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4. Modelling the DC characteristics of GaAs MESFETs for CAD.

Author

Abuelmaatti, Muhammad Taher

Subjects
*METAL semiconductor field-effect transistors, *DIRECT currents, *GALLIUM arsenide
Abstract

An empirical formula is presented for the current-voltage characteristics of the GaAs MESFET. The three parameters of the formula can be easily obtained from separate regions in the device DC characteristics. By using this formula the implementation of a new GaAs MESFET model into the source code of SPICE is feasible. [ABSTRACT FROM AUTHOR]

Published
1986

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