15 results on '"Ahn, Hyun Jun"'
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2. H2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs
3. Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current
4. 28 GHz GaAs pHEMT MMICs and RF front‐end module for 5G communication systems
5. Fluorine Effects Originating From the CVD-W Process on Charge-Trap Flash Memory Cells
6. Wide-Band 6～10 GHz InGaAs 0.15 μm pHEMT 27 dBm Power Amplifier
7. Selective Pore-Sealing of Highly Porous Ultralow-k dielectrics for ULSI Interconnects by Cyclic Initiated Chemical Vapor Deposition Process
8. High Efficiency and Low EMI Wireless Power Transmitter Module with on-chip V/I Monitoring Circuits
9. Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
10. Fecal incontinence knowledge, attitudes, and help‐seeking behaviors among community‐dwelling adults in Korea
11. Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2
12. Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film
13. First demonstration of a wrap-gated CNT-FET with vertically-suspended channels
14. Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High- $K$Dielectrics
15. The Work Function Behavior of Aluminum-Doped Titanium Carbide Grown by Atomic Layer Deposition
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