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135 results on '"Agnus, Guillaume"'

1. Magneto-optical properties of textured La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin films integrated on silicon via a Ca$_2$Nb$_3$O$_{10}$ nanosheet layer

Author

Maleček, Tomáš, Agnus, Guillaume, Maroutian, Thomas, Horák, Lukáš, Machovec, Petr, Demange, Valérie, Melzer, Aleš, Prokleška, Jan, Lecoeur, Philippe, and Veis, Martin

Subjects
Condensed Matter - Materials Science
Abstract

We demonstrate the possibility of growing textured La$_{2/3}$Sr$_{1/3}$MnO$_3$ (LSMO) thin films on silicon substrates with magneto-optical and optical properties comparable to high-quality epitaxial layers grown on bulk SrTiO$_3$ (STO). The pulsed laser deposition growth of LSMO is achieved by a two-dimensional nanosheet (NS) seed layer of Ca$_2$Nb$_3$O$_{10}$ (CNO) inducing epitaxial stabilization of LSMO films. The resulting layers possess a higher Curie temperature and a lower overall magnetization than samples of LSMO on STO. Spectra of the full permittivity tensor were calculated from optical and magneto-optical measurements. Spectral dependencies of both the diagonal and off-diagonal elements share many similarities between the LSMO/NS/Si and LSMO/STO samples. These similarities indicate comparable electronic structures of the layers and demonstrate comparable optical quality of textured LSMO on NS/Si and epitaxial LSMO on STO.

Published
2023

2. Universal Fabrication of Two-Dimensional Electron Systems in Functional Oxides

Author

Rödel, Tobias Chris, Fortuna, Franck, Sengupta, Shamashis, Frantzeskakis, Emmanouil, Fèvre, Patrick Le, Bertran, François, Mercey, Bernard, Matzen, Sylvia, Agnus, Guillaume, Maroutian, Thomas, Lecoeur, Philippe, and Felipe~Santander-Syro, Andrés

Subjects
Condensed Matter - Strongly Correlated Electrons
Abstract

Two-dimensional electron systems (2DESs) in functional oxides are promising for applications, but their fabrication and use, essentially limited to SrTiO$_3$-based heterostructures, are hampered by the need of growing complex oxide over-layers thicker than 2~nm using evolved techniques. This work shows that thermal deposition of a monolayer of an elementary reducing agent suffices to create 2DESs in numerous oxides., Comment: Main Text + Supporting Information, 25 pages, 11 figures

Published
2021
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3. Stress measurements in silicon photonics by integrated Raman spectroscopy

Author

Marcaud, Guillaume, Berciano, Mathias, Lafforgue, Christian, Alonso-Ramos, Carlos, Roux, Xavier Le, Maroutian, Thomas, Agnus, Guillaume, Aubert, Pascal, Largeau, Ludovic, Cassan, Eric, Matzen, Sylvia, Marris-Morini, Delphine, Lecoeur, Philippe, and Vivien, Laurent

Subjects
Physics - Applied Physics
Abstract

Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical stress, often detrimental for the behavior of optical components. Existing experiments failed to carefully analyze the stress in such integrated optical devices due to the requirement in terms of feature sizes, few hundreds of nanometers, and 3D-stacked integration. We present for the first time the characterization of the stress tensor of a silicon waveguide using Integrated Raman Spectroscopy (IRS). This experimental technique is directly sensitive to the effective stress, which involves changes in optical properties of the guided mode, at the working wavelength and polarization state of the photonic component. The experimental stress tensor is in good agreement with simulations.

Published
2020

4. Highly anisotropic magnetic domain wall behavior in-plane magnetic films

Author

Zhou, Xiaochao, Vernier, Nicolas, Agnus, Guillaume, Eimer, Sylvain, and Zhai, Ya

Subjects
Condensed Matter - Materials Science
Abstract

We have studied nucleation of magnetic domains and propagation of magnetic domain walls (DWs) induced by pulsed magnetic field in a ferromagnetic film with in-plane uniaxial anisotropy. Different from what have been seen up to now in out-of-plane anisotropy films, the nucleated domains have a rectangular shape in which a pair of the opposite sides are perfectly linear DWs, while the other pair present zigzags. This can be explained by magnetostatic optimization, knowing that the pulse field is applied parallel to the easy magnetization axis. The field induced propagation of these two DW types are very different. The linear ones follow a creep law identical to what is usually observed in out-of-plane films, when the velocity of zigzag DWs depends linearly on the applied field amplitude down to very low field. This most unusual feature can be explained by the shape of the DW, which makes it possible to go round the pinning defects. Thanks to that, it seems that propagation of zigzag walls agrees with the 1D model, and these results provide a first experimental evidence of the 1D model relevance in two dimensional ferromagnetic thin films. Let's note that it is the effective DW width parallel to DW propagation direction that matters in the 1D model formula, which is a relevant change when dealing with zigzag DWs., Comment: 20 pages, 13 figures

Published
2020
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5. Magnetic domain wall motion in SrRuO$_3$ thin films

Author

Zahradník, Martin, Uhlířová, Klára, Maroutian, Thomas, Kurij, Georg, Agnus, Guillaume, Veis, Martin, and Lecoeur, Philippe

Subjects
Condensed Matter - Materials Science
Abstract

Influence of substrate miscut on magnetization dynamics in SrRuO$_3$ (SRO) thin films was studied. Two films were grown on SrTiO$_3$ substrates with high ($\sim1^{\circ}$) and low ($\sim0.1^{\circ}$) miscut angles, respectively. As expected, high miscut angle leads to suppression of multi-variant growth. By means of SQUID magnetometry, comparable relaxation effects were observed in both the multi-variant and the nearly single-variant sample. Differences in the magnetization reversal process were revealed by magnetic force microscopy. It showed that the multi-variant growth leads to higher density of defects acting as pinning or nucleation sites for magnetic domains, which consequently results in deterioration of magnetic properties. It was demonstrated that the use of high miscut substrate is important for fabrication of high quality SRO thin films with low density of crystallographic defects and excellent magnetic properties., Comment: 9 pages plus graphical abstract and highlights

Published
2019
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6. Magneto-ionic control of spin polarization in magnetic tunnel junctions

Author

Wei, Yingfen, Matzen, Sylvia, Quinteros, Cynthia P., Maroutian, Thomas, Agnus, Guillaume, Lecoeur, Philippe, and Noheda, Beatriz

Subjects
Condensed Matter - Materials Science
Abstract

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field switching. Here we show that, under electric field cycling of large enough magnitude, the TER can reach values as large as 10^6%. Moreover, concomitant with this TER enhancement, the devices develop electrical control of spin polarization, with sign reversal of the TMR effect. Currently, this intermediate state exists for a limited number of cycles and understanding the origin of these phenomena is key to improve its stability. The experiments presented here point to the magneto-ionic effect as the origin of the large TER and strong magneto-electric coupling, showing that ferroelectric polarization switching of the tunnel barrier is not the main contribution.

Published
2019
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7. Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers

Author

Wei, Yingfen, Matzen, Sylvia, Agnus, Guillaume, Salverda, Mart, Nukala, Pavan, Maroutian, Thomas, Chen, Qihong, Ye, Jianting, Lecoeur, Philippe, and Noheda, Beatriz

Subjects
Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic devices. In parallel, Hafnia based ferroelectrics are showing great potential for device miniaturization down to the nanoscale. Here we utilize ferroelectric Hf0.5Zr0.5O2 (HZO) with thickness of only 2 nm, epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a large band-gap insulating barrier integrated in MFTJs with cobalt top electrodes. As previously reported for other MFTJs with similar electrodes, the tunneling magnetoresistance (TMR) can be tuned and its sign can even be reversed by the bias voltage across the junction. We demonstrate four non-volatile resistance states generated by magnetic and electric field switching with high reproducibility in this system.

Published
2019
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8. Domain Wall Motion Driven by Laplace Pressure in CoFeB-MgO Nanodots with Perpendicular Anisotropy

Author

Zhang, Yu, Zhang, Xueying, Vernier, Nicolas, Zhang, Zhizhong, Agnus, Guillaume, Coudevylle, Jean-Rene, Lin, Xiaoyang, Zhang, Yue, Zhang, You-Guang, Zhao, Weisheng, and Ravelosona, Dafine

Subjects
Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 {\mu}m. Contrary to previous experiments, the switching field distribution is shifted toward lower magnetic fields as the size of the elements is reduced with a mean switching field varying as 1/w. We show that this mechanism can be explained by the nucleation of a pinned magnetic domain wall (DW) at the edges of the nanodots where damages are introduced by the patterning process. As the surface tension (Laplace pressure) applied on the DW increases when reducing the size of the nanodots, we demonstrate that the depinning field to reverse the entire elements varies as 1/w. These results suggest that the presence of DWs has to be considered in the switching process of nanoscale elements and open a path toward scalable spintronic devices.

Published
2017
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9. Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Author

Zhang, Yu, Lin, Xiaoyang, Adam, Jean-Paul, Agnus, Guillaume, Cai, Wenlong, Coudevylle, Jean-Rene, Isac, Nathalie, Yang, Jianlei, Yang, Huaiwen, Kang, Wang, Cao, Kaihua, Cui, Hushan, Zhang, Deming, Zhang, Youguang, Zhao, Chao, Zhao, Weisheng, and Ravelosona, Dafine

Subjects
Physics - Applied Physics
Abstract

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory (MRAM) and resistive random access memory (RRAM) suffer from limitations of low tunnel magnetoresistance (TMR), low access speed or finite endurance. NVMs with synergetic advantages are still highly desired for future computer architectures. Here, we report a heterogeneous memristive device composed of a magnetic tunnel junction (MTJ) nanopillar surrounded by resistive silicon switches, named resistively enhanced MTJ (Re-MTJ), that may be utilized for novel memristive memories, enabling new functionalities that are inaccessible for conventional NVMs. The Re-MTJ device features a high ON/OFF ratio of >1000% and multilevel resistance behaviour by combining magnetic switching together with resistive switching mechanisms. The magnetic switching originates from the MTJ, while the resistive switching is induced by a point-switching filament process that is related to the mobile oxygen ions. Microscopic evidence of silicon aggregated as nanocrystals along the edges of the nanopillars verifies the synergetic mechanism of the heterogeneous memristive device. This device may provide new possibilities for advanced memristive memory and computing architectures, e.g., in-memory computing and neuromorphics.

Published
2017
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10. Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy

Author

Lin, Weiwei, Vernier, Nicolas, Agnus, Guillaume, Garcia, Karin, Ocker, Berthold, Zhao, Weisheng, Fullerton, Eric E., and Ravelosona, Dafiné

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics
Abstract

Electric field effects in ferromagnetic/oxide dielectric structures provide a new route to control domain wall (DW) dynamics with low power dissipation. However, electric field effects on DW velocities have only been observed so far in the creep regime where DW velocities are low due to strong interactions with pinning sites. Here, we show gate voltage modulation of DW velocities ranging from the creep to the flow regime in Ta/Co40Fe40B20/MgO/TiO2 structures with perpendicular magnetic anisotropy. We demonstrate a universal description of the role of applied electric fields in the various pinning dependent regimes by taking into account an effective magnetic field being linear with the electric field. In addition, the electric field effect is found to change sign in the Walker regime. Our work opens new opportunities for the study and optimization of electric field effect at ferromagnetic metal/insulator interfaces., Comment: 21 pages, 6 figures

Published
2014
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11. Interfacial charge accumulation effect on magnetic domain wall nucleation and propagation in a Pt/Co/Pt/Al2O3 structure

Author

Lin, Weiwei, Vernier, Nicolas, Agnus, Guillaume, Lei, Na, Eimer, Sylvain, and Ravelosona, Dafiné

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics
Abstract

We report direct observation of charge accumulation effect on magnetization reversal in a Pt/Co(0.5 nm)/Pt(0.5 nm)/Al2O3 structure with perpendicular anisotropy. By imaging magnetic domain with polar Kerr microscopy, we evidence that positive charges accumulating at the Pt/Al2O3 interface result in favoring magnetic domain wall propagation, while negative charges hinder domain wall nucleation and propagation. Our results suggest that magnetic properties in Co layer can be strongly influenced by 5d electron accumulation/depletion in an ultrathin Pt layer., Comment: 4 pages, 4 figures, added references

Published
2012

12. Electric field control of domain wall logic in piezoelec-tric/ferromagnetic nanodevices

Author

Lei, Na, Devolder, Thibaut, Agnus, Guillaume, Aubert, Pascal, Daniel, Laurent, Kim, Joo-Von, Zhao, Weisheng, Chappert, Claude, Ravelosona, Dafiné, and Lecoeur, Philippe

Subjects
Condensed Matter - Materials Science
Abstract

Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in magnetostrictive/piezoelectric systems may pave the way toward ultra low-power electronics. Although the former effect has been demon-strated in several multiferroic heterostructures, the incorporation of such complex geometries into practical magnetic memory and logic nanodevices has been lacking. Here, we demonstrate the room temperature control of a domain wall gate with an electric field in a nanowire consisting of a laterally polarized piezoelectric bar inducing a giant strain in a ferromagnetic spin-valve. We propose to use such novel domain wall gate as an elementary brick to generate a complete set of boolean logic functions or stabilize domain walls in high density memory applications., Comment: 16 pages, 4 figures

Published
2012

14. Ferroelectric ZrO2 phases from infrared spectroscopy

Author

El Boutaybi, Ali, primary, Cervasio, Rebecca, additional, Degezelle, Alban, additional, Maroutian, Thomas, additional, Brubach, Jean-Blaise, additional, Demange, Valérie, additional, Largeau, Ludovic, additional, Verseils, Marine, additional, Matzen, Sylvia, additional, Agnus, Guillaume, additional, Vivien, Laurent, additional, Karamanis, Panagiotis, additional, Rérat, Michel, additional, Roy, Pascale, additional, and Lecoeur, Philippe, additional

Published
2023
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15. Functional Model of Carbon Nanotube Programmable Resistors for Hybrid Nano/CMOS Circuit Design

Author

Zhao, Weisheng, Agnus, Guillaume, Derycke, Vincent, Filoramo, Ariana, Gamrat, Christian, Bourgoin, Jean-Philippe, Akan, Ozgur, Series editor, Bellavista, Paolo, Series editor, Cao, Jiannong, Series editor, Dressler, Falko, Series editor, Ferrari, Domenico, Series editor, Gerla, Mario, Series editor, Kobayashi, Hisashi, Series editor, Palazzo, Sergio, Series editor, Sahni, Sartaj, Series editor, Shen, Xuemin (Sherman), Series editor, Stan, Mircea, Series editor, Xiaohua, Jia, Series editor, Zomaya, Albert, Series editor, Coulson, Geoffrey, Series editor, Schmid, Alexandre, editor, Goel, Sanjay, editor, Wang, Wei, editor, Beiu, Valeriu, editor, and Carrara, Sandro, editor

Published
2009
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17. Magneto-Ionics in Annealed W/CoFeB/HfO2 Thin Films

Author

Pachat, Rohit, Ourdani, Djoudi, Syskaki, Maria Andromachi, Lamperti, Alessio, Roy, Subhajit, Chen, Song, Di Pietro, Adriano, Largeau, Ludovic, Massouras, Maryam, Balan, Cristina, van der Jagt, Johannes Wilhelmus, Agnus, Guillaume, Roussigné, Yves, Gabor, Mihai, Chérif, Salam Mourad, Durin, Gianfranco, Ono, Shimpei, Langer, Jürgen, Querlioz, Damien, Ravelosona, Dafiné, Belmeguenai, Mohamed, and Herrera Diez, Liza

Subjects
annealing, Dzyaloshinskii-Moriya interaction, magneto-ionics, magneto-ionic reversibility
Abstract

The magneto-ionic modulation of the Dzyaloshinskii–Moriya interaction (DMI) and the perpendicular magnetic anisotropy (PMA), in W/CoFeB/HfO2 stacks annealed at different temperatures and for varying annealing times, are presented in this work. A large modulation of PMA and DMI is observed in the systems annealed at 390 and 350 ° C, whereas no response to voltage is observed in the as-grown samples. A strong DMI is only observed in the samples annealed at 390 ° C for 1 h, while PMA is present for all annealing times at temperatures of 390 and 350 ° C. Magnetic properties including domain wall velocity improve drastically with increasing the annealing temperature and time, while the magneto-ionic reversibility is increasingly compromised. The changes in PMA and DMI induced by the gate voltages in the samples annealed at 390 ° C are permanent, while partial reversibility is only observed for the samples annealed at 350 ° C for short times. This dependence of reversibility on post-grown annealing has been associated to the influence of crystallization on ion mobility. These results show that a compromise between the enhancement of the magnetic properties and the magneto-ionic performance could be needed in systems requiring annealing to develop PMA and DMI.

Published
2022

18. Ferroelectric ZrO2 phases from infrared spectroscopy.

Author

El Boutaybi, Ali, Cervasio, Rebecca, Degezelle, Alban, Maroutian, Thomas, Brubach, Jean-Blaise, Demange, Valérie, Largeau, Ludovic, Verseils, Marine, Matzen, Sylvia, Agnus, Guillaume, Vivien, Laurent, Karamanis, Panagiotis, Rérat, Michel, Roy, Pascale, and Lecoeur, Philippe

Abstract

We investigate ferroelectric thin films of ZrO2 experimentally and theoretically using infrared (IR) absorption spectroscopy coupled with density functional theory (DFT) calculations. The IR absorbance is measured using IR synchrotron radiation, while the theoretical investigations are performed using CRYSTAL suite of quantum chemical programs. Theoretically, we consider the two polar experimentally observed orthorhombic Pbc21, and rhombohedral R3m phases, as well as two non-polar phases, tetragonal P42/nmc, and ground state monoclinic P21/c. Experimentally, we follow two approaches to enable IR measurements: (i) direct growth of ZrO2 films on high-resistive silicon substrates with either a La0.67Sr0.33MnO3 (LSMO) or ZnO buffer layer to induce tensile and compressive strain, respectively, and (ii) transfer of ZrO2 films, grown initially on LSMO-buffered SrTiO3 or DyScO3 substrates, onto high-resistive silicon substrate as membranes. The far-IR structural signature of the films is assigned to a tetragonal phase, mainly when the film is under tensile strain; however, the ZrO2 film shows a ferroelectric signature. Under compressive strain, an early stage of phase transition from the non-polar P42/nmc phase to the polar R3m phase is observed. Our findings open new paths for investigating the origin of ferroelectricity in ZrO2-based ferroelectric thin films. [ABSTRACT FROM AUTHOR]

Published
2023
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19. Magneto‐Ionics in Annealed W/CoFeB/HfO2 Thin Films

Author

Pachat, Rohit, primary, Ourdani, Djoudi, additional, Syskaki, Maria‐Andromachi, additional, Lamperti, Alessio, additional, Roy, Subhajit, additional, Chen, Song, additional, Pietro, Adriano Di, additional, Largeau, Ludovic, additional, Juge, Roméo, additional, Massouras, Maryam, additional, Balan, Cristina, additional, van der Jagt, Johannes Wilhelmus, additional, Agnus, Guillaume, additional, Roussigné, Yves, additional, Gabor, Mihai, additional, Chérif, Salim Mourad, additional, Durin, Gianfranco, additional, Ono, Shimpei, additional, Langer, Jürgen, additional, Querlioz, Damien, additional, Ravelosona, Dafiné, additional, Belmeguenai, Mohamed, additional, and Herrera Diez, Liza, additional

Published
2022
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20. Epitaxial Growth of Ferroelectric Pb(Zr,Ti)O3 Layers on GaAs

Author

Meunier, Benjamin, Louahadj, Lamis, Le Bourdais, David, Largeau, Ludovic, Agnus, Guillaume, Lecoeur, Philippe, Pillard, Valérie, Mazet, Lucie, Bachelet, Romain, Regreny, Philippe, Botella, Claude, Grenet, Geneviève, Albertini, David, Dubourdieu, Catherine, Gautier, Brice, and Saint-Girons, Guillaume

Published
2014
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22. Development of an AFM-based technique for extended write/erase endurance measurements of memristive cells

Author

Mai, Van, Nguyen, Van, Senzier, Pascale, Pasquier, Claude, Wang, Kang, Rozenberg, Marcelo, Giapintzakis, John, Kyriakides, Evripides, Maroutian, Thomas, Agnus, Guillaume, Lecoeur, Philippe, Nguyen, Ngoc, Oukassi, Sami, Salot, Raphaël, Alamarguy, David, Chrétien, Pascal, Lacroix, Jean- Christophe, Schneegans, Olivier, Le Quy Don Technical University = Le Quy Don University of Science and Technology, Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Physique des Solides (LPS), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia], Centre de Nanosciences et de Nanotechnologies (C2N), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Génie électrique et électronique de Paris (GeePs), CentraleSupélec-Sorbonne Université (SU)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Interfaces, Traitements, Organisation et Dynamique des Systèmes (ITODYS (UMR_7086)), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), Le Quy Don Technical University (LQDTU), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia] (UCY), and Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2021

23. Magneto-Ionics in Annealed W/CoFeB/HfO2 Thin Films.

Author

Pachat, Rohit, Ourdani, Djoudi, Syskaki, Maria-Andromachi, Lamperti, Alessio, Roy, Subhajit, Song Chen, Di Pietro, Adriano, Largeau, Ludovic, Juge, Roméo, Massouras, Maryam, Balan, Cristina, van der Jagt, Johannes Wilhelmus, Agnus, Guillaume, Roussigné, Yves, Gabor, Mihai, Chérif, Salim Mourad, Durin, Gianfranco, Ono, Shimpei, Langer, Jürgen, and Querlioz, Damien

Subjects
THIN films, PERPENDICULAR magnetic anisotropy, MAGNETIC films, ION mobility, MAGNETIC properties, IONIC mobility, MOSSBAUER spectroscopy
Abstract

The magneto-ionic modulation of the Dzyaloshinskii-Moriya interaction (DMI) and the perpendicular magnetic anisotropy (PMA), in W/CoFeB/HfO2 stacks annealed at different temperatures and for varying annealing times, are presented in this work. A large modulation of PMA and DMI is observed in the systems annealed at 390 and 350 °C, whereas no response to voltage is observed in the as-grown samples. A strong DMI is only observed in the samples annealed at 390 °C for 1 h, while PMA is present for all annealing times at temperatures of 390 and 350 °C. Magnetic properties including domain wall velocity improve drastically with increasing the annealing temperature and time, while the magneto-ionic reversibility is increasingly compromised. The changes in PMA and DMI induced by the gate voltages in the samples annealed at 390 °C are permanent, while partial reversibility is only observed for the samples annealed at 350 °C for short times. This dependence of reversibility on post-grown annealing has been associated to the influence of crystallization on ion mobility. These results show that a compromise between the enhancement of the magnetic properties and the magneto-ionic performance could be needed in systems requiring annealing to develop PMA and DMI. [ABSTRACT FROM AUTHOR]

Published
2022
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24. Nanosession: Valence Change Memories - Redox Mechanism and Modelling

Author

Ielmini, D., primary, Larentis, S., additional, Balatti, S., additional, Nardi, F., additional, Gilmer, D., additional, Menzel, Stephan, additional, Marchewka, Astrid, additional, Böttger, Ulrich, additional, Waser, Rainer, additional, Balcells, Ll., additional, Pomar, A., additional, Galceran, R., additional, Konstantinovic, Z., additional, Peña, L., additional, Bozzo, B., additional, Sandiumenge, F., additional, Martinez, B., additional, Riess, Ilan, additional, Kalaev, Dima, additional, Lim, Hyungkwang, additional, Jang, Ho-Won, additional, Hwang, Cheol Seong, additional, Jeong, Doo Seok, additional, Schmelzer, Sebastian, additional, Schneegans, Olivier, additional, Mai, Van Huy, additional, Moradpour, Alec, additional, Auban-Senzier, Pascale, additional, Pasquier, Claude, additional, Wang, Kang, additional, Franger, Sylvain, additional, Revcolevschi, Alexandre, additional, Svoukis, Efthymios, additional, Giapintzakis, John, additional, Lecoeur, Philippe, additional, Aubert, Pascal, additional, Agnus, Guillaume, additional, Maroutian, Thomas, additional, Salot, Raphaël, additional, and Chrétien, Pascal, additional

Published
2013
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25. Hybrid silicon photonics based on doped-crystalline oxides for on-chip light amplification

Author

Ruiz-Caridad, Alicia, primary, Marcaud, Guillaume, additional, Lafforgue, Christian, additional, Le Roux, Xavier, additional, Manel Ramirez, Joan, additional, Durán-Valdeiglesias, Elena, additional, Largeau, Ludovic, additional, Maroutian, Thomas, additional, Matzen, Sylvia, additional, Collin, Stephane, additional, Alonso-Ramos, Carlos, additional, Agnus, Guillaume, additional, Guerbert, Sylvain, additional, Monfray, Stephane, additional, Boeuf, Frederic, additional, Vakarin, Vladyslav, additional, Cassan, Eric, additional, Marris-Morini, Delphine, additional, Lecoeur, Philippe, additional, and Vivien, Laurent, additional

Published
2021
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26. Understanding nanoscale structural distortions in Pb(Zr0.2Ti0.8)O3 by utilizing X-ray nanodiffraction and clustering algorithm analysis

Author

Christiansen-Salameh, Joyce, primary, Yang, Morris, additional, Rippy, Geoffrey, additional, Li, Jianheng, additional, Cai, Zhonghou, additional, Holt, Martin, additional, Agnus, Guillaume, additional, Maroutian, Thomas, additional, Lecoeur, Philippe, additional, Matzen, Sylvia, additional, and Kukreja, Roopali, additional

Published
2021
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28. Erbium-Doped Yttria-Stabilized Zirconia Thin Layers for Photonic Applications

Author

Ruiz-Caridad, Alicia, primary, Collin, Stephane, additional, Alonso-Ramos, Carlos, additional, Agnus, Guillaume, additional, Guerber, Sylvain, additional, Baudot, Charles, additional, Boeuf, Frederic, additional, Monfray, Stephane, additional, Cremer, Sebastien, additional, Vakarin, Vladyslav, additional, Cassan, Eric, additional, Marcaud, Guillaume, additional, Marris-Morini, Delphine, additional, Lecoeur, Philippe, additional, Vivien, Laurent, additional, Ramirez, Joan Manel, additional, Zhang, Jianhao, additional, Duran-Valdeiglesias, Elena, additional, Lafforge, Christian, additional, Largeau, Ludovic, additional, Maroutian, Thomas, additional, and Matzen, Sylvia, additional

Published
2020
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29. Magnetic Tunnel Junctions Based on Ferroelectric Hf 0.5 Zr 0.5 O 2 Tunnel Barriers

Author

Wei, Yingfen, Matzen, Sylvia, Maroutian, Thomas, Agnus, Guillaume, Salverda, Mart, Nukala, Pavan, Chen, Qihong, Ye, Jianting, Lecoeur, Philippe, Noheda, Beatriz, Zernite institute for advanced materials, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Zernike Institute for Advanced Materials, and University of Groningen [Groningen]

Subjects
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019
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30. Electronic structure of La 2 / 3 Sr 1 / 3 MnO 3 : Interplay of oxygen octahedra rotations and epitaxial strain

Author

Zahradník, Martin, Maroutian, Thomas, Zelený, Martin, Horák, Lukáš, Kurij, Georg, Maleček, Tomáš, Beran, Lukáš, Višňovský, Štefan, Agnus, Guillaume, Lecoeur, Philippe, Veis, Martin, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019
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31. Erbium-doped Yttria-stabilized Zirconia thin layers for photonic applications

Author

Ruiz-Caridad, Alicia, Marcaud, Guillaume, Manel Ramirez, Joan, Largeau, Ludovic, Maroutian, Thomas, Matzen, Sylvia, Alonso-Ramos, Carlos, Agnus, Guillaume, Guerber, Sylvain, Baudot, Charles, Boeuf, Frederic, Vakarin, Vladyslav, Duran-Valdeiglesias, Elena, Cassan, Eric, Marris-Morini, Delphine, Lecoeur, Philippe, Vivien, Laurent, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and Ruiz-Caridad, Alicia

Subjects
yttria-stabilized zirconia, [PHYS]Physics [physics], functional oxides, nanophotonics, rare-earth, hybrid photonic platform, [PHYS] Physics [physics], optical gain
Abstract

International audience; Near-infrared (near-IR) integrated photonic devices in silicon based platforms have been studied over the last decades for applications such as on-chip optical communications and sensing. Hybrid integration of functional oxides to search the limits of low power consumption has been a challenge overcome by material engenieering. In this regard, Yttria-Stabilized Zirconia (YSZ) stands as an interesting material for its structural, chemical and optical properties which includes transparency range from the visible to the mid-IR wavelength range. In this regard, we recently demonstrated YSZ waveguides with propagation losses as low as 2 dB/cm at a wavelength of 1380 nm [2]. Based on the encouraging preliminary results, we have recently explored the possibility to introduce active rare-earth dopants into YSZ waveguides to demonstrate on-chip optical amplifiers based on YSZ. In this study, we introduced multilayer approach depositing by pulsed laser deposition (PLD) technique by Er 3+ ions, providing outstanding luminescence around λ = 1.54 µm, in correspondence with C-band of telecommunications. Such active layers have been grown onto different platforms, including SiN and sapphire. The optical properties of Er-doped YSZ thin films growth on waveguides under resonant pumping will be discussed in this paper. These results pave the way towards the implementation of new rare-earth-doped functional oxides into hybrid photonic platforms in a customized and versatile manner, adding light amplification functionalities.

Published
2019

33. Third-order nonlinear optical susceptibility of crystalline oxide yttria-stabilized zirconia

Author

Marcaud, Guillaume, primary, Serna, Samuel, additional, Panaghiotis, Karamanis, additional, Alonso-Ramos, Carlos, additional, Le Roux, Xavier, additional, Berciano, Mathias, additional, Maroutian, Thomas, additional, Agnus, Guillaume, additional, Aubert, Pascal, additional, Jollivet, Arnaud, additional, Ruiz-Caridad, Alicia, additional, Largeau, Ludovic, additional, Isac, Nathalie, additional, Cassan, Eric, additional, Matzen, Sylvia, additional, Dubreuil, Nicolas, additional, Rérat, Michel, additional, Lecoeur, Philippe, additional, and Vivien, Laurent, additional

Published
2020
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35. Endurance measurements of LixCoO2-based ReRAM cells

Author

Nguyen, Van Son, Mai, Van Huy, Alexandre, Moradpour, Auban-Senzier, Pascale, Pasquier, Claude, Wang, Kang, Rozenberg, Marcelo J., Brun, Nathalie, March, Katia, Albouy, Pierre-Antoine, Giapintzakis, John, Mihailescu, C N, Kyriakides, Evripides, C.M., Orfanidou, Maroutian, Thomas, Agnus, Guillaume, Lecoeur, Philippe, Matzen, Silvia, Aubert, Pascal, Franger, Sylvain, Salot, Raphaël, Alamarguy, David, Chrétien, Pascal, Nukala, Pavan, Dkhil, Brahim, Schneegans, Olivier, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU), Le Quy Don Technical University = Le Quy Don University of Science and Technology, Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), University of Cyprus [Nicosia], Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), CEA-Grenoble DRT/LITEN/DEHT/SRGE/LQS, CEA, Laboratoire Structures, Propriétés et Modélisation des solides (SPMS), Institut de Chimie du CNRS (INC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University (LQDTU), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia] (UCY), and Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2018

36. Yttria-Stabilized Zirconia waveguides for linear and nonlinear optics

Author

Marcaud, Guillaume, Serna, Samuel, Matzen, Sylvia, Alonso-Ramos, Carlos, Le Roux, Xavier, Berciano, Mathias, Pillard, Valerie, Damas, Pedro, Maroutian, Thomas, Agnus, Guillaume, Largeau, Ludovic, Cassan, Eric, Marris-Morini, Delphine, Lecoeur, Philippe, Vivien, Laurent, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015), Marcaud, Guillaume, and Low power consumption silicon optoelectronics based on strain and refractive index engineering - POPSTAR - - H20202015-10-01 - 2020-10-01 - 647342 - VALID

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

37. Direct Evidence of Lithium Ion Migration in Resistive Switching of Lithium Cobalt Oxide Nanobatteries

Author

Nguyen, Van Son, Mai, Van Huy, Senzier, Pascale Auban, Pasquier, Claude, Wang, Kang, Rozenberg, Marcelo J., Brun, Nathalie, March, Katia, Jomard, François, Giapintzakis, John, Mihailescu, Cristian N., Kyriakides, Evripides, Nukala, Pavan, Maroutian, Thomas, Agnus, Guillaume, Lecoeur, Philippe, Matzen, Silvia, Aubert, Pascal, Franger, Sylvain, Salot, Raphaël, Albouy, Pierre-Antoine, Alamarguy, David, Dkhil, Brahim, Chrétien, Pascal, Schneegans, Olivier, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University (LQDTU), Laboratoire de Physique des Solides (LPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia] (UCY), National Institute for Lasers, Plasma, and Radiation Physics - INFLPR (ROMANIA), University of Cyprus = Université de Chypre, Laboratoire Structures, Propriétés et Modélisation des solides (SPMS), Institut de Chimie du CNRS (INC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Département d'Architectures, Conception et Logiciels Embarqués-LETI (DACLE-LETI), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0035,Nano-Saclay,Paris-Saclay multidisciplinary Nano-Lab(2010), Le Quy Don Technical University = Le Quy Don University of Science and Technology, Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), University of Cyprus [Nicosia], University of Cyprus, Cyprus, Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Giapintzakis, John [0000-0002-7277-2662], and Kyriakides, Evripides [0000-0002-5483-7119]

Subjects
Materials science, Direct evidence, thin film, Oxide, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Biomaterials, chemistry.chemical_compound, lithium‐ion batteries, 0103 physical sciences, General Materials Science, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Lithium cobalt oxide, nonvolatile memories, 010302 applied physics, business.industry, resistive switching, General Chemistry, 021001 nanoscience & nanotechnology, chemistry, Nanoelectronics, Resistive switching, oxides, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Lithium, Nanobatteries, 0210 nano-technology, business, Biotechnology
Abstract

International audience; Lithium cobalt oxide nanobatteries offer exciting prospects in the field of nonvolatile memories and neuromorphic circuits. However, the precise underlying resistive switching (RS) mechanism remains a matter of debate in two‐terminal cells. Herein, intriguing results, obtained by secondary ion mass spectroscopy (SIMS) 3D imaging, clearly demonstrate that the RS mechanism corresponds to lithium migration toward the outside of the Li$_x$CoO$_2$ layer. These observations are very well correlated with the observed insulator‐to‐metal transition of the oxide. Besides, smaller device area experimentally yields much faster switching kinetics, which is qualitatively well accounted for by a simple numerical simulation. Write/erase endurance is also highly improved with downscaling – much further than the present cycling life of usual lithium‐ion batteries. Hence very attractive possibilities can be envisaged for this class of materials in nanoelectronics.

Published
2018
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38. Functional oxide waveguides for nonlinear optics

Author

Marcaud, Guillaume, Serna, Samuel, Matzen, Sylvia, Alonso-Ramos, Carlos, Le Roux, Xavier, Berciano, Mathias, Pillard, Valerie, Damas, Pedro, Maroutian, Thomas, Agnus, Guillaume, Largeau, Ludovic, Cassan, Eric, Marris-Morini, Delphine, Lecoeur, Philippe, Vivien, Laurent, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

39. Functional oxides for linear and nonlinear optics

Author

Marcaud, Guillaume, Serna, Samuel, Matzen, Sylvia, Alonso-Ramos, Carlos, Le Roux, Xavier, Berciano, Mathias, Pillard, Valerie, Damas, Pedro, Maroutian, Thomas, Agnus, Guillaume, Largeau, Ludovic, Cassan, Eric, Marris-Morini, Delphine, Lecoeur, Philippe, Vivien, Laurent, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

43. Tuning Ultrafast Photoinduced Strain in Ferroelectric‐Based Devices

Author

Matzen, Sylvia, primary, Guillemot, Loïc, additional, Maroutian, Thomas, additional, Patel, Sheena K. K., additional, Wen, Haidan, additional, DiChiara, Anthony D., additional, Agnus, Guillaume, additional, Shpyrko, Oleg G., additional, Fullerton, Eric E., additional, Ravelosona, Dafiné, additional, Lecoeur, Philippe, additional, and Kukreja, Roopali, additional

Published
2019
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45. Optical gain evaluation on rare-earth doped Yttria-stabilized zirconia for hybrid integration on silicon photonics platforms

Author

Ruiz-Caridad, Alicia, primary, Marcaud, Guillaume, additional, Ramírez, Joan Manel, additional, Largeau, Ludovic, additional, Maroutian, Thomas, additional, Matzen, Sylvia, additional, Alonso-Ramos, Carlos, additional, Agnus, Guillaume, additional, Guerber, Sylvain, additional, Baudot, Charles, additional, Boeuf, Frédéric, additional, Vakarin, Vladyslav, additional, Duran-Valdeiglesias, Elena, additional, Cassan, Eric, additional, Marris-Morini, Delphine, additional, Lecoeur, Philippe, additional, and Vivien, Laurent, additional

Published
2019
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46. Towards optical amplification in complex functional oxides: exploring optical gain in erbium-doped yttria-stabilized zirconia waveguides

Author

Ruiz-Caridad, Alicia, primary, Marcaud, Guillaume, additional, Ramirez, Joan Manel, additional, Largeau, Ludovic, additional, Maroutian, Thomas, additional, Matzen, Sylvia, additional, Alonso-Ramos, Carlos A., additional, Agnus, Guillaume, additional, Cassan, Eric, additional, Marris-Morini, Delphine, additional, Lecoeur, Philippe, additional, and Vivien, Laurent, additional

Published
2019
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47. Cobalt oxide thin films towards non volatile memory applications

Author

Nguyen, van Son, Mai, van Huy, Alexandre, Moradpour, Auban Senzier, Pascale, Pasquier, Claude, Wang, Kang, Albouy, Pierre-Antoine, Rozenberg, Marcelo, Giapintzakis, John, Mihailescu, C. N., C.M., Orfanidou, Maroutian, Thomas, Lecoeur, Philippe, Agnus, Guillaume, Aubert, Pascal, Franger, Sylvain, Salot, Raphaël, Brun, Nathalie, March, Katia, Alamarguy, David, Chrétien, Pascal, Schneegans, Olivier, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University = Le Quy Don University of Science and Technology, Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), University of Cyprus [Nicosia], Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Département Intégration Hétérogène sur Silicium (DIHS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University (LQDTU), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia] (UCY), and Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2017

48. Effects of Voltage Pulse Characteristics on some Performance Parameters of LixCoO2-based Resistive Switching Memory Devices

Author

Nguyen, van Son, Mai, van Huy, Alexandre, Moradpour, Auban Senzier, Pascale, Pasquier, Claude, Kang, Wang, Albouy, Pierre-Antoine, Rozenberg, Marcelo, Giapintzakis, John, Mihailescu, C. N., C.M., Orfanidou, Maroutian, Thomas, Lecoeur, Philippe, Agnus, Guillaume, Aubert, Pascal, Franger, Sylvain, Salot, Raphaël, Brun, Nathalie, March, Katia, Alamarguy, David, Chrétien, Pascal, Schneegans, Olivier, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University = Le Quy Don University of Science and Technology, Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), University of Cyprus [Nicosia], Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University (LQDTU), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia] (UCY), and Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2017

49. Étude de la commutation de cellules de mémoires résistives d’oxydes de cobalt par AFM à pointe conductrice

Author

Nguyen, van Son, Mai, van Huy, Alexandre, Moradpour, Auban Senzier, Pascale, Pasquier, Claude, Kang, Wang, Albouy, Pierre-Antoine, Rozenberg, Marcelo, Giapintzakis, John, Mihailescu, C. N., C.M., Orfanidou, Maroutian, Thomas, Lecoeur, Philippe, Agnus, Guillaume, Aubert, Pascal, Franger, Sylvain, Salot, Raphaël, Brun, Nathalie, March, Katia, Alamarguy, David, Chrétien, Pascal, Schneegans, Olivier, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University, Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), University of Cyprus [Nicosia], Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Département Intégration Hétérogène sur Silicium (DIHS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia] (UCY), and Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

National audience

Published
2017

50. Understanding nanoscale structural distortions in Pb(Zr0.2Ti0.8)O3 by utilizing X‐ray nanodiffraction and clustering algorithm analysis.

Author

Christiansen-Salameh, Joyce, Yang, Morris, Rippy, Geoffrey, Li, Jianheng, Cai, Zhonghou, Holt, Martin, Agnus, Guillaume, Maroutian, Thomas, Lecoeur, Philippe, Matzen, Sylvia, and Kukreja, Roopali

Subjects
CLUSTER analysis (Statistics), HARD X-rays, K-means clustering, X-rays, LATTICE constants, DIFFRACTION patterns
Abstract

Hard X‐ray nanodiffraction provides a unique nondestructive technique to quantify local strain and structural inhomogeneities at nanometer length scales. However, sample mosaicity and phase separation can result in a complex diffraction pattern that can make it challenging to quantify nanoscale structural distortions. In this work, a k‐means clustering algorithm was utilized to identify local maxima of intensity by partitioning diffraction data in a three‐dimensional feature space of detector coordinates and intensity. This technique has been applied to X‐ray nanodiffraction measurements of a patterned ferroelectric PbZr0.2Ti0.8O3 sample. The analysis reveals the presence of two phases in the sample with different lattice parameters. A highly heterogeneous distribution of lattice parameters with a variation of 0.02 Å was also observed within one ferroelectric domain. This approach provides a nanoscale survey of subtle structural distortions as well as phase separation in ferroelectric domains in a patterned sample. [ABSTRACT FROM AUTHOR]

Published
2021
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