下記の主題について論議した。微小重力、残留加速度、InGaSb、結晶成長、傾斜溶質濃度法、InGaAs、冷却速度、温度勾配、濃度勾配、成長速度、組成的過冷却、残留重力、g-ジッタ、速度変動、温度変動、濃度変動、分岐図、重力変動、濡れ性、表面張力、坩堝、接触角、表面粗度、一方向凝固、熱力学的推進力、格子モデル、過剰エンタルピー、InAs-GaAs系、微分格子パラメータ法、熱力学方程式、成分プロフィル、核形成、種結晶、多成分域溶融法、成長界面、凸型界面、固液界面、境界適合座標法、および熱伝導方程式。, The following subjects were discussed: microgravity, residual acceleration, InGaSb, crystal growth, graded solute concentration, InGaAs, cooling rate, temperature gradient, concentration gradient, growth rate, constitutional supercooling, residual gravity, g-jitter, velocity fluctuation, temperature fluctuation, concentration fluctuation, bifurcation diagram, gravity fluctuation, wettability, surface tension, crucible, contact angle, roughness, directional solidification, thermodynamic driving force, lattice model, excess enthalpy, InAs-GaAs system, differential lattice parameter, thermodynamic equation, composition profile, nucleation, seed crystal, multi-component zone melting, growth interface, convex interface, solid-liquid interface, boundary fitted coordinate, and thermal conduction equation., 資料番号: AA0002208000, レポート番号: NASDA-TMR-990006E