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26 results on '"Ahn, Ethan C."'

6. Phase Change Memory

Author

Jeyasingh, Rakesh, primary, Ahn, Ethan C., additional, Eryilmaz, S. Burc, additional, Fong, Scott, additional, and Wong, H.-S. Philip, additional

Published
2014
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19. Phonon Conduction in Silicon Nanobeam Labyrinths

Author

Massachusetts Institute of Technology. Department of Mechanical Engineering, Romano, Giuseppe, Kolpak, Alexie M., Park, Woosung, Ahn, Ethan C., Kodama, Takashi, Park, Joonsuk, Barako, Michael T., Sohn, Joon, Kim, Soo Jin, Cho, Jungwan, Marconnet, Amy M., Asheghi, Mehdi, Goodson, Kenneth E., Massachusetts Institute of Technology. Department of Mechanical Engineering, Romano, Giuseppe, Kolpak, Alexie M., Park, Woosung, Ahn, Ethan C., Kodama, Takashi, Park, Joonsuk, Barako, Michael T., Sohn, Joon, Kim, Soo Jin, Cho, Jungwan, Marconnet, Amy M., Asheghi, Mehdi, and Goodson, Kenneth E.

Abstract

Here we study single-crystalline silicon nanobeams having 470 nm width and 80 nm thickness cross section, where we produce tortuous thermal paths (i.e. labyrinths) by introducing slits to control the impact of the unobstructed "line-of-sight" (LOS) between the heat source and heat sink. The labyrinths range from straight nanobeams with a complete LOS along the entire length to nanobeams in which the LOS ranges from partially to entirely blocked by introducing slits, s = 95, 195, 245, 295 and 395 nm. The measured thermal conductivity of the samples decreases monotonically from ∼47 W m⁻¹ K⁻¹ for straight beam to ∼31 W m⁻¹ K⁻¹ for slit width of 395 nm. A model prediction through a combination of the Boltzmann transport equation and ab initio calculations shows an excellent agreement with the experimental data to within ∼8%. The model prediction for the most tortuous path (s = 395 nm) is reduced by ∼14% compared to a straight beam of equivalent cross section. This study suggests that LOS is an important metric for characterizing and interpreting phonon propagation in nanostructures., National Science Foundation (U.S.) (Grant 1336734), United States. Department of Energy. Office of Basic Energy Sciences (Award DE-SC0001299), United States. Department of Energy. Office of Basic Energy Sciences (Award DE-FG02-09ER46577)

Published
2018

20. CELIA

Author

Yan, Hao, primary, Cherian, Hebin R., additional, Ahn, Ethan C., additional, and Duan, Lide, additional

Published
2018
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24. Phonon Conduction in Silicon Nanobeam Labyrinths

Author

Park, Woosung, primary, Romano, Giuseppe, additional, Ahn, Ethan C., additional, Kodama, Takashi, additional, Park, Joonsuk, additional, Barako, Michael T., additional, Sohn, Joon, additional, Kim, Soo Jin, additional, Cho, Jungwan, additional, Marconnet, Amy M., additional, Asheghi, Mehdi, additional, Kolpak, Alexie M., additional, and Goodson, Kenneth E., additional

Published
2017
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26. Temperature dependent studies on centimeter-scale MoS 2 and vdW heterostructures.

Author

Sebastian AR, Kaium MG, Ko TJ, Shawkat MS, Jung Y, and Ahn EC

Abstract

Transition metal dichalcogenides is an emerging 2D semiconducting material group which has excellent physical properties in the ultimately scaled thickness dimension. Specifically, van der Waals heterostructures hold the great promise in further advancing both the fundamental scientific knowledge and practical technological applications of 2D materials. Although 2D materials have been extensively studied for various sensing applications, temperature sensing still remains relatively unexplored. In this work, we experimentally study the temperature-dependent Raman spectroscopy and electrical conductivity of molybdenum disulfide (MoS 2 ) and its heterostructures with platinum dichalcogenides (PtSe 2 and PtTe 2 ) to explore their potential to become the next-generation temperature sensor. It is found that the MoS 2 -PtX 2 heterostructure shows the great promise as the high-sensitivity temperature sensor., (© 2022 IOP Publishing Ltd.)

Published
2022
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