24 results on '"Amoroso, Salvatore M."'
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2. Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit
3. TCAD-Based Design Technology Co-optimization for Variability in Nanoscale SOI FinFETs
4. Investigation of Random Telegraph Noise Under Different Programmed Cell Vt Levels in Charge Trap Based 3D NAND Flash
5. Comprehensive numerical simulation of threshold-voltage transients in nitride memories
6. Investigation of Random Telegraph Noise Under Different Programmed Cell V t Levels in Charge Trap Based 3D NAND Flash.
7. A Multiscale Statistical Evaluation of DRAM Variable Retention Time
8. Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels
9. Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology
10. Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels
11. Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs
12. Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow
13. Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETs
14. Experimental evidences and simulations of trap generation along a percolation path
15. Investigation of performance limiting factors of sub-10nm III-V FinFETs
16. FDSOI molecular flash cell with reduced variability for low power flash applications
17. Progress in the simulation of time dependent statistical variability in nano CMOS transistors
18. Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETs.
19. Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State
20. Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs
21. Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D ‘atomistic’ simulation
22. Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories
23. Reliability constraints for TANOS memories due to alumina trapping and leakage
24. Modelling of reliability of nanoscale MOSFETs within the discrete charge trapping paradigm.
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