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2 results on '"Al-implantation"'

1. Al-implantation induced damage in 4H-SiC.

Author

Kumar, P., Martins, M.I.M., Bathen, M.E., Prokscha, T., and Grossner, U.

Subjects
*DEEP level transient spectroscopy, *MUON spin rotation, *POWER semiconductors, *ION implantation, *POSITRON annihilation, *SILICON alloys, *POWER electronics, *MUONS
Abstract

Ion implantation of 4H-SiC is one of the crucial steps in the fabrication of power devices. This process results in the generation of electrically active defects both in the implanted region and beyond. In this work, we explore the defects created during Al-ion implantation and post implantation annealing using low-energy muon spin rotation (LE- μ SR) spectroscopy and deep level transient spectroscopy (DLTS). Two sets of samples, exposed to low fluence (LF) and high fluence (HF) of Al, are examined with and without annealing. The results reveal that defects induced by Al implantation extend deep into the semiconductor, far beyond the implanted region, thus influencing the electrical properties of SiC material. The LF samples exhibit a LE- μ SR signature that points to a carbon vacancy (V C) concentration in the range of 1 × 1 0 15 to 1 × 1 0 19 cm − 3 . Further, DLTS measurements reveal defect levels associated with silicon vacancies (V Si) and carbon vacancies (V C) several µm away from the intended implantation region, indicating that Al implantation and subsequent high-temperature annealing impacts the SiC lattice in a substantial volume. The present study provides valuable insights into the near-surface and bulk effects of Al implantation in 4H-SiC, which is essential for optimizing semiconductor device performance in power electronics applications. [ABSTRACT FROM AUTHOR]

Published
2024
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2. Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)

Author

Vivona M., Giannazzo F., Bellocchi G., Panasci S. E., Agnello S., Badala P., Bassi A., Bongiorno C., Di Franco S., Rascuna S., Roccaforte F., Vivona M., Giannazzo F., Bellocchi G., Panasci S.E., Agnello S., Badala P., Bassi A., Bongiorno C., Di Franco S., Rascuna S., and Roccaforte F.

Subjects
silicon carbide (4H-SiC), dopant activation, Settore FIS/01 - Fisica Sperimentale, laser annealing, Al-implantation
Abstract

This paper reports on the effects of excimer laser irradiation on an aluminum (Al)-doped silicon carbide (4H-SiC) layer. Specifically, high-concentration (1 × 1020at/cm3) Al-implanted 4H-SiC samples were exposed to a few pulses of 308 nm laser radiation (pulse duration of 160 ns), with fluence varying from 1.0 to 2.8 J/cm2. As a starting point, the laser-induced modifications of the morphological, microstructural, and nanoelectrical properties of the exposed 4H-SiC surface were monitored by combining different techniques. From these investigations, an evolution of the surface morphology was observed that can be ascribed to a conversion during irradiation of the uppermost part of the 4H-SiC implanted layer into a polycrystalline region of 3C-SiC and 6H-SiC grains, surmounted in the order by a crystalline-Si layer and an amorphous C-rich region. Then, the electrical characteristics of the implanted layer were evaluated by means of test structures appropriately fabricated on the samples. The high value of sheet-resistance of the irradiated layer (in the order of 104kω/sq) suggested a poor activation of the p-type dopant and/or a low mobility of the carriers in the polycrystalline 3C-SiC/6H-SiC layer. The outcomes of this study can be useful for a fundamental understanding of laser annealing treatments of 4H-SiC implanted layers, toward a possible use in 4H-SiC technology of this process.

Published
2022

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