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The negatively charged tin-vacancy center in diamond (SnV$^-$) is an emerging platform for building the next generation of long-distance quantum networks. This is due to the SnV$^-$'s favorable optical and spin properties including bright emission, insensitivity to electronic noise, and long spin coherence times at temperatures above 1 Kelvin. Here, we demonstrate measurement of a single SnV$^-$ electronic spin with a single-shot readout fidelity of $87.4\%$, which can be further improved to $98.5\%$ by conditioning on multiple readouts. We show this performance is compatible with rapid microwave spin control, demonstrating that the trade-off between optical readout and spin control inherent to group-IV centers in diamond can be overcome for the SnV$^-$. Finally, we use weak quantum measurement to study measurement induced dephasing; this illuminates the fundamental interplay between measurement and decoherence in quantum mechanics, and makes use of the qubit's spin coherence as a metrological tool. Taken together, these results overcome an important hurdle in the development of the SnV$^-$ based quantum technologies, and in the process, develop techniques and understanding broadly applicable to the study of solid-state quantum emitters.

Quantum error correction with erasure qubits promises significant advantages over standard error correction due to favorable thresholds for erasure errors. To realize this advantage in practice requires a qubit for which nearly all errors are such erasure errors, and the ability to check for erasure errors without dephasing the qubit. We demonstrate that a "dual-rail qubit" consisting of a pair of resonantly coupled transmons can form a highly coherent erasure qubit, where transmon $T_1$ errors are converted into erasure errors and residual dephasing is strongly suppressed, leading to millisecond-scale coherence within the qubit subspace. We show that single-qubit gates are limited primarily by erasure errors, with erasure probability $p_\text{erasure} = 2.19(2)\times 10^{-3}$ per gate while the residual errors are $\sim 40$ times lower. We further demonstrate mid-circuit detection of erasure errors while introducing $< 0.1\%$ dephasing error per check. Finally, we show that the suppression of transmon noise allows this dual-rail qubit to preserve high coherence over a broad tunable operating range, offering an improved capacity to avoid frequency collisions. This work establishes transmon-based dual-rail qubits as an attractive building block for hardware-efficient quantum error correction., Comment: 9+13 pages, 16 figures

On-chip photonic quantum circuits with integrated quantum memories have the potential to radically progress hardware for quantum information processing. In particular, negatively charged group-IV color centers in diamond are promising candidates for quantum memories, as they combine long storage times with excellent optical emission properties and an optically-addressable spin state. However, as a material, diamond lacks many functionalities needed to realize scalable quantum systems. Thin-film lithium niobate (TFLN), in contrast, offers a number of useful photonic nonlinearities, including the electro-optic effect, piezoelectricity, and capabilities for periodically-poled quasi-phase matching. Here, we present highly efficient heterogeneous integration of diamond nanobeams containing negatively charged silicon-vacancy (SiV) centers with TFLN waveguides. We observe greater than 90\% transmission efficiency between the diamond nanobeam and TFLN waveguide on average across multiple measurements. By comparing saturation signal levels between confocal and integrated collection, we determine a $10$-fold increase in photon counts channeled into TFLN waveguides versus that into out-of-plane collection channels. Our results constitute a key step for creating scalable integrated quantum photonic circuits that leverage the advantages of both diamond and TFLN materials.

The negatively charged tin-vacancy (SnV-) center in diamond is a promising solid-state qubit for applications in quantum networking due to its high quantum efficiency, strong zero phonon emission, and reduced sensitivity to electrical noise. The SnV- has a large spin-orbit coupling, which allows for long spin lifetimes at elevated temperatures, but unfortunately suppresses the magnetic dipole transitions desired for quantum control. Here, by use of a naturally strained center, we overcome this limitation and achieve high-fidelity microwave spin control. We demonstrate a pi-pulse fidelity of up to 99.51+/0.03%$ and a Hahn-echo coherence time of T2echo = 170.0+/-2.8 microseconds, both the highest yet reported for SnV- platform. This performance comes without compromise to optical stability, and is demonstrated at 1.7 Kelvin where ample cooling power is available to mitigate drive induced heating. These results pave the way for SnV- spins to be used as a building block for future quantum technologies., Comment: Final published version

Modern microelectronic processors have migrated towards parallel computing architectures with many-core processors. However, such expansion comes with diminishing returns exacted by the high cost of data movement between individual processors. The use of optical interconnects has burgeoned as a promising technology that can address the limits of this data transfer. While recent pushes to enhance optical communication have focused on developing wavelength-division multiplexing technology, this approach will eventually saturate the usable bandwidth, and new dimensions of data transfer will be paramount to fulfill the ever-growing need for speed. Here we demonstrate an integrated intra- and inter-chip multi-dimensional communication scheme enabled by photonic inverse design. Using inverse-designed mode-division multiplexers, we combine wavelength- and mode- multiplexing and send massively parallel data through nano-photonic waveguides and optical fibres. Crucially, as we take advantage of an orthogonal optical basis, our approach is inherently scalable to a multiplicative enhancement over the current state of the art., Comment: Fig.2-4 present new experimental results -- (i) demonstration of a broadband, low cross-talk multiplexer, (ii) a silicon photonic mode-division multiplexing with a chip-scale soliton microcomb source, and (iii) a chip-to-chip optical interconnect using a multimode-matched fibre and inverse-designed beam couplers

Group-IV color centers in diamond have attracted significant attention as solid-state spin qubits because of their excellent optical and spin properties. Among these color centers, the tin-vacancy (SnV$^{\,\textrm{-}}$) center is of particular interest because its large ground-state splitting enables long spin coherence times at temperatures above 1$\,$K. However, color centers typically suffer from inhomogeneous broadening, which can be exacerbated by nanofabrication-induced strain, hindering the implementation of quantum nodes emitting indistinguishable photons. Although strain and Raman tuning have been investigated as promising techniques to overcome the spectral mismatch between distinct group-IV color centers, other approaches need to be explored to find methods that can offer more localized control without sacrificing emission intensity. Here, we study electrical tuning of SnV$^{\,\textrm{-}}$ centers in diamond via the direct-current Stark effect. We demonstrate a tuning range beyond 1.7$\,$GHz. We observe both quadratic and linear dependence on the applied electric field. We also confirm that the tuning effect we observe is a result of the applied electric field and is distinct from thermal tuning due to Joule heating. Stark tuning is a promising avenue toward overcoming detunings between emitters and enabling the realization of multiple identical quantum nodes.

The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions, long-lived spin ground states, and potential for integration with nanophotonics. Tin-vacancy (SnV$^{\,\textrm{-}}$) centers in diamond are of particular interest because they exhibit narrow-linewidth emission in nanostructures and possess long spin coherence times at temperatures above 1 K. However, a nanophotonic interface for SnV$^{\,\textrm{-}}$ centers has not yet been realized. Here, we report cavity enhancement of the emission of SnV$^{\,\textrm{-}}$ centers in diamond. We integrate SnV$^{\,\textrm{-}}$ centers into one-dimensional photonic crystal resonators and observe a 40-fold increase in emission intensity. The Purcell factor of the coupled system is 25, resulting in channeling of the majority of photons ($90\%$) into the cavity mode. Our results pave the way for the creation of efficient, scalable spin-photon interfaces based on SnV$^{\,\textrm{-}}$ centers in diamond.

Integrating solid-state quantum emitters with photonic circuits is essential for realizing large-scale quantum photonic processors. Negatively charged tin-vacancy (SnV$^-$) centers in diamond have emerged as promising candidates for quantum emitters because of their excellent optical and spin properties including narrow-linewidth emission and long spin coherence times. SnV$^-$ centers need to be incorporated in optical waveguides for efficient on-chip routing of the photons they generate. However, such integration has yet to be realized. In this Letter, we demonstrate the coupling of SnV$^-$ centers to a nanophotonic waveguide. We realize this device by leveraging our recently developed shallow ion implantation and growth method for generation of high-quality SnV$^-$ centers and the advanced quasi-isotropic diamond fabrication technique. We confirm the compatibility and robustness of these techniques through successful coupling of narrow-linewidth SnV$^-$ centers (as narrow as $36\pm2$ MHz) to the diamond waveguide. Furthermore, we investigate the stability of waveguide-coupled SnV$^-$ centers under resonant excitation. Our results are an important step toward SnV$^-$-based on-chip spin-photon interfaces, single-photon nonlinearity, and photon-mediated spin interactions.

The goal of integrated quantum photonics is to combine components for the generation, manipulation, and detection of non-classical light in a phase stable and efficient platform. Solid-state quantum emitters have recently reached outstanding performance as single photon sources. In parallel, photonic integrated circuits have been advanced to the point that thousands of components can be controlled on a chip with high efficiency and phase stability. Consequently, researchers are now beginning to combine these leading quantum emitters and photonic integrated circuit platforms to realize the best properties of each technology. In this article, we review recent advances in integrated quantum photonics based on such hybrid systems. Although hybrid integration solves many limitations of individual platforms, it also introduces new challenges that arise from interfacing different materials. We review various issues in solid-state quantum emitters and photonic integrated circuits, the hybrid integration techniques that bridge these two systems, and methods for chip-based manipulation of photons and emitters. Finally, we discuss the remaining challenges and future prospects of on-chip quantum photonics with integrated quantum emitters., Comment: 17 pages, 9 figures

Chiral light-matter interactions can enable polarization to control the direction of light emission in a photonic device. Most realizations of chiral light-matter interactions require external magnetic fields to break time-reversal symmetry of the emitter. One way to eliminate this requirement is to utilize strong spin-orbit coupling present in transition metal dichalcogenides that exhibit a valley dependent polarized emission. Such interactions were previously reported using plasmonic waveguides, but these structures exhibit short propagation lengths due to loss. Chiral dielectric structures exhibit much lower loss levels and could therefore solve this problem. We demonstrate chiral light-matter interactions using spin-valley states of transition metal dichalcogenide monolayers coupled to a dielectric waveguide. We use a photonic crystal glide plane waveguide that exhibits chiral modes with high field intensity, coupled to monolayer WSe2. We show that the circularly polarized emission of the monolayer preferentially couples to one direction of the waveguide, with a directionality as high as 0.35, limited by the polarization purity of the bare monolayer emission. This system enables on-chip directional control of light and could provide new ways to control spin and valley degrees of freedom in a scalable photonic platform.

Integration of single-photon sources and detectors to silicon-based photonics opens the possibility of complex circuits for quantum information processing. In this work, we demonstrate integration of quantum dots with a silicon photonic add-drop filter for on-chip filtering and routing of telecom single photons. A silicon microdisk resonator acts as a narrow filter that transfers the quantum dot emission and filters the background over a wide wavelength range. Moreover, by tuning the quantum dot emission wavelength over the resonance of the microdisk we can control the transmission of the emitted single photons to the drop and through channels of the add-drop filter. This result is a step toward the on-chip control of single photons using silicon photonics for applications in quantum information processing, such as linear optical quantum computation and boson sampling.

Fiber-coupled single photon sources are essential components of photonics-based quantum information processors. Most fiber-coupled single photon sources require careful alignment between fibers and quantum emitters. In this work, we present an alignment-free fiber-integrated single photon source based on an InAs/InP quantum dot emitting at telecom wavelengths. We designed a nanobeam containing the quantum dots attached to a fiber taper. The adiabatic tapered coupler of the nanobeam enables efficient light coupling to the fiber taper. Using a tungsten probe in a focused ion beam system, we transferred the nanobeam to the fiber taper. The observed fiber-coupled single photon emission occurs with a brightness of 1.5% and purity of 86%. This device provides a building block for fiber-optic quantum circuits that have various applications, such as quantum communication and distributed quantum computing.

InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different emission wavelengths and hinders the possibility of generating multiple identical quantum emitters on the same chip. Stark tuning is an efficient technique to overcome this issue as it can control the emission energy of individual quantum dots through the quantum-confined Stark effect. Realizing this technique in InAs/InP quantum dots has previously been limited to shifts of less than 0.8 meV due to jumps in the emission energy because of additional charges at high electric field intensities. We demonstrate up to 5.1 meV of Stark tuning in the emission wavelength of InAs/InP quantum dots. To eliminate undesirable jumps to charged state, we use a thin oxide insulator to prevent carrier injection from the contacts, thereby significantly improves the tuning range of the Stark effect. Moreover, the single-photon nature and narrow linewidth of the quantum dot emission is preserved under a wide range of applied electric fields. Using photoluminescence intensity measurements and time-resolved lifetime spectroscopy we confirmed that this Stark tuning range is limited by carrier tunneling at high electric fields. This result is an important step toward integrating multiple identical quantum emitters at telecom wavelengths on-a-chip, which is crucial for realizing complex quantum photonic circuits for quantum information processing.

The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulate single photons at low power and high speed. However, lithium niobite lacks efficient single-photon emitters, which are essential for scalable quantum photonic circuits. We demonstrate deterministic coupling of single-photon emitters with a lithium niobate photonic chip. The emitters are composed of InAs quantum dots embedded in an InP nanobeam, which we transfer to a lithium niobate waveguide with nanoscale accuracy using a pick-and place approach. An adiabatic taper transfers single photons emitted into the nanobeam to the lithium niobate waveguide with high efficiency. We verify the single photon nature of the emission using photon correlation measurements performed with an on-chip beamsplitter. Our results demonstrate an important step toward fast, reconfigurable quantum photonic circuits for quantum information processing.

Coupling single photon emitters to surface plasmons provides a versatile ground for on chip quantum photonics. However, achieving good coupling efficiency requires precise alignment of both the position and dipole orientation of the emitter relative to the plasmonic mode. We demonstrate coupling of single emitters in the 2-D semiconductor, WSe2 self-aligned with propagating surface plasmon polaritons in silver-air-silver, metal-insulator-metal waveguides. The waveguide produces strain induced defects in the monolayer which are close to the surface plasmon mode with favorable dipole orientations for optimal coupling. We measure an average enhancement in the rate of spontaneous emission by a factor of 1.89 for coupling the single defects to the plasmonic waveguide. This architecture provides an efficient way of coupling single photon emitters to propagating plasmons which is an important step towards realizing active plasmonic circuits on chip., Comment: 8 pages, 4 figures

Future scalable photonic quantum information processing relies on the ability of integrating multiple interacting quantum emitters into a single chip. Quantum dots provide ideal on-chip quantum light sources. However, achieving quantum interaction between multiple quantum dots on-a-chip is a challenging task due to the randomness in their frequency and position, requiring local tuning technique and long-range quantum interaction. Here, we demonstrate quantum interactions between distant two quantum dots on a nanophotonic waveguide. We achieve a photon-mediated long-range interaction by integrating the quantum dots to the same optical mode of a nanophotonic waveguide and overcome spectral mismatch by incorporating on-chip thermal tuners. We observe their quantum interactions of the form of super-radiant emission, where the two dots collectively emit faster than each dot individually. Creating super-radiant emission from integrated quantum emitters could enable compact chip-integrated photonic structures that exhibit long-range quantum interactions. Therefore, these results represent a major step towards establishing photonic quantum information processors composed of multiple interacting quantum emitters on a semiconductor chip., Comment: 23 pages, 7 figures

Plasmonic nano-structures provides an efficient way to control and enhance the radiative properties of quantum emitters. Coupling these structures to single defects in low-dimensional materials provides a particularly promising material platform to study emitter-plasmon interactions because these emitters are not embedded in a surrounding dielectric. They can therefore approach a near-field plasmonic mode to nanoscale distances, potentially enabling strong light-matter interactions. However, this coupling requires precise alignment of the emitters to the plasmonic mode of the structures, which is particularly difficult to achieve in a site-controlled structure. We present a technique to generate quantum emitters in 2D tungsten diselenide (WSe2) coupled to site-controlled plasmonic nano-pillars. The plasmonic nano-pillars induce strain in the two dimensional material which generates quantum emitters near the high-field region of the plasmonic mode. The electric field of the nano-pillar mode lies close to parallel with the two-dimensional material, and is therefore in the correct orientation to couple to quantum emitters. Interactions between the emitter and plasmonic mode result in an enhanced spontaneous emission and increased brightness. This approach may enable bright site-controlled non-classical light sources for applications in quantum communication and optical quantum computing.

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of pre-characterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons., Comment: 19 Pages in total, including 8 figures

Atomically-thin films of phosphorene (also known as black phosphorus) are a low dimensional optical material with direct exciton emission, whose wavelength is tunable by controlling the number of layers. In addition to this excitonic emission, recent works revealed the existence of emissions from defect states and described new methods to manipulate them. Monolayer phosphorene exhibits emission from localized defect states at wavelengths near 920 nm. Increasing the number of layers should shift the defect emission to longer wavelengths, enabling the material to span a broader spectral range. However, defect emission from few-layer phosphorene has not yet been reported. In this paper, we demonstrate the existence of a new class of near-infrared emission from defect states in few-layer phosphorene. Photoluminescence measurements show a bright emission around 1240 nm with a sublinear growth of emission intensity when the excitation intensity is linearly increased, confirming the defect-based nature of this emission. From time-resolved lifetime measurements we determine an emission lifetime of 1.1 ns, in contrast with the exciton lifetime from phosphorene, which has been previously reported to be in the range of a few hundred picoseconds. This work shows that phosphorene defects can act as a source of infrared light with potential applications in optoelectronics.

Coupling of an atom-like emitter to surface plasmons provides a path toward significant optical nonlinearity, which is essential in quantum information processing and quantum networks. A large coupling strength requires nanometer-scale positioning accuracy of the emitter near the surface of the plasmonic structure, which is challenging. We demonstrate the coupling of single localized defects in a tungsten diselenide (WSe2) monolayer self-aligned to the surface plasmon mode of a silver nanowire. The silver nanowire induces a strain gradient on the monolayer at the overlapping area, leading to the formation of localized defect emission sites that are intrinsically close to the surface plasmon. We measure a coupling efficiency with a lower bound of 39% from the emitter into the plasmonic mode of the silver nanowire. This technique offers a way to achieve efficient coupling between plasmonic structures and localized defects of 2D semiconductors.