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Your search keyword '"Aceves-Mijares, M."' showing total 158 results
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158 results on '"Aceves-Mijares, M."'

3. Effect of the Silicon Substrate in the Response of MIS Transistor Sensor for Nano-Watts Light Signal

Author

Hernández-Betanzos, J., Gonzalez-Fernandez, A. A., Pedraza, J., Aceves-Mijares, M., Kacprzyk, Janusz, Series Editor, Pal, Nikhil R., Advisory Editor, Bello Perez, Rafael, Advisory Editor, Corchado, Emilio S., Advisory Editor, Hagras, Hani, Advisory Editor, Kóczy, László T., Advisory Editor, Kreinovich, Vladik, Advisory Editor, Lin, Chin-Teng, Advisory Editor, Lu, Jie, Advisory Editor, Melin, Patricia, Advisory Editor, Nedjah, Nadia, Advisory Editor, Nguyen, Ngoc Thanh, Advisory Editor, Wang, Jun, Advisory Editor, Arai, Kohei, editor, Bhatia, Rahul, editor, and Kapoor, Supriya, editor

Published
2020
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21. Electrical and electroluminescent characterization of nanometric multilayers of SiOX/SiOY obtained by LPCVD including non-normal emission.

Author

Alarcón-Salazar, J., Zaldívar-Huerta, I. E., and Aceves-Mijares, M.

Subjects
ELECTROLUMINESCENCE, CHEMICAL vapor deposition, SILICON oxide, PHOTOLUMINESCENCE, FOURIER transform infrared spectroscopy
Abstract

This work describes the analysis and fabrication by Low Pressure Chemical Vapor Deposition of two light-emitting capacitors (LECs) constituted by nanometric multilayers of silicon-rich oxide. For both structures, seven layers were used: three light emitting layers with 6% silicon excess and four conductive layers with 12% silicon excess for one LEC and the other with 14% silicon excess. Both LECs were annealed at 1100 °C. Both multilayers demonstrate a substantially improved photoluminescent response compared to single emitting layers. A dielectric constant of 4.1 and a trap density of 1016 cm-3 were obtained from capacitance-voltage curves. Analysis of current-voltage and electroluminescence-voltage (EL-V) characteristics indicates that EL initiates under the space-charge-limited current mechanism, and the required voltage to turn on the emission is 38 V which is the trap-free limit voltage. However, EL increases exponentially under the impact ionization and trap-assisted tunneling conduction mechanisms. The electroluminescence spectra for both multilayers show two emission peaks centered in 450 and 700 nm attributed to oxygen defects. Also, the LEC non-normal emission was measured and it behaves like a Lambertian optical source. Both multilayers obtain the values of efficiency in the order of 10-6 which is in good agreement with the values reported in the literature. [ABSTRACT FROM AUTHOR]

Published
2016
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23. Comparison of electrical and electro-optical characteristics of light-emitting capacitors based on silicon-rich Si-oxide fabricated by plasma-enhanced chemical vapor deposition and ion implantation.

Author

González-Fernández, A. A., Juvert, J., Morales-Sánchez, Alfredo, Barreto, Jorge, Aceves-Mijares, M., and Domínguez, C.

Subjects
SILICON oxide, CHEMICAL vapor deposition, ELECTROLUMINESCENCE, ION implantation, PHOTOLUMINESCENCE
Abstract

This work presents electrical and electro-optical studies performed on light-emitting capacitors with silicon-rich silicon oxide fabricated by plasma-enhanced chemical vapor deposition and by the implantation of Si ions in thermally grown SiO2. The influence of the fabrication technique and silicon content on electrical, electro-optical, and emission spectra characteristics has been studied. Results on the electrical behavior show a significant dependence on both the fabrication technique and Si content that translates in variations on electroluminescence with fabrication technique and silicon excess. [ABSTRACT FROM AUTHOR]

Published
2012
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24. Room temperature current oscillations in naturally grown silicon nanocrystallites embedded in oxide films.

Author

Yu, Z., Aceves-Mijares, M., Monfil, K., Kiebach, R., López-Estopier, R., and Carrillo, J.

Subjects
*OSCILLATIONS, *ELECTRIC potential, *TEMPERATURE, *CHEMICAL vapor deposition, *NANOCRYSTALS, *PHYSICS
Abstract

Current oscillations and other abnormalities in the dark current-voltage characteristics of an aluminum/silicon-rich oxide (SRO)/silicon structure were observed at room temperature. The SRO layers in the devices were fabricated by low pressure chemical vapor deposition and postdeposition thermal annealing. The spikelike current oscillations and other abnormalities are interpreted by an alternative switching between the on and off states of the conduction paths through the Si nanocrystallites at proper biases. [ABSTRACT FROM AUTHOR]

Published
2008
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42. Fabrication and characterization of nanometric SiOx/SiOy multilayer structures obtained by LPCVD.

Author

Román-López, S., Aceves-Mijares, M., Carrillo-López, J., and Pedraza-Chávez, J.

Subjects
*MULTILAYERS, *ATOMIC force microscopy, *PHOTOLUMINESCENCE, *FOURIER transform infrared spectroscopy, *SEDIMENTATION & deposition, *ANNEALING of crystals, *DIELECTRICS, *SUPERLATTICES
Abstract

This work presents the fabrication of nanometric multilayer structures and their characterization by Atomic Force Microscopy, Photoluminescence and Fourier Transform Infra Red spectroscopy. The structures were deposited by Low Pressure Chemical Vapor Deposition (LPCVD). Three types of multilayer structure were fabricated. After the deposition some samples were annealed in N2 ambient for three hours. It was found that the structures keep the characteristics of each layer. [ABSTRACT FROM AUTHOR]

Published
2014
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