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The purpose of this article is to analyse changes in public opinion polls about the participation of the Polish Army in stabilization missions after 1989. The research material consists of two parts. The first includes CBOS surveys from 1994 to 2016 and the second part includes a research project entitled “Political preferences. Attitudes – identifications – behaviour” carried out in 2018. After municipal elections in 2018, respondents answered questions prepared as part of a questionnaire based on a five-point Likert scale. The respondents answered the question: In your opinion, does Poland’s engagement in foreign stabilization missions ensure Poland’s security? and evaluated the statement: I support Polish involvement in foreign stabilization missions. The overview of CBOS surveys and questions within the project shows the analysis of the fluctuation of views on the participation of the Polish Army in the activities abroad. As a result of the research, it can be pointed out that the Polish public opinion undergoes numerous changes under the influence of the dynamics of the international situation, the feeling of threat and destabilization, as well as historical conditions.

VII zmiana polskiego kontyngentu wojskowego w Afganistanie z perspektywy polskich żołnierzy VII zmiana w Afganistanie jest określana jako jedna z najtrudniejszych operacji stabilizacyjnych, przede wszystkim ze względu na zadania jakie były stawiane kontyngentowi (przede wszystkim ze względu na zapewnienie bezpieczeństwa w trakcie wyborów parlamentarnych), oraz warunki polityczno-społeczne w tamtym czasie. Celem niniejszej analizy jest zaprezentowanie VII zmiany w Afganistanie z perspektywy żołnierza. Analiza nie jest w żaden sposób odzwierciedleniem oficjalnych relacji z operacji pokojowej. Pokazuje codzienne obowiązki żołnierza, trud służby za granicą, relacje z Afgańczykami oraz wymagania, z jakimi muszą sobie radzić szeregowi żołnierze. Jest to analiza case study, uzupełniona źródłami o podobnym charakterze.

The pigment melanin, which is believed to play a photoprotective role, was quantified here in human RPE cells from donors of different age. Electron spin resonance (ESR) spectroscopy was shown to provide a quantitative measure of melanin and was used as a non-destructive measure of melanin content. Results indicated an age-related melanin loss in RPE cells, with melanin content diminishing 2.5-fold between the first and the ninth decade of life. To determine whether photo-oxidation may contribute to age-related changes in RPE melanin, RPE in human eyecups, isolated human and bovine RPE cells, purified melanin granules, or synthetic dopa melanin were irradiated with various wavelengths and intensities of visible light. Samples were analysed for changes in melanin content by ESR spectroscopy, and by absorption and emission spectrophotometry. The concentration of hydrogen peroxide was measured in some samples, and some human eyecups were examined by transmission electron microscopy. Irradiation of RPE in eyecups with intense visible light was found to produce a time-dependent photobleaching of melanosomes that was accompanied by the formation of hydrogen peroxide. Photobleaching of isolated RPE melanosomes and synthetic dopa melanin resulted in enhanced melanin fluorescence, as previously shown for melanin from aged donors by others, and significantly reduced ESR signal intensity, resembling the changes in melanin with aging observed here. We conclude that the content of melanin in RPE cells undergoes an age-related change to which photo-oxidation may contribute. This observation raises the question of whether age-related changes in melanin reduce the photoprotective role of the pigment in aging RPE cells.

Subthreshold range is critical for proper operation of analog SOI ICs in harsh environment. Partially depleted (PD) SOI MOSFETs are particularly sensitive to these conditions, because of the parasitic phenomena like kink-effect. This regards to operation in steady-state .and small-signal excitations conditions. Since integrated circuits based on PD SOI MOSFETs are widely fabricated the problem of reliable small-signal modelling is relevant.