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We report the coherent generation and detection of terahertz (THz) pulses featuring a spectral bandwidth in the range of 0.1-9 THz achieved via the use of a high repetition rate (250 kHz), low pulse energy (6.2 µJ) laser system. More specifically, we test and evaluate a solid-state biased coherent detection device in combination with a spintronic emitter. We demonstrate the use of this combination of techniques to measure the ultra-broadband THz frequency optical properties of bulk crystalline materials with time-domain spectroscopy.

Plasmonic polymeric nanoassemblies offer valuable opportunities in photoconversion applications. Localized surface plasmon mechanisms behind such nanoassemblies govern their functionalities under light illumination. However, an in-depth investigation at the single nanoparticle (NP) level is still challenging, especially when the buried interface is involved, due to the availability of suitable techniques. Here, we synthesized an anisotropic heterodimer composed of a self-assembled polymer vesicle (THPG) capped with a single gold NP, enabling an 8-fold enhancement in hydrogen generation compared to the nonplasmonic THPG vesicle. We explored the anisotropic heterodimer at the single particle level by employing advanced transmission electron microscopes, including one equipped with a femtosecond pulsed laser, which allows us to visualize the polarization- and frequency-dependent distribution of the enhanced electric near fields at the vicinity of Au cap and Au–polymer interface. These elaborated fundamental findings may guide designing new hybrid nanostructures tailored for plasmon-related applications.

We demonstrate a new waveguide geometry, namely a four-wire waveguide, which acts as a terahertz polarization-division multiplexer and a novel platform to realize versatile signal-processing functionalities into independent channels over a broadband terahertz frequency range.

Waveguides play a pivotal role in the full deployment of terahertz communication systems. Besides signal transporting, innovative terahertz waveguides are required to provide versatile signal-processing functionalities. Despite fundamental components, such as Bragg gratings, have been recently realized, they typically rely on complex hybridization, in turn making it extremely challenging to go beyond the most elementary functions. Here, we propose a universal approach, in which multiscale-structured Bragg gratings can be directly etched on metal-wires. Such an approach, in combination with diverse waveguide designs, allows for the realization of a unique platform with remarkable structural simplicity, yet featuring unprecedented signal-processing capabilities. As an example, we introduce a four-wire waveguide geometry, amenable to support the low-loss and low-dispersion propagation of polarization-division multiplexed terahertz signals. Furthermore, by engraving on the wires judiciously designed Bragg gratings based on multiscale structures, it is possible to independently manipulate two polarization-division multiplexed terahertz signals. This platform opens up new exciting perspectives for exploiting the polarization degree of freedom and ultimately boosting the capacity and spectral efficiency of future terahertz networks.

We report on the time-domain integration of terahertz pulses obtained via the tight confinement of the radiation in a tapered two-wire waveguide. Both simulation and experimental results prove the time integration capability of this structure.

We show the time-domain integration of terahertz pulses achieved in a sub-wavelength, tapered two-wire waveguide. Both simulation and experimental results prove the time integration functionality of this waveguide topology.

We present an innovative implementation of the solid-state-biased coherent detection (SSBCD) technique, which we have recently introduced for the reconstruction of both amplitude and phase of ultra-broadband terahertz pulses. In our previous works, the SSBCD method has been operated via a heterodyne scheme, which involves demanding square-wave voltage amplifiers, phase-locked to the THz pulse train, as well as an electronic circuit for the demodulation of the readout signal. Here, we demonstrate that the SSBCD technique can be operated via a very simple homodyne scheme, exploiting plain static bias voltages. We show that the homodyne SSBCD signal turns into a bipolar transient when the static field overcomes the THz field strength, without the requirement of an additional demodulating circuit. Moreover, we introduce a differential configuration, which extends the applicability of the homodyne scheme to higher THz field strengths, also leading a two-fold improvement of the dynamic range compared to the heterodyne counterpart. Finally, we demonstrate that, by reversing the sign of the static voltage, it is possible to directly retrieve the absolute THz pulse polarity. The homodyne configuration makes the SSBCD technique of much easier access, leading to a vast range of field-resolved applications.

We present the solid-state-biased coherent detection technique for ultra-broadband THz pulses operated via a homodyne configuration. This makes our detection method of easy implementation, suitable for cost-effective and portable THz systems.

In this work, the time-domain integration of broadband terahertz (THz) pulses via a tapered two-wire waveguide (TTWWG) is reported. Such a guiding structure consists of two metallic wires separated by a variable air gap that shrinks down to a subwavelength size as the movement takes from the waveguide input to its output. It is shown that while an input THz pulse propagates toward the subwavelength output gap, it is reshaped into its first-order time integral waveform. In order to prove the TTWWG time integration functionality, the THz pulse is detected directly within the output gap of the waveguide, so as to prevent the outcoupling diffraction from altering the shape of the time-integrated THz transient. Since the time-domain integration is due to the tight geometrical confinement of the THz radiation in a subwavelength gap volume, the TTWWG operational spectral range can easily be tuned by judiciously changing both the output gap size and the tapering angle. The results lead to the physical realization of a broadband, analog THz time integrator device, which is envisioned to serve as a key building block for the implementation of complex and ultrahigh-speed analog signal processing operations in THz communication systems.

The spectral fingerprint of ibuprofen within the THz frequency window has been retrieved through an ultra-broadband THz Time Domain Spectrometry set-up. The latter implements the Solid State Biased Coherent Detection scheme, based on a compact CMOS-compatible integrated device. Such a technique shows unprecedented advantages in term of bandwidth (greater than 10 THz) over other solid state methods like electro-optic sampling.

We demonstrate the first fully solid-state technique for the coherent detection of ultra-broadband THz pulses (0.1-10 THz), relying on the electric-field-induced second-harmonic generation attained in integrated CMOS-compatible devices.

We report on the design, development and operation of a portable, low cost, battery-operated, multi-channel, functional Near Infrared Spectroscopy embedded system, hosting up to 64 optical sources and 128 Silicon PhotoMultiplier optical detectors. The system is realized as a scalable architecture, whose elementary leaf consists of a probe board provided with 16 SiPMs, 4 couples of bi-color LED, and a temperature sensor, built on a flexible stand. The hardware structure is very versatile because it is possible to handle both the switching time of the LED and the acquisition of the photodetectors, via an ARM based microcontroller.

We present a novel class of CMOS-compatible devices aimed to perform the solid-state-biased coherent detection of ultrashort terahertz pulses, i.e., featuring a gap-free bandwidth at least two decades-wide. Such a structure relies on a 1-µm-wide slit aperture located between two parallel aluminum pads, embedded in a 1-µm-thick layer of silicon nitride, and deposited on a quartz substrate. We show that this device can detect ultra-broadband terahertz pulses by employing unprecedented low optical probe energies of only a few tens of nanojoules. This is due to the more than one order of magnitude higher nonlinear coefficient of silicon nitride with respect to silica, the nonlinear material employed in the previous generations. In addition, due to the reduced distance between the aluminum pads, very high static electric fields can be generated within the slit by applying extremely low external bias voltages (in the order of few tens of volts), which strongly enhance the dynamic range of the detected THz waveforms. These results pave the way to the integration of solid-state ultra-broadband detection in compact and miniaturized terahertz systems fed by high repetition-rate laser oscillators and low-noise, low-voltage generators.

In this work, we have designed and implemented a microcontroller-based embedded system for blood pressure monitoring through a PhotoPlethysmoGraphic (PPG) technique. In our system, it is possible to perform PPG measurements via reflectance mode. Hardware novelty of our system consists in the adoption of Silicon PhotoMultiplier detectors. The signal received from the photodetector is used to calculate the instantaneous heart rate and therefore the heart rate variability. The obtained results show that, by using our system, it is possible to easily extract both the PPG and the breath signal. These signals can be used to monitor the patients during the convalescence both in hospital and at home.

We present an analytical model carefully describing the time-frequency behavior of all the stages composing our whole Terahertz Time Domain Spectroscopy laser based system, from the THz pulses generation via Optical Rectification, to their detection through Electro-Optic Sampling technique, by way of diffraction, collecting and focusing effects. In order to prove the effectiveness of our work, we report on the comparison among the experimental waveforms and the simulation results.

A design and implementation of a portable functional Near InfraRed Spectroscopy embedded system prototype is described. In this theoretical and experimental work, we present an embedded system hosting 64 LED sources and 128 Silicon PhotoMultiplier detectors (SiPM). The elementary part of the structure is a flexible probe “leaf” consisting of 16 SiPMs, 4 couples of LEDs, each operating at two wavelengths, and a temperature sensor. The hardware system is based on an ARM main microcontroller that allows to perform both the switching time of LEDs and the acquisition of the SiPM outputs. The performed preliminary experimental tests achieved very promising results, thus demonstrating the effectiveness of our fNIRS system.

We report on backward second-harmonic generation using ps laser pulses in congruent lithium niobate with 3.2 µm periodic poling. Three resonant peaks were measured between 1530 and 1730 nm, corresponding to 16th, 17th and 18th quasi-phase-matching orders in the backward configuration, with a conversion efficiency of 4.75 x 10(-5%)/W for the 16th order. We could also discriminate the contributions from inverted domains randomized in duty-cycle.

We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 μm device pitch exhibits the best results, being the best compromise in terms of full depletion and space-strip width ratio.

We performed a Signal to Noise Ratio characterization, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a novel class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal to Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the overall current flowing to the device. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal to Noise Ratio, as a function of the temperature of the SiPM package and at different bias voltages. Furthermore, Excess Noise Factor measurements of the SiPM, as a function of the applied bias, are shown and discussed. Our results show the outstanding performance of this novel class of SiPMs even without the need of any cooling system.

 Abstract— We report on Signal-to-Noise Ratio measurements carried out, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a class of silicon photomultipliers fabricated in planar technology on silicon p- type substrate. Signal-to-Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal-to-Noise Ratio, as a function of the temperature of the SiPM package and at different bias voltages. Our results show the outstanding performance of this class of SiPMs even without the need of any cooling system.

In this paper, a numerical analysis of relevant electrical parameters of multilayer structures for CIGS-based solar cells was carried out, employing the simulation software wxAMPS. In particular, we have focused on thin film cells having a ZnO:Al/ZnO/CdS/CIGS structure with a Molybdenum back contact. The aim of this work is to establish good theoretical reference values for an ongoing experimental activity, where our technology of choice is the single-step electrodeposition. In detail, we have analyzed how the main electrical properties change with the bang gap and the thickness of the absorber layer, for such a type of solar cell structure. Our results show that both efficiency and fill factor strongly depend on the energy gap. Instead, the absorber thickness plays a role up to a few microns, after which the cell parameters remain almost constant. As expected, the theoretical peak efficiency was found for a band gap value of 1.40 eV, corresponding to a Ga/(In+Ga) ratio of 0.66.

This paper analyzes how the electrical characteristics of a CIGS photovoltaic module are affected by the chemical composition and by the thickness variations of the CIGS absorber. The electrical characteristics here considered are the short circuit current, the open circuit voltage, the efficiency and the power peak. The chemical composition is varied by tuning the ratio between gallium and indium. This analysis has been performed by means of the wxAMPS software, developed by the University of Illinois. The above variations have been taken into account on a PV module made of 72 cells. This analysis has been carried out employing a PV module mathematical model developed and implemented by the Authors in Matlab environment.

In this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in $\hbox{Ni}_{2}\hbox{Si}$ . These devices exploit the pinch-off surface effect. $I$ – $V$ and $C$ – $V$ characteristics, as functions of temperature, were measured in dark conditions. In addition, we have carried out responsivity measurements, for wavelengths ranging from 200 to 400 nm, at varying package temperature and applied reverse bias. A comparison among devices having different strip pitch sizes has been performed, thus finding out that the 10- $\mu\hbox{m}$ pitch class demonstrates the top performances as regards the tradeoff between exposed surface area and complete merge of adjacent depleted regions under top contacts.

Functional Near Infrared Spectroscopy (fNIRS) uses near infrared sources and detectors to measure changes in absorption due to neurovascular dynamics in response to brain activation. The use of Silicon Photomultipliers (SiPMs) in a fNIRS system has been estimated potentially able to increase the spatial resolution. Dedicated SiPM sensors have been designed and fabricated by using an optimized process. Electrical and optical characterizations are presented. The design and implementation of a portable fNIRS embedded system, hosting up to 64 IR-LED sources and 128 SiPM sensors, has been carried out. The system has been based on a scalable architecture whose elementary leaf is a flexible board with 16 SiPMs and 4 couples of LEDs each operating at two wavelengths. An ARM based microcontroller has been joined with a multiplexing interface, able to control power supply for the LEDs and collect data from the SiPMs in a time-sharing fashion and with configurable temporal slots. The system will be validated by using a phantom made by materials of different scattering and absorption indices layered to mimic a human head. A preliminary characterization of the optical properties of the single material composing the phantom has been performed using the SiPM in the diffuse radial reflectance measurement technique. The first obtained results confirm the high sensitivity of such kind of detector in the detection of weak light signal even at large distance between the light source and the detector. © 2014 SPIE.

We present an analytical model describing the full electromagnetic propagation in a THz time-domain spectroscopy (THz-TDS) system, from the THz pulses via Optical Rectification to the detection via Electro Optic-Sampling. While several investigations deal singularly with the many elements that constitute a THz-TDS, in our work we pay particular attention to the modelling of the time-frequency behaviour of all the stages which compose the experimental set-up. Therefore, our model considers the following main aspects: (i) pump beam focusing into the generation crystal; (ii) phase-matching inside both the generation and detection crystals; (iii) chromatic dispersion and absorption inside the crystals; (iv) Fabry-Perot effect; (v) diffraction outside, i.e. along the propagation, (vi) focalization and overlapping between THz and probe beams, (vii) electro-optic sampling. In order to validate our model, we report on the comparison between the simulations and the experimental data obtained from the same set-up, showing their good agreement.

We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-µm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.

We demonstrated solid-state broadband coherent Terahertz characterization based on the Terahertz Field Induced Second Harmonic effect in Silica. The THz detector consists of an asymmetric micro-slit array which can be operated at 200V applied bias.