nonlinear oscillations in a delay line-based resonator and numerically study the effects that the circuit parameters, specifically the compression gain $\beta_r$ and frequency nonlinearity $\beta_i$, have on the IM solutions. We find that the likelihood of reaching the global minimum -- the global minimum probability (GMP) -- is the highest for a certain range of $\beta_r$ and $\beta_i$ located near the edge of the synchronization region of the oscillators. The optimal range remains unchanged for all tested coupling topologies and network connections. We also observe a sharp transition line in the ($\beta_i, \beta_r$) space above which the GMP falls to zero. In all cases, small variations in the natural frequency of the oscillators do not modify the results, allowing us to extend this model to realistic systems., Comment: 7 pages, 5 figures; supplementary material 2 pages

As nascent nonlinear oscillators, nano-constriction spin Hall nano-oscillators (SHNOs) represent a promising potential for integration into more complicated systems such as neural networks, magnetic field sensors, and radio frequency (RF) signal classification, their tunable high-frequency operating regime, easy synchronization, and CMOS compatibility can streamline the process. To implement SHNOs in any of these networks, the electrical features of a single device are needed before designing the signal detection CMOS circuitry. This study centers on presenting an empirical electrical model of the SHNO based on a comprehensive characterization of the output impedance of a single SHNO, and its available output power in the range of 2-10 GHz at various bias currents., Comment: 6 pages

Antiferromagnets (AFMs) have great benefits for spintronic applications such as high frequencies (up to THz), high speeds (up to tens of km/s) of magnetic excitations, and field-free operation. Advanced devices will require high-speed propagating spin waves (SWs) as signal carriers, i.e., SWs with high k-vectors, the excitation of which remains challenging. We show that a domain wall (DW) in anisotropic AFM driven by the spin current can be a source of such propagating SWs with high frequencies and group velocities. In the proposed generator, the spin current, with polarization directed along the easy anisotropy axis, excites the precession of the N\'eel vector within the DW. The threshold current is defined by the value of the anisotropy in the hard plane, and the frequency of the DW precession is tuneable by the strength of the spin current. We show that the above precession of spins inside the DW leads to robust emission of high-frequency propagating SWs into the AFM strip with very short wavelengths comparable to the exchange length, which is hard to achieve by any other method., Comment: 6 pages, 4 figures; supplementary material 4 pages

The ever increasing demand for computational power combined with the predicted plateau for the miniaturization of existing silicon-based technologies has made the search for low power alternatives an industrial and scientifically engaging problem. In this work, we explore spintronics-based Ising machines as hardware computation accelerators. We start by presenting the physical platforms on which this emerging field is being developed, the different control schemes and the type of algorithms and problems on which these machines outperform conventional computers. We then benchmark these technologies and provide an outlook for future developments and use-cases that can help them get a running start for integration into the next generation of computing devices.

Magnetic droplets are nanoscale, non-topological, dynamical solitons that can be nucleated in different spintronic devices, such as spin torque nano-oscillators (STNOs) and spin Hall nano-oscillators (SHNOs). This chapter first briefly discusses the theory of spin current driven dissipative magnetic droplets in ferromagnetic thin films with uniaxial anisotropy. We then thoroughly review the research literature on magnetic droplets and their salient features, as measured using electrical, microwave, and synchrotron techniques, and as envisaged by micromagnetic simulations. We also touch upon a closely related soliton, the dynamical skyrmion. Finally, we present an outlook of new routes in droplet science., Comment: 38 pages, 14 figures, book chapter

This chapter reviews the state of the art in mutually synchronized spin-torque and spin Hall nano-oscillator (STNO and SHNO) arrays. After briefly introducing the underlying physics, we discuss different nano-oscillator implementations and their functional properties with respect to frequency range, output power, phase noise, and modulation rates. We then introduce the concepts and the theory of mutual synchronization and discuss the possible coupling mechanisms in spintronic nano-oscillators, such as dipolar, electrical, and spin-wave coupling. We review the experimental literature on mutually synchronized STNOs and SHNOs in one- and two-dimensional arrays and discuss ways to increase the number of mutually synchronized nano-oscillators. Finally, the potential for applications ranging from microwave signal sources/detectors and ultrafast spectrum analyzers to neuromorphic computing elements and Ising machines is discussed together with the specific electronic circuitry that has been designed so far to harness this potential., Comment: Chapter 5 of Book Nanomagnets as Dynamical Systems

Spin Hall nano oscillators (SHNOs) are promising candidates for neuromorphic computing due to their miniaturized dimensions, non-linearity, fast dynamics, and ability to synchronize in long chains and arrays. However, tuning the individual SHNOs in large chains/arrays, which is key to implementing synaptic control, has remained a challenge. Here, we demonstrate circular memristive nano-gates, both precisely aligned and shifted with respect to nano-constriction SHNOs of W/CoFeB/HfOx, with increased quality of the device tunability. Gating at the exact center of the nano-constriction region is found to cause irreversible degradation to the oxide layer, resulting in a permanent frequency shift of the auto-oscillating modes. As a remedy, gates shifted outside of the immediate nano-constriction region can tune the frequency dramatically (>200 MHz) without causing any permanent change to the constriction region. Circular memristive nano-gates can, therefore, be used in SHNO chains/arrays to manipulate the synchronization states precisely over large networks of oscillators., Comment: Marie Sklodowska-Curie Actions, H2020-MSCA-ITN-2020; Project Acronym SPEAR; Grant Agreement No. 955671

We demonstrate that a spin current flowing through a nano-contact into a uniaxial antiferromagnet with first- and second-order anisotropy can excite a self-localized dynamic magnetic soliton, known as a spin-wave droplet in ferromagnets. The droplet nucleates at a certain threshold current with the frequency of the N\'eel vector precession laying below the antiferromagnetic resonance. The frequency exhibits nonlinear behavior with the increasing of applied current. At the high value of applied torque, the soliton mode transforms, and the oscillator emits spin waves propagating in the antiferromagnetic layer., Comment: 6 pages, 5 figures

Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like properties. Here, we study 10--30 nm thick epitaxial ferromagnetic Co$_{\rm 2}$MnGa films with high structural order and very high values of the anomalous Hall conductivity, $\sigma_{\rm xy}=1.35\times10^{5}$ $\Omega^{-1} m^{-1}$ and the anomalous Hall angle, $\theta_{\rm H}=15.8\%$, both comparable to bulk values. We observe a dramatic crystalline orientation dependence of the Gilbert damping constant of a factor of two and a giant intrinsic spin Hall conductivity, $\mathit{\sigma_{\rm SHC}}=(6.08\pm 0.02)\times 10^{5}$ ($\hbar/2e$) $\Omega^{-1} m^{-1}$, an order of magnitude higher than literature values of multilayer Co$_{\rm 2}$MnGa stacks [1-3] and single-layer Ni, Co, Fe [4], and Ni$_{\rm 80}$Fe$_{\rm 20}$~[4,5]. As a consequence, spin-orbit-torque driven auto-oscillations of a 30 nm thick magnetic film are observed for the first time, at an ultralow threshold current density of $J_{th}=6.2\times10^{11}$ $Am^{-2}$. Theoretical calculations of the intrinsic spin Hall conductivity, originating from a strong Berry curvature, corroborate the results and yield values comparable to the experiment. Our results open up for the design of spintronic devices based on single layers of magnetic topological quantum materials., Comment: 19 pages

Time-multiplexed Spinwave Ising Machines (SWIMs) have unveiled a route towards miniaturized, low-cost, and low-power solvers of combinatorial optimization problems. While the number of supported spins is limited by the nonlinearity of the spinwave dispersion, other collective excitations, such as surface acoustic waves (SAWs), offer a linear dispersion. Here, we demonstrate an all-to-all, fully FPGA reprogrammable, 50-spin surface acoustic wave-based Ising machine (SAWIM), using a 50-mm-long Lithium Niobate SAW delay line, off-the-shelf microwave components, and a low-cost FPGA. The SAWIM can solve any 50-spin MAX-CUT problem, with arbitrary coupling matrices, in less than 340 $\mu$s consuming only 0.62 mJ, corresponding to close to 3000 solutions per second and a figure of merit of 1610 solutions/W/s. We compare the SAWIM computational results with those of a 100-spin optical Coherent Ising machine and find a higher probability of solution. Moreover, we demonstrate that there is an optimum overall coupling strength between spins at which the probability of the exact solution reaches 100%. The SAWIM illustrates the general merits of solid state wave-based time-multiplexed Ising machines in the microwave domain as versatile platforms for commercially feasible high-performance solvers of combinatorial optimization problems.

Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin polarized current needed for external field free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin-orbit torque materials, such as heavy metals and topological insulators, provide only an in-plane spin polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin polarized current components, which is not suitable for energy-efficient spin-orbit torque (SOT) applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using a topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin-orbit torque ferromagnetic resonance (STFMR) experiments in a TaIrTe4/Ni80Fe20 heterostructure and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be an order of magnitude higher than the reported values in other materials. These findings of high spin Hall conductivity and large out-of-plane SOT efficiency are suitable for the development of energy efficient and external field-free spintronic devices.

A spinwave Ising machine (SWIM) is a newly proposed type of time-multiplexed hardware solver for combinatorial optimization that employs feedback coupling and phase sensitive amplification to map an Ising Hamiltonian into phase-binarized propagating spin-wave RF pulses in an Yttrium-Iron-Garnet (YIG) film. In this work, we increase the mathematical complexity of the SWIM by adding a global Zeeman term to a 4-spin MAX-CUT Hamiltonian using a continuous external electrical signal with the same frequency as the spin pulses and phase locked with with one of the two possible states. We are able to induce ferromagnetic ordering in both directions of the spin states despite antiferromagnetic pairwise coupling. Embedding a planar antiferromagnetic spin system in a magnetic field has been proven to increase the complexity of the graph associated to its Hamiltonian and thus this straightforward implementation helps explore higher degrees of complexity in this evolving solver., Comment: Index Terms: combinatorial optimization problems, Ising machines, spinwaves, unconventional computing, physical computing, spinwaves

Nano-constriction based spin Hall nano-oscillators (SHNOs) are at the forefront of spintronics research for emerging technological applications such as oscillator-based neuromorphic computing and Ising Machines. However, their miniaturization to the sub-50 nm width regime results in poor scaling of the threshold current. Here, we show that current shunting through the Si substrate is the origin of this problem and study how different seed layers can mitigate it. We find that an ultra-thin Al$_{2}$O$_{3}$ seed layer and SiN (200 nm) coated p-Si substrates provide the best improvement, enabling us to scale down the SHNO width to a truly nanoscopic dimension of 10 nm, operating at threshold currents below 30 $\mu$A. In addition, the combination of electrical insulation and high thermal conductivity of the Al$_{2}$O$_{3}$ seed will offer the best conditions for large SHNO arrays, avoiding any significant temperature gradients within the array. Our state-of-the-art ultra-low operational current SHNOs hence pave an energy-efficient route to scale oscillator-based computing to large dynamical neural networks of linear chains or two-dimensional arrays., Comment: 10 pages, 6 figures

Magnetic droplets are nanoscale, non-topological, magnetodynamical solitons that can be nucleated in spin torque nano-oscillators (STNOs) or spin Hall nano-oscillators (SHNOs). All theoretical, numerical, and experimental droplet studies have so far focused on the free layer (FL), and any additional dynamics in the reference layer (RL) have been entirely ignored. Here we show, using all-perpendicular STNOs, that there is not only significant magnetodynamics in the RL, but the reference layer itself can host a droplet coexisting with the FL droplet. Both droplets are observed experimentally as stepwise changes and sharp peaks in the dc and differential resistance, respectively. Whereas the single FL droplet is highly stable, the coexistence state exhibits high-power broadband microwave noise. Micromagnetic simulations corroborate the experimental results and reveal a strong interaction between the droplets. Our demonstration of strongly interacting and closely spaced droplets offers a unique platform for fundamental studies of highly non-linear soliton pair dynamics., Comment: 23 pages, 6 figures

The reduction of phase noise in electronic systems is of utmost importance in modern communication and signal processing applications and requires an understanding of the underlying physical processes. Here, we systematically study the phase noise in mutually synchronized chains of nano-constriction spin Hall nano-oscillators (SHNOs). We find that longer chains have improved phase noise figures at low offset frequencies (1/f noise), where chains of two and ten mutually synchronized SHNOs have 2.8 and 6.2 dB lower phase noise than single SHNOs. This is close to the theoretical values of 3 and 10 dB, and the deviation is ascribed to process variations between nano-constrictions. However, at higher offset frequencies (thermal noise), the phase noise unexpectedly increases with chain length, which we ascribe to process variations, a higher operating temperature in the long chains at the same drive current and phase delays in the coupling between nano-constrictions.

In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing with nanotechnologies to guide future research, and this collection aims to fill that need. The authors provide a comprehensive roadmap for neuromorphic computing using electron spins, memristive devices, two-dimensional nanomaterials, nanomagnets, and various dynamical systems. They also address other paradigms such as Ising machines, Bayesian inference engines, probabilistic computing with p-bits, processing in memory, quantum memories and algorithms, computing with skyrmions and spin waves, and brain-inspired computing for incremental learning and problem-solving in severely resource-constrained environments. These approaches have advantages over traditional Boolean computing based on von Neumann architecture. As the computational requirements for artificial intelligence grow 50 times faster than Moore's Law for electronics, more unconventional approaches to computing and signal processing will appear on the horizon, and this roadmap will help identify future needs and challenges. In a very fertile field, experts in the field aim to present some of the dominant and most promising technologies for unconventional computing that will be around for some time to come. Within a holistic approach, the goal is to provide pathways for solidifying the field and guiding future impactful discoveries., Comment: 80 pages accepted in Nano Futures

Mutual synchronization of N serially connected spintronic nano-oscillators increases their coherence by a factor $N$ and their output power by $N^2$. Increasing the number of mutually synchronized nano-oscillators in chains is hence of great importance for better signal quality and also for emerging applications such as oscillator-based neuromorphic computing and Ising machines where larger N can tackle larger problems. Here we fabricate spin Hall nano-oscillator chains of up to 50 serially connected nano-constrictions in W/NiFe, W/CoFeB/MgO, and NiFe/Pt stacks and demonstrate robust and complete mutual synchronization of up to 21 nano-constrictions, reaching linewidths of below 200 kHz and quality factors beyond 79,000, while operating at 10 GHz. We also find a square increase in the peak power with the increasing number of mutually synchronized oscillators, resulting in a factor of 400 higher peak power in long chains compared to individual nano-constrictions. Although chains longer than 21 nano-constrictions also show complete mutual synchronization, it is not as robust and their signal quality does not improve as much as they prefer to break up into partially synchronized states. The low current and low field operation of these oscillators along with their wide frequency tunability (2-28 GHz) with both current and magnetic fields, make them ideal candidates for on-chip GHz-range applications and neuromorphic computing., Comment: 9 Pages, 7 figures

Using micromagnetic simulations, we study the interplay between strongly voltage-controlled magnetic anisotropy (VCMA), $\Delta K = \pm$200 kJ/m$^3$, and gate width, $w=$ 10--400 nm, in voltage-gated W/CoFeB/MgO based nano-constriction spin Hall nano-oscillators. The VCMA modifies the local magnetic properties such that the magnetodynamics transitions between regimes of \emph{i}) confinement, \emph{ii}) tuning, and \emph{iii}) separation, with qualitatively different behavior. We find that the strongest tuning is achieved for gate widths of the same size as the the constriction width, for which the effective damping can be increased an order of magnitude compared to its intrinsic value. As a consequence, voltage control remains efficient over a very large frequency range, and subsequent manufacturing advances could allow SHNOs to be easily integrated into next-generation electronics for further fundamental studies and industrial applications.

Spin-torque nano-oscillators (STNOs) are a type of nanoscale microwave auto-oscillators utilizing spin-torque to generate magnetodynamics with great promise for applications in microwaves, magnetic memory, and neuromorphic computing. Here, we report the first demonstration of exchange-spring STNOs, with an exchange-spring ([Co/Pd]-Co) reference layer and a perpendicular ([Co/Ni]) free layer. This magnetic configuration results in high-frequency (>10 GHz) microwave emission at a zero magnetic field and exchange-spring dynamics in the reference layer and the observation of magnetic droplet solitons in the free layer at different current polarities. Our demonstration of bipolar and field-free exchange-spring-based STNOs operating over a 20 GHz frequency range greatly extends the design freedom and functionality of the current STNO technology for energy-efficient high-frequency spintronic and neuromorphic applications., Comment: 19 pages, 4 figures

We demonstrate a spin-wave-based time-multiplexed Ising Machine (SWIM), implemented using a 5 $\mu$m thick Yttrium Iron Garnet (YIG) film and off-the-shelf microwave components. The artificial Ising spins consist of 34--68 ns long 3.125 GHz spinwave RF pulses with their phase binarized using a phase-sensitive microwave amplifier. Thanks to the very low spinwave group velocity, the 7 mm long YIG waveguide can host an 8-spin MAX-CUT problem and solve it in less than 4 $\mu$s while consuming only 7 $\mu$J. Using a real-time oscilloscope, we follow the temporal evolution of each spin as the SWIM minimizes its energy and find both uniform and domain-propagation-like switching of the spin state. The SWIM has the potential for substantial further miniaturization, scalability, speed, and reduced power consumption, and may become a versatile platform for commercially feasible optimization problem solvers with high performance.

We investigate the impact of localized laser heating on the auto-oscillation properties of a 170 nm wide nano-constriction spin Hall nano-oscillators (SHNO) fabricated from a NiFe/Pt bilayer on a sapphire substrate. A 532 nm continuous wave laser is focused down to a spot size of about 500 nm at a power ranging from 0 to 12 mW. Through a comparison with resistive heating, we estimate a local temperature rise of about 8 K/mW. We demonstrate reversible laser tuning of the threshold current, the frequency, and the peak power, and find that the SHNO frequency can be tuned by up to 350 MHz, which is over three times more than the current tuning alone. Increasing the temperature also results in increased signal jitter, an increased threshold current, and a reduced maximum current for auto-oscillations. Our results open up for optical control of single SHNOs in larger SHNO networks without the need for additional voltage gates.

We investigate a W-Ta alloying route to reduce the auto-oscillation current densities and the power consumption of nano-constriction based spin Hall nano oscillators. Using spin-torque ferromagnetic resonance (ST-FMR) measurements on microbars of W$_{\text{100-x}}$Ta$_{\text{x}}$(5 nm)/CoFeB(t)/MgO stacks with t = 1.4, 1.8, and 2.0 nm, we measure a substantial improvement in both the spin-orbit torque efficiency and the spin Hall conductivity. We demonstrate a 34\% reduction in threshold auto-oscillation current density, which translates into a 64\% reduction in power consumption as compared to pure W-based SHNOs. Our work demonstrates the promising aspects of W-Ta alloying for the energy-efficient operation of emerging spintronic devices.

We demonstrate an optimized fabrication process for electric field (voltage gate) controlled nano-constriction spin Hall nano-oscillators (SHNOs), achieving feature sizes of <30 nm with easy to handle ma-N 2401 e-beam lithography negative tone resist. For the nanoscopic voltage gates, we utilize a two-step tilted ion beam etching approach and through-hole encapsulation using 30 nm HfOx. The optimized tilted etching process reduces sidewalls by 75% compared to no tilting. Moreover, the HfOx encapsulation avoids any sidewall shunting and improves gate breakdown. Our experimental results on W/CoFeB/MgO/SiO2 SHNOs show significant frequency tunability (6 MHz/V) even for moderate perpendicular magnetic anisotropy. Circular patterns with diameter of 45 nm are achieved with an aspect ratio better than 0.85 for 80% of the population. The optimized fabrication process allows incorporating a large number of individual gates to interface to SHNO arrays for unconventional computing and densely packed spintronic neural networks., Comment: 8 Pages, 5 Figures

We study femtosecond laser comb driven sustained and coherent spin wave (SW) generation in permalloy (Py) films over a thickness range of $d =$ 40--100 nm. A simple rapid demagnetization model describes the dependence of the observed SW intensity on laser power for all film thicknesses. In the thicker films we observe laser comb excited perpendicular standing spin waves up to third order and to 18 multiples of the 1 GHz laser repetition rate. Our results demonstrate the versatility of femtosecond combs as contact-less SW point sources over a wide range of film thickness and type of SW modes.

Element-selective techniques are central for the understanding of ultrafast spin dynamics in multi-element materials like magnetic alloys. Recently, though, it turned out that the commonly used technique of transverse magneto-optical Kerr effect (T-MOKE) in the EUV range may have linearity issues including unwanted cross talk between different elemental signals. This problem can be sizeable, which puts recent observations of ultrafast spin transfer from Fe to Ni sites in FeNi alloys into question. In this study, we investigate the Fe-to-Ni spin transfer in a cross-talk-free time-resolved X-ray magnetic circular dichroism (XMCD) experiment with a reliable time reference. We find a very similar Fe and Ni dynamics with XMCD as with T-MOKE from identical samples. Considering the non-linearities of the T-MOKE response, the agreement with our findings appears fortuitous. We discuss possible reasons why T-MOKE seems to give accurate results in this case. Our data provide the ongoing discussion about ultrafast spin-transfer mechanisms in FeNi systems with a sound experimental basis.

We study the optical-pump induced ultrafast transient change of the X-ray absorption at the $L_3$ absorption resonances of the transition metals Ni and Fe in Fe$_{0.5}$Ni$_{0.5}$ alloy. We find the effect for both elements to occur simultaneously on a femtosecond timescale. This effect may hence be used as a handy cross-correlation scheme providing a time-zero reference for ultrafast optical-pump soft X-ray-probe measurement. The method benefits from a relatively simple experimental setup as the sample itself acts as time-reference tool. In particular, this technique works with low flux ultrafast soft X-ray sources. The measurements are compared to the cross-correlation method introduced in an earlier publication., Comment: 12 pages, 3 figures

Magnetic droplets are non-topological magnetodynamical solitons displaying a wide range of complex dynamic phenomena with potential for microwave signal generation. Bubbles, on the other hand, are internally static cylindrical magnetic domains, stabilized by external fields and magnetostatic interactions. In its original theory, the droplet was described as an imminently collapsing bubble stabilized by spin transfer torque and, in its zero-frequency limit, as equivalent to a bubble. Without nanoscale lateral confinement, pinning, or an external applied field, such a nanobubble is unstable, and should collapse. Here, we show that we can freeze dynamic droplets into static nanobubbles by decreasing the magnetic field. While the bubble has virtually the same resistance as the droplet, all signs of low-frequency microwave noise disappear. The transition is fully reversible and the bubble can be thawed back into a droplet if the magnetic field is increased under current. Whereas the droplet collapses without a sustaining current, the bubble is highly stable and remains intact for days without external drive. Electrical measurements are complemented by direct observation using scanning transmission x-ray microscopy, which corroborates the analysis and confirms that the bubble is stabilized by pinning., Comment: 23 pages, 5 figures

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors., Comment: an invited paper in the "Advances in Magnetics" series

Nano-constriction spin-Hall nano-oscillators (NC-SHNOs) are one of the most promising alternatives among the microwave spintronics devices. They can provide highly coherent and widely tuneable microwave signals and can be fabricated at low temperatures, which makes them compatible with back-end-of-the-line CMOS processing. For its applications, the frequency stability of each device is crucial, in particular for synchronization of oscillator arrays. In this work, we focus on the influence of a realistic grain structure on the SHNO frequency stability using both measurements as well as micromagnetic simulations. Grains in the thin ferromagnetic metal films can influence the output characteristic of the SHNO since the exchange coupling is reduced locally at the grain boundaries. This work provides a novel micromagnetic simulation method, for systematic investigation of frequency instability or variability from device-to-device. Experimentally, a device-to-device frequency variability of ~270 MHz was found and in some extreme cases, a double-mode oscillation was observed in the high current operation range. This oscillation behavior was reproduced in simulations, where the inclusion of grains resulted in a frequency variability of ~100 MHz and double-mode oscillations for some particular configurations. The double modes are consistent with a partial decoupling, or non-coherent operation, of two oscillating regions located at the nano-constriction edges., Comment: 7 pages, 10 figures

Magnetic droplets, a class of highly non-linear magnetodynamical solitons, can be nucleated and stabilized in nanocontact spin-torque nano-oscillators where they greatly increase the microwave output power. Here, we experimentally demonstrate magnetic droplets in magnetic tunnel junctions (MTJs). The droplet nucleation is accompanied by a power increase of over 300 times compared to its ferromagnetic resonance modes. The nucleation and stabilization of droplets are ascribed to the double-CoFeB free layer structure in the all-perpendicular MTJ which provides a low Zhang-Li torque and a high pinning field. Our results enable better electrical sensitivity in the fundamental studies of droplets and show that the droplets can be utilized in MTJ-based applications.

Synchronization of large spin Hall nano-oscillators (SHNO) arrays is an appealing approach toward ultra-fast non-conventional computing based on nanoscale coupled oscillator networks. However, for large arrays, interfacing to the network, tuning its individual oscillators, their coupling, and providing built-in memory units for training purposes, remain substantial challenges. Here, we address all these challenges using memristive gating of W/CoFeB/MgO/AlOx based SHNOs. In its high resistance state (HRS), the memristor modulates the perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface purely by the applied electric field. In its low resistance state (LRS), and depending on the voltage polarity, the memristor adds/subtracts current to/from the SHNO drive. The operation in both the HRS and LRS affects the SHNO auto-oscillation mode and frequency, which can be tuned up to 28 MHz/V. This tuning allows us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate two individually controlled memristors to tailor both the coupling strength and the frequency of the synchronized state. Memristor gating is therefore an efficient approach to input, tune, and store the state of the SHNO array for any non-conventional computing paradigm, all in one platform.

We investigate the origin of the experimentally observed varying current-frequency nonlinearity of the propagating spin wave mode in nano-contact spin torque oscillators. Nominally identical devices with 100 nm diameter are characterized by electrical microwave measurements and show large variation in the generated frequency as a function of drive current. This quantitative and qualitative device-to-device variation is described in terms of continuous and discontinuous nonlinear transitions between linear current intervals. The thin film grain microstructure in our samples is determined using atomic force and scanning electron microscopy to be on the scale of 30 nm. Micromagnetic simulations show that the reflection of spin waves against the grain boundaries results in standing wave resonance configurations. For a simulated device with a single artificial grain, the frequency increases linearly with the drive current until the decreased wavelength eventually forces another spin wave anti-node to be formed. This transition results in a discontinuous step in the frequency versus current relation. Simulations of complete, randomly generated grain microstructures additionally shows continuous nonlinearity and a resulting device-to-device variation in frequency that is similar to the experimental levels. The impact of temperature from 4 K to 300 K on the resonance mode-transition nonlinearity and frequency noise is investigated using simulations and it is found that the peak levels of the spectral linewidth as a function of drive current agrees quantitatively with typical levels found in experiments at room temperature.

Ising Machines (IMs) are physical systems designed to find solutions to combinatorial optimization (CO) problems mapped onto the IM via the coupling strengths of its binary spins. Using the intrinsic dynamics and different annealing schemes, the IM relaxes over time to its lowest energy state, which is the solution to the CO problem. IMs have been implemented in quantum, optical, and electronic hardware. One promising approach uses interacting nonlinear oscillators whose phases have been binarized through injection locking at twice their natural frequency. Here we demonstrate such Oscillator IMs using nano-constriction spin Hall nano-oscillator (SHNO) arrays. We show how the SHNO arrays can be readily phase binarized and how the resulting microwave power corresponds to well-defined global phase states. To distinguish between degenerate states we use phase-resolved Brillouin Light Scattering (BLS) microscopy to directly observe the individual phase of each nano-constriction.

Spin Hall nano-oscillators (SHNOs) are emerging spintronic devices for microwave signal generation and oscillator based neuromorphic computing combining nano-scale footprint, fast and ultra-wide microwave frequency tunability, CMOS compatibility, and strong non-linear properties providing robust large-scale mutual synchronization in chains and two-dimensional arrays. While SHNOs can be tuned via magnetic fields and the drive current, neither approach is conducive for individual SHNO control in large arrays. Here, we demonstrate electrically gated W/CoFeB/MgO nano-constrictions in which the voltage-dependent perpendicular magnetic anisotropy, tunes the frequency and, thanks to nano-constriction geometry, drastically modifies the spin-wave localization in the constriction region resulting in a giant 42 % variation of the effective damping over four volts. As a consequence, the SHNO threshold current can be strongly tuned. Our demonstration adds key functionality to nano-constriction SHNOs and paves the way for energy-efficient control of individual oscillators in SHNO chains and arrays for neuromorphic computing.

We study the current tunable microwave signal properties of nano-constriction based spin Hall nano-oscillators (SHNOs) in oblique magnetic fields as a function of the nano-constriction width, $w=$~50--140 nm. The threshold current is found to scale linearly with $w$, defining a constant threshold current density of $J_{th}=$ 1.7 $\times$ 10$^{8}$ A/cm$^2$. While the current dependence of the microwave frequency shows the same generic non-monotonic behavior for all $w\geqslant$ 80 nm, the quality of the generated microwave signal improves strongly with $w$, showing a linear $w$ dependence for both the total power and the linewidth. As a consequence, the peak power for a 140 nm nano-constriction is about an order of magnitude higher than that of a 80 nm nano-constriction. The smallest nano-constriction, $w=$ 50 nm, exhibits a different behavior with a higher power and a worse linewidth indicating a crossover into a qualitatively different narrow-constriction regime.

Spintronics, the use of spin of an electron instead of its charge, has received huge attention from research communities for different applications including memory, interconnects, logic implementation, neuromorphic computing, and many other applications. Here, in this paper, we review the works within spintronics, more specifically on spin-orbit torque (SOT) within different research groups. We also provide researchers an insight into the future potentials of the SOT-based designs. This comprehensive review paper covers different aspects of SOT-based design from device and circuit to architecture level as well as more ambitious and futuristic applications of such technology., Comment: 17 pages, 13 figures

When magnetic skyrmions move under spin orbit torque in magnetic nanowires, they experience a skyrmion Hall effect, which pushes them towards the nanowire edge where they risk being annihilated; this puts an upper limit on how fast they can be driven. However, the same magnetic multilayer harboring skyrmions can sustain a N\'eel-type strip domain wall along the nanowire length, potentially keeping the skyrmions separated from the edge. Here we study the interplay between current driven skyrmions and domain walls and find that they increase the annihilation current and allow the skyrmions to move faster. Based on the Thiele formalism, we confirm that the emergent longitudinal repulsive force and the modified energy landscape linked to the domain wall are responsible for the enhanced skyrmion motion. Furthermore, we identify that the longitudinal repulsive force emerges because of the broken axisymmetry in the local magnetization in front of the skyrmion. Our study uncovers key aspects in the interplay between two topological magnetic textures from different homotopy groups and may inspire new device concepts., Comment: 39 pages, 6 figures, 5 supplemental figures, and 5 supplemental tables

Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, and beyond-CMOS logic. We discuss state-of-the-art developments in these areas as well as opportunities and challenges that will have to be met, both at the device and system level, in order to integrate novel spintronic functionalities and materials in mainstream microelectronic platforms., Comment: Review written by the SpinFactory European Consortium

A theory of magnetization dynamics in ferrimagnetic materials with antiparallel aligned spin sub-lattices under action of spin-transfer torques (STT) is developed. We consider magnetization dynamics in GdFeCo layers in two cases of magnetic anisotropy: easy plane and easy axis. We demonstrate that, (i) for the easy plane anisotropy the precession of the N\'{e}el vector is conical and the cone angle depends on the STT strength and the value of spin non-compensation, while the frequency of precession can reach sub-THz frequencies; (ii) for the easy axis anisotropy two regimes are possible: deterministic switching of the net magnetization and a conical sub-THz precession depending on the STT strength., Comment: 5 pages, 5 figures

Spin-orbit torque (SOT) can drive sustained spin wave (SW) auto-oscillations in a class of emerging microwave devices known as spin Hall nano-oscillators (SHNOs), which have highly non-linear properties governing robust mutual synchronization at frequencies directly amenable to high-speed neuromorphic computing. However, all demonstrations have relied on localized SW modes interacting through dipolar coupling and/or direct exchange. As nanomagnonics requires propagating SWs for data transfer, and additional computational functionality can be achieved using SW interference, SOT driven propagating SWs would be highly advantageous. Here, we demonstrate how perpendicular magnetic anisotropy can raise the frequency of SOT driven auto-oscillations in magnetic nano-constrictions well above the SW gap, resulting in the efficient generation of field and current tunable propagating SWs. Our demonstration greatly extends the functionality and design freedom of SHNOs enabling long range SOT driven SW propagation for nanomagnonics, SW logic, and neuro-morphic computing, directly compatible with CMOS technology.