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We present experimental results of characterization of Silicon photomultipliers (SiPM) in a temperature range from 90~mK to 40~K. Two SiPMs, one from ONSEMI and one from Hamamatsu Photonics were tested. Operating voltage ranges, dark count rates, afterpulsing effects and photon detection efficiencies (PDE) were determined with illumination by 275 and 470~nm light fed into the cryostat via an optical fiber. A cryogenic shutter provided a true dark condition, where thermal radiation from room temperature is shielded and the thermal excitations in the chips are frozen. A second tunneling breakdown was observed at this condition, which substantially limits the operating voltage range for the temperatures 20-30 K. Below $\sim$5 K, both SiPMs recover to an operating over-voltage range of 3-5 V. We found the chips function through the entire tested temperature range, and are capable of withstanding thermal cycling with no major performance degradation., Comment: 10 pages, 8 figures

We consider a possibility of the magnetostatic type spin waves driven by a long-range magnetic dipole interactions, to account for the peaks in the ESR spectra observed in our previous work. The Walker equation for magnetostatic modes is solved for a cylinder of atomic hydrogen, first in a uniform magnetic field and second in a linearly decreasing magnetic field. The frequency behavior of the solved modes with length of the cylinder and density of the gas is compared to experimental data. We conclude that magnetostatic modes are unlikely to account for the observed modulations of ESR spectra., Comment: 15 pages, 15 figures

We report on an electron spin resonance study of atomic hydrogen stabilized in a solid Ne matrices carried out at a high field of 4.6 T and temperatures below 1 K. The films of Ne, slowly deposited on the substrate at the temperature $\sim$1 K, exhibited a high degree of porosity. We found that H atoms may be trapped in two different substitutional positions in the Ne lattice as well as inside clusters of pure molecular H$_{2}$ in the pores of the Ne film. The latter type of atoms was very unstable against recombination at temperatures 0.3-0.6$\,$K. Based on the observed nearly instant decays after rapid small increase of temperature, we evaluate the lower limit of the recombination rate constant $k_{r}\geq5\cdot10^{-20}\,$cm$^{3}$s$^{-1}$ at 0.6$\,$K, five orders of magnitude larger than that previously found in the thin films of pure H$_{2}$ at the same temperature. Such behavior assumes a very high mobility of atoms and may indicate a solid-to-liquid transition for H$_{2}$ clusters of certain sizes, similar to that observed in experiments with H$_{2}$ clusters inside helium droplets (Phys. Rev. Lett 101, 205301 (2008)). We found that the efficiency of dissociation of H$_{2}$ in neon films is enhanced by 2 orders of magnitude compared to that in pure H$_{2}$, which is instigated by a strong emission of secondary electrons., Comment: 13 pages, 12 Figures