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11. Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering

Author

Boulfrad, Yacine, Haarahiltunen, Antti, Savin, Hele, Øvrelid, Eivind J., Arnberg, Lars, Sähkötekniikan korkeakoulu, School of Electrical Engineering, Mikro- ja nanotekniikan laitos, Department of Micro and Nanosciences, Aalto-yliopisto, and Aalto University

Subjects
multicrystalline silicon, iron, Physics, internal gettering, Red Zone
Abstract

The deteriorated area of the multicrystalline silicon (mc-Si) ingots grown by directional solidification, commonly known as the Red Zone, is usually removed before wafering. This area, characterized by poor minority carrier lifetime, is located on the sides, at the top, and the bottom of the mc-Si ingots. In this study, the effect of internal gettering by oxygen precipitates and structural defects has been investigated on the bottom zone of a mc-Si ingot. Nucleation and growth of oxygen precipitates as well as low temperature annealing were studied. Photoluminescence imaging, lifetime mapping, and interstitial iron measurements performed by μ-PCD reveal a considerable reduction of the bottom Red Zone. An improvement of lifetime from below 1 µs to about 20 µs and a reduction of interstitial iron concentration from 1.32 × 1013 at/cm3 to 8.4 × 1010 at/cm3 are demonstrated in this paper.

Published
2013

15. Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering.

Author

Boulfrad, Yacine, Haarahiltunen, Antti, Savin, Hele, Øvrelid, Eivind J., and Arnberg, Lars

Subjects
CRYSTALLINE electric field, SILICON wafers, SOLIDIFICATION, SURFACE defects, PHOTOLUMINESCENCE
Abstract

ABSTRACT The deteriorated area of the multicrystalline silicon (mc-Si) ingots grown by directional solidification, commonly known as the Red Zone, is usually removed before wafering. This area, characterized by poor minority carrier lifetime, is located on the sides, at the top, and the bottom of the mc-Si ingots. In this study, the effect of internal gettering by oxygen precipitates and structural defects has been investigated on the bottom zone of a mc-Si ingot. Nucleation and growth of oxygen precipitates as well as low temperature annealing were studied. Photoluminescence imaging, lifetime mapping, and interstitial iron measurements performed by μ-PCD reveal a considerable reduction of the bottom Red Zone. An improvement of lifetime from below 1 µs to about 20 µs and a reduction of interstitial iron concentration from 1.32 × 1013 at/cm3 to 8.4 × 1010 at/cm3 are demonstrated in this paper. Copyright © 2013 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

Published
2015
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