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PURPOSE Scintillators and photoconductors used in energy integrating detectors (EIDs) have inherent variations in their imaging response to single-detected X-rays due to variations in X-ray energy deposition and secondary quanta generation and transport, which degrades DQE(f). The imaging response of X-ray scintillators to single X-rays may be recorded and studied using single X-ray imaging (SXI) experiments; however, no method currently exists for relating SXI experimental results to EID DQE(f). This work proposes a general analytical framework for computing and analyzing the DQE(f) performance of EIDs from single X-ray image ensembles using a spatial frequency-dependent pulse-height spectrum. METHODS A spatial frequency (f)-dependent gain, g∼(f) , is defined as the Fourier transform of the imaging response of an EID to a single-detected X-ray. A f-dependent pulse-height spectrum, Pr[g∼(f)] , is defined as the 2D probability density function of g∼(f) over the complex plane. Pr[g∼(f)] is used to define a f-dependent Swank factor, AS (f), which fully characterizes the DQE(f) degradation due to single X-ray noise. AS (f) is analyzed in terms of its degradation due to Swank noise, variations in the frequency-dependent attenuation of |g∼(f)| , and noise in argg∼(f) which occurs due to variations in the asymmetry in each single X-ray's imaging response. Three example imaging systems are simulated to demonstrate the impact of depth-dependent variation in g∼(f) , remote energy deposition, and a finite number of secondary quanta, on Pr[g∼(f)] , AS (f), MTF(f), and NPS(f)/NPS(0), which are computed from ensembles of single X-ray images. The same is also demonstrated by simulating a realistic imaging system; that is, a Gd2 O2 S-based EID. Using the latter imaging system, the convergence of AS (f) estimates is investigated as a function of the number of detected X-rays per ensemble. RESULTS Depth-dependent g∼(f) variation resulted in AS (f) degradation exclusively due to depth-dependent optical Swank noise and the Lubberts effect. Conversely, the majority of AS (f) degradation caused by remote energy deposition and finite secondary quanta occurred due to variations in argg∼(f) . When using input X-ray energies below the K-edge of Gd, variations in the frequency-dependent attenuation of |g∼(f)| accounted for the majority of AS (f) degradation in the GOS-based EID, and very little Swank noise and variations in argg∼(f) were observed. Above the K-edge, however, AS (f) degradation due to Swank noise and variations in argg∼(f) greatly increased. The convergence of AS (f) was limited by variation in argg∼(f) ; imaging systems with more variation in argg∼(f) required more detected X-rays per ensemble. CONCLUSIONS An analytical framework is proposed that generalizes the pulse-height spectrum and Swank factor to arbitrary f. The impact of single X-ray noise sources, such as the Lubberts effect, remote energy deposition, and finite secondary quanta on detector performance, may be represented using Pr[g∼(f)] , and quantified using AS (f). The approach may be used to compute MTF(f), NPS(f), and DQE(f) from ensembles of single X-ray images and provides an additional tool to analyze proposed EID designs.

Purpose The detective quantum efficiency (DQE) of indirect flat panel detectors (I-FPDs) is limited at higher x-ray energies (e.g., 100-140 kVp) by low absorption in their scintillating x-ray conversion layer. While increasing the thickness of the scintillator can improve its x-ray absorption efficiency, this approach is potentially limited by reduced spatial resolution and increased noise due to depth dependence in the scintillator's response to x rays. One strategy proposed to mitigate these deleterious effects is to irradiate the scintillator through the pixel sensor in a "back-irradiation" geometry. This work directly evaluates the impact of irradiation geometry on the inherent imaging performance of I-FPDs composed with columnar CsI:Tl and powder Gd2 O2 S:Tb (GOS) scintillators. Methods A "bidirectional" FPD was constructed which allows scintillator samples to be interchangeably coupled with the detector's active matrix to compose an I-FPD. Radio-translucent windows in the detector's housing permit imaging in both "front-irradiation" (FI) and "back-irradiation" (BI) geometries. This test device was used to evaluate the impact of irradiation geometry on the x-ray sensitivity, modulation transfer function (MTF), noise power spectrum (NPS), and DQE of four I-FPDs composed using columnar CsI:Tl scintillators of varying thickness (600-1000 µm) and optical backing, and a Fast Back GOS screen. All experiments used an RQA9 x-ray beam. Results Each I-FPD's x-ray sensitivity, MTF, and DQE was greater or equal in BI geometry than in FI. The I-FPD composed with CsI:Tl (1 mm) and an optically absorptive backing had the largest variation in sensitivity (17%) between FI and BI geometries. The detector composed with GOS had the largest improvement in limiting resolution (31%). Irradiation geometry had little impact on MTF(f) and DQE(f) measurements near zero frequency, however, the difference between FI and BI measurements generally increased with spatial frequency. The CsI:Tl scintillator with optically absorptive backing (1 mm) in BI geometry had the highest spatial resolution and DQE over all frequencies. Conclusions Back irradiation may improve the inherent x-ray imaging performance of I-FPDs composed with CsI:Tl and GOS scintillators. This approach can be leveraged to improve tradeoffs between detector dose efficiency, spatial resolution and noise for higher energy x-ray imaging.

Active matrix flat panel imagers (AMFPIs) with thin film transistor (TFT) arrays are becoming the standard for digital x-ray imaging due to their high image quality and real time readout capabilities. However, in low dose applications their performance is degraded by electronic noise. A promising solution to this limitation is the Scintillator High-Gain Avalanche Rushing Photoconductor AMFPI (SHARP-AMFPI), an indirect detector that utilizes avalanche amorphous selenium (a-Se) to amplify optical signal from the scintillator prior to readout. We previously demonstrated the feasibility of a large area SHARP-AMFPI, however there are several areas of desired improvement. In this work, we present a newly fabricated SHARP-AMFPI prototype detector with the following developments: metal oxide hole blocking layer (HBL) with improved electron transport, transparent bias electrode for increased optical coupling, and detector assembly allowing for a back-irradiation (BI) geometry to improve detective quantum efficiency of scintillators. Our measurements showed that the new prototype has improved temporal performance, with lag and ghosting below 1%. We also show an improvement in optical coupling from 25% to 90% for cesium iodide (CsI) scintillator emissions. The remaining challenge of the SHARP-AMFPI is to reduce the dark current to prevent dielectric breakdown under high bias and further increase optical quantum efficiency (OQE) to CsI scintillators. We are proposing to use a newly developed quantum dot (QD) oxide layer, which shows to reduce the dark current by an order of magnitude, and tellurium doping, which could increase OQE to 85% to CsI at avalanche fields, in future prototype detectors.

Identifying the correct Line-of-Response (LOR) in positron emission tomography (PET) requires accurate localization of the first interaction between incident gamma ray and detector. Improving the accuracy of this localization typically entails offsetting losses in detector efficiency, complexity, or cost. In this paper, we propose a solution that can localize scattered gammas without losses in detector efficiency, utilizing Prism-PET - a single-sided detector module with pixelated light guide. Using Monte Carlo simulations of gamma-detector interactions, we train a Convolutional Neural Network to predict the first interaction position of gammas incident on a detector block.

Direct active matrix flat panel imagers (AMFPIs) using amorphous selenium (a-Se) offer high intrinsic spatial resolution but have limited x-ray quantum efficiency at general radiographic energies due to selenium’s low atomic number. Conversely, indirect AMFPIs using inorganic scintillators typically have superior x-ray quantum efficiency at these energies, but inferior spatial resolution and increased noise due to optical effects in the scintillator. These inherent limitations motivate alternative AMFPI designs to further improve detector xray sensitivity and signal-to-noise performance. Towards this goal, this work constructs and experimentally investigates the x-ray imaging performance of a novel direct-indirect prototype imager referred to as Hybrid AMFPI. The imager comprises a direct conversion a-Se layer that may be coupled to an interchangeable scintillator screen through a transparent blocking layer and bias electrode. In this direct-indirect “hybrid” configuration, a-Se serves as both an x-ray and optical sensor. Readout is performed by a thin-film transistor array with 85 μm pixel pitch. The prototype imager’s x-ray sensitivity, modulation transfer function (MTF), noise power spectrum (NPS) and detective quantum efficiency (DQE) are measured in a direct AMFPI configuration (i.e. a-Se alone) and in a Hybrid configuration under identical x-ray exposure conditions and the results are compared. Contrast-detail and spatial resolution phantoms are also imaged using direct, Hybrid and indirect AMFPI configurations under identical exposure conditions to evaluate differences in their imaging performance.

Recent advances in thin film transistor array technology have enabled the possibility of “back-irradiated” (BI) indirect active-matrix flat-panel imagers (AMFPIs), in which x-rays first expose the scintillator through the optical sensor, and “dual-screen” AMFPIs, in which two scintillating screens are sandwiched around a bidirectional active matrix. We developed a theoretical treatment of such detectors. The theory is used to investigate possible imaging performance improvements over conventional “front-irradiation” (FI) AMFPIs, where the active matrix is opposite the x-ray entrance surface. Simple expressions for the modulation transfer function, normalized noise power spectrum, Swank factor ([Formula: see text]), Lubberts function [Formula: see text] , and spatial frequency-dependent detective quantum efficiency [Formula: see text] are derived and used to compute these quantities for a variety of FI, BI, and dual-screen detector configurations. [Formula: see text] is used as the figure of merit for optimizing and comparing the performance of the various configurations. Large performance improvements over FI single-screen systems are found possible with BI. Further improvements are found possible with dual-screen configurations. The ratio of the thicknesses of the two screens that optimizes DQE is generally asymmetric, with the thinner screen facing the incident flux. The optimum ratio depends on the x-ray attenuation length in the screen.

The x-ray imaging performance of an indirect flat panel detector (I-FPD) is intrinsically limited by its scintillator. Random fluctuations in the conversion gain and spatial blur of scintillators (per detected x-ray) degrade the detective quantum efficiency (DQE) of I-FPDs. These variations are often attributed to depth-dependence in light escape efficiency and spatial spread before detection. Past investigations have used theoretical models to explore how scintillator depth effects degrade DQE(f), however such models have not been validated by direct measurements. Recently, experimental methods have been developed to localize the depth of x-ray interactions in a scintillator, and image the light burst from each interaction using an ultra-high-sensitivity optical camera. This approach, referred to as depth-localized single x-ray imaging (SXI), has enabled direct measurements of both depth-dependent and fixed-depth variations in scintillator gain and spatial resolution. SXI has been used recently to measure depth-dependence in the average gain and modulation transfer function (MTF) of columnar CsI:Tl, which is the scintillator-of-choice for medical I-FPDs. When used in a depth-dependent cascaded linear system model, these SXI measurements accurately predict the presampling MTF(f) of CsI:Tl-based I-FPDs as measured using the slanted-edge method. However, such calculations underestimate the CsI:Tl noise power spectrum (NPS), and thereby overestimate its DQE when compared to conventional measurements. We hypothesize that some of this discrepancy is caused by fixed-depth variations in CsI:Tl spatial resolution, which are not considered in current models. This work characterizes these variations directly using depth-localized SXI and examines their impact on scintillator DQE(f).

PURPOSE: Turbid (powder or columnar-structured) scintillators are widely used in indirect flat panel detectors (I-FPDs) for scientific, industrial and medical radiography. Light diffusion and absorption within these scintillators is expected to cause depth-dependent variations in their x-ray conversion gain and spatial blur. These variations degrade the detective quantum efficiency of I-FPDs at all spatial frequencies. Despite their importance, there are currently no established methods for directly measuring scintillator depth effects. This work develops the instrumentation and methods to achieve this capability. METHODS: An ultra-high-sensitivity camera was assembled for imaging single x-ray interactions in two commercial Gd(2)O(2)S:Tb (GOS) screens (Lanex Regular and Fast Back, Eastman Kodak Company). X-ray interactions were localized to known depths in the screens using a slit beam of parallel synchrotron radiation (32 keV), with beam width (~20 µm) much narrower than the screen thickness. Depth-localized x-ray interaction images were acquired in 30 µm depth-intervals, and analyzed to measure each scintillator’s depth-dependent average gain [Formula: see text] and modulation transfer function MTF(z,f). These measurements were used to calculate each screen’s expected MTF(f) in an energy-integrating detector (e.g. I-FPD). Calculations were compared to presampling MTF measurements made by coupling each screen to a high-resolution CMOS image sensor (48 μm pixel) and using the slanted-edge method. RESULTS: Both [Formula: see text] and MTF(z,f) continuously increased as interactions occurred closer to each screen’s sensor-coupled surface. The Regular yielded 1351 ± 66 and 2117 ± 54 photons per absorbed x-ray (42-66 keV(−1)) in interactions occurring furthest from and nearest to the image sensor, while the Fast Back yielded 833 ± 22 and 1910 ± 39 photons (26-60 keV(−1)). At f = 1 mm(−1), MTF(z,f) varied between 0.63-0.78 in the Regular and 0.30-0.76 in the Fast Back. Calculations of presampling MTF(f) using [Formula: see text] and MTF(z,f) showed excellent agreement with slanted-edge measurements. CONCLUSIONS: The developed instrument and method enable direct measurements of the depth-dependent gain and spatial resolution of turbid scintillators. This knowledge can be used to predict, understand, and potentially improve I-FPD imaging performance.

The x-ray imaging performance of an indirect flat panel detector (I-FPD) is degraded by random variations in its scintillator’s conversion gain. At energies below the K-edge, these variations are caused by depth-dependence in light collection from within the scintillator, and intrinsic fluctuations in the number of optical photons (Nph) emitted per absorbed x-ray. At fixed energy, the former effect can be quantified by the average depth-dependent gain Nph (𝑧). The latter effect can be evaluated using a Fano factor FN, defined as the variance in Nph divided by its mean at fixed interaction depth. Neither phenomenon has been directly measured in non-transparent scintillators used in medical I-FPDs, namely columnar CsI:Tl. This work presents experimental measurements of Nph(𝑧) and FN in a columnar CsI:Tl scintillator with 1000 μm thickness. X-ray interactions were localized to fixed depths (±10 μm, 100 μm intervals) in the scintillator using a microslit beam of parallel synchrotron radiation (32 keV). Light bursts from single interactions at each depth were imaged using an II-EMCCD optical camera, and their magnitude was characterized by 2D summation of their image pixel values. The II-EMCCD camera was calibrated to convert summed pixel values to numbers of optical photons detected per event. The number distributions of photons collected per event were represented in histograms as “depth-localized pulse height spectra” (DLPHS), from which𝑁ph (𝑧) and FN were derived. The II-EMCCD’s noise contribution to these measurements was estimated and removed from FN. Depth-dependent and intrinsic variations in the gain of columnar CsI:Tl are compared.

Motivated by recent advances in TFT array technology for display, this study develops a theoretical treatment of dual granular scintillating screens sandwiched around a light detector and applies this to investigate possible improvements in imaging performance of indirect active-matrix flat-panel imagers (AMFPI’s) for x-ray applications, when dual intensifying screen configurations are used. Theoretical methods, based on previous studies of granular intensifying screens, are developed and applied to calculate modulation transfer function (MTF), normalized noise power spectrum (NNPS), Swank factor (As), Lubberts function L(f), and spatial frequency-dependent detective quantum efficiency (DQE(f)) for a variety of detector configurations in which a pair of screens are sandwiched around a light sensing array. Single-screen front illuminated (FI) and back illuminated (BI) configurations are also included in the analysis. DQE(f) is used as a performance metric to optimize and compare the performance of the various configurations. Large improvements in performance in MTF and DQE(f) are found possible, when the substrate layer between the light sensing array and the intensifying screen is optically thin. The ratio of the thicknesses of the two screens which optimizes DQE performance is generally asymmetric with the thinner screen facing the incident flux, and the ratio depends on the x-ray attenuation length in the phosphor material.

Purpose We present the first prototype Scintillator High-Gain Avalanche Rushing Photoconductor Active Matrix Flat Panel Imager (SHARP-AMFPI). This detector includes a layer of avalanche amorphous Selenium (a-Se) (HARP) as the photoconductor in an indirect detector to amplify the signal and reduce the effects of electronic noise to obtain quantum noise-limited images for low-dose applications. It is the first time avalanche a-Se has been used in a solid-state imaging device and poses as a possible solution to eliminate the effects of electronic noise, which is crucial for low-dose imaging performance of AMFPI. Methods We successfully deposited a solid-state HARP structure onto a 24 × 30 cm2 array of thin-film transistors (TFT array) with a pixel pitch of 85 μm. The HARP layer consists of 16 μm of a-Se with a hole-blocking and electron-blocking layer to prevent charge injection from the high-voltage bias and pixel electrodes, respectively. An electric field (ESe ) up to 105 V μm-1 was applied across the a-Se layer without breakdown. A 150 μm thick-structured CsI:Tl scintillator was used to form SHARP-AMFPI. The x-ray imaging performance is characterized using a 30 kVp Mo/Mo beam. We evaluate the spatial resolution, noise power, and detective quantum efficiency at zero frequency of the system with and without avalanche gain. The results are analyzed using cascaded linear system model (CLSM). Results An avalanche gain of 76 ± 5 was measured at ESe = 105 V μm-1 . We demonstrate that avalanche gain can amplify the signal to overcome electronic noise. As avalanche gain is increased, image quality improves for a constant (0.76 mR) exposure until electronic noise is overcome. Our system is currently limited by poor optical transparency of our high-voltage electrode and long integrating time which results in dark current noise. These two effects cause high-spatial frequency noise to dominate imaging performance. Conclusions We demonstrate the feasibility of a solid-state HARP x-ray imager and have fabricated the largest active area HARP sensor to date. Procedures to reduce secondary quantum and dark noise are outlined. Future work will improve optical coupling and charge transport which will allow for frequency DQE and temporal metrics to be obtained.

The imaging performance of an indirect flat panel detector (I-FPD) is fundamentally limited by that of its scintillator. The scintillator’s modulation transfer function (MTF) varies as a function of the depth of x-ray interaction in the layer, due to differences in the lateral spread of light before detection by the optical sensor. This variation degrades the spatial frequency-dependent detective quantum efficiency (DQE(f)) of I-FPDs, and is quantified by the Lubberts effect. The depth-dependent MTFs of various scintillators used in I-FPDs have been estimated using Monte Carlo simulations, but have never been measured directly. This work presents the first experimental measurements of the depth-dependent MTF of thallium-doped cesium iodide (CsI) and terbium-doped Gd2O2S (GOS) scintillators with thickness ranging from 200 – 1000 μm. Light bursts from individual x-ray interactions occurring at known, fixed depths within a scintillator are imaged using an ultra-high-sensitivity II-EMCCD (image-intensifier, electron multiplying charge coupled device) camera. X-ray interaction depth in the scintillator is localized using a micro-slit beam of parallel synchrotron radiation (32 keV), and varied by translation in 50 ± 1 µm depth intervals. Fourier analysis of the imaged light bursts is used to deduce the MTF versus x-ray interaction depth z. Measurements of MTF(z,f) are used to calculate presampling MTF(f) with RQA-M3, RQA5 and RQA9 beam qualities and compared with conventional slanted edge measurements. Images of the depth-varying light bursts are used to derive each scintillator’s Lubberts function for a 32 keV beam.

Purpose Pulse height spectroscopy has been used by investigators to deduce the imaging properties of scintillators. Pulse height spectra (PHS) are used to compute the Swank factor, which describes the variation in scintillator light output per x-ray interaction. The spread in PHS measured below the K-edge is related to the optical component of the Swank factor, i.e., variations in light escape efficiency from different depths of x-ray interaction in the scintillator, denoted e¯(z). Optimizing scintillators for medical imaging applications requires understanding of these optical properties, as they determine tradeoffs between parameters such as x-ray absorption, light yield, and spatial resolution. This work develops a model for PHS acquisition such that the effect of measurement uncertainty can be removed. This method allows e¯(z) to be quantified on an absolute scale and permits more accurate estimation of the optical Swank factor of scintillators. Methods The pulse height spectroscopy acquisition chain was modeled as a linear system of stochastic gain stages. Analytical expressions were derived for signal and noise propagation through the PHS chain, accounting for deterministic and stochastic aspects of x-ray absorption, scintillation, and light detection with a photomultiplier tube. The derived expressions were used to calculate PHS of thallium-doped cesium iodide (CsI) scintillators using parameters that were measured, calculated, or known from literature. PHS were measured at 25 and 32 keV of CsI samples designed with an optically reflective or absorptive backing, with or without a fiber-optic faceplate (FOP), and with thicknesses ranging from 150–1000 μm. Measured PHS were compared with calculated PHS, then light escape model parameters were varied until measured and modeled results reached agreement. Resulting estimates of e¯(z) were used to calculate each scintillator's optical Swank factor. Results For scintillators of the same optical design, only minor differences in light escape efficiency were observed between samples with different thickness. As thickness increased, escape efficiency decreased by up to 20% for interactions furthest away from light collection. Optical design (i.e., backing and FOP) predominantly affected the magnitude and relative variation in e¯(z). Depending on interaction depth and scintillator thickness, samples with an absorptive backing and FOP were estimated to yield 4.1–13.4 photons/keV. Samples with a reflective backing and FOP yielded 10.4–18.4 keV−1, while those with a reflective backing and no FOP yielded 29.5–52.0 keV−1. Optical Swank factors were approximately 0.9 and near-unity in samples featuring an absorptive or reflective backing, respectively. Conclusions This work uses a modeling approach to remove the noise introduced by the measurement apparatus from measured PHS. This method allows absolute quantification of e¯(z) and more accurate estimation of the optical Swank factor of scintillators. The method was applied to CsI scintillators with different thickness and optical design, and determined that optical design more strongly affects e¯(z) and Swank factor than differences in CsI thickness. Despite large variations in e¯(z) between optical designs, the Swank factor of all evaluated samples is above 0.9. Information provided by this methodology can help validate Monte Carlo simulations of structured CsI and optimize scintillator design for x-ray imaging applications.

Active matrix flat panel imagers (AMFPI) have become the dominant detector technology for digital radiography and fluoroscopy. For low dose imaging, electronic noise from the amorphous silicon thin film transistor (TFT) array degrades imaging performance. We have fabricated the first prototype solid-state AMFPI using a uniform layer of avalanche amorphous selenium (a-Se) photoconductor to amplify the signal to eliminate the effect of electronic noise. We have previously developed a large area solid-state avalanche a-Se sensor structure referred to as High Gain Avalanche Rushing Photoconductor (HARP) capable of achieving gains of 75. In this work we successfully deposited this HARP structure onto a 24 x 30 cm 2 TFT array with a pixel pitch of 85 μm. An electric field ( E Se ) up to 105 Vμm -1 was applied across the a-Se layer without breakdown. Using the HARP layer as a direct detector, an X-ray avalanche gain of 15 ± 3 was achieved at E Se = 105 Vμm -1 . In indirect mode with a 150 μm thick structured CsI scintillator, an optical gain of 76 ± 5 was measured at E Se = 105 Vμm -1 . Image quality at low dose increases with the avalanche gain until the electronic noise is overcome at a constant exposure level of 0.76 mR. We demonstrate the success of a solid-state HARP X-ray imager as well as the largest active area HARP sensor to date.

Flat panel imagers (FPI) are becoming the dominant detector technology for digital x-ray imaging. In indirect FPI, the scintillator that provides the highest image quality is Thallium (Tl) doped Cesium Iodide (CsI) with columnar structure. The maximum CsI thickness used in existing FPI is ~600 microns, due to concerns of loss in spatial resolution and light output with further increase in thickness. The goal of the present work is to investigate the screen-optics for CsI with thicknesses much larger than that used in existing FPI, so that the knowledge can be used to improve imaging performance in dose sensitive and higher energy applications, such as cone-beam CT (CBCT). Columnar CsI(Tl) scintillators up to 1 mm in thickness with different screen-optical design were investigated experimentally. Pulse height spectra (PHS) were measured to determine the Swank factor at x-ray energies between 25 and 75 keV, and to derive depth-dependent light escape efficiency i.e. gain. Detector presampling MTF, NPS and DQE were measured using a high-resolution CMOS optical sensor. Optical Monte Carlo simulation was performed to estimate optical parameters for each screen design and derive depth-dependent gain and MTF, from which overall MTF and DQE were calculated and compared with measured results. The depth-dependent imaging performance parameters were then used in a cascaded linear system model (CLSM) to investigate detector performance under screen- and sensor-side irradiation conditions. The methodology developed for understanding the optics of thick CsI(Tl) will lead to detector optimization in CBCT.

Purpose: We present the first active matrix flat panel imager (AMFPI) capable of producing x-ray quantum noise limited images at low doses by overcoming the electronic noise through signal amplification by photoconductive avalanche gain (gav). The indirect detector fabricated uses an optical sensing layer of amorphous selenium (a-Se) known as High-Gain Avalanche Rushing Photoconductor (HARP). The detector design is called Scintillator HARP (SHARP)-AMFPI. This is the first image sensor to utilize solid-state HARP technology. Methods: The detector's electronic readout is a 24 × 30 cm2 array of thin film transistors (TFT) with a pixel pitch of 85 µm. The HARP structure consists of a 15 µm layer of a-Se isolated from the high voltage (HV) and signal electrode by a 2 µm thick hole blocking layer and electron blocking layer, respectively, to reduce dark current. A 150 µm thick structured CsI scintillator with reflective backing and a fiber optic faceplate (FOP) was coupled to the semi-transparent HV bias electrode of the HARP structure. Images were acquired using a 30 kVp Mo/Mo spectrum typically used in mammography. Results: Optical sensitivity measurements demonstrate that gav = 76 ± 5 can be achieved over the entire active area of the detector. At a constant dose to the detector of 6.67 µGy, image quality increases with gav until the effective electronic noise is negligible. Quantum noise limited images can be obtained with doses as low as 0.18 µGy. Conclusion: We demonstrate the feasibility of utilizing avalanche gain to overcome electronic noise. The indirect detector fabricated is the first solid-state imaging sensor to use HARP, and the largest active area HARP sensor to date. Our future work is to improve charge transport within the HARP structure and utilize a transparent HV electrode.

Purpose: Pulse height spectra (PHS) have been used to determine the Swank factor of a scintillator by measuring fluctuations in its light output per x-ray interaction. The Swank factor and x-ray quantum efficiency of a scintillator define the upper limit to its imaging performance, i.e. DQE(0). The Swank factor below the K-edge is dominated by optical properties, i.e. variations in light escape efficiency from different depths of interaction, denoted e(z). These variations can be optimized to improve tradeoffs in x-ray absorption, light yield, and spatial resolution. This work develops a quantitative model for interpreting measured PHS, and estimating e(z) on an absolute scale. The method is used to investigate segmented ceramic GOS scintillators used in multi-slice CT detectors. Methods: PHS of a ceramic GOS plate (1 mm thickness) and segmented GOS array (1.4 mm thick) were measured at 46 keV. Signal and noise propagation through x-ray conversion gain, light escape, detection by a photomultiplier tube and dynode amplification were modeled using a cascade of stochastic gain stages. PHS were calculated with these expressions and compared to measurements. Light escape parameters were varied until modeled PHS agreed with measurements. The resulting estimates of e(z) were used to calculate PHS without measurement noise to determine the inherent Swank factor. Results: The variation in e(z) was 67.2–89.7% in the plate and 40.2–70.8% in the segmented sample, corresponding to conversion gains of 28.6–38.1 keV−1 and 17.1–30.1 keV−1, respectively. The inherent Swank factors of the plate and segmented sample were 0.99 and 0.95, respectively. Conclusion: The high light escape efficiency in the ceramic GOS samples yields high Swank factors and DQE(0) in CT applications. The PHS model allows the intrinsic optical properties of scintillators to be deduced from PHS measurements, thus it provides new insights for evaluating the imaging performance of segmented ceramic GOS scintillators.