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28. Water Savings in Places of Worship: A Case Study for St Mary's Mosque in Australia.

Author

Hurayra, Mohammad Abu, Ahmed, Ali, Alim, Mohammad A., and Rahman, Ataur

Abstract

Water is used for various religious purposes, including ablution for billions of Muslims around the world. Water savings in ablution can make a positive contribution towards achieving the water-related sustainable development goals (SDGs). A survey-based study was conducted at St Mary's Mosque in Sydney, Australia, to understand the water usage during ablution and how water can be saved by Muslims in mosques. It has been found that the participants of the survey use 4 to 8 L of water to perform one ablution. About 82% of the participants are careful about saving water in ablution. It has also been found that about 70% of the participants believe that wastage of water during ablution is 'haram' (unlawful). Some 95% of the participants believe that religious motivation can play a significant role in saving water during ablution, and Imams can make a notable positive difference by encouraging their followers to save water during ablution. It has also been found that 64% of the participants are willing to use harvested rainwater for ablution. The findings of this study will help Muslims in Australia and around the globe to save water and contribute to the circular economy, as saving potable water (by reducing water use during ablution and using harvested rainwater at the source of water collection) saves energy and encourages responsible consumption. [ABSTRACT FROM AUTHOR]

Published
2024
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29. Comprehensive characterization of a high‐performance double heterojunction InGaAs pHEMT for linear power‐efficient amplifiers applications.

Author

Sultana, Sadia, Naima, Jannatul, Alam, Md. Shamsul, Alam, Md. Shah, Crupi, Giovanni, and Alim, Mohammad A.

Abstract

This article centers its attention on the phenomenon of electrostatics, linearity, analogue, and RF performance of a 0.5 μm × (2 × 100) μm double heterojunction AlGaAs/InGaAs/GaAs pHEMT using on‐wafer DC and RF measurements up to 50 GHz. With a high ION/IOFF ratio (1.21 × 107) and low subthreshold slope (72.7 mV/dec), a flat and high transconductance over a wide range of Vgs has been achieved for the tested device. Furthermore, the input intercept and higher‐order voltage intercept point both attained large values with low intermodulation and harmonic distortion. Regarding RF parameters, the intrinsic gain has been achieved up to 28 dB. The GBW up to 750 GHz was attained, with the highest fT and fmax values being 24.5 GHz and 99.3 GHz, respectively. Since the device has very low intrinsic capacitance, parameters like TFP, GFP, and GTFP also showed excellent results. The high intrinsic gain and TGF indicate ample potential of the device for use as an amplifier. Investigating the parameters reveals the device to have very good linearity and amplifying capability. [ABSTRACT FROM AUTHOR]

Published
2024
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45. Thermal characterisation of GaN HEMTs grown on SiC substrate for high frequency applications

Author

Alim, Mohammad Abdul

Subjects
621.3815, Temperature coefficients, Two-tone intermodulation distortion, GaN/SiC HEMTs, Thermal Characterisation, DC and RF
Abstract

The DC, RF, noise and nonlinearity performance of the AlGaN/GaN high electron mobility transistor (HEMT) with a 150 nm and 250 nm gate length on a SiC substrate over a temperature range of - 40 to 150°C including experimental characterisation, modelling and analysis for high frequency application have been investigated. All the DC, small signal parameter and noise parameter variations with ambient temperature on the same set of devices have been reported for the first time using on-wafer measurements up to 50 GHz. The temperature coefficient of all the DC, small signal parameters as well as ft and fmax including noise parameters are reported. Some of the extracted equivalent circuit parameters with the theoretical data of the evolution of electrical parameters and the relevant physical equations involved have been compared using the same biasing condition for further accuracy. The theoretical results are shown to be consistent with the extracted data. Some results are also experimentally verified with previous works. Anomaly and defects characterisation such as kink effect, threshold voltage shifts with temperature are also presented using I-V and the published data. To examine the performance of the nonlinearity in terms of multi biasing, input power, frequency, and temperature of these devices, the analysis of two-tone intermodulation distortion (IMD) is employed. A temperature-dependent analytical model taking into account of multi bias, input power and frequency for the nonlinearity of the device has been developed. The modelled data are consistent with the two-tone IMD measurements providing an effective means for analyzing these devices. The overall results are important in meeting the circuit design specifications‟ challenges over a wide range of temperature and frequency.

Published
2016

49. Measurement based study of microwave double channel pHEMT device.

Author

Alim, Mohammad A and Ali, Mayahsa M.

Subjects
*MICROWAVE devices, *PRESSURE measurement, *MEASUREMENT
Abstract

The paper presents the measurement study of a double channel pHEMT device. Its focus is on examining impacts of several parameters including probe pitch size, position and the applied pressure on the measurements. The impact of probe pitch size, position and applying suitable amount of pressure and more pressure than required on the measuring perspective of a double channel pHEMT was investigated. As noted from the collected data, these impacts are most likely related to the stability factor, current gain and maximum available gain of the studied microwave device. The measurement was done using two probes with pitch sizes of 200 µm and 150 µm, and the probes were placed in the middle of the device's contact pads while exerting appropriate pressure. For double channel pHEMT on wafer, the outcome can be deemed similar for both pitch sizes. On the other hand, the probe with pitch size of 200 µm is utilised for applying more pressure than required where the probe occupied the entire pads of the device and the findings are skewed. Finally, it was found that the RF measurement is frequently affected by these conditions while the DC measurements are unaffected or have a minor effect. [ABSTRACT FROM AUTHOR]

Published
2024
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