Search

Massive Dirac fermions are low-energy electronic excitations characterized by a hyperbolic band dispersion. They play a central role in several emerging physical phenomena such as topological phase transitions, anomalous Hall effects and superconductivity. This work demonstrates that massive Dirac fermions can be controllably induced by lithographically patterning superstructures of nanoscale holes in a graphene device. Their band dispersion is systematically visualized using angle-resolved photoemission spectroscopy with nanoscale spatial resolution. A linear scaling of effective mass with feature sizes is discovered, underlining the Dirac nature of the superstructures. In situ electrostatic doping dramatically enhances the effective hole mass and leads to the direct observation of an electronic band gap that results in a peak-to-peak band separation of (0.64 $\pm$ 0.03) eV, which is shown via first-principles calculations to be strongly renormalized by carrier-induced screening. The presented methodology outlines a new approach for band structure engineering guided by directly viewing structurally- and electrically-tunable massive Dirac quasiparticles in lithographic superstructures at the nanoscale., Comment: 37 pages, 12 figures (includes supporting information). A revised version has been published in ACS Nano

Modification of the electronic structure of quantum matter by ad atom deposition allows for directed fundamental design of electronic and magnetic properties. This concept is utilized in the present work in order to tune the surface electronic structure of magnetic topological insulators based on MnBi2Te4. The topological bands of these systems are typically strongly electron-doped and hybridized with a manifold of surface states that places the salient topological states out of reach of electron transport and practical applications. In this work, micro-focused angle-resolved photoemission spectroscopy (microARPES) provides direct access to the termination-dependent dispersion of MnBi2Te4and MnBi4Te7during in situ deposition of rubidium atoms. The resulting band structure changes are found to be highly complex, encompassing coverage-dependent am-bipolar doping effects, removal of surface state hybridization and the collapse of a surface state band gap. In addition, a doping-dependent band bending is found to give rise to tunable quantum well states. This wide range of observed electronic structure modifications could provide new ways to exploit the topological states and the rich surface electronic structures of manganese bismuthtellurides.

The integration of metallic contacts with two-dimensional (2D) semiconductors is routinely required for the fabrication of nanoscale devices. However, nanometer-scale variations in the 2D/metal interface can drastically alter the local optoelectronic properties. Here, we map local excitonic changes of the 2D semiconductor MoS2 in contact with Au. We utilize a suspended and epitaxially grown 2D/metal platform that allows correlated electron energy-loss spectroscopy (EELS) and angle resolved photoelectron spectroscopy (nanoARPES) mapping. Spatial localization of MoS2 excitons uncovers an additional EELS peak related to the MoS2/Au interface. NanoARPES measurements indicate that Au-S hybridization decreases substantially with distance from the 2D/metal interface, suggesting that the observed EELS peak arises due to dielectric screening of the excitonic Coulomb interaction. Our results suggest that increasing the van der Waals distance could optimize excitonic spectra of mixed-dimensional 2D/3D interfaces and highlight opportunities for Coulomb engineering of exciton energies by the local dielectric environment or moiré engineering.

The bulk band structure of the topological insulator Sb

Funding: We gratefully acknowledge funding from VILLUM FONDEN through the Young Investigator Program (Grant. No.15375) and the Centre of Excellence for Dirac Materials (Grant. No. 11744), the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grant Nos. DFF-9064-00057B and DFF-6108-00409) and the Aarhus University Research Foundation. This work is also supported by National Research Foundation (NRF) grants funded by the Korean government (nos. NRF-2020R1A2C200373211 and 2019K1A3A7A09033389) and by the International MaxPlanck Research School for Chemistry and Physics of Quantum Materials (IMPRS-CPQM). The authors also acknowledge The Royal Society and The Leverhulme Trust. R.S acknowledges financial support provided by the Ministry of Science and Technology in Taiwan under project number MOST-108-2112-M-001-049-MY2 & MOST 109-2124-M-002-001 and Sinica funded i-MATE financial Support AS-iMATE-109-13. Access to the Artemis Facility was funded by STFC. The Advanced Light Source is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

The transition-metal dichalcogenide VSe

The crystal structure, electronic structure, and transport properties of crystals with the nominal composition ${\mathrm{Nb}}_{0.25}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ are investigated. X-ray diffraction reveals that the as-grown crystals display phase segregation and contain major contributions of BiSe and the superconducting misfit layer compound ${(\mathrm{Bi}\mathrm{Se})}_{1.1}\mathrm{Nb}{\mathrm{Se}}_{2}$. The inhomogeneous character of the samples is also reflected in the electronic structure and transport properties of different single crystals. Angle-resolved photoemission spectroscopy (ARPES) reveals an electronic structure that resembles poor-quality ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ with an ill-defined topological surface state. High-quality topological surface states are instead observed when using a highly focused beam size, i.e., nanoARPES. While the superconducting transition temperature is found to vary between 2.5 and 3.5 K, the majority of the bulk single crystals does not exhibit a zero-resistance state suggesting filamentary superconductivity in the materials. Susceptibility measurements of the system together with the temperature dependence of the coherence length extracted from the upper critical field are consistent with conventional BCS superconductivity of a type II superconductor.

The products formed following the photodissociation of UV (200 nm) excited CS

To pinpoint the electronic and structural mechanisms that affect intrinsic and extrinsic performance limits of 2D material devices, it is of critical importance to resolve the electronic properties on the mesoscopic length scale of such devices under operating conditions. Herein, angle‐resolved photoemission spectroscopy with nanoscale spatial resolution (nanoARPES) is used to map the quasiparticle electronic structure of a twisted bilayer graphene device. The dispersion and linewidth of the Dirac cones associated with top and bottom graphene layers are determined as a function of spatial position on the device under both static and operating conditions. The analysis reveals that microscopic rotational domains in the two graphene layers establish a range of twist angles from 9.8° to 12.7°. Application of current and electrostatic gating lead to strong electric fields with peak strengths of 0.75 V/μm at the rotational domain boundaries in the device. These proof‐of‐principle results demonstrate the potential of nanoARPES to link mesoscale structural variations with electronic states in operating device conditions and to disentangle such extrinsic factors from the intrinsic quasiparticle dispersion.

The journal of chemical physics 154(3), 034302 (2021). doi:10.1063/5.0035045, The products formed following the photodissociation of UV (200 nm) excited CS$_2$ are monitored in a time resolved photoelectron spectroscopy experiment using femtosecond XUV (21.5 eV) photons. By spectrally resolving the electrons, we identify separate photoelectron bands related to the CS$_2$ + h�� ��� S($^1$D) + CS and CS$_2$ + h�� ��� S($^3$P) + CS dissociation channels, which show different appearance and rise times. The measurements show that there is no delay in the appearance of the S(1D) product contrary to the results of Horio et al. [J. Chem. Phys. 147, 013932 (2017)]. Analysis of the photoelectron yield associated with the atomic products allows us to obtain a S($^3$P)/S($^1$D) branching ratio and the rate constants associated with dissociation and intersystem crossing rather than the effective lifetime observed through the measurement of excited state populations alone., Published by American Institute of Physics, Melville, NY

Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are influenced during device operation. Here, we use micro-focused angle-resolved photoemission in order to analyze many-body interactions in back-gated graphene supported on hexagonal boron nitride. By extracting the doping-dependent quasiparticle dispersion and self-energy, we observe how these interactions renormalize the Dirac cone and impact the electron mobility of our device. Our results are not only limited to a finite energy range around the Fermi level, as in electron transport measurements, but describe interactions on a much wider energy scale, extending beyond the regime of hot carrier excitations., Comment: 6 pages, 3 figures

A mismatch of atomic registries between single-layer transition metal dichalcogenides (TMDs) in a two-dimensional (2D) van der Waals heterostructure produces a moiré superlattice with a periodic potential, which can be fine-tuned by introducing a twist angle between the materials. This approach is promising both for controlling the interactions between the TMDs and for engineering their electronic band structures, yet direct observation of the changes to the electronic structure introduced with varying twist angle has so far been missing. Here, we probe heterobilayers comprised of single-layer MoS2 and WS2 with twist angles ranging from 2∘ to 20∘ and determine the twist angle-dependent evolution of the electronic band structure using micro-focused angle-resolved photoemission spectroscopy. We find strong interlayer hybridization between MoS2 and WS2 electronic states at the Γ ˉ -point of the Brillouin zone, leading to a shift of the valence band maximum in the heterostructure. Replicas of the hybridized states are observed at the center of twist angle-dependent moiré mini Brillouin zones. We confirm that these replica features arise from the inherent moiré potential by comparing our experimental observations with density functional theory calculations of the superlattice dispersion. Our direct visualization of these features underscores the potential of using twisted heterobilayer semiconductors to engineer hybrid electronic states and superlattices that alter the electronic and optical properties of 2D heterostructures for a wide range of twist angles.

Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits a strongly enhanced CDW transition with a higher transition temperature compared to the bulk in addition to an insulating phase with an anisotropic gap at the Fermi level, causing a suppression of anticipated 2D ferromagnetism in the material. Here, we investigate the interplay of electronic and lattice degrees of freedom that underpin these electronic phases in SL VSe$_2$ using ultrafast pump-probe photoemission spectroscopy. In the insulating state, we observe a light-induced closure of the energy gap on a timescale of 480 fs, which we disentangle from the ensuing hot carrier dynamics. Our work thereby reveals that the phase transition in SL VSe$_2$ is driven by electron-lattice coupling and demonstrates the potential for controlling electronic phases in 2D materials with light., Comment: 23 pages including supplementary information, 3 figures in the main text and 6 figures in the supplemental text

The presence of an electrical transport current in a material is one of the simplest and most important realisations of non-equilibrium physics. The current density breaks the crystalline symmetry and can give rise to dramatic phenomena, such as sliding charge density waves [1], insulator-to-metal transitions [2,3] or gap openings in topologically protected states [4]. Almost nothing is known about how a current influences the electron spectral function, which characterizes most of the solid's electronic, optical and chemical properties. Here we show that angle-resolved photoemission spectroscopy with a nano-scale light spot (nanoARPES) provides not only a wealth of information on local equilibrium properties, but also opens the possibility to access the local non-equilibrium spectral function in the presence of a transport current. Unifying spectroscopic and transport measurements in this way allows non-invasive local measurements of the composition, structure, many-body effects and carrier mobility in the presence of high current densities., Comment: 9 pages, 8 figures

The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue towards engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi energy that cause the emergence of numerous correlated phases, including superconductivity. While the twist angle-dependence of these properties has been explored, direct demonstration of electrostatic control of the superlattice bands over a wide energy range has, so far, been critically missing. This work examines a functional twisted bilayer graphene device using in-operando angle-resolved photoemission with a nano-focused light spot. A twist angle of 12.2$^{\circ}$ is selected such that the superlattice Brillouin zone is sufficiently large to enable identification of van Hove singularities and flat band segments in momentum space. The doping dependence of these features is extracted over an energy range of 0.4 eV, expanding the combinations of twist angle and doping where they can be placed at the Fermi energy and thereby induce new correlated electronic phases in twisted bilayer graphene., Comment: 16 pages, 4 figures. A revised version of the manuscript has been accepted for publication in Advanced Materials

An XUV interferometer composed of two inline high harmonic generation regions is used to characterize different ionized electron quantum paths. We unambiguously observe interference between long and short trajectories, revealing their attosecond-scale relative timing.

We probe the dynamics of dissociating $CS^2$ molecules across the entire reaction pathway upon excitation. Photoelectron spectroscopy measurements using laboratory-generated femtosecond extreme ultraviolet pulses monitor the competing dissociation, internal conversion, and intersystem crossing dynamics. Dissociation occurs either in the initially excited singlet manifold or, via intersystem crossing, in the triplet manifold. Both product channels are monitored and show that, despite being more rapid, the singlet dissociation is the minor product and that triplet state products dominate the final yield. We explain this by a consideration of accurate potential energy curves for both the singlet and triplet states. We propose that rapid internal conversion stabilizes the singlet population dynamically, allowing for singlet-triplet relaxation via intersystem crossing and the efficient formation of spin-forbidden dissociation products on longer timescales. The study demonstrates the importance of measuring the full reaction pathway for defining accurate reaction mechanisms.

Time resolved photoelectron spectroscopy (TRPES) shows exquisite sensitivity to both the electronic and nuclear dynamics of molecules. TRPES is also, in principle, a windowless technique that can provide a measurement for any molecular structure as all states can be ionised. With the advent of high harmonic generation (HHG) sources, this windowless character is beginning to be realised, as pulses of ultrashort duration and sufficient energies to ionise the important reaction intermediates and products are now available. The limited use of HHG sources so far is due to the relatively low flux attainable from most HHG sources. This means experiments have either had to combine the HHG pulse with a strong field pump, or limit their measurements to relatively simple dynamics in diatomic molecules. The use of strong fields in the pump enhances the excitation probability at the expense of selectivity such that the range of dynamics and systems that can be studied is not ideal. Here we present UV pump-XUV probe TRPES experiment that allows for the unambiguous assignment of the full reaction pathway in a polyatomic molecule. The experiments measure the dissociation dynamics of CS 2 following UV excitation through to the formation of multiple dissociation products.