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101 results on '"Aissat, Abdelkader"'

1. Improvement of Silicon Nanowire-Based Photovoltaic Solar Cell with the Integration of CIGS Quantum Wells

Author

Safi, Meriem, Aissat, Abdelkader, Guesmi, Houcine, Vilcot, Jean Pierre, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Oneto, Luca, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zamboni, Walter, Series Editor, Zhang, Junjie James, Series Editor, Bekkay, Hajji, editor, Mellit, Adel, editor, Gagliano, Antonio, editor, Rabhi, Abdelhamid, editor, and Amine Koulali, Mohammed, editor

Published
2023
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4. Optimization of the Temperature Effects on Structure InAs/GaAs QDSC

Author

Aissat, Abdelkader, Harchouch, Nabila, Vilcot, Jean Pierre, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zhang, Junjie James, Series Editor, Hajji, Bekkay, editor, Tina, Giuseppe Marco, editor, Ghoumid, Kamal, editor, Rabhi, Abdelhamid, editor, and Mellit, Adel, editor

Published
2019
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8. Investigation of the Relationship between Shaded Cell Temperature and the Operating Point of PV Systems.

Author

Smara, Zoubeyr and Aissat, Abdelkader

Subjects
THERMAL stresses, OPEN-circuit voltage, SOLAR cells, PHOTOVOLTAIC power systems, SHORT circuits, MAXIMUM power point trackers, BUILDING-integrated photovoltaic systems
Abstract

The building integrated photovoltaic applications (BIPV) are mostly affected by partial shading, which results in a significant decrease in energy efficiency and leads to the apparition of multiple power peaks on the I-V characteristic curve of photovoltaic generators. In mitigating this problem, sophisticated maximum power point tracking techniques (MPPT) are used to track the global peak among the other locals. These techniques do not take into account the overheating of the shaded cells given that, under some critical situations, shaded cell performances may degrade, thus affecting the lifespan of the photovoltaic modules. In this regard, the present work aims to investigate in which peak on the I-V characteristic curve the PV module should operate appropriately with less overheating risk. For that, the shaded cells' temperatures and currents at different operating points were monitored. The results show that the worst-case scenario occurs for small shadow ratios (in the studied case, the shadow ratio 'sr' = 25%) where the temperature of the shaded cell reached approximately three times (300%) the temperature of non-shaded cells. This temperature decreases as the operating point is moved from the short circuit current towards the open-circuit voltage; as a result, the PV module works safely with minimum thermal stress for the maximum power peak near the open-circuit voltage. [ABSTRACT FROM AUTHOR]

Published
2024
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14. Improved mobility of the InxGa1-xAs1-y-zNySbz/GaAs structure.

Author

Aissat, Abdelkader, Boubakeur, Manel, Bellil, Wafa, and Vilcot, Jean Pierre

Subjects
*ELECTRON mobility, *HOLE mobility, *CARRIER density, *SEMICONDUCTOR lasers, *PHYSICAL mobility, *CHARGE carrier mobility
Abstract

The principal objective of this work based on modeling and simulation is to study the transport properties of Ga1-xInxAs1-y-zNySbz /GaAs structure. This investigation also contains the temperature effect on the electrons and holes mobility as a function of carrier concentrations. The obtained results were validated by experimental data. We started this work by simulating the ternary and quaternary electrons and holes mobilities. In this study, we find that an alloy structure with In = 38%, N = 2% and Sb = 1% has the best mobilities, for electrons μn = 104cm2/V.s and for holes μp = 400 cm2 /V. s at 300K. This work gives the ability to manufacture fast materials in order to realize high speed laser diodes as well as optoelectronic components. [ABSTRACT FROM AUTHOR]

Published
2023
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19. Efficient scene analysis by a deep learning-long short-term memory approach based on polarimetric measurements.

Author

Boudaoud, Radhwane, Kedadra, Abdelkrim, Zerrouki, Nabil, and Aissat, Abdelkader

Subjects
SHORT-term memory, OBJECT recognition (Computer vision), DEEP learning, MUELLER calculus, MATRIX decomposition, MACHINE learning
Abstract

Polarimetric imaging has been considered one of the crucial research fields in tactical object recognition in the scene. The present paper addresses the detection and classification of different objects in the scene based on data of polarization cameras. Initially, a pre-treatment phase is conducted where the angle and the degree of polarization of each region of the scene are obtained by polarimetric images. After that stage, stokes-based parameters are extracted from the polarimetric images. In addition, Mueller matrix decomposition is also applied to extract attributes. In the classification step, we applied several machine-learning algorithms. These classification methods are mainly chosen due to their (i) high generalization performance with nonlinear data and (ii) powerfulness in big data separation. Finally, we applied these strategies to the publicly available PolaBot database from Bourgogne Franche-Comte University. The obtained results indicated that the proposed strategy accurately detected and differentiated between different classes in the scene. [ABSTRACT FROM AUTHOR]

Published
2022
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20. Modeling and simulation of GaAsPN/GaP quantum dot structure for solar cell in intermediate band solar cell applications.

Author

Aissat, Abdelkader, Chenini, Lynda, Nacer, Said, and Vilcot, Jean Perre

Subjects
*SOLAR cells, *SOLAR cell design, *QUANTUM dots, *PHOTOVOLTAIC power systems, *CHROMIUM-cobalt-nickel-molybdenum alloys, *QUANTUM efficiency, *ABSORPTION coefficients
Abstract

Summary: This effort is founded on the modeling and simulation of the GaAsPN/GaP quantum dot (QD) solar cell. This quaternary alloy is one of the III‐V semiconductors, which gained importance in the recent years for optoelectronic applications. This importance comes from the fact that the quaternary GaAsPN can be a well‐grown lattice matched to GaP and Si substrates and to the bandgap that can be decreased drastically with the incorporation of nitrogen and arsenic into GaP, improving consequently the absorption and the wavelengths near the red part. These qualities make GaAsPN a good candidate for the growth on the Si substrate and low‐cost solar cell fabrication. The optical properties of GaAsPN/GaP QDs, such as strain, critical thickness, bandgap energy, the external quantum efficiency, and absorption coefficient, have been reported. The heterostructures consist of GaAs0.18P0.814N0.006 QDs separated by GaP barrier layers. The width and thickness of QDs are about 5 and 5 nm, respectively. Our results have been shown that 20 GaAs0.18P0.814N0.006/GaP QD layers produce a short‐circuit current of about 3.55 mA/cm2 and an efficiency of about 7.5%. In addition, we will be able to extend the absorption edge of a GaP solar cell from 0.48 μm to 0.5 μm for the same QD number layers inserted. The temperature effect on efficiency is considered. [ABSTRACT FROM AUTHOR]

Published
2022
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21. InGaAsN Carriers Impulse Response Investigation

Author

Amraoui Rachid, Dedier Decoster, and Aissat Abdelkader

Subjects
Materials science, chemistry, Strain (chemistry), Depletion region, Band gap, chemistry.chemical_element, Nitrogen, Molecular physics, Indium, Quantum well, Impulse response, Photonic crystal
Abstract

This work aims to find a relation between both indium and nitrogen concentrations in InGaAsN and the impulse response on one hand and the depletion region thickness with the impulse response on the other hand. In the present we adopt a new structure with strained quantum well based on double transparent regions p-side and n-side. The impulse response is calculated after fixing indium and nitrogen fractions (x=31.5 %, y=0.2 %) and (x=6.5%, y=2.05 %) with strain E=0.5% and −0.132% respectively having definite bandgap energy parameter

Published
2019

22. The Effect of Ultrasound Pre-treatment on the Yield, Chemical Composition and Antioxidant Activity of Essential Oil from Wild Lavandula stoechas L

Author

Benabdelkader Tarek, Aissat Abdelkader, Chekoual Lilia, and Ait-Kaci Aourahoun Karima

Subjects
Antioxidant, biology, 010405 organic chemistry, DPPH, medicine.medical_treatment, 010401 analytical chemistry, Organic Chemistry, Ascorbic acid, biology.organism_classification, 01 natural sciences, Biochemistry, Fenchone, 0104 chemical sciences, Analytical Chemistry, law.invention, chemistry.chemical_compound, Camphor, chemistry, law, medicine, Food science, Gas chromatography–mass spectrometry, Lavandula stoechas, Essential oil
Abstract

In this present work, the aim is to evaluate the effect of different times of ultrasound pretreatment prior to hydrodistillation (US-HD) on the yield, chemical composition and antioxidant activity of essential oils of two wild Lavandula stoechas L. from the North of Algeria. The results indicate that ultrasound treatment engenders a rapid release of essential oils (1.59 %) recovery after only 10 min of sample of Adekar treated by ultrasound and followed by 90 min of hydrodistillation (HD) versus 180 min of hydrodistillation of untreated sample (1.17 %). However, the yields of Keddara sample treated by 45 min versus untreated samples were 0.87 % versus 0.62 %. 94.30 % and 88.26 % of total compounds were identified using chromatographymass spectrometry (GC-MS) in samples of Adekar and Keddara treated by ultrasound versus untreated samples (92.64 % and 88.75 % respectively). A difference in chemical composition between the essential oils of the two harvesting sites and between the extracts obtained by HD and by US-HD was found. The percentage of the most of the major compounds (fenchone, camphor, 1,8-cineole, bornyl-acetate, myrtenyl-acetate and viridiflorol) and other compounds identified is higher in treated L. stoechas L. than untreated L. stoechas L. The study of antioxidant power was carried out by 2, 2 diphenyl-1-picrylhydrazyl (DPPH) method. The results showed that antioxidant power of treated samples is superior to antioxidant power of untreated samples. Antioxidant activity of both samples (treated and untreated) is less effective compared with antioxidant activity of ascorbic acid.

Published
2018

28. Theoretical study of Intersubband Absorption Coefficient of Conduction Band in GaAsP/GaP Quantum Well Structures

Author

Chenini Lynda, Vilcot Jean-Pierre, Aissat Abdelkader, Université de Saâd Dahlab [Blida] (USDB ), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Université Saâd Dahlab Blida 1 (UB1)

Subjects
Work (thermodynamics), Materials science, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Condensed Matter::Materials Science, [SPI]Engineering Sciences [physics], 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Absorption (electromagnetic radiation), Quantum well, Arsenic, ComputingMilieux_MISCELLANEOUS, Photonic crystal, Condensed matter physics, Condensed Matter::Other, business.industry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Wavelength, chemistry, Attenuation coefficient, Photonics, 0210 nano-technology, business
Abstract

In this work, a numerical simulation is used to explore and determine the arsenic content profile and effects of the well thickness on the intersubband coefficient of the conduction band in the GaAs x P 1-x /GaP quantum well structure, x is the concentration of arsenic. This theoretical study has shown that the intersubband conduction band and the corresponding wavelength emission are mainly affected by these both factors. Hence, one should adjust the desired energy and achieve a large absorption coefficient by changes the quantum well width and the arsenic composition.

Published
2019

29. Magnetic field effect on nonlocal resonance frequencies of structure-based filter with periodic square holes network

Author

Kerid, Rachid, Bourouina, Hicham, Yahiaoui, Reda, Bounekhla, Mhamed, Aissat, Abdelkader, Université de Saâd Dahlab [Blida] (USDB ), Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; In this paper, we investigate the magnetic field, thermal loads and small scale effects on the dynamics vibration of a nanobeam structure composed of a rectangular configuration perforated with periodic square holes network and subjected to axial magnetic field based on Euler–Bernoulli beam model (EBM) and Timoshenko beam model (TBM). The developed resonance frequencies expressions are derived by modifying the standard equations of dynamics beam vibration. The small scale effect is adopted via the Eringen's nonlocal theory while the coupled governing equations are obtained and solved using analytical solution method in order to determine the resonance frequency of perforated nanobeam. It is found that the resonance frequency change, the magnetic field intensity, the thermal loads and small scale effects are in dependence with geometrical parameters such as size and number of holes. Therefore, these results are discussed for the investigation of the structure dynamic deformation and compared with literature results where new remarks are deduced and presented with detail for a proper design of M/NEMS structures.

Published
2019

30. Optimization of GaAs 1-x Px/Si Tandem Dual-Junction Solar Cells

Author

Azzououm, Ahmed Bahi, Aissat, Abdelkader, Benyettou, Fethi, Vilcot, Jean-Pierre, Université de Saâd Dahlab [Blida] (USDB ), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Optoélectronique - IEMN (OPTO - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Université Saâd Dahlab Blida 1 (UB1)

Subjects
[SPI]Engineering Sciences [physics], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2018

39. Optimization of Optical Gain in Inx Ga1-xSb/GaSb Unstrained Quantum Well Structures

Author

Sai̇d Dehimi, Aissat Abdelkader, Djamel Haddad, and Lakhdar Dehimi

Subjects
detection, In1-x Gax Sb, Condensed Matter::Other, Infrared, business.industry, Chemistry, Laser, Astrophysics::Cosmology and Extragalactic Astrophysics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, law.invention, Charge-carrier density, Solar cell efficiency, Energy(all), law, Optoelectronics, Quantum well, business, Astrophysics::Galaxy Astrophysics, optical gain
Abstract

In this paper we study the effects of In concentration, temperature, quantum well width and carrier density on optical gain for GaSb/InxGa1-xSb/GaSb untrained quantum well structures. This system was chosen as it is useful in infrared emission, finally, we introduce the optimum structure of quantum well to obtain the maximum optical gain, at room temperature and infrared emission particularly 2.3 (μm), for the use this structure in application of spectroscopic analysis of the gases specially CH4. This structure can be used for light absorption to increase the solar cell efficiency a based on a quantum well and multi-junction.

Published
2015

44. Studies of the Effect of a Photons Converter (LDS) on the Characteristic Parameters of the Solar Cells

Author

Ayad, Mohammed, Fathi, Mohamed, MAHFOUD, Abderrazak, and AİSSAT, Abdelkader

Subjects
Keywords- Spectral Converter,Solar cells,PMMA,Solar spectrum,Encapsulation
Abstract

The aim of this paper is the improvement of the quantum efficiency of single crystalline silicon solar cells by applying the down-shift conversion of the solar spectrum. We have used this phenomenon of solar spectra shift in order to transfer incident photons of UV-Blue region to lower energy photons in visible spectra to be adapted to spectral sensitivity of the solar cells. Consequently, the reflection losses are reduced. For this object, we replace the PV encapsulation glass by polymethyl methacrylate (PMMA) doped with optically actives components. The effects of some optical transitions on the incident solar spectrum are modeled and simulated by taking into account the spectra of absorption and emission of each type of dopants used. We have shown an increase of about 9% in short circuit photo-current density (Jsc) and then in the photovoltaic conversion efficiency.

Published
2016

48. Frequency response modeling and optimization of a PIN photodiode based on GaN/InGaN adapted to photodetection at a wavelength of 633 nm

Author

El Besseghi, M., Aissat, Abdelkader, Alshehri, Bandar, Dogheche, Karim, Dogheche, El Hadj, Decoster, Didier, Laboratoire de Traitement de Signal et Imagerie [Blida] (LATSI), Université Saâd Dahlab Blida 1 (UB1), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Semiconductors, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Optoelectronic materials, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; In this paper, the frequency response calculation and optimization of PIN photodiodes based on GaN/InGaN, suitable for photodetection at the wavelength of 633 nm, are presented. The calculations of the impulse as well as the frequency response are performed using the impulse method. The frequency response optimization is a result of optimizing the transport of photo-generated carriers in the absorbent layer of the photodiode, using a mixed depletion region rather than a single absorbing depletion region. Cut-off frequencies of about 82 GHz and 48 GHz have been obtained in the case of transparent layer thickness of 500 nm and 1000 nm, respectively. The aforementioned results represent a very good improvement.

Published
2015

49. Improved efficiency by the effect of strain on the structure of a solar cell based on GaInP/GaAs

Author

Aissat, Abdelkader, Bestam, Rachid, Vilcot, Jean-Pierre, Laboratoire de Traitement de Signal et Imagerie [Blida] (LATSI), Université de Saâd Dahlab [Blida] (USDB ), LASICOM Laboratory, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Université Saâd Dahlab Blida 1 (UB1)

Subjects
[SPI]Engineering Sciences [physics], III-V semiconductors, optoelectronics, solar cells
Abstract

This work is aimed at the study of GaInP-based photovoltaic cell. The effects of In content, lattice parameter mismatch and thickness of the SiO2 insulating layer on the characteristics and efficiency of the GaInP structure were investigated. We noticed that for higher In concentrations, the band gap energy decreases significantly. The structure possesses two different regions that are dopant concentration-dependent (x

Published
2014

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