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152 results on '"Agnus, G."'

2. Measurement of magnetization using domain compressibility in CoFeB films with perpendicular anisotropy

Author

Vernier, N., Adam, J. P., Eimer, S., Agnus, G., Devolder, T., Hauet, T., Ockert, B., and Ravelosona, D.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

We present a method to map the saturation magnetization of soft ultrathin films with perpendicular anisotropy, and we illustrate it to assess the compositional dependence of the magnetization of CoFeB(1 nm)/MgO films. The method relies on the measurement of the dipolar repulsion of parallel domain walls that define a linear domain. The film magnetization is linked to the field compressibility of the domain. The method also yields the minimal distance between two walls before their merging, which sets a practical limit to the storage density in spintronic devices using domain walls as storage entities.

Published
2013
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3. Time-resolved PhotoEmission Spectroscopy on a Metal/Ferroelectric Heterostructure

Author

Rault, J. E., Agnus, G., Maroutian, T., Pillard, V., Lecoeur, Ph., Niu, G., Vilquin, B., Bendounan, A., Silly, M. G., Sirotti, F., and Barrett, N.

Subjects
Condensed Matter - Materials Science
Abstract

In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a Pt/BaTiO3/SrTiO3:Nb capacitor using time-resolved photoemission spectroscopy. The chemical, electronic and depth sensitivity of core level photoemission is used to probe the transient response of different parts of the upper electrode/ferroelectric interface to voltage pulse induced polarization reversal. The linear response of the electronic structure agrees quantitatively with a simple RC circuit model. The non-linear response due to the polarization switch is demonstrated by the time-resolved response of the characteristic core levels of the electrode and the ferroelectric. Adjustment of the RC circuit model allows a first estimation of the Pt/BTO interface capacitance. The experiment shows the interface capacitance is at least 100 times higher than the bulk capacitance of the BTO film, in qualitative agreement with theoretical predictions from the literature., Comment: 7 pages, 10 figures. Submitted to Phys. Rev. B

Published
2013
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4. Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias

Author

Rault, J. E., Agnus, G., Maroutian, T., Pillard, V., Lecoeur, Ph., Niu, G., Vilquin, B., Silly, M. G., Bendounan, A., Sirotti, F., and Barrett, N.

Subjects
Condensed Matter - Materials Science
Abstract

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface., Comment: 9 pages, 8 figures. Submitted to Phys. Rev. B

Published
2013
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14. List of contributors

Author

Adam, J.P., primary, Agnus, G., additional, Anagnostopoulou, E., additional, Andreas, C., additional, Araújo, J.P., additional, Badini-Confalonieri, G., additional, Baldi, L., additional, Barisik, I., additional, Barnaś, J., additional, Bran, C., additional, Burrowes, C., additional, Chappert, C., additional, Chiriac, H., additional, Chizhik, A., additional, Chubykalo-Fesenko, O., additional, Cowburn, R., additional, Córdoba, R., additional, de Oliveira, L.A.S., additional, De Teresa, J.M., additional, Devolder, T., additional, Digiacomo, A., additional, Dugaev, V.K., additional, DyrdaƗ, A., additional, Eimer, S., additional, El Hadri, M., additional, Fanciulli, M., additional, Fernández-Pacheco, A., additional, Fruchart, O., additional, García, J., additional, Garcia, K., additional, Garcia Sanchez, F., additional, Hayashi, M., additional, Hernando, B., additional, Herrera Diez, L., additional, Hertel, R., additional, Hingant, T., additional, Hyun, J.K., additional, Ibarra, M.R., additional, Iglesias, L., additional, Inglot, M., additional, Ipatov, M., additional, Ivanov, Y.P., additional, Jacques, V., additional, Jamet, S., additional, Jiménez, A., additional, Kim, B., additional, Kim, J.-V., additional, Kim, S., additional, Klaui, M., additional, Kraus, L., additional, Lacroix, L.-M., additional, Lamperti, A., additional, Lazzarini, L., additional, Lee, H., additional, Lin, W., additional, López-Ruiz, R., additional, Lupu, N., additional, Makhnovskiy, D.P., additional, Mantovan, R., additional, Marianni, M., additional, Michalik, S., additional, Minguez-Bacho, I., additional, Nagashima, K., additional, Nasi, L., additional, Navas, D., additional, Ockert, B., additional, Ott, F., additional, Óvári, T.-A., additional, Panagiotopoulos, I., additional, Panina, L.V., additional, Pardavi-Horvath, M., additional, Piquemal, J.-Y., additional, Pirota, K.R., additional, Pousthomis, M., additional, Pérez del Real, R., additional, Prida, V.M., additional, Proenca, M.P., additional, Quintana-Nedelcos, A., additional, Ravelosona, D., additional, Rougemaille, N., additional, Ryba, T., additional, Sanchez Llamazares, J.L., additional, Serrano-Ramón, L.E., additional, Sousa, C.T., additional, Tallarida, G., additional, Tartakovskaya, E.V., additional, Tetienne, J.-P., additional, Torrejon, J., additional, Toussaint, J.C., additional, Varga, R., additional, Vargova, Z., additional, Vega, V., additional, Ventura, J., additional, Vernier, N., additional, Viau, G., additional, Vila, L., additional, Vivas, L.G., additional, Vázquez, M., additional, Yanagida, T., additional, Zhang, S., additional, Zhang, Y., additional, Zhao, W., additional, Zhukov, A., additional, Zhukova, V., additional, and Žužek Rožman, K., additional

Published
2015
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16. High piezoelectricity in epitaxial BiFeO3 microcantilevers.

Author

Matzen, S., Gable, S., Lequet, N., Yousfi, S., Rani, K., Maroutian, T., Agnus, G., Bouyanfif, H., and Lecoeur, P.

Subjects
MICROCANTILEVERS, PIEZOELECTRICITY, MICROELECTROMECHANICAL systems, THIN films, ELECTROMECHANICAL devices, LEAD titanate, ELECTROMECHANICAL effects, COPLANAR waveguides
Abstract

The large switchable ferroelectric polarization and lead-free composition of BiFeO3 make it a promising candidate as an active material in numerous applications, in particular, in micro-electro-mechanical systems (MEMS) when BiFeO3 is integrated in a thin film form on a silicon substrate. Here, 200-nm-thick Mn-doped BiFeO3 thin films have been epitaxially grown on a SrRuO3/SrTiO3/Si substrate and patterned into microcantilevers as prototype device structures for piezoelectric actuation. The devices demonstrate excellent ferroelectric response with a remanent polarization of 55 μC/cm2. The epitaxial BiFeO3 MEMS exhibit very high piezoelectric response with transverse piezoelectric coefficient d31 reaching 83 pm/V. The BiFeO3 cantilevers show larger electromechanical performance (the ratio of curvature/electric field) than that of state-of-art piezoelectric cantilevers, including well-known PZT (Pb(Zr,Ti)O3) and the hyper-active PMN–PT (Pb(Mg1/3Nb2/3)O3-PbTiO3). In addition, the piezoelectricity in BiFeO3 MEMS is found to depend on the ferroelectric polarization direction, which could originate from the flexoelectric effect and be exploited to further enhance the electromechanical performance of the devices. These results could potentially lead to a replacement of lead-based piezoelectrics by BiFeO3 in many microdevices. [ABSTRACT FROM AUTHOR]

Published
2022
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18. Electric field controlled domain wall dynamics and magnetic easy axis switching in liquid gated CoFeB/MgO films.

Author

Liu, Y. T., Ono, S., Agnus, G., Adam, J.-P., Jaiswal, S., Langer, J., Ocker, B., Ravelosona, D., and Diez, L. Herrera

Subjects
THIN films, MAGNESIUM oxide, IONIC liquids, MAGNETIC anisotropy, MAGNETIC properties
Abstract

We present reversible electric (E) field driven switching of the magnetic easy axis in CoFeB/MgO/ HfO2 heterostructures from perpendicular to in-plane using an ionic liquid gate. The modification of magnetic anisotropy reaches 0.108 mJ/m2 in a gate voltage range between —3V and 3.5V with an efficiency of 82 fJ (V m)–1. The influence of the E-field induced anisotropy changes on domain nucleation and propagation of magnetic domain walls has also been studied in the perpendicular anisotropy state. A significant modulation of the domain wall velocity is observed in both the creep and depinning regimes of domain wall motion consistent with the E-field induced anisotropy variation. In addition, we demonstrate voltage controlled magnetization switching under a constant magnetic field and voltage control of domain wall pinning. [ABSTRACT FROM AUTHOR]

Published
2017
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21. Magnetic domain wall curvature induced by wire edge pinning

Author

Herrera Diez, L., primary, Ummelen, F., additional, Jeudy, V., additional, Durin, G., additional, Lopez-Diaz, L., additional, Diaz-Pardo, R., additional, Casiraghi, A., additional, Agnus, G., additional, Bouville, D., additional, Langer, J., additional, Ocker, B., additional, Lavrijsen, R., additional, Swagten, H. J. M., additional, and Ravelosona, D., additional

Published
2020
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22. Engineering erbium-doped oxide thin layers for integrated photonics

Author

Ruiz-Caridad, Alicia, Marcaud, G, Ramirez, J, Largeau, L, Maroutian, T, Matzen, S, Collin, S, Agnus, G, Cassan, E, Marris-Morini, D, Lecoeur, P, Vivien.., L., Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and Ruiz-Caridad, Alicia

Subjects
[SDV] Life Sciences [q-bio], [PHYS]Physics [physics], [SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], [SDV]Life Sciences [q-bio], ComputingMilieux_MISCELLANEOUS, [PHYS] Physics [physics]
Abstract

International audience

Published
2019

23. Ionic-liquid gating of perpendicularly magnetised CoFeB/MgO thin films.

Author

Liu, Y. T., Agnus, G., Ono, S., Ranno, L., Bernand-Mantel, A., Soucaille, R., Adam, J.-P., Langer, J., Ocker, B., Ravelosona, D., and Herrera Diez, L.

Subjects
*IONIC liquids, *THIN films, *CONDENSED matter physics, *SOLID state electronics, *SURFACE coatings
Abstract

We present the modulation of anisotropy field, coercivity, and domain wall (DW) velocity in CoFeB/MgO thin films with perpendicular anisotropy by applying voltages across an ionic liquid gate. Domain wall velocities in the creep regime can be modulated by a factor of 4.2, and the anisotropy field of the device can be modulated by 40 mT when going from +0.8V to -0.8V. The applied E-fields are seen to significantly influence DWs' pinning, depinning, and nucleation processes. In addition, we report on the evolution of the magnetic properties of the liquid/solid device as a function of time going from the pristine CoFeB/MgO film through device fabrication and operation up to one month. These results show that the solid/liquid device structure based on CoFeB/MgO thin films can be an efficient way to control magnetic properties with voltages below 1V. [ABSTRACT FROM AUTHOR]

Published
2016
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24. Epitaxial manganite freestanding bridges for low power pressure sensors.

Author

Le Bourdais, D., Agnus, G., Maroutian, T., Pillard, V., Aubert, P., Bachelet, R., Saint-Girons, G., Vilquin, B., Lefeuvre, E., and Lecoeur, P.

Subjects
*MANGANITE, *PRESSURE sensors, *STRONTIUM titanate, *HEAT transfer, *ENERGY consumption, *FERROELECTRICITY, *FERROMAGNETISM
Abstract

The highly temperature-dependent resistivity of the La2/3Sr1/3MnO3 (LSMO) manganite is taken as an advantage in a pressure sensor design based on the Pirani effect. Thin epitaxial films are grown on silicon substrate thanks to a SrTiO3 buffer layer that allows the fabrication of freestanding bridges by means of clean-room processes. The devices are then heated by Joule effect and their temperature modulated by heat transfer through the surrounding gas. The higher the current flowing in the bridge, the larger the resistance variation with pressure is, due to the Pirani effect. The heating current and device geometry are tuned in order to stay in a monotonous regime, avoiding the change of sign of the LSMO temperature coefficient. A sensitivity increased by a factor of 3 and a power consumption reduced by 5 orders of magnitude are measured by comparing oxide devices with conventional metallic ones of same geometry. [ABSTRACT FROM AUTHOR]

Published
2015
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25. Exploring nonlinear optics effects on rare-earth doped yttria-stabilized zirconia on silicon nitride photonic platform

Author

Ruiz-Caridad, Alicia, Lafforgue, C., Marcaud, G., Ramirez, J. M., Largeau, L., Maroutian, T., Matzen, S., Alonso-Ramos, C., Agnus, G., Guerber, S., BAUDOT, C., Boeuf, F., Cassan, E., Marris-Morini, D., Lecoeur, P., Vivien, L., Ruiz-Caridad, Alicia, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS, [PHYS] Physics [physics]
Abstract

International audience

Published
2019

26. Development of a microwave capacitive method for the spectroscopy of the complex permittivity.

Author

Jégou, C., Agnus, G., Maroutian, T., Pillard, V., Devolder, T., Crozat, P., Lecoeur, P., and Aubert, P.

Subjects
*SPECTROMETRY, *ELECTRIC displacement, *ELECTRIC resistance, *HYSTERESIS, *COPLANAR waveguides
Abstract

We describe a vector network analyzer-based method to study the electromagnetic properties of nanoscale dielectrics at microwave frequencies (1 MHz-40 GHz). The complex permittivity spectrum of a given dielectric can be determined by placing it in a capacitor accessed on its both electrodes by coplanar waveguides. However, inherent propagation delays along the signal paths together with frequency-dependent effective surface of the capacitor at microwave frequencies can lead to significant distortion in the measured permittivity, which in turn can give rise to artificial frequency variations of the complex permittivity. We detail a fully analytical rigorous correction sequence with neither recourse to extrinsic loss mechanisms nor to arbitrary parasitic signal paths. We illustrate our method on 3 emblematic dielectrics: ferroelectric morphotropic lead zirconate titanate, its paraelectric pyrochlore counterpart, and strontium titanate. Permittivity spectra taken at various points along the hysteresis loop help shedding light onto the nature of the different dielectric energy loss mechanisms. Thanks to the analytical character of our method, we can discuss routes to extend it to higher frequencies and we can identify unambiguously the sources of potential artifacts. [ABSTRACT FROM AUTHOR]

Published
2014
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27. Wire edge dependent magnetic domain wall creep

Author

Herrera Diez, L., primary, Jeudy, V., additional, Durin, G., additional, Casiraghi, A., additional, Liu, Y. T., additional, Voto, M., additional, Agnus, G., additional, Bouville, D., additional, Vila, L., additional, Langer, J., additional, Ocker, B., additional, Lopez-Diaz, L., additional, and Ravelosona, D., additional

Published
2018
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28. Interface reactivity and epitaxial growth of SrTiO3 and other functional oxides on Si and GaAs

Author

Benjamin Meunier, Rahma Moalla, Adrien Carretero-Genevrier, Largeau, L., Gazquez, J., Philippe Regreny, Claude Botella, Jose Penuelas, Bertrand Vilquin, Baba Wague, Geneviève Grenet, Agnus, G., Lecoeur, P., Silly, M., Sirotti, F., Romain Bachelet, Guillaume Saint-Girons, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Inl, Laboratoire INL UMR5270, Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

4-9 sept 2016; International audience; no abstract

Published
2016

30. Epitaxial growth of ferroelectric Pb(Zr,Ti)O3 thin layers on SrTiO3-templated GaAs/InGaAs quantum well structure for opto-mechanical application

Author

Benjamin Meunier, Romain Bachelet, Bertrand Vilquin, Pedro Rojo-Romeo, Geneviève Grenet, Claude Botella, Philippe Regreny, Jose Penuelas, Agnus, G., Lecoeur, P., Pillard, V., Nicolas Chauvin, Largeau, L., Guillaume Saint-Girons, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), Laboratoire de photonique et de nanostructures (LPN), and Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

15-18 mars, 2015; International audience; no abstract

Published
2015

31. Epitaxial growth of SrTiO3 on GaAs : Towards opto-mechanical applications

Author

Benjamin Meunier, Geneviève Grenet, Claude Botella, Philippe Regreny, Romain Bachelet, Nicolas Chauvin, Largeau, L., Jose Penuelas, Agnus, G., Lecoeur, P., Bertrand Vilquin, Pedro Rojo-Romeo, Guillaume Saint-Girons, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and INL - Nanophotonique (INL - Photonique)

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

11-15 mai 2015; International audience; no abstract

Published
2015

32. Perovskite Oxide MEMS: Strain Control and Sensor Applications

Author

Lecoeur, P., Le Bourdais, D., Agnus, G., Maroutian, T., Matzen, M., Largeau, L., Guillaume Saint-Girons, Bertrand Vilquin, Lefeuvre, E., Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), and École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

29 novembre – 4 décembre 2015; International audience; no abstract

Published
2015

33. Memristive and neuromorphic behaviour in a LixCoO2 nanobattery

Author

Mai, V. H., Moradpour, A., Senzier, P. A., Pasquier, C., Wang, K., Rozenberg, M. J., Giapintzakis, John, Mihailescu, C. N., Orfanidou, C. M., Svoukis, E., Breza, A., Lioutas, C. B., Franger, S., Revcolevschi, A., Maroutian, T., Lecoeur, P., Aubert, P., Agnus, G., Salot, R., Albouy, P. A., Weil, R., Alamarguy, D., March, K., Jomard, F., Chrétien, P., Schneegans, O., Laboratoire Génie électrique et électronique de Paris (GeePs), Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris-Sud - Paris 11 (UP11), Laboratoire de Physique des Solides (LPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia], Aristotle University of Thessaloniki, Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Institut d'électronique fondamentale (IEF), CEA/LITEN/DTNM/LT, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Universidad de Buenos Aires [Buenos Aires] (UBA), Laboratoire de Physico-Chimie de l'Etat Solide (CHIMSOL), ARC-Nucleart CEA Grenoble (NUCLEART), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Giapintzakis, John [0000-0002-7277-2662], and University of Cyprus [Nicosia] (UCY)

Subjects
[PHYS]Physics [physics], Multidisciplinary, Computer science, business.industry, Memristor, Article, law.invention, Resistive random-access memory, [SPI.MAT]Engineering Sciences [physics]/Materials, Synapse, Neuromorphic engineering, Nanoelectronics, law, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Artificial intelligence, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of Li(x)CoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.

Published
2015
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34. Ferroelectric Pb(Zr, Ti)O3 thin layers on SrTiO3/GaAs

Author

Meunier, B., Louahadj, L., LE BOURDAIS, D., Largeau, L., Agnus, G., Mazet, L., Bachelet, R., Regreny, P., Albertini, D., Pillard, V., Dubourdieu, C., Gautier, B., Lecoeur, P., Saint-Girons, G., Service de Chirurgie Hépatobiliaire et Digestive [Rennes] = Hepatobiliary and Digestive Surgery [Rennes], CHU Pontchaillou [Rennes], INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), INL - Plateforme Technologique Nanolyon (INL - Nanolyon), Service de Chirurgie Hépatobiliaire et Digestive, Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Hôpital Pontchaillou-CHU Pontchaillou [Rennes], École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon, Laboratoire d'Analyse et de Mathématiques Appliquées (LAMA), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Fédération de Recherche Bézout-Université Paris-Est Marne-la-Vallée (UPEM), Service de Chirurgie Hépatobiliaire et Digestive [Rennes], Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Université Paris-Est Marne-la-Vallée (UPEM)-Fédération de Recherche Bézout-Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014
Full Text
View/download PDF

35. Function Learning with Carbon Nanotube-based Synapses

Author

Derycke, V., Gacem, K, Retrouvey, J-M, Chabi, D, Agnus, G., Brunel, D., Cabaret, T., Fillaud, L., Segut, O., Filoramo, A., Zhao, W, Gamrat, C, Jousselme, B, Klein, J-O, Laboratoire Innovation en Chimie des Surfaces et NanoSciences (LICSEN UMR 3685), Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Energie (ex SIS2M) (NIMBE UMR 3685), Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-07-ARFU-0008,PANINI,Programme Architectures Nano-électroniques Intégrées Neuro Inspirées(2007), ANR-12-BS03-0004,Moorea,CIRCUITS A APPRENTISSAGE A BASE DE NANO-MEMRISTORS ORGANIQUES(2012), European Project: 216777,EC:FP7:ICT,FP7-ICT-2007-1,NABAB(2008), Laboratoire Innovation en Chimie des Surfaces et NanoSciences (LICSEN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Palacin, Serge, Architectures du futur - Programme Architectures Nano-électroniques Intégrées Neuro Inspirées - - PANINI2007 - ANR-07-ARFU-0008 - ARFU - VALID, BLANC - CIRCUITS A APPRENTISSAGE A BASE DE NANO-MEMRISTORS ORGANIQUES - - Moorea2012 - ANR-12-BS03-0004 - BLANC - VALID, and NAnocomputing Building blocks with Acquired Behaviour - NABAB - - EC:FP7:ICT2008-01-01 - 2010-12-31 - 216777 - VALID

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014

36. Temperature dependence of the conduction mechanisms through a Pb(Zr,Ti)O3 thin film

Author

Jégou, C. Michalas, L. Maroutian, T. Agnus, G. Koutsoureli, M. Papaioannou, G. Largeau, L. Troadec, D. Leuliet, A. Aubert, P. Lecoeur, Ph.

Abstract

The conduction mechanisms through a lead zirconate titanate (PZT) thin film grown by pulsed laser deposition with a La0.67Sr0.33MnO3 (LSMO) buffer layer on epitaxial Pt (111) were assessed in the 230-330 K temperature range. X-Ray diffraction and transmission electron microscopy evidenced a columnar growth of (001)- and (011)-oriented PZT grains. The leakage current through the Pt/PZT/LSMO/Pt structure was then systematically measured. From current vs. time curves, a threshold voltage was found below which stable and reproducible current values are obtained, thus avoiding resistance degradation. The conduction mechanism changes from interface controlled at low temperatures to bulk controlled around room temperature. The hopping-type conductivity evidenced above 270 K is consistent with the extended defects and columnar microstructure of the PZT film. © 2014 Elsevier B.V. All rights reserved.

Published
2014

37. Ferroelectric Pb Zr,Ti)O3 thin layers on SrTiO3/GaAs

Author

Meunier, Benjamin, Louahadj, Lamis, LE BOURDAIS, D., Largeau, L., Agnus, G., MAZET, Lucie, Bachelet, Romain, Regreny, Philippe, Albertini, David, Pillard, V., Dubourdieu, Catherine, Gautier, Brice, Lecoeur, P., Saint-Girons, Guillaume, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Dispositifs Electroniques (INL - DE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

may 11-15 2014; International audience; no abstract

Published
2014

38. Ferroelectric Pb(Zr,Ti)O 3 epitaxial layers on GaAs

Author

Louahadj, L., Le Bourdais, D., Largeau, L., Agnus, G., Mazet, L., Bachelet, R., Regreny, P., Albertini, D., Pillard, V., Dubourdieu, C., Gautier, B., Lecoeur, P., Saint-Girons, Guillaume, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Analyse et de Mathématiques Appliquées (LAMA), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Fédération de Recherche Bézout-Université Paris-Est Marne-la-Vallée (UPEM), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), INL - Dispositifs Electroniques (INL - DE), IEF, Université Paris-Sud - Paris 11 (UP11), Saint-Girons, Guillaume, Université Paris-Est Marne-la-Vallée (UPEM)-Fédération de Recherche Bézout-Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon, Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2013

39. Strain control of domain wall pinning in hybrid piezoelectric-magneto-resistive nanodevices

Author

Lei, N., Devolder, T., Agnus, G., Aubert, P., DANIEL, Laurent, Kim, J.V., Fohtung, E., Shpyrko, Oleg, Fullerton, E., Laboratoire de génie électrique de Paris (LGEP), and Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2013

40. Temperature dependence of the conduction mechanisms through a PZT thin film

Author

Jegou, C., MICHALAS, L., Maroutian, T., Agnus, G., Aubert, P., Lecoeur, P., KOUTSOURELI, M., Papaioannou, G., Largeau, L., Troadec, D., Leuliet, A., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2013

41. Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures

Author

Lei, N., Devolder, T., Agnus, G., Aubert, P., Daniel, L., Kim, J. -V, Zhao, W., Trypiniotis, Theodossis, Cowburn, R. P., Chappert, C., Ravelosona, D., Lecoeur, P., ICHAMS - Equipe Interaction Champs - Matériaux et Structures, Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), and Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS)

Subjects
geometry, Materials science, Kerr effect, Magnetoresistance, Magnetic domain, General Physics and Astronomy, magnetic field, anisotropy, 02 engineering and technology, electronic equipment, Bioinformatics, 01 natural sciences, 7. Clean energy, Article, General Biochemistry, Genetics and Molecular Biology, Condensed Matter::Materials Science, 0103 physical sciences, energy efficiency, 010302 applied physics, magnetic anisotropy, Multidisciplinary, hybrid, piezoelectricity, Spintronics, Magnetic logic, business.industry, electronics, article, integrated circuit, Magnetostriction, General Chemistry, 021001 nanoscience & nanotechnology, electric field, Magnetic anisotropy, Domain wall (magnetism), nanowire, Optoelectronics, 0210 nano-technology, business
Abstract

The control of magnetic order in nanoscale devices underpins many proposals for integrating spintronics concepts into conventional electronics. A key challenge lies in finding an energy-efficient means of control, as power dissipation remains an important factor limiting future miniaturization of integrated circuits. One promising approach involves magnetoelectric coupling in magnetostrictive/piezoelectric systems, where induced strains can bear directly on the magnetic anisotropy. While such processes have been demonstrated in several multiferroic heterostructures, the incorporation of such complex materials into practical geometries has been lacking. Here we demonstrate the possibility of generating sizeable anisotropy changes, through induced strains driven by applied electric fields, in hybrid piezoelectric/spin-valve nanowires. By combining magneto-optical Kerr effect and magnetoresistance measurements, we show that domain wall propagation fields can be doubled under locally applied strains. These results highlight the prospect of constructing low-power domain wall gates for magnetic logic devices., The use of electric fields to control the magnetization of ferromagnetic materials could enable more efficient electronics. Lei et al. show that by applying lateral strain to a magnetostrictive nanowire with a piezoelectric, voltage-controlled gating of magnetic domain wall motion in the wire can be achieved.

Published
2013
Full Text
View/download PDF

42. Toward nanotube-based circuits with learning capabilities

Author

Gacem, K., Retrouvey, J.M., Agnus, G., Brunel, D., Zhao, W., Filoramo, A., Lenfant, S., Vuillaume, D., Gamrat, C., Klein, J.O., Derycke, Vincent, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Université Paris-Sud - Paris 11 (UP11)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience

Published
2011

45. Carbon nanotube programmable devices for adaptive architectures

Author

Agnus, G., Zhao, W., Derycke, Vincent, Filoramo, A., Lenfant, S., Vuillaume, D., Gamrat, C., Bourgoin, J.P., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2009

46. Fast and compact simulation models for a variety of FET nano devices by the CMOS EKV equations

Author

Serrano-Gotarredona, T., Linares-Barranco, B., Agnus, G., Vincent Derycke, Bourgoin, J. -P, Alibart, F., Vuillaume, D., Sohn, J., Bendall, J., Welland, M. E., Gamrat, C., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Computer Science::Emerging Technologies, Hardware_INTEGRATEDCIRCUITS, Hardware_PERFORMANCEANDRELIABILITY, Hardware_LOGICDESIGN
Abstract

In this paper we explore the possibility of using the equations of a well known compact model for CMOS transistors as a parameterized compact model for a variety of FET based nano-technology devices. This can turn out to be a practical preliminary solution for system level architectural researchers, who could simulate behaviourally large scale systems, while more physically based models become available for each new device. We have used a four parameter version of the EKV model equations and verified that fitting errors are similar to those when using them for standard CMOS FET transistors. The model has been used for fitting measured data from three types of FET nano-technology devices obeying different physics, for different fabrication steps, and under different programming conditions. © 2009 IEEE NANO Organizers.

Published
2009

47. Carbon nanotube programmable transistors for adaptive circuit architectures

Author

Agnus, G., Zhao, W., Filoramo, A., Lenfant, S., Vuillaume, D., Gamrat, C., Bourgoin, J.P., Derycke, Vincent, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2009

48. Dynamic performances of carbon nanotube transistors and programmable devices for adaptive architectures

Author

Derycke, Vincent, Agnus, G., Nougaret, L., Zhao, W., Green, A.A., Lenfant, S., Happy, H., Dambrine, G., Vuillaume, D., Gamrat, C., Filoramo, A., Hersam, M.C., Bourgoin, J.P., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2009

49. Optoelectronic programming of carbon nanotube devices and circuits

Author

Agnus, G., Anghel, C., Zhao, W., Derycke, Vincent, Filoramo, A., Thuillier, Y., Lenfant, S., Vuillaume, D., Giffard, B., Gamrat, C., Bourgoin, J.P., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2008

50. 2-chamber AFM: probing membrane proteins separating two aqueous compartments

Author

Rp, Gonçalves, Agnus, G., Sens, P., Houssin, C., Scheuring, S., Bartenlian, B., Institut de génétique et microbiologie [Orsay] (IGM), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SDV.MP]Life Sciences [q-bio]/Microbiology and Parasitology, [SDV.BBM]Life Sciences [q-bio]/Biochemistry, Molecular Biology
Published
2006

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