39 results on '"Amoroso, Salvatore Maria"'
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2. Statistical Study of Bias Temperature Instabilities by Means of 3D 'Atomistic' Simulation
3. RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
4. Simulation-based DRAM Design Technology Co-Optimization: Why Random Dopant Fluctuations Matter
5. From atoms to product reliability: toward a generalized multiscale simulation approach
6. Statistical Study of Bias Temperature Instabilities by Means of 3D “Atomistic” Simulation
7. High-sigma analysis of DRAM write and retention performance: a TCAD-to-SPICE approach
8. Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors
9. Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs
10. Charge retention phenomena in charge transfer silicon nitride: impact of technology and operating conditions
11. A Mobility Correction Approach for Overcoming Artifacts in Atomistic Drift-Diffusion Simulation of Nano-MOSFETs
12. Comparison Between Bulk and FDSOI POM Flash Cell: A Multiscale Simulation Study
13. Inverse Scaling Trends for Charge-Trapping-Induced Degradation of FinFETs Performance
14. Performance and Variability of Doped Multithreshold FinFETs for 10-nm CMOS
15. Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations
16. Time-Dependent 3-D Statistical KMC Simulation of Reliability in Nanoscale MOSFETs
17. Metamorphosis of a nano wire: A 3-D coupled mode space NEGF study
18. Modeling Carrier Mobility in Nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues
19. 3-D Statistical Simulation Comparison of Oxide Reliability of Planar MOSFETs and FinFET
20. 3D TCAD statistical analysis of transient charging in BTI degradation of nanoscale MOSFETs
21. Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs.
22. Statistical Interactions of Multiple Oxide Traps Under BTI Stress of Nanoscale MOSFETs
23. Impact of Cell Shape on Random Telegraph Noise in Decananometer Flash Memories
24. Statistical Study of Bias Temperature Instabilities by Means of 3D ˵Atomistic″ Simulation.
25. 3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices
26. Impact of Nonuniform Doping on Random Telegraph Noise in Flash Memory Devices
27. Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap Memories
28. Three-Dimensional Simulation of Charge-Trap Memory Programming—Part II: Variability
29. Three-Dimensional Simulation of Charge-Trap Memory Programming—Part I: Average Behavior
30. Impact of Neutral Threshold-Voltage Spread and Electron-Emission Statistics on Data Retention of Nanoscale nand Flash
31. Comprehensive Investigation of Statistical Effects in Nitride Memories—Part II: Scaling Analysis and Impact on Device Performance
32. Comprehensive Investigation of Statistical Effects in Nitride Memories—Part I: Physics-Based Modeling
33. Physical Modeling for Programming of TANOS Memories in the Fowler–Nordheim Regime
34. Accurate Simulation of Transistor-Level Variability for the Purposes of TCAD-Based Device-Technology Cooptimization.
35. Variability Aware Simulation Based Design- Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM Cooptimization.
36. Problems With the Continuous Doping TCAD Simulations of Decananometer CMOS Transistors.
37. Quantum-Mechanical Charge Distribution in Cylindrical Gate-All-Around MOS Devices.
38. Physical Modeling for Programming of TANOS Memories in the Fowler-Nordheim Regime.
39. Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories.
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