153 results on '"Akasaka, Tetsuya"'
Search Results
2. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
3. Low-resistance graded Al xGa 1−xN buffer layers for vertical conducting devices on n-SiC substrates
4. BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphire
5. Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on [formula omitted]-SiC substrates
6. Liquid phase epitaxy of GaN films on sapphire substrates under an atmospheric pressure nitrogen ambience
7. Current-confining structure of InGaN hexagonal microfacet lasers by selective incorporation of Mg during selective-area MOVPE
8. Landau level quantization with gate tuning in an AlN/GaN single heterostructure
9. N-face $(000\bar{1})$ GaN/InN/GaN double heterostructures emitting near-infrared photoluminescence grown by metalorganic vapor phase epitaxy
10. Surface morphology control of nonpolar m -plane AlN homoepitaxial layers by flow-rate modulation epitaxy (Phys. Status Solidi B 2/2017)
11. Surface morphology control of nonpolarm-plane AlN homoepitaxial layers by flow-rate modulation epitaxy
12. Flow-rate modulation epitaxy of nonpolar m-plane AlN homoepitaxial layers grown on AlN bulk substrates
13. N-face GaN$(000\bar{1})$ films with hillock-free smooth surfaces grown by group-III-source flow-rate modulation epitaxy
14. Erratum: “Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN” [Appl. Phys. Lett. 105, 193509 (2014)]
15. Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN
16. N-face GaN($000\bar{1}$) films grown by group-III-source flow-rate modulation epitaxy
17. Nucleus and spiral growth mechanisms of nitride semiconductors in metalorganic vapor phase epitaxy
18. GaN on h-BN technology for release and transfer of nitride devices
19. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
20. Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganic Vapor Phase Epitaxy
21. Nucleus and Spiral Growth of N-face GaN(0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
22. A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
23. Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step‐Free GaN Surface
24. Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy
25. Optical band gap of h‐BN epitaxial film grown on c ‐plane sapphire substrate
26. Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy
27. Epitaxial Growth of Hexagonal Boron Nitride and the Ultraviolet Luminescence Properties
28. Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
29. Anisotropic in-plane strains in nonpolar AlN and AlGaN (112¯0) films grown on SiC (112¯0) substrates
30. Nonpolar AlBN (112¯0) and (11¯00) films grown on SiC substrates
31. Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy
32. Growth of nonpolar AlN (112¯) and (11¯00) films on SiC substrates by flow-rate modulation epitaxy
33. Low-resistance graded AlxGa1−xN buffer layers for vertical conducting devices on n-SiC substrates
34. GaN-Based Surface-Emitting Lasers Using Micro-Facets Fabricated by Selective-Area Epitaxy
35. Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on -SiC substrates
36. InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers
37. p-InGaN/n-GaN Vertical Conducting Diodes onn+-SiC Substrate for High Power Electronic Device Applications
38. High critical electric field of AlxGa1−xN p-i-n vertical conducting diodes on n-SiC substrates
39. Flow-rate modulation epitaxy of wurtzite AlBN
40. GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
41. Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
42. Current-voltage characteristics of p‐InGaN∕n‐GaN vertical conducting diodes on n+‐SiC substrates
43. BGaN Micro-Islands as Novel Buffers for GaN Hetero-Epitaxy
44. Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
45. Blue-purplish InGaN quantum wells with shallow depth of exciton localization
46. InGaN quantum wells with small potential fluctuation
47. Flow-rate modulation epitaxy of wurtzite AlBN
48. High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers
49. Observation of InGaN cavity polaritons at room temperature
50. Low-dislocation AlGaN thin films grown using Al1-xSixN nano-disks (x= 0.07-0.17)
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.