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In ferromagnetic (FM) metal/organic semiconductor (OSC) heterostructures charge transfer can occur which leads to induction of magnetism in the non-magnetic OSC. This phenomenon has been described by the change in the density of states in the OSC which leads to a finite magnetic moment at the OSC interface and it is called the ‘spinterface’. One of the main motivations in this field of organic spintronics is how to control the magnetic moment in the spinterface. In this regard, there are several open questions such as (i) which combination of FM and OSC can lead to more moment at the spinterface? (ii) Is the thickness of OSC also important? (iii) How does the spinterface moment vary with the FM thickness? (iv) Does the crystalline quality of the FM matter? (v) What is the effect of spinterface on magnetization reversal, domain structure and anisotropy? In this context, we have tried to answer the last four issues in this paper by studying Fe/C60 bilayers of variable Fe thickness deposited on Si substrates. We find that both the induced moment and thickness of the spinterface vary proportionally with the Fe thickness. Such behavior is explained in terms of the growth quality of the Fe layer on the native oxide of the Si (100) substrate. The magnetization reversal, domain structure and anisotropy of these bilayer samples were studied and compared with their respective reference samples without the C60 layer. It is observed that the formation of spinterface leads to a reduction in uniaxial anisotropy in Fe/C60 on Si (100) in comparison to their reference samples.

et al., The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µm wide) and Co-CoO (2.4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au-sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O-implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring-magnet-type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co-CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications., This work was financed by the Research Foundation-Flanders (FWO), the Concerted Research ActionGOA/14/007, the 2014-SGR-1015 project of the Generalitat de Catalunya, and the European Commission under the 7th Framework Programme through the “Research Infrastructure” action of the “Capacities” Programme, NMI3-II Grant No. 283883. This work is based upon experiments (Proposal Nos. 5928 and 9384) performed at the MARIA instrument operated by JCNS at Heinz Maier-Leibnitz Zentrum (MLZ), Garching, Germany. The authors would like to thank IMEC for access to its lithography facilities as well as J. Moonens and J. Loo for technical support. ICN2 acknowledges support from the Severo Ochoa Program (MINECO, Grant SEV-2013-0295).