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177 results on '"Alexei N. Baranov"'

1. Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Author

Eric Tournié, Laura Monge Bartolome, Marta Rio Calvo, Zeineb Loghmari, Daniel A. Díaz-Thomas, Roland Teissier, Alexei N. Baranov, Laurent Cerutti, and Jean-Baptiste Rodriguez

Subjects
Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
Abstract

Abstract There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits. We review this rapidly-evolving research field, focusing on the epitaxial integration of antimonide lasers, the only technology covering the whole mid-to-far-infrared spectral range. We explain how a dedicated molecular-beam epitaxy strategy allows for achieving high-performance GaSb-based diode lasers, InAs/AlSb quantum cascade lasers, and InAs/GaInSb interband cascade lasers by direct growth on on-axis (001)Si substrates, whereas GaAs-on-Si or GaSb-on-Si layers grown by metal-organic vapor phase epitaxy in large capability epitaxy tools are suitable templates for antimonide laser overgrowth. We also show that etching the facets of antimonide lasers grown on Si is a viable approach in view of photonic integrated circuits. Remarkably, this review shows that while diode lasers are sensitive to residual crystal defects, the quantum cascade and interband cascade lasers grown on Si exhibit performances comparable to those of similar devices grown on their native substrates, due to their particular band structures and radiative recombination channels. Long device lifetimes have been extrapolated for interband cascade lasers. Finally, routes to be further explored are also presented.

Published
2022
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2. InAs-Based Quantum Cascade Lasers with Extremely Low Threshold

Author

Kumar Kinjalk, Daniel Andres Díaz-Thomas, Zeineb Loghmari, Michael Bahriz, Roland Teissier, and Alexei N. Baranov

Subjects
quantum cascade lasers, mid-infrared lasers, Applied optics. Photonics, TA1501-1820
Abstract

We report InAs-based quantum cascade lasers (QCLs) operating near 14 µm with a threshold current density Jth as low as 0.6 kA/cm2 at room temperature. The threshold obtained is lower than the Jth of the best reported InP-based QCLs to date without facet treatment. The achieved performance improvement is partially due to an increased separation between the upper transition level and the next one in the active quantum wells of the employed QCL design.

Published
2022
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3. Quantum cascade lasers grown on silicon

Author

Hoang Nguyen-Van, Alexei N. Baranov, Zeineb Loghmari, Laurent Cerutti, Jean-Baptiste Rodriguez, Julie Tournet, Gregoire Narcy, Guilhem Boissier, Gilles Patriarche, Michael Bahriz, Eric Tournié, and Roland Teissier

Subjects
Medicine, Science
Abstract

Abstract Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.

Published
2018
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4. Long Wavelength (λ > 17 µm) Distributed Feedback Quantum Cascade Lasers Operating in a Continuous Wave at Room Temperature

Author

Hoang Nguyen Van, Zeineb Loghmari, Hadrien Philip, Michael Bahriz, Alexei N. Baranov, and Roland Teissier

Subjects
quantum cascade laser, distributed feedback, long wavelength infrared, molecular spectroscopy, Applied optics. Photonics, TA1501-1820
Abstract

The extension of the available spectral range covered by quantum cascade lasers (QCL) would allow one to address new molecular spectroscopy applications, in particular in the long wavelength domain of the mid-infrared. We report in this paper the realization of distributed feedback (DFB) QCLs, made of InAs and AlSb, that demonstrated a continuous wave (CW) and a single mode emission at a wavelength of 17.7 µm, with output powers in the mW range. This is the longest wavelength for DFB QCLs, and for any QCLs or semiconductor lasers in general, operating in a CW at room temperature.

Published
2019
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10. On Feasibility of Population Inversion Between the Quantum Confinement Levels in Quantum Wells Under Interband Photoexcitation

Author

A. O. Zakhar'in, A. V. Andrianov, Alexei N. Baranov, A. G. Petrov, and S. V. Egorov

Subjects
Physics, education.field_of_study, Radiation, Terahertz radiation, Population, Electron, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, Population inversion, Photoexcitation, Quantum dot, Electrical and Electronic Engineering, Atomic physics, education, Instrumentation, Quantum well, Excitation
Abstract

We discuss a possibility of achieving population inversion and the associated generation of stimulated terahertz radiation employing transitions between the quantum confinement energy levels of electrons in GaAs/AlGaAs quantum wells under interband photoexcitation. The population inversion occurs between two bottom levels in the conduction band according to a four-level scheme under nonstationary conditions during excitation of electrons from valence band to the top electron state and rapid population of the lower energy level due to processes with the emission of LO-phonons. The time of the depletion of this level due to relatively slow downward energy transitions with the emission of acoustic phonons determines the time interval for the existence of the population inversion, which can amount up to several hundred picoseconds. During this time, the generation of stimulated terahertz radiation is possible at transitions between the two bottom energy levels of electrons in the quantum well.

Published
2021
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13. Benzene sensing by Quartz Enhanced Photoacoustic Spectroscopy at 14.85 µm

Author

Diba Ayache, Wioletta Trzpil, Roman Rousseau, Kumar Kinjalk, Roland Teissier, Alexei N. Baranov, Michael Bahriz, and Aurore Vicet

Subjects
Atomic and Molecular Physics, and Optics
Abstract

Benzene is a gas known to be highly pollutant for the environment, for the water and cancerogenic for humans. In this paper, we present a sensor based on Quartz Enhanced Photoacoustic Spectroscopy dedicated to benzene analysis. Exploiting the infrared emission of a 14.85 µm quantum cascade laser, the sensor is working in an off-beam configuration, allowing easy alignment and stable measurements. The technique provides a very good selectivity to the sensor and a limit of detection of 30 ppbv in 1 s, i.e. a normalized noise equivalent absorption of 1.95 × 10−8 W.cm−1.Hz−1/2. The achieved performances of the sensor have enabled measurements on several air samples of a gas station showing a non-neglectable risk in case of long exposure.

Published
2022

14. Free-Space Communication With Directly Modulated Mid-Infrared Quantum Cascade Devices

Author

Olivier Spitz, Daniel A. Diaz-Thomas, Alexei N. Baranov, Frédéric Grillot, Pierre Didier, Laurent Cerutti, Laureline Durupt, Institut Polytechnique de Paris (IP Paris), Département Communications & Electronique (COMELEC), Télécom ParisTech, Télécommunications Optiques (GTO), Laboratoire Traitement et Communication de l'Information (LTCI), Institut Mines-Télécom [Paris] (IMT)-Télécom Paris-Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, business.industry, Optical communication, Physics::Optics, 02 engineering and technology, Interband cascade laser, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, Atomic and Molecular Physics, and Optics, law.invention, Semiconductor laser theory, 010309 optics, [SPI]Engineering Sciences [physics], Optical path, law, Cascade, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Adaptive optics, Quantum cascade laser
Abstract

International audience; This study deals with the communication capabilities of two kinds of semiconductor lasers emitting in one of the atmosphere transparency windows, around 4 µm. One of these two lasers is a quantum cascade laser and the other one is an interband cascade laser. With the quantum cascade laser, a subsequent attenuation is added to the optical path in order to mimic the attenuation of free-space transmission of several kilometers. Direct electrical modulation is used to transmit the message and two-level formats, non-return-to-zero and return-to-zero, are used and compared in terms of maximum transmission data rate. The sensitivity to optical feedback is also analyzed, as well as the evolution of the error rate when reducing the optical power at the level of the detector. This work provides a novel insight into the development of future secure free-space optical communication links based on midinfrared semiconductor lasers and sheds the light on improvements required to achieve multi-Gbits/s communication with off-the-shelf components. Index Terms-Quantum cascade laser, interband cascade laser, mid-infrared photonics, free-space communication. I. INTRODUCTION T HE development of semiconductor laser technology was considerably boosted with inventing quantum cascade lasers (QCLs) in early 90s [1] and interband cascade lasers (ICLs) shortly afterwards [2]. At the early stages of QCLs, free-space optical transmissions were envisioned [3] alongside Manuscript

Published
2022
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15. Quantum well interband semiconductor lasers highly tolerant to dislocations

Author

Daniel Andres Diaz Thomas, Alexei N. Baranov, Marta Rio Calvo, Laurent Cerutti, Eric Tournié, Jean-Baptiste Rodriguez, Gilles Patriarche, Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, business.industry, 02 engineering and technology, Substrate (electronics), Interband cascade laser, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Semiconductor laser theory, law.invention, 010309 optics, [SPI]Engineering Sciences [physics], Quantum dot laser, law, 0103 physical sciences, Optoelectronics, Dislocation, Photonics, 0210 nano-technology, business, Quantum well
Abstract

III-V semiconductor lasers integrated on Si-based photonic platforms are eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip sensing. The current understanding is that only quantum dot lasers can reasonably operate at the high dislocation densities generated by the III-V-on-Si heteroepitaxy, which induces high non-radiative carrier recombination rates. Here we propose a strategy based on a type-II band alignment to fabricate quantum well lasers highly tolerant to dislocations. A mid-IR GaInSb/InAs interband cascade laser grown on Si exhibits performances similar to those of its counterpart grown on the native GaSb substrate, in spite of a dislocation density in the 10 8 c m − 2 range. Over 3800 h of continuous-wave operation data have been collected, giving an extrapolated mean time to failure exceeding 312,000 h. This validates the proposed strategy and opens the way to new integrated laser development.

Published
2021
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16. Analysis of the relative intensity noise in a Fabry-Perot interband cascade laser revealing relaxation oscillations

Author

Laurent Cerutti, Frédéric Grillot, Pierre Didier, Alexei N. Baranov, Daniel A. Diaz-Thomas, and Olivier Spitz

Subjects
Materials science, Condensed matter physics, business.industry, law, Relative intensity noise, Optoelectronics, Relaxation (physics), Interband cascade laser, business, Fabry–Pérot interferometer, law.invention
Published
2021
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17. Features of Tunneling Current in Superlattices with Electrical Domains

Author

Roland Teissier, Alexei N. Baranov, I. V. Altukhov, A. A. Usikova, Miron S. Kagan, I. A. Kohn, N. D. Il’inskaya, N. A. Khvalkovskiy, S. K. Paprotskiy, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Phonon, Superlattice, media_common.quotation_subject, 02 engineering and technology, 01 natural sciences, Asymmetry, Condensed Matter::Materials Science, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, Quantum well, Quantum tunnelling, media_common, 010302 applied physics, Radiation, Condensed matter physics, 020206 networking & telecommunications, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Electronic, Optical and Magnetic Materials, Hysteresis, Maxima, Voltage
Abstract

—The tunneling electron transport in GaAs/AlAs and InAs/AlSb superlattices with electric domains at room temperature is studied. At voltages above the threshold for the formation of domains, a series of maxima on the current–voltage characteristics, almost equidistant in voltage, and current hysteresis during direct and reverse voltage sweeps were found. An explanation is proposed relating the origin of these maxima to tunnel transitions between quantum wells in a triangular domain, assisted by the emission of optical phonons, and hysteresis with a transition between modes with a moving and static domain. The large asymmetry of the transition times between domain modes was found.

Published
2019
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18. Population inversion between the quantum confinement levels in quantum wells under resonant interband photoexcitation

Author

Alexei N. Baranov, A. G. Petrov, A. V. Andrianov, S. V. Egorov, and A. O. Zakhar'in

Subjects
Physics, education.field_of_study, Terahertz radiation, Population, Electron, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Population inversion, Photoexcitation, Condensed Matter::Materials Science, Quantum dot, Atomic physics, education, Quantum well, Excitation
Abstract

A possibility to achieve population inversion and the associated generation of stimulated terahertz radiation employing transitions between energy levels of electrons in GaAs/AlGaAs quantum wells under resonant interband photoexcitation is discussed. The proposed population inversion occurs between two bottom levels in the conduction band according to a four-level scheme under nonstationary conditions during excitation of electrons from the valence band to the top electron state in QW and rapid population of the lower energy level due to processes with the emission of LO-phonons.

Published
2021
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20. Chaos Bandwidth in Mid-infrared Quantum Cascade Photonic Devices with Interband and Intersubband Transitions

Author

Laurent Cerutti, Mathieu Carras, Gregory Maisons, Frédéric Grillot, Chee Wei Wong, Alexei N. Baranov, Pierre Didier, Olivier Spitz, Daniel A. Diaz-Thomas, Jiagui Wu, Institut Polytechnique de Paris (IP Paris), Département Communications & Electronique (COMELEC), Télécom ParisTech, Télécommunications Optiques (GTO), Laboratoire Traitement et Communication de l'Information (LTCI), Institut Mines-Télécom [Paris] (IMT)-Télécom Paris-Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, University of California [Los Angeles] (UCLA), University of California, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Mirsense, Nanno-INNOV

Subjects
Physics, business.industry, Random number generation, Chaotic, 01 natural sciences, Semiconductor laser theory, 010309 optics, [SPI]Engineering Sciences [physics], Cascade, 0103 physical sciences, Bandwidth (computing), Optoelectronics, Photonics, 010306 general physics, business, Quantum well infrared photodetector, Quantum
Abstract

International audience; We experimentally display temporal chaotic waveforms in the mid-infrared domain with two different types of semiconductor lasers. The generated high-dimensional non-linear dynamics are of prime interest for private communications and physical random number generation.

Published
2021

21. Mid-IR lasers epitaxially grown on on-axis (001) Silicon

Author

Michael Bahriz, Ariane Meguekam, Marta Rio Calvo, Eric Tournié, Daniel A. Diaz-Thomas, Laura Monge-Bartolome, Zeineb Loghmari, Jean-Baptiste Rodriguez, Guilhem Boissier, Roland Teissier, Laurent Cerutti, Alexei N. Baranov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Silicon photonics, Materials science, Silicon, business.industry, chemistry.chemical_element, Laser, Epitaxy, law.invention, Wavelength, [SPI]Engineering Sciences [physics], chemistry, law, Etching (microfabrication), Optoelectronics, Wafer, business, ComputingMilieux_MISCELLANEOUS, Diode
Abstract

The integration of mid-IR lasers with Si-based platforms is needed for the development of smart sensor grids. Here we review our recent results on laser diodes (LDs), interband-cascade lasers (ICLs) and quantum-cascade lasers (QCLs), all grown on on-axis (001) Si substrates and covering emission wavelengths from 2 to 10 µm. In addition, we will demonstrate that etching facets is a viable route toward cavity definition either on plain wafers or recessed Si wafers.

Published
2021
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22. Long wavelength (λ = 10 - 20 µm) mid-IR quantum cascade lasers for spectroscopy applications

Author

Alexei N. Baranov, Hadrien Philip, Zeineb Loghmari, Michael Bahriz, and Roland Teissier

Subjects
Range (particle radiation), Materials science, Thermoelectric cooling, business.industry, Grating, Laser, law.invention, Wavelength, Cascade, law, Optoelectronics, business, Spectroscopy, Quantum
Abstract

We report new developments of quantum cascade lasers (QCL), made of InAs/AlSb, operating in the long wavelength mid-infrared range from 10 to 20 µm. Fabry-Perot lasers operated in the CW regime up to a wavelength of 18 µm at 40°C, and up to 21 µm on Peltier cooler, with threshold current densities below 1 kA/cm². Distributed feedback QCL are also fabricated using a metal grating on the top of the laser ridges. They demonstrated single frequency operation in CW regime at room temperature. These lasers are suitable for new high resolution spectroscopy applications in this almost unexplored spectral range.

Published
2021
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23. High-speed transmissions with direct-modulation room-temperature semiconductor lasers emitting in the transparency window around 4 µm

Author

Frédéric Grillot, Pierre Didier, Alexei N. Baranov, Laurent Cerutti, Olivier Spitz, Laureline Durupt, M. Carras, Daniel A. Diaz-Thomas, Institut Polytechnique de Paris (IP Paris), Département Communications & Electronique (COMELEC), Télécom ParisTech, Télécommunications Optiques (GTO), Laboratoire Traitement et Communication de l'Information (LTCI), Institut Mines-Télécom [Paris] (IMT)-Télécom Paris-Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, Mirsense, Nanno-INNOV, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, Semiconductor laser theory, [SPI]Engineering Sciences [physics], Transmission (telecommunications), Cascade, law, Modulation, Fiber laser, 0103 physical sciences, Optoelectronics, Metre, 010306 general physics, 0210 nano-technology, business, Quantum
Abstract

International audience; We experimentally realize a free-space transmission over one meter with roomtemperature quantum cascade lasers and interband cascade lasers. With direct electrical modulation and raw analysis, the data-rate of the real-time transmission outperforms similar reported schemes.

Published
2021

24. Turn-on delay in the mid-infrared quantum-cascade lasers: experiment and numerical simulations

Author

A. G. Gladyshev, Sergey O. Slipchenko, Grigorii S. Sokolovskii, Alexei N. Baranov, A. V. Babichev, Nikita A. Pikhtin, Anton Yu. Egorov, Leonid Ya. Karachinsky, S. N. Losev, Andrey V. Lutetskiy, I. I. Novikov, Dmitry A. Veselov, Evgenia D. Cherotchenko, E. A. Kognovitskaya, V. I. Kuchinskii, Vladislav V. Dudelev, D. V. Denisov, Roland Teissier, and Dmitry A. Mikhailov

Subjects
Physics, Computer simulation, Mid infrared, Physics::Optics, Laser, Pulse shaping, Computational physics, law.invention, Condensed Matter::Materials Science, law, Cascade, Turn (geometry), Spontaneous emission, Quantum
Abstract

Turn-on delay is measured to be much longer and its pump-current dependence different from theoretical predictions for mid-infrared InP- and InAs-based quantum-cascade lasers. Experiment qualitatively agrees with numerical simulations of rate-equations under non-zero rise-time pumping.

Published
2021
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25. Turn-on Delay of Quantum Cascade Lasers under Pulsed Pumping with Non-zero Rise-time

Author

Vladislav V. Dudelev, Alexei N. Baranov, Sergey O. Slipchenko, Nikita A. Pikhtin, Grigorii S. Sokolovskii, A. V. Lyutetskiy, I. I. Novikov, A. Yu. Egorov, A. V. Babichev, D. A. Mikhailov, E. D. Cherotchenko, L. Ya. Karachinsky, and A. G. Gladyshev

Subjects
010302 applied physics, Physics, Zero (complex analysis), Physics::Optics, Rate equation, Function (mathematics), Laser, 01 natural sciences, law.invention, 010309 optics, Amplitude, Cascade, law, Rise time, Quantum electrodynamics, 0103 physical sciences, Quantum
Abstract

We study the turn-on delay of quantum cascade lasers as a function of the amplitude of pulsed electrical pumping with non-zero rise-time. Although observed QCL dynamics is much slower than the theoretical predictions, our numerical simulations qualitatively agree with experiment.

Published
2020
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26. 3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth

Author

Michael Bahriz, Cyril Paranthoen, Guilhem Almuneau, Alexei N. Baranov, Daniel A. Diaz-Thomas, Thomas Batte, Stephane Calvez, Eric Tournié, Oleksandr Stepanenko, Laurent Cerutti, Gilles Patriarche, Christophe Levallois, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), ANR, ANR-16-CE24-0011,MIMIC-SEL,VCSEL antimoniure métamorphique à cascade quantique interbande pour le moyen infrarouge(2016), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, 02 engineering and technology, Dielectric, Resonant cavity, 7. Clean energy, 01 natural sciences, law.invention, Laser linewidth, law, 0103 physical sciences, Materials Chemistry, Emission spectrum, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, midinfrared, 010302 applied physics, RCLED, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, interband-cascade, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Full width at half maximum, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Continuous wave, Optoelectronics, 0210 nano-technology, business, Light-emitting diode
Abstract

We demonstrate an interband cascade resonant cavity light emitting diode (IC-RCLED) operating near 3.3 µm at room temperature. The device is composed of a Sb-based type-II interband-cascade active zone enclosed between two distributed Bragg mirrors (DBR). The bottom high reflective DBR is composed of GaSb/AlAsSb quarter-wave layers. A metamorphic III-As region is grown after the active zone to benefit from the AlOx technology for efficient electro-optical confinement. The structure is finished with a top ZnS/Ge dielectric DBR. The devices with oxide aperture ranging from 5 µm to 35 µm were studied in the continuous wave regime. The fabricated IC-RCLEDs operated up to 80 °C (set-up limited) and exhibited narrow emission spectra with a full width half maximum of 21 nm, which is 20 times smaller compared with conventional IC-LEDs. The narrow emission line and its weak temperature dependence make the fabricated devices very attractive for low cost gas sensors.

Published
2020
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27. Progress in Interband Cascade Lasers: From Edge Emitting Lasers to VCSELs

Author

Laurent Cerutti, Eric Tournié, Stephane Calvez, Guilhem Almuneau, Alexei N. Baranov, Michael Bahriz, Oleksandr Stepanenko, Thomas Batte, Daniel Andres Diaz Thomas, Christophe Levallois, Cyril Paranthoen, Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT), ANR-16-CE24-0011,MIMIC-SEL,VCSEL antimoniure métamorphique à cascade quantique interbande pour le moyen infrarouge(2016), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université de Montpellier (UM), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), ANR, Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)

Subjects
GaSb, Materials science, resonant-cavity light-emitting diode, Physics::Optics, 02 engineering and technology, Edge (geometry), 01 natural sciences, law.invention, Vertical-cavity surface-emitting laser, [SPI.MAT]Engineering Sciences [physics]/Materials, 010309 optics, law, vertical-cavity surface-emitting laser, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, mid-infrared sources, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Spectroscopy, Astrophysics::Galaxy Astrophysics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, 020208 electrical & electronic engineering, GaAs, Laser, laser, Wavelength, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Integrated optics, business
Abstract

International audience; Mid-infrared lasers are crucial devices to enable optical spectroscopy in this spectral region of strategic importance for molecular sensing. In this presentation, we will review our recent progress in mid-infrared sources based on interband cascade active regions for operation in the L-band (wavelength of ~ 3.4μm) and in particular towards the demonstration of VCSELs, the most promising laser embodiment for energy-efficient portable tunable sources.

Published
2020
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28. Study of resonant transport in InAs-based quantum hot electron transistors

Author

Roland Teissier, Alexei N. Baranov, M. Zaknoune, H. Nguyen Van, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), The authors thank the support of French Agence Nationale de la Recherche under the program TACHUS2 (Grant No. ANR-08-BLANC-0299), and ANR-08-BLAN-0299,TACHUS2,Transistors à électrons chauds ultra-rapide à base d'InAs(2008)

Subjects
Materials science, General Physics and Astronomy, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, 7. Clean energy, law.invention, Computer Science::Hardware Architecture, [SPI]Engineering Sciences [physics], Computer Science::Emerging Technologies, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Breakdown voltage, Quantum, Quantum tunnelling, ComputingMilieux_MISCELLANEOUS, Common emitter, 010302 applied physics, business.industry, Transistor, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Hot electron transistors, lcsh:QC1-999, Optoelectronics, Physics::Accelerator Physics, Current (fluid), 0210 nano-technology, business, lcsh:Physics
Abstract

A study of transport in a quantum hot electron transistor made of an InAs/AlSb heterostructure is reported. It exhibited that the quantum hot electron transistors with a thick emitter efficiently prevented the parasitic base currents compared with transistors with a thin emitter. The static characteristics of the fabricated devices demonstrated an enhancement of the current gain of 9 and a collector breakdown voltage of 1.5 V with thick-emitter designed transistors. In optimized devices, the current is dominated by fast resonant tunneling that is promising for their future development of as high frequency transistors.

Published
2020
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29. Strong optical coupling between semiconductor microdisk lasers: From whispering gallery modes to collective modes

Author

Alexei N. Baranov, Mikhail Roiz, Roland Teissier, A. M. Monakhov, E.V. Kunitsyna, Yury P. Yakovlev, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), University of Helsinki, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Department of Chemistry

Subjects
116 Chemical sciences, General Physics and Astronomy, Physics::Optics, 02 engineering and technology, 01 natural sciences, Optical coupling, law.invention, RESONATORS, law, 0103 physical sciences, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Physics, Coupling, [PHYS]Physics [physics], business.industry, Single-mode optical fiber, Mode (statistics), Resonance, 021001 nanoscience & nanotechnology, Laser, Semiconductor, Optoelectronics, Whispering-gallery wave, 0210 nano-technology, business
Abstract

In the present paper, we investigate a special type of optical coupling between two electrically pumped semiconductor whispering gallery mode lasers. We fabricate microdisk lasers with a conjunction between the laser cavities, making the coupling stronger. Our experimental results combined with numerical calculations demonstrate a variety of mode families that exist in such systems. Furthermore, we confirm the generation of resonance modes that exist only under simultaneous pumping conditions. These modes are attributed to the collective mode family, which can lead to a single mode operation.

Published
2020
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30. Relative intensity noise and intrinsic properties of RF mounted interband cascade laser

Author

Daniel A. Diaz-Thomas, M. Carras, Pierre Didier, Olivier Spitz, Alexei N. Baranov, Laurent Cerutti, and Frédéric Grillot

Subjects
Physics, Physics and Astronomy (miscellaneous), Differential gain, Relative intensity noise, business.industry, Biasing, 02 engineering and technology, Interband cascade laser, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Laser, Semiconductor laser theory, law.invention, 020210 optoelectronics & photonics, Cascade, law, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, 0210 nano-technology, business, Quantum
Abstract

Interband cascade lasers are semiconductor lasers emitting in the mid-infrared domain but relying on interband transitions, contrary to their intersubband counterparts, quantum cascade lasers. Our experimental study of the relative intensity noise in a multi-mode interband cascade laser at 4.1 μm shows that the room-temperature structure exhibits a relaxation frequency in the GHz range. We demonstrate that, far above the threshold current, the relaxation frequency increases with the bias current, and our simulations are in good agreement with our experimental efforts. Fitting of the relative intensity noise resonances gives access to several intrinsic parameters of the interband cascade laser under study such as differential gain, compression gain, and K-factor. This study is a clear step for understanding dynamics interplays in interband cascade laser structures, which means understanding the non-linear and modulation bandwidth limitations of such lasers.

Published
2021
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31. InAs‐based quantum cascade lasers emitting close to 25 µm

Author

A. Meguekam, Roland Teissier, Alexei N. Baranov, Michael Bahriz, Z. Loghmari, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Threshold current, Physics::Instrumentation and Detectors, Physics::Optics, 02 engineering and technology, law.invention, [SPI]Engineering Sciences [physics], Condensed Matter::Materials Science, chemistry.chemical_compound, law, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Quantum, ComputingMilieux_MISCELLANEOUS, business.industry, 020208 electrical & electronic engineering, Laser, Cladding (fiber optics), chemistry, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Pulsed mode, Indium arsenide, business, Current density
Abstract

Indium arsenide (InAs)-based quantum cascade lasers (QCLs) operating close to 25 µm are reported. Thick n-doped InAs cladding layers were used for optical confinement. Fabry–Perot lasers exhibited a threshold current density as low as 1.1 kA/cm2 in pulsed mode at 80 K. The lasers operated in this regime up to 240 K, where the threshold current density increased up to 1.7 kA/cm2. These are the lowest threshold current densities for QCLs operating above 20 µm.

Published
2019
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32. InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

Author

Roland Teissier, Laurent Cerutti, A. Meguekam, Michael Bahriz, Jean-Baptiste Rodriguez, Alexei N. Baranov, M. Rio-Calvo, Eric Tournié, Zeineb Loghmari, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
lcsh:Applied optics. Photonics, Materials science, Threshold current, Silicon, Computer Networks and Communications, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 01 natural sciences, 7. Clean energy, law.invention, 010309 optics, Operating temperature, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum, business.industry, lcsh:TA1501-1820, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, chemistry, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Photonics, 0210 nano-technology, business
Abstract

International audience; We present InAs/AlSb quantum cascade lasers (QCLs) monolithically integrated on an on-axis (001) Si substrate. The lasers emit near 8 μm with threshold current densities of 0.92-0.95 kA/cm 2 at 300 K for 3.6-mm-long devices and operate in pulsed mode up to 410 K. QCLs of the same design grown for comparison on a native InAs substrate demonstrated a threshold current density of 0.75 kA/cm 2 and the same maximum operating temperature. The low threshold current density of the QCLs grown on Si makes them suitable for photonic integrated sensor implementation.

Published
2020
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33. Stable and Unstable Spatial Modes in a Resonator with a Half-Disk Shape

Author

Prokhor A. Alekseev, Grigorii S. Sokolovskii, Mikhail S. Dunaevskiy, Roland Teissier, A. M. Monakhov, Richard Arinero, Alexei N. Baranov, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Work (thermodynamics), Geometrical optics, 02 engineering and technology, Visible radiation, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electromagnetic radiation, Atomic and Molecular Physics, and Optics, Electronic equipment, Electronic, Optical and Magnetic Materials, Resonator, Wavelength, Photon emission, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Atomic physics, 010306 general physics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

This work was devoted to the study of stable and unstable optical modes in segment shaped resonators. The size of the studied resonators was much larger than the wavelength of the emitted light, that allowed to use the approaches of geometric optics. It was observed, that with an increase in the δ/R deviation parameter (where δ is the deviation from the center of the half-disk) only a small number of stable spatial modes remain. The possibility of the existence of “sealed” (non-radiating modes) and “open” modes (radiating modes) in resonators of this type was also shown.

Published
2018
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34. Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µm

Author

D. Díaz-Thomas, Alexei N. Baranov, Michael Bahriz, Stephane Calvez, Eric Tournié, Oleksandr Stepanenko, Laurent Cerutti, Guilhem Almuneau, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), ANR-11-EQPX-0016,EXTRA,Centre d'Excellence sur les Antimoniures(2011), ANR-16-CE24-0011,MIMIC-SEL,VCSEL antimoniure métamorphique à cascade quantique interbande pour le moyen infrarouge(2016), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UPS), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse 1 Capitole (UT1)-Université Toulouse - Jean Jaurès (UT2J)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse 1 Capitole (UT1)-Université Toulouse - Jean Jaurès (UT2J), and ANR-11-EQPX-0016/11-EQPX-0016,EXTRA,Centre d'Excellence sur les Antimoniures(2011)

Subjects
[PHYS]Physics [physics], Tunable diode laser absorption spectroscopy, Materials science, business.industry, Superlattice, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, Cladding (fiber optics), 01 natural sciences, Atomic and Molecular Physics, and Optics, law.invention, Semiconductor laser theory, 010309 optics, [SPI]Engineering Sciences [physics], Optics, law, Cascade, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Continuous wave, Quantum efficiency, 0210 nano-technology, business
Abstract

International audience; We investigate the impact of the growth conditions of AlGaAsSb cladding layers on the properties of interband cascade lasers (ICLs). For an optimized structure emitting at 3.3 µm, we achieve an internal quantum efficiency of 65% per stage in good agreement with conventional ICL using InAs/AlSb superlattice cladding layers, in spite of internal losses of 15 cm −1 due to higher optical losses in the n-type AlGaAsSb alloys. Finally, we report a narrow ridge ICL emitting at 3.33 µm operating in continuous wave up to 80°C that produces 1 mW/uncoated facet at 80°C, 10 mW at 40°C and more than 12 mW at 20°C.

Published
2019
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35. Long wavelength (λ = 10 - 18 μm) mid-IR quantum cascade lasers operating in a continuous wave at room temperature

Author

F. Barho, Hadrien Philip, Michael Bahriz, Z. Loghmari, Roland Teissier, and Alexei N. Baranov

Subjects
Range (particle radiation), Materials science, business.industry, Terahertz radiation, Physics::Optics, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, 010309 optics, Long wavelength, Wavelength, Cascade, law, 0103 physical sciences, Continuous wave, Optoelectronics, 0210 nano-technology, business, Quantum
Abstract

We report a study of quantum cascade lasers (QCL), made of InAs and AlSb, operating in the long wavelength mid-infrared range. Lasers based on a design with slightly diagonal intersubband transitions demonstrated improved performances as compared to the previously reported devices employing a vertical scheme. The fabricated lasers operated in the CW regime at 40°C up to a wavelength of 18 μm.

Published
2019
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36. Intersubband terahertz emission from coupled GaAs/AlGaAs double quantum wells under interband photoexcitation

Author

R. Teissier, A. O. Zakhar'in, Alexei N. Baranov, and A. V. Andrianov

Subjects
010302 applied physics, Materials science, Photoluminescence, Condensed Matter::Other, business.industry, Terahertz radiation, Physics::Optics, 02 engineering and technology, Electron, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Optical pumping, Photoexcitation, Quantum dot, 0103 physical sciences, Optoelectronics, Stimulated emission, Emission spectrum, 0210 nano-technology, business
Abstract

Terahertz range photoluminescence from specially designed structures with tunnel coupled double quantum wells under interband optical excitation has been investigated. A series of narrow emission lines were observed and interpreted as intersubband radiative transitions between electron quantum confinement levels.

Published
2019
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37. Low-pump irradiance to modulate THz waves driven by photo-generated carriers in an InAs slab

Author

Alexei N. Baranov, R. Smaali, Thierry Taliercio, Philippe Nouvel, E. Alvear-Cabezon, F. Gonzalez-Posada, Stéphane Blin, Emmanuel Centeno, and Roland Teissier

Subjects
Permittivity, 0303 health sciences, Electromagnetics, Materials science, business.industry, Terahertz radiation, Ambipolar diffusion, 02 engineering and technology, Rate equation, 021001 nanoscience & nanotechnology, Optical pumping, 03 medical and health sciences, Modulation, Continuous wave, Optoelectronics, 0210 nano-technology, business, 030304 developmental biology
Abstract

We theoretically and experimentally study the THz electromagnetic properties of an undoped-InAs slab whose permittivity is optically modified by a photo-generation process. The modulation of the permittivity is calculated by solving the ambipolar rate equation for the free carriers. Experiment results demonstrate that InAs is a promising semiconductor to manufacture fast and efficiently on-chip THz components. We show a high modulation of the THz transmission up to 100% from 0.75 to 1.1THz at very low pump fluence in the continuous wave regime. We also demonstrate a high-speed transmission modulation rate up to the MHz range with a modulated pump.

Published
2019
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38. Towards MIR VCSELs operating in CW at RT

Author

Laurent Cerutti, Stephane Calvez, Alexei N. Baranov, Christophe Levallois, Guilhem Almuneau, Cyril Paranthoen, Michael Bahriz, Eric Tournié, Oleksandr Stepanenko, Daniel Andres Diaz Thomas, Thomas Batte, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), ANR-16-CE24-0011,MIMIC-SEL,VCSEL antimoniure métamorphique à cascade quantique interbande pour le moyen infrarouge(2016), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] (LAAS), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UPS), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UPS), Université Fédérale Toulouse Midi-Pyrénées, Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)

Subjects
Range (particle radiation), Materials science, Mid-Infrared, business.industry, Mid infrared, Physics::Optics, Dielectric, Distributed Bragg reflector, 7. Clean energy, VCSEL, ICL, Arsenide, Vertical-cavity surface-emitting laser, [SPI.MAT]Engineering Sciences [physics]/Materials, Condensed Matter::Materials Science, chemistry.chemical_compound, Semiconductor, chemistry, Cascade, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; We present a new design of a Vertical Cavity Surface Emitting Laser (VCSEL) emitting in the Mid Infrared (MIR) spectral range. This new design relies on three key elements: An Interband Cascade (IC) active region, a hybrid structure with a dielectric and a semiconductor Bragg mirror and an arsenide layer for the optical and electric confinement (Fig. 1). Vertical cavity surface emitting lasers (VCSELs) are particularly well suited for Tunable Diode Laser Spectroscopy due to their intrinsic characteristics. Indeed, the low threshold single frequency emission producing a circular low divergence output beam is beneficial for the development of compact and low power consumption systems for gas spectroscopy. However, in the 3-4 µm range, which encompasses strong absorption bands of many species, only few VCSELs operating either at room temperature (RT) in pulsed mode [1] or in continuous wave (CW) at low temperature [2] have been reported so far. To demonstrate VCSEL operating in the CW regime above RT, we propose a new alternative. This approach is based on Interband Cascade (IC) design for the active region, an arsenide oxide lateral confinement schema, a hybrid-mirror technology and on an intracavity contact (Fig. 1). To provide efficient emission in the 3-4 µm range, the active region is based on a Sb-based IC type-II "W" QW structure. Principal characteristics of Sb-based QW lasers, such as the emission wavelength and threshold, are strongly affected by the growth temperature of the layers located above the active region. We studied a set of edge emitting ICLs designed to operate at 3.3 µm. The lasers were fabricated by Molecular Beam Epitaxy (MBE) on GaSb substrates and their AlGaAsSb top cladding layers were grown at different temperatures. When the growth temperature of the top cladding layer is higher than the optimal one which is used for the active region (435°C), a significant increase of the threshold current densities is observed while the emission wavelength is blue-shifted. This performance degradation is attributed to the inter-diffusion occurring in the active region during the growth. Indeed, it broadens the interfaces and leads to the shift of the quantum level to higher energy, affecting the injection efficiency. Using the optimized growth conditions, we succeeded to fabricate lasers emitting at 3.3 µm and operating in the CW regime up to 80°C (Fig. 2), which confirms the potential of the developed active region. Since the DBRs thickness scales with the wavelength, a fully monolithic approach is not viable in this wavelength range. For this reason, we employed a hybrid VCSEL configuration with a semiconductor AlAsSb/GaSb DBR in the bottom part of the device and a dielectric DBR on the top. Another issue in the VCSEL design is the high electrical resistance of the AlAsSb/GaSb DBR resulting in the overheating of the device. To reduce the ohmic losses we employed an intracavity injection scheme, to avoid highly doped n-type DBRs (in our case ND~5x10 16 cm-3) and thus reach low optical losses in the VCSEL cavity. The top dielectric DBR is composed of Ge and ZnS and benefits from a large refractive index contrast (n~2) and thus from a wide stop-band. The Fig. 3 presents both reflectivity spectra of a 24 pairs n-doped AlAsSb/GaSb grown by MBE and a 5 pairs Ge/ZnS DBRs deposited by magnetron sputtering. The two DBRs are well centered at 3.3 µm. Finally, to ensure an efficient lateral electro-optical confinement, we propose to use an oxide-aperture similarly as short infrared VCSELs [3]. This approach is based on the metamorphic growth and the selective thermal oxidation of an Al(Ga)As heterostructure on top of a GaSb-based half-VCSEL (Fig. 1). This architecture presents several advantages, and in particular the use of the well-controlled Al(Ga)As oxidation process [4]. As already discussed, the growth temperature above the active region affects strongly the performances of the active region. For this reason, we have first determined, with Hall measurement, that n-type GaAs grown at 435°C on undoped GaAs substrate present a better doping efficiency by using Te instead of the usual Si. This is related to the lower activation energy required with Te. Metamorphic GaAs on GaSb growth will be then realized and carefully studied to determine the electrical and optical properties of such layers. We will show our last achievements towards the realization of MIR-VCSELs.

Published
2019
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39. Terahertz quantum cascade laser with non-resonant extraction

Author

Zeineb Loghmari, Alexei N. Baranov, Michael Bahriz, H. Nguyen-Van, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Terahertz radiation, Phonon, General Physics and Astronomy, Physics::Optics, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, Gallium arsenide, chemistry.chemical_compound, Operating temperature, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Laser, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, lcsh:QC1-999, chemistry, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Waveguide, lcsh:Physics
Abstract

In order to improve the maximum operating temperature of THz quantum cascade lasers (QCLs) we propose to modify the three well resonant phonon design by increasing the energy of the separation between the bottom transition levels and the ground states, which is usually adjusted to the LO-phonon energy in GaAs. The fabricated devices based on this design with non-resonant depopulation of the bottom transition level operated in pulsed mode up to 190K, which is the best-reported performance for THz QCLs with Al0.15Ga0.85As barriers based on an Au-Au double-metal waveguide. The performed analysis showed that the achieved improvement could be explained by the proposed design modification.In order to improve the maximum operating temperature of THz quantum cascade lasers (QCLs) we propose to modify the three well resonant phonon design by increasing the energy of the separation between the bottom transition levels and the ground states, which is usually adjusted to the LO-phonon energy in GaAs. The fabricated devices based on this design with non-resonant depopulation of the bottom transition level operated in pulsed mode up to 190K, which is the best-reported performance for THz QCLs with Al0.15Ga0.85As barriers based on an Au-Au double-metal waveguide. The performed analysis showed that the achieved improvement could be explained by the proposed design modification.

Published
2019
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40. Observation of the increase in turn-on delay of quantum cascade lasers under pulsed electrical pumping with finite rise time

Author

D. A. Mikhailov, Nikita A. Pikhtin, E. D. Cherotchenko, Grigorii S. Sokolovskii, Alexei N. Baranov, Innokenty I. Novikov, D. V. Denisov, D. A. Veselov, A. G. Gladyshev, Sergey O. Slipchenko, S. N. Losev, A. V. Babichev, A. Yu. Egorov, E. A. Kognovitskaya, V. I. Kuchinskii, A. V. Lutetskiy, L. Ya. Karachinsky, Roland Teissier, and Vladislav V. Dudelev

Subjects
History, Materials science, business.industry, Laser, Computer Science Applications, Education, law.invention, law, Cascade, Rise time, Turn (geometry), Optoelectronics, business, Quantum
Abstract

We demonstrate the experimental measurements of the turn-on delay in InAs-and InP-based quantum cascade lasers operating under pulsed electrical pumping with non-zero rise time. We report the unexpected delay time dependence on the pumping current density, that does not agree with available theoretical predictions. Performed numerical simulation of the model based on rate equations is only in qualitative, but not quantitative, agreement with our observations.

Published
2020
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41. Epsilon near-zero all-optical terahertz modulator

Author

Alexei N. Baranov, E. Alvear-Cabezon, Emmanuel Centeno, Stéphane Blin, R. Smaali, Roland Teissier, Thierry Taliercio, F. Gonzalez-Posada, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Clermont Auvergne [2017-2020] (UCA [2017-2020]), Institut Pascal (IP), and SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne [2017-2020] (UCA [2017-2020])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Terahertz radiation, business.industry, Attenuation, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, Amplitude modulation, Semiconductor, Transmission (telecommunications), Modulation, law, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Irradiation, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; We propose an efficient optically actuated THz modulator based on an ultrathin epsilon-near-zero (ENZ) slab photogenerated in an InAs semiconductor. We experimentally demonstrate a modulation depth of 90% at 1 THz obtained with a continuous laser at irradiation lower than 10 W cm À2. Beyond the strong attenuation of the THz transmission provided by the ENZ absorption effect, we also report a broadband modulation of the THz waves from 1 to 10 THz. In addition, our experimental results show that the cutoff frequency of 3 dB attains 2 MHz in the dynamic modulation regime.

Published
2020
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42. Antimonide-based optoelectronic devices grown on Si substrates (Conference Presentation)

Author

Alexei N. Baranov, Philippe Christol, Jean-Baptiste Rodriguez, Roland Teissier, Eric Tournié, Laurent Cerutti, Jean-Philippe Perez, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Materials science, business.industry, media_common.quotation_subject, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 010309 optics, [SPI]Engineering Sciences [physics], Presentation, 0103 physical sciences, Antimonide, Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Molecular beam epitaxy, media_common
Abstract

International audience

Published
2019
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43. Off-beam QEPAS sensor using an 11-μm DFB-QCL with an optimized acoustic resonator

Author

Michael Bahriz, Roman Rousseau, Kaim Chamassi, Alexei N. Baranov, Zeineb Loghmari, Aurore Vicet, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Detection limit, Materials science, Mems microphone, business.industry, Stray light, Photoacoustic imaging in biomedicine, 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Atomic and Molecular Physics, and Optics, law.invention, 010309 optics, Resonator, [SPI]Engineering Sciences [physics], Optics, law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, Quantum cascade laser, business, Photoacoustic spectroscopy, Beam (structure), ComputingMilieux_MISCELLANEOUS
Abstract

An off-beam quartz-enhanced photoacoustic spectroscopy (QEPAS) sensor was designed for ethylene detection using a distributed-feedback quantum cascade laser (QCL) operating in the mid-infrared around 11 μm. The acoustic microresonator configuration was experimentally optimized using an original open-cell photoacoustic setup with a MEMS microphone. Correction factors based on theoretical acoustic models were introduced in order to accurately describe the response of millimeter-sized acoustic resonators. The optimized QEPAS sensor exhibited a limit of detection of 60 ppb for 60 s integration, giving a NNEA of 4.8 × 10−8 W·cm−1·Hz-0.5.

Published
2019
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44. Half-disk laser: insight into the internal mode structure of laser resonators

Author

Alexei N. Baranov, Vladislav V. Dudelev, A. M. Monakhov, Prokhor A. Alekseev, Richard Arinero, Mikhail S. Dunaevskiy, Grigorii S. Sokolovskii, Roland Teissier, Institut d’Electronique et des Systèmes ( IES ), Université de Montpellier ( UM ) -Centre National de la Recherche Scientifique ( CNRS ), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, Geometrical optics, business.industry, Physics::Optics, Near and far field, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, Atomic and Molecular Physics, and Optics, law.invention, Resonator, [SPI]Engineering Sciences [physics], Optics, law, Optical cavity, 0103 physical sciences, [ SPI ] Engineering Sciences [physics], Disk laser, Emission spectrum, Whispering-gallery wave, 010306 general physics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

Usually electromagnetic modes inside a laser resonator are a matter of the theoretical studies. In a sense we manage "to have a look into a whispering gallery mode (WGM) resonator" and observe how the resonator modes arrange in reality. The picture occurs to be quite different from the commonly used Bessel modes in a disk resonator. A chance to explore optical modes inside a resonator appears in a WGM laser with a cleaved cavity. The flat laser facet gives an opportunity to study both far and near field patterns formed by different modes. In this research we use a high resolution technique of detection of laser emission based on an atomic force microscope, which allowed us to visualize even high Q modes normally sealed inside the resonator. This information was completed with spatially resolved emission spectra and far-field patterns measured using an infrared camera. The analysis of the obtained results using both wave and geometrical optics approaches and finite elements simulations showed that emission of the studied devices is governed by a few low order optical modes experiencing a small number of reflections from the resonator walls. These modes can be considered as counter propagating Gaussian beams and their interference at the laser facet was also observed in the experiment. This work showed that, contrary to conventional ridge or surface emitting lasers, in such deformed disk resonators outputs of different optical modes are spatially separated and can be studied individually along the cleaved facet of the laser.

Published
2018
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45. Strong and weak optical coupling of electrically pumped mid-infrared semiconductor disk lasers

Author

M. A. Royz, Alexei N. Baranov, Yu. P. Yakovlev, E. A. Grebenshchikova, and A. M. Monakhov

Subjects
Materials science, business.industry, Quantum heterostructure, Physics::Optics, Laser, Semiconductor laser theory, law.invention, Semiconductor, law, Fiber laser, Optoelectronics, Physics::Atomic Physics, Emission spectrum, Whispering-gallery wave, business, Astrophysics::Galaxy Astrophysics, Free spectral range
Abstract

We present concepts of strong and weak optically coupled electrically pumped disk lasers operating on collective Whispering Gallery Modes. The laser samples are based on quantum heterostructure GaInAsSb/AlGaAsSb. Emission spectra and directional patterns of the coupled disc lasers have been studied. It is shown that these lasers generate collective modes with twice as small free spectral range as a single disc laser.

Published
2018
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46. Intersubband polaritons at λ ∼ 2 μ m in the InAs/AlSb system

Author

L. Le Gratiet, Raffaele Colombelli, Jean-Michel Manceau, Adel Bousseksou, T. Laurent, Roland Teissier, Alexei N. Baranov, Pierre Laffaille, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, [PHYS]Physics [physics], Physics and Astronomy (miscellaneous), business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 0103 physical sciences, Polariton, Optoelectronics, 010306 general physics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018
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47. Optical detection and spatial modulation of mid‐infrared surface plasmon polaritons in a highly doped semiconductor

Author

A. V. Velichko, Laurent Cerutti, Davide Maria Di Paola, M. Bomers, Alexei N. Baranov, Manoj Kesaria, Nilanthy Balakrishnan, Anthony Krier, Oleg Makarovsky, Mario Capizzi, Thierry Taliercio, Amalia Patanè, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, 02 engineering and technology, semiconductors, 01 natural sciences, plasmonics, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Polariton, 010306 general physics, Plasmon, QC, business.industry, Doping, mid-infrared, 021001 nanoscience & nanotechnology, Laser, Surface plasmon polariton, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Semiconductor, chemistry, Attenuated total reflection, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Indium arsenide, hydrogenation, 0210 nano-technology, business, polaritons
Abstract

Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Postgrowth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photoannealing of the semiconductor is attributed to the dissociation of the N-H bond. This offers new routes for direct patterning of MIR plasmonic structures by laser writing.

Published
2018
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48. Epitaxial Integration of Antimonide-Based Semiconductor Lasers on Si

Author

Alexei N. Baranov, Laurent Cerutti, Jean-Baptiste Rodriguez, Roland Teissier, Eric Tournié, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-11-EQPX-0016,EXTRA,Centre d'Excellence sur les Antimoniures(2011), ANR-12-BS03-0002,OPTOSI,Intégration par épitaxie de composants optoélectroniques III-V sur Si(2012), and ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, business.industry, Nucleation, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Laser, Epitaxy, 01 natural sciences, Semiconductor laser theory, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Antimonide, Optoelectronics, Continuous wave, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Diode
Abstract

We review the recent achievements in the epitaxial integration of III-Sb-based semiconductor lasers on Si substrates. Much work has been done on substrate preparation and III-Sb on Si nucleation, which allowed demonstrating GaInAsSb/AlGaAsSb quantum-well laser diodes operating in continuous wave above room temperature in the 1.5–2.3 μm range and InAs/AlSb quantum cascade lasers emitting near 11 μm operating up to 400 K. Although work remains to be done, in particular toward crystal defect density reduction, the wide wavelength range at reach with the III-Sb technology opens the way to the development of a large portfolio of mid-IR sensing systems.

Published
2018
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49. Front Matter: Volume 10383

Author

J. M. Zavada, Dimitris Pavlidis, Alexei N. Baranov, and Manijeh Razeghi

Subjects
business.industry, Terahertz radiation, Optoelectronics, business
Published
2017
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50. Tunable terahertz devices using graphene and metallic heterostructures (Conference Presentation)

Author

Hyunsoo Yang, Dimitris Pavlidis, Manijeh Razeghi, Yang Wu, Alexei N. Baranov, and J. M. Zavada

Subjects
Materials science, business.industry, Graphene, Terahertz radiation, Heterojunction, law.invention, Indium tin oxide, Amplitude modulation, law, Optoelectronics, Insertion loss, business, Low voltage, Common emitter
Abstract

Graphene is considered to be a promising candidate to replace indium tin oxide (ITO) as transparent conductive electrodes in optoelectronics applications. We use graphene films as transparent electrodes for THz applications such as phase shifters, reflector, and intensity modulators, leading to a low voltage operation and very small insertion loss. First, we experimentally demonstrate the excellent performance of THz modulators based on graphene/ionic liquid/graphene sandwich structures. The modulation covers a broadband frequency range from 0.1 to 2.5 THz with the modulation depth of up to 99% by applying a small gate voltage of 3 V. To our knowledge, this is the highest modulation ratio from graphene based THz devices to date. We also report a highly efficient tunable THz reflector in graphene. By applying a small gate voltage (up to ± 3 V), the reflectance of graphene is modulated from a minimum of 0.79% to a maximum of 33.4% using graphene/ionic liquid structures at room temperature, and the reflection tuning is uniform within a wide spectral range (0.1 – 1.5 THz). In addition, we design and fabricate terahertz phase shifters based on thin liquid crystal cells sandwiched by two graphene layers. A maximum 10.8 degree phase shift is obtained with 5 V voltage. The proposed phase shifters are fully electrical controllable, continuous tunable, and require very low DC voltages for operation. Finally, we show a high performance THz emitter based on ferromagnetic/nonmagnetic heterostructures. Our THz emitter based on nonmagnetic (NM) and ferromagnetic (FM) heterostructures has a peak intensity exceeding 500 μm thick ZnTe crystals (standard THz emitters). We have also fabricated the devices on flexible substrates with a great performance, and demonstrated that the devices can be driven by low power lasers.

Published
2017
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