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To the best of our knowledge. The current work shows that negative capacitance exists at all frequencies, contrary to what is claimed in the literature, which states that negative capacitance only exists at high or low frequencies. In this paper, Au/AlCu/SiO2/p-Si/Al structure was epitaxial grown by the liquid phase epitaxial growth technique. The structural characterization was studied using an X-ray diffraction pattern. The capacitance and conductance behavior was studied using I-V and C-V measurements at various temperatures, voltages, and frequencies. Negative capacitance appears at all frequencies ranging from low to high; moreover, capacitance has both positive and negative values at all frequencies, while the conductance has positive values only in all frequencies. The current-voltage characterization was used to investigation the ideality factor, barrier height, and series resistance. The barrier height and Richard constant were estimated, through investigating the current conduction mechanism of Au/AlCu/SiO2/p-Si/Al.

In this work, we measured the I-V characteristics of silica nanoparticles (SNPs) extracted from the Pleurosira laevis diatom and deposited on top of a p-type Si(111) wafer. The electric response of the SNPs-based diode is found to be more sensitive to thermal and optical power than the fresh frustules-based diode by about 3 and 5 times, respectively. Moreover, the chemically processed SNPs exhibit better diode parameters, i.e. for them the ideality factor is closer to 1, the series resistance is 3 times lower, and the shunt resistance is 4 times higher than those of the fresh frustules silica. It is stimulating to use the extracted SNPs in innovative electronic and optoelectronic applications as an abundant, cheap, and easy-to-process material.

In this work, we measured the I-V characteristics for silica nanoparticles (SNPs) extracted from the Pleurosira laevis diatom and deposited on top of p-type Si(111) wafer. The electric response of SNPs-based photodiode is found to be more sensitive to thermal and optical powers than the fresh frustules-based photodiode by about 3 and 4 times, respectively. Moreover, they exhibit better photodiode parameters, e.g. ideality factor, series resistance, and shunt resistance. This is stimulating to use the extracted SNPs in innovative electronic and optoelectronic applications as an abundant, cheap, and easy-to-process material.

This document offered a novel construction of Au/PPy-MWCNTs/TiO2/Al2O3/p-Si/Al, which did not give in a lecture earlier. We synthesized this construction for request in manufactured electronic devices, sensors, supercapacitors, diodes, and high-energy storage devices. Remarkably tuned the dielectric constant ε′ and dielectric loss tangent tan δ by variable frequency, temperature, and voltage. At high frequency 2 × 107 Hz, the dielectric constant ε′ and dielectric loss tangent tan δ have positive and negative values from (250 to–3500), (−2 to 8). However, at all frequencies (107,106,105) Hz, the ε′ has high positive values (1000,3500,10000), but tan δ has low values (2.6,1.8,4.5). However, at frequencies (103,102) Hz, the ε′ and tanδ have positive and negative values. At a frequency of 10 Hz, the ε′ and tan δ have negative values only. The ε′ with lnf at all voltages and temperatures have negative values at high and low frequencies. In mid frequencies, the ε′ have positive values. Also, the Col-Col diagram and the current conduction mechanism of this construction Au/PPy-MWCNTs/TiO2/Al2O3/p-Si/Al were studied.

A novel structure of Au/PPy-MWCNTs/TiO2/Al2O3/p-Si/Al is presented for application in electronic devices such as diodes, supercapacitors, energy storage devices, and sensors. The negative capacitance (NC) in this structure appeared at a high frequency of 2 × 107 Hz for all voltages and temperatures, with positive and negative values of −8 × 10–9 to 12 × 10–9 Farad, NC disappeared at frequencies 107, 106, 105 and appeared another time at a frequency of 103, 102 and 10 Hz. Their values were positive and negative values, except at 10 Hz, where the capacitance had negative values only. The conductance at all frequencies, voltages, and temperatures had positive values only, with the values increasing with frequencies increased. The capacitance with lnf at all frequencies, temperatures, and voltages has positive and negative values. From 1/C2 –V the electric parameters such as the width of the depletion layer (Wd), the series resistance (Rs), the surface density of states (NSS), the width of the oxide layer dox, the barrier height (ɸb), the Fermi level (Ef), (Vd), and the acceptor carrier concentration (Na), were calculated.

Here, the electrical and dielectric characteristics of Poly(o-toluidine)/SiO2/p-Si metal oxide semiconductor (MOS) device were investigated. The J-V and C–F of the prepared MOS structures were explored in the temperature range of 300–400 K and frequency of 1 KHz-10MHz under dark condition. The charge transport in MOS device was found to obey thermionic emission phenomena and the device exhibited a rectify property. Electrical parameters including, barrier height, states density, ideality factor and series resistance were studied and estimated as a function of temperature. The density of states and the series resistance were decreased with raising temperature which was ascribed to the rearrangement and restructuring of the interfaces. In addition, the dielectric properties of the MOS device were studied. It was found that, the dielectric constant and dielectric loss decreased with raising the frequency. While, the dielectric loss and dielectric loss tangent increased with increasing the temperature. Moreover, the activation energy of the MOS device was calculated as a function of frequency. Both the electrical and dielectric properties of the developed MOS were dependent on temperature and frequency.

The chemical co-polymerization of aniline with o-anthranilic acid (AA) to form copolymer films has been made in aqueous hydrochloric acid medium. Poly vinylcarbazole (PVK) was prepared by free radical mechanism. The copolymer (AA) and polymer (PVK) were reacted with KI respectively, to produce a complex compounds. Also, the complex of copolymer (AA) with NaOEt was prepared. The conductivity, IR spectra and the thermal gravimetric analysis of these polymers and their complexes were measured and discussed. It was found that, the specific electrical conductivity (σ) of the copolymer (AA) in presence of NaOEt increases with increase in temperature, whereas decreases with complex of copolymer (AA) +KI. The electrical properties of the PVK were enhanced upon reacting it with KI.