1. Effect of random vacancies on the electronic properties of graphene and T graphene: a theoretical approach.
- Author
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Sadhukhan, B., Nayak, A., and Mookerjee, A.
- Abstract
In this communication we present together four distinct techniques for the study of electronic structure of solids: the tight-binding linear muffin-tin orbitals, the real space and augmented space recursions and the modified exchange-correlation. Using this we investigate the effect of random vacancies on the electronic properties of the carbon hexagonal allotrope, graphene, and the non-hexagonal allotrope, planar T graphene. We have inserted random vacancies at different concentrations, to simulate disorder in pristine graphene and planar T graphene sheets. The resulting disorder, both on-site (diagonal disorder) as well as in the hopping integrals (off-diagonal disorder), introduces sharp peaks in the vicinity of the Dirac point built up from localized states for both hexagonal and non-hexagonal structures. These peaks become resonances with increasing vacancy concentration. We find that in presence of vacancies, graphene-like linear dispersion appears in planar T graphene and the cross points form a loop in the first Brillouin zone similar to buckled T graphene that originates from $$\pi$$ and $$\pi$$ * bands without regular hexagonal symmetry. We also calculate the single-particle relaxation time, $$\tau (\vec {q})$$ of $$\vec {q}$$ labeled quantum electronic states which originates from scattering due to presence of vacancies, causing quantum level broadening. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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