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155 results on '"Ahn, Sang Tae"'

12. Topical silicone gel for the prevention and treatment of hypertrophic scar

Author

Ahn, Sang Tae, Monafo, William W., and Mustoe, Thomas A.

Subjects
Cicatrices -- Care and treatment, Breast implants -- Usage, Silicones in medicine -- Usage, Surgical research -- Equipment and supplies, Health
Abstract

A severe burn injury, surgical incision or other deep skin trauma often results in hypertrophic scar formation. Little is known of the cause or biological basis for this uniquely human disorder of wound healing. Techniques recommended for prevention (careful surgical technique and early closure of chronic open wounds) are not always effective. These scars usually appear several months after surgery or injury. Once formed these scars are unpredictable and may be permanent. In children this condition is especially serious, causing functional, cosmetic and psychological damage. A report is presented of 48 patients who wore silicone gel bandage placed over a portion of their scars for a minimum of one month. The unbandaged and untreated portion of each scar was the used as the control. One group (29 patients) had fresh surgical scars that had not been left open at the time of surgery. These patients showed scar volume changes in 21 incisions and the bandaged scar area of the incisions gained less volume than the control scar. A second group (19 patients) had hypertrophic scars mostly due to burns. In these burn patients the elasticity of the scar was measured. Scar elasticity increased in the bandaged area compared with the controls; this improvement persisted for a minimum of six months. It is concluded that topical silicone gel is helpful in preventing as well as treating hypertrophic scars. (Consumer Summary produced by Reliance Medical Information, Inc.)

Published
1991

13. A New Method of Umbilical Transposition.

Author

Seo, Bommie Florence, primary, Kim, Seong Yeon, additional, Han, Hyun Ho, additional, Moon, Suk Ho, additional, Rhie, Jong Won, additional, Ahn, Sang Tae, additional, and Oh, Deuk Young, additional

Published
2017
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14. 56-51: A modified technique for device implantation using axillary subpectoral approach

Author

Choi, Young, primary, Youn, Kim Ju, additional, Kim, Sung-Hwan, additional, Seo, Bommie, additional, Ahn, Sang Tae, additional, Yi, Yeong Su, additional, Song, In Geol, additional, Kim, Yoo Ri, additional, Tae-Seok, Kim, additional, Ji-Hoon, Kim, additional, Sung-Won, Jang, additional, Man-Young, Lee, additional, Tai-Ho, Rho, additional, and Oh, Yong-Seog, additional

Published
2016
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20. BEOL process integrations with Cu/FSG wiring at 90 nm design-rule DDR DRAM and their effects on yield, refresh time, and wafer-level reliability

Author

Geun-Young Choi, Dong-Chul Koo, Sungwook Park, Soo-Hyun Kim, Ahn Sang Tae, Ja-Chun Ku, Seo-Min Kim, Hyunchul Sohn, Jae-Kwan Jung, Jinwoong Kim, Nohiung Kwak, Tae-Oh Jung, Jin-Ki Jung, Hyung-Soon Park, and Gyu-Hyun Kim

Subjects
Line resistance, Interconnection, Capacitor, Hardware_MEMORYSTRUCTURES, Materials science, Parasitic capacitance, law, Wafer level reliability, Copper interconnect, Electronic engineering, Double data rate, Dram, law.invention
Abstract

For the first time, this paper presents the results of successful integrations of Cu wiring into a production 512 Mb/90 nm design-rule stacked capacitor and recessed gate DDR (double data rate) DRAM technology, focusing on the effects of Cu integration on DRAM performance, yield, refresh time, and wafer-level reliability. 2 levels Cu interconnect (Ml single damascene and M2 dual damascene) and CVD low-k (FSG) materials have been implemented. Both the reduction in parasitic capacitance and line resistance were found to improve the operation speed of DRAM. No degradation was observed in view of normalized refresh time and yield with Cu wiring. The reliability issues with Cu integration to DRAM were systematically evaluated. In conclusion, this study demonstrates that the Cu wiring is fully compatible with the conventional DRAM and will be expected to meet the requirements of high-performance and high-speed advanced DRAM beyond sub-50 nm node.

Published
2007

27. Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM

Author

Hyun-Chul Sohn, Sang-Don Lee, Ahn Sang Tae, Ja-Chun Ku, Sung-Woong Chung, Hyo-Sik Park, Sungki Park, and Yong-Wook Song

Subjects
Gap filling, Materials science, business.industry, Junction leakage, Oxide, Chemical vapor deposition, chemistry.chemical_compound, chemistry, Shallow trench isolation, Trench, Electronic engineering, Optoelectronics, business, Dram, Leakage (electronics)
Abstract

We have investigated the characteristics of cell leakage and data retention time when using flowable oxide chemical vapor deposition (CVD) as a shallow trench isolation (STI) process of 1-Gbit DRAM. The trench gap filling capability was increased dramatically by combining high-density plasma (HDP) CVD with flowable oxide CVD. The reduced local stress by flowable oxide in narrow trenches leaded to decrease in junction leakage and gate induced drain leakage (GIDL) current and increase in data retention time of DRAM compared to HDP STI. Therefore, it is concluded that the combination of flowable oxide and HDP oxide is the most promising technology for STI gap filling process of sub-100 nm DRAM technology.

Published
2003

46. BEOL process integrations with Cu/FSG wiring at 90 nm design-rule DDR DRAM and their effects on yield, refresh time, and wafer-level reliability

Author

Kwak, Nohjung, primary, Ahn, Sang-Tae, additional, Park, Hyung-Soon, additional, Kim, Seo-Min, additional, Jung, Jin-Ki, additional, Kim, Gyu-Hyun, additional, Choi, Geun-Young, additional, Koo, Dong-Chul, additional, Jung, Tae-Oh, additional, Ku, Ja-Chun, additional, Jung, Jae-Kwan, additional, Kim, Jinwoong, additional, Park, Sungwook, additional, Sohn, Hyunchul, additional, and Kim, Soo-Hyun, additional

Published
2007
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