1. Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC
- Author
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Christian Enz, Claudio Bruschini, Giulio Borghello, Serena Mattiazzo, A. Pezzotta, Federico Faccio, Chun-Min Zhang, Farzan Jazaeri, Andrea Baschirotto, Pezzotta, A, Zhang, C, Jazaeri, F, Bruschini, C, Borghello, G, Faccio, F, Mattiazzo, S, Baschirotto, A, and Enz, C
- Subjects
Semiconductor device modeling ,MOSFET, radiation, total ionizing dose, TID, 28nm bulk CMOS, high-K, HL-LHC ,Short-channel effect ,MOSFET ,radiation ,total ionizing dose ,TID ,28nm bulk CMOS ,high-K ,HL-LHC ,01 natural sciences ,0103 physical sciences ,GigaradMOST ,010302 applied physics ,Physics ,Large Hadron Collider ,010308 nuclear & particles physics ,business.industry ,Settore FIS/01 - Fisica Sperimentale ,Subthreshold slope ,Threshold voltage ,CMOS ,Absorbed dose ,Optoelectronics ,business - Abstract
The Large Hadron Collider (LHC) running at CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of GigaRad Total Ionizing Dose (TID). This paper investigates the impact of such high radiation on transistors fabricated in a commercial 28 nm bulk CMOS process with the perspective of using it for the future silicon-based detectors. The DC electrical behavior of nMOSFETs is studied up to 1 Grad TID. All tested devices demonstrate to withstand that dose without any radiation-hard layout techniques. In spite of that, they experience a significant drain leakage current increase which may affect normal device operation. In addition, a moderate threshold voltage shift and subthreshold slope degradation is observed. These phenomena have been linked to radiation-induced effects like interface and switching oxide traps, together with parasitic side-wall transistors.
- Published
- 2016
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