25 results on '"Akage, Y."'
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2. 25 Gbit/s 1.3 [micro sign]m InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system
3. Low Driving-Voltage 40-Gbit/s Electroabsorption Modulator Integrated DFB Laser Module with Low Chirp Characteristics
4. High-performance InP-based optical modulators
5. Microwave reflection control technique for electroabsorption modulators
6. Return-loss-suppressed electroabsorption modulator with novel transmission line electrodes on conductive substrate
7. High-Speed Electroabsorption Modulators Buried With Ruthenium-Doped SI-InP
8. 40 Gbit∕s electroabsorption modulators with 1.1 V driving voltage
9. Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s.
10. High-speed electroabsorption modulators using ruthenium-doped SI-InP: impact of interdiffusion-free burying technology on E/O modulation characteristics.
11. Wide bandwidth of over 50 GHz travelling-wave electrode electroabsorption modulator integrated DFB lasers
12. High-Performance Electroabsorption Modulators Utilizing Microwave Reflection Control Technique.
13. Low Chirp Operation of 40 Gbit/s Electroabsorption Modulator Integrated DFB Laser Module With Low Driving Voltage.
14. 25 Gbit/s 1.3 µm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system.
15. 40 Gbit/s electroabsorption modulators with 1.1 V driving voltage.
16. Simple method for determining the gain saturation coefficient of a distributed feedback semiconductor laser
17. Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/s
18. Novel measurement method of the gain compression factor in semiconductor lasers under the large sign
19. High-speed electroabsorption modulators using ruthenium-doped SI-InP: impact of interdiffusion-free burying technology on E/O modulation characteristics
20. Ultrafast electroabsorption modulators with traveling-wave electrodes
21. First 40-km SMF transmission for 100-Gbit/s Ethernet system based on 25-Gbit/s 1.3-µm electroabsorption modulator integrated with a DFB laser module.
22. Ultrafast electroabsorption modulators with traveling-wave electrodes.
23. Polarization-independent InGaAlAs/InAlAs electroabsorption modulators with an optimized strained-MQW.
24. Novel measurement method of the gain compression factor in semiconductor lasers under the large sign.
25. Intensity and phase correlation method for determining the linewidth enhancement factor of semiconductor lasers
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