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Transparent in-line optical power monitoring in Si programmable photonic integrated circuits (PICs) is indispensable for calibrating integrated optical devices such as optical switches and resonators. A Si waveguide (WG) photodetector (PD) based on defect-mediated photodetection is a promising candidate for a transparent in-line optical power monitor owing to its simplicity and ease of integration with a fully complementary metal-oxide-semiconductor (CMOS)-compatible process. Here, we propose a simple optical power monitoring scheme for a 2$\times$2 Mach$\unicode{x2013}$Zehnder interferometer (MZI) optical switch based on InGaAsP/Si hybrid MOS optical phase shifters. In the proposed scheme, a low-doped p-type Si WG PD with a response time of microseconds is utilized as a transparent in-line optical power monitor and the ground terminal of the MOS optical phase shifter is shared with that of the Si WG PD to enable the simple monitoring of the output optical power of the MZI. Based on this scheme, we experimentally demonstrate that the output optical power of a 2$\times$2 MZI can be simply monitored by applying a bias voltage to the Si slabs formed at the output WGs of the MZI without excess optical insertion loss.

The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diverse functionalities are being developed in different single material platforms, it has become crucial to realize hybrid photonic circuits that harness the advantages of multiple materials while mitigating their respective weaknesses, resulting in enhanced capabilities. Here, we demonstrate a hybrid III-V/Silicon quantum photonic device combining the strong second-order nonlinearity and compliance with electrical pumping of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an AlGaAs source and their subsequent routing to a silicon-on-insulator circuitry, within an evanescent coupling scheme managing both polarization states. This enables the on-chip generation of broadband telecom photons by type 0 and type 2 SPDC from the hybrid device, at room temperature and with internal pair generation rates exceeding $10^5$ $s^{-1}$ for both types, while the pump beam is strongly rejected. Two-photon interference with 92% visibility (and up to 99% upon 5 nm spectral filtering) proves the high energy-time entanglement quality characterizing the produced quantum state, thereby enabling a wide range of quantum information applications on-chip, within an hybrid architecture merging the assets of two mature and highly complementary platforms in view of out-of-the-lab deployment of quantum technologies.

The flatness of electro-optic frequency combs (EOFCs) generated in a single silicon ring resonator modulator (RRM) is optimized by employing harmonic superposition of the radio-frequency driving signal. A differential evolution algorithm is employed in conjunction with a simplified model of the RRM for offline optimization of the amplitudes and phases of harmonic driving signals and the operating point of the RRM. The optimized driving signals are then applied to a silicon RRM. EOFCs containing 7 and 9 lines are synthesized with a power imbalance between the lines of 2.9 dB and 5.4 dB, respectively, compared to 9.4 dB for an optimized 5-line comb generated from a single sinusoidal driving signal., Comment: 4 pages, 5 figures, submitted to Optics Letters

Harnessing the frequency dimension in integrated photonics offers key advantages in terms of scalability, noise resilience, parallelization and compatibility with telecom multiplexing techniques. Integrated ring resonators have been used to generate frequency-entangled states through spontaneous four-wave-mixing. However, state-of-the-art integrated resonators are limited by trade-offs in size, number of frequency modes and spectral separation. We have developed silicon ring resonators with a foot-print below 0.05 mm2 providing more than 70 frequency channels separated by 21 GHz. We exploit the narrow frequency separation to parallelize and independently control 34 single qubit-gates with off-the-shelf electro-optic devices. This allows to fully characterize 17 frequency-bin maximally-entangled qubit pairs by performing quantum state tomography. We demonstrate for the first time a fully connected 5-user quantum network in the frequency domain. These results are a step towards a new generation of quantum circuits implemented with scalable silicon photonics technology, for applications in quantum computing and secure communications.

Long wavelength plasma non-uniformities rotating in the azimuthal direction ("rotating spokes") have been observed in a number of experiments on Hall thrusters or magnetron discharges. We use a two-dimensional (2D), axial-azimuthal Particle-In-Cell Monte Carlo Collisions (PIC-MCC) model to study the formation of instabilities in a direct current (dc) magnetron discharge under conditions close to recent experiments. In spite of the simplified 2D geometry of the model, the simulations can reproduce the main features of the experimental results. At a given position above the cathode, corresponding to the spoke location, the simulations show large amplitude oscillations of the plasma density and a very sharp increase of the plasma potential and electron temperature at the leading edge of the spoke, as in time resolved probe measurements. Moreover, the simulations show that the instability evolves in time from a gradient-drift type of instability in the linear phase, to an ionization wave in the non-linear phase, with rotation in the +ExB direction in the first phase and in the -ExB direction in the second phase. The number of spokes is found to increase with pressure, as in experiments. The mechanisms of electron heating and the role of the Bx$\nabla$B drift in electron heating and in the coherence and direction of spoke rotation are discussed.

Azimuthal structures in cylindrical Penning discharge are studied with 2D3V radial-azimuthal PIC/MCC model with the axial magnetic field. The discharge is self-consistently supported by ionization due to the axial injection of electrons. It is shown that the steady-state discharge can be supported in two different regimes with different type of observed azimuthal structures. The transition between the regimes is controlled by the mechanism of the energy input to the discharge. In the first regime (low energy of the injected electrons), with the pronounced $m=1$ spoke activity, the power input is dominated by the energy absorption due to the radial current and self-consistent electric field. In the other regime (higher energy of the injected electrons), with prevalent small scale $m>1$ spiral structures, and the lower values of the anomalous transport, the total energy deposited to the discharge is lower and is mostly due to the direct input of the kinetic energy from the axial electron beam. We show that the large (m=1) spoke and small scale structures occur as a result of Simon-Hoh and lower hybrid instabilities driven by the electric field, density gradient, and collisions. We show that the spoke frequency follows the equilibrium ion rotation frequency.

A one-dimensional Particle-In-Cell Monte Carlo Collisions (PIC-MCC) method has been used to model the development and propagation of ionization waves in neon and argon positive columns. Low current conditions are considered, i.e. conditions where stepwise ionization or Coulomb collisions are negligible (linear ionization rate). This self-consistent model describes the development of self-excited moving striations, reproduces many of the well-known experimental characteristics (wavelength, spatial resonances, potential drop over one striation, electron "bunching" effect) of the ionization waves called p, r and s waves in the literature and sheds light on their physical properties and on the mechanisms responsible for their existence. These are the first fully kinetic self-consistent simulations over a large range of conditions reproducing the development of p, r and s ionization waves. Although the spatial resonances and the detailed properties of the striations in the non-linear regime are of kinetic nature, the conditions of existence of the instability can be obtained and understood from a linear stability analysis of a three-moment set of quasi-neutral fluid equations where the electron transport coefficients are expressed as a function of electron temperature and are obtained from solutions of a 0D Boltzman equation. An essential aspect of the instability leading to the development of these striations is the non-Mawellian nature of the electron energy distribution function in the uniform electric field prior to the instability onset, resulting in an electron diffusion coefficient in space much larger than the energy diffusion coefficient.

Low-frequency axial oscillations (5-50 kHz) stand out as a pervasive feature observed in many types of Hall thrusters. While it is widely recognized that the ionization effects play the central role in this mode, as manifested via the large scale oscillations of neutral and plasma density, the exact mechanism(s) of the instabilities remain unclear. To gain further insights into the physics of the breathing mode and evaluate the role of kinetic effects, a one-dimensional time-dependent full nonlinear low-frequency model describing neutral atoms, ions, and electrons, is developed in full fluid formulation and compared to the hybrid model in which the ions and neutrals are kinetic. Both models are quasineutral and share the same electron fluid equations that include the electron diffusion, mobility across the magnetic field, and the electron energy evolution. The ionization models are also similar in both approaches. The predictions of fluid and hybrid simulations are compared for different test cases. Two main regimes are identified in both models: one with pure low-frequency behaviour and the other one, where the low-frequency oscillations coexist with higher frequency oscillations (with the characteristic time scale of the ion channel flyby time, 100-200 kHz). The other test case demonstrate the effect of a finite temperature of injected atoms which is shown to have a substantial effect on the oscillation amplitude., Comment: 37 pages, 42 figures

A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high sensitivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a responsivity of lower than $10^3$ A/W, which is insufficient for detecting very low power light. Here, we present a waveguide-coupled phototransistor consisting of an InGaAs ultrathin channel on a Si waveguide working as a gate electrode to increase the responsivity. The Si waveguide gate underneath the InGaAs ultrathin channel enables the effective control of transistor current without optical absorption by the gate metal. As a result, our phototransistor achieved the highest responsivity of approximately $10^6$ A/W among the waveguide-coupled phototransistors, allowing us to detect light of 621 fW propagating in the Si waveguide. The high responsivity and the reasonable response time of approximately 100 $\mu$s make our phototransistor promising as an effective optical power monitor in Si photonics circuits.

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources., Comment: 30 pages, 9 figures

This paper provides perspectives on recent progress in the understanding of the physics of devices where the external magnetic field is applied perpendicularly to the discharge current. This configuration generates a strong electric field, which acts to accelerates ions. The many applications of this set up include generation of thrust for spacecraft propulsion and the separation of species in plasma mass separation devices. These ExB plasmas are subject to plasma-wall interaction effects as well as various micro and macro instabilities, and in many devices, we observe the emergence of anomalous transport. This perspective presents the current understanding of the physics of these phenomena, state-of-the-art computational results, identifies critical questions, and suggests directions for future research, Comment: 59 pages, 25 Figures, submitted to Physics of Plasmas

GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconductor. In this approach the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. Continuous wave (cw) as well as pulsed lasing are observed at very low optical pump powers. Lasers with emission wavelength of 2.5 um have thresholds as low as 0.8kWcm^-2 for ns-pulsed excitation, and 1.1kWcm^-2 under cw excitation. These thresholds are more than two orders of magnitude lower than those previously reported for bulk GeSn lasers, approaching these values obtained for III-V lasers on Si. The present results demonstrate the feasabiliy and are the guideline for monolithically integrated Si-based laser sources on Si photonics platform.

Since the signature of the ITER treaty in 2006, a new research programme targeting the emergence of a new generation of Neutral Beam (NB) system for the future fusion reactor (DEMO Tokamak) has been underway between several laboratories in Europe. The specifications required to operate a NB system on DEMO are very demanding: the system has to provide plasma heating, current drive and plasma control at a very high level of power (up to 150 MW) and energy (1 or 2 MeV), including high performances in term of wall-plug efficiency ($\eta$ > 60%), high availability and reliability. To this aim, a novel NB concept based on the photodetachment of the energetic negative ion beam is under study. The keystone of this new concept is the achievement of a photoneutralizer where a high power photon flux (~3 MW) generated within a Fabry Perot cavity will overlap, cross and partially photodetach the intense negative ion beam accelerated at high energy (1 or 2 MeV). The aspect ratio of the beam-line (source, accelerator, etc.) is specifically designed to maximize the overlap of the photon beam with the ion beam. It is shown that such a photoneutralized based NB system would have the capability to provide several tens of MW of D 0 per beam line with a wall-plug efficiency higher than 60%. A feasibility study of the concept has been launched between different laboratories to address the different physics aspects, i.e., negative ion source, plasma modelling, ion accelerator simulation, photoneutralization and high voltage holding under vacuum. The paper describes the present status of the project and the main achievements of the developments in laboratories.