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Abstract The study demonstrates HfZrOx (HZO)‐based Si ferroelectric field‐effect transistors (FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation (100 ns) via HZO thickness scaling, electron‐beam‐irradiation (EBI) treatment, and interfacial layer (IL) scavenging. With these three strategies, reduced operating voltage, immediate read‐after‐write capability, and improved endurance (>108 cycles) and retention (extrapolated 10‐year) characteristics are achieved in FeFETs. The improved characteristics of FeFETs are attributed to the reduced operating voltage by HZO thickness scaling, the ferroelectric orthorhombic phase‐oriented crystallization by EBI treatment, and the reduced gate voltage drop across the IL and reduced depolarization field by the IL scavenging. It is believed that this work contributes to the development of low‐power and fast‐read FeFETs.

Arugula (Eruca sativa Mill.) is a nutritious vegetable, commonly used in salads, known for its high glucosinolate content and various health benefits and flavors. However, arugulas may contain -excessive nitrate levels, potentially harmful to human health. We aimed to examine the effect of substrate moisture levels on the growth and quality of arugula under controlled irrigation conditions to investigate a proper irrigation practice for the quality production of arugula. The plants were cultivated using a sensor-based automated irrigation system to maintain the substrate volumetric water content (VWC) levels at 0.20, 0.30, 0.40, and 0.50 m3·m−3 over three weeks (vegetative stage). The treatment with VWC of 0.20 m3·m−3 resulted in reduced shoot growth, primarily attributed to drought-induced constraints on leaf expansion. Despite the initial reductions in stomatal conductance in arugulas subjected to lower VWC treatments, they eventually recovered and exhibited similar stomatal conductance levels across all VWC treatments 15 days after treatment, indicating acclimation to drought stress. The VWC treatment did not affect the nitrate and total glucosinolate contents of arugula, except for a decrease in glucoerucin content observed in the lowest VWC treatment. Maintaining a VWC level at 0.20 m3·m−3 could impair both the growth and quality of arugula due to severe drought conditions. Alternatively, maintaining the VWC at 0.30 m3·m−3 would ensure a high water use efficiency while securing the growth and quality of arugula.

Abstract The authors demonstrate improved switching voltage, retention, and endurance properties in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen scavenging. Oxygen scavenging using titanium (Ti) in the gate stack successfully reduce the thickness of interfacial oxide between HZO and Si and the oxygen vacancy at the bottom interface of the HZO film. The n/p‐FeFETs with scavenging exhibit an immediate read‐after‐write with stable retention property and improved endurance property. In particular, n‐FeFET with scavenging exhibits excellent endurance property that does not show breakdown up to 1010 cycles. The charge trapping model in the n/p‐FeFETs is presented to explain why the effect of oxygen scavenging is more pronounced in n‐FeFET than in p‐FeFET. Finally, further switching voltage scaling potential is estimated by scavenging and HZO thickness scaling. It is believed that this work contributes to the development of low‐power FeFET and the understanding of FeFET operation.

Purpose The aim of this study was to identify factors influencing the learning transfer of nursing students in a non-face-to-face educational environment through structural equation modeling and suggest ways to improve the transfer of learning. Methods In this cross-sectional study, data were collected via online surveys from February 9 to March 1, 2022, from 218 nursing students in Korea. Learning transfer, learning immersion, learning satisfaction, learning efficacy, self-directed learning ability and information technology utilization ability were analyzed using IBM SPSS for Windows ver. 22.0 and AMOS ver. 22.0. Results The assessment of structural equation modeling showed adequate model fit, with normed χ2=1.74 (P

Far-red light (FR; wavelength: 700–800 nm) is known for its effects on plant morphology and photosynthesis. However, its effects on stomatal responses and transpiration are not well understood. This study investigated the effects of FR on stomatal development and evapotranspiration in sweet basil grown under red, blue, and green (RGB) light-emitting diodes (LED). FR was provided for 10 days at 0, 30, 100, and 130 μmol·m−2·s−1 with the same base light (RGB ratio of 6:2:2; a photosynthetic photon flux density of 200 μmol·m−2·s−1). Evapotranspiration was measured using a load cell, and stomatal development was monitored microscopically. FR increased the height of sweet basil mostly due to the shade avoidance syndrome. The photosynthetic rate was not improved with FR, probably due to insufficient base light intensity. Despite similar leaf area and root growth, daily evapotranspiration increased with FR, resulting in higher water use. Although the stomatal density and guard cell area were similar across treatments, the stomatal aperture area was larger in plants with FR, thus increasing evapotranspiration. In conclusion, FR with the base RGB light intensity of 200 μmol·m−2·s−1 enhanced the evapotranspiration of sweet basil by regulating stomatal opening, but it did not enhance photosynthesis.

In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates the junction leakage. We also suppressed the interface trap-assisted surface leakage current by introducing In0.53Ga0.47As surface passivation on the GaSb channel. Furthermore, GaSb/InGaSb/GaSb quantum well (QW) channel structure provided significant improvement in effective mobility ( ${\mu }_{\mathrm{ eff}}$ ) characteristics. As a result, the fabricated devices showed the lowest off-leakage current ( ${I} _{\mathrm{ off}}$ ), subthreshold slope ( ${S}$ . ${S}$ .) and high $\mu _{\mathrm{ eff}}$ among reported GaSb p-MOSFETs.

Providing proper moisture conditions is critical for successful cutting propagation. This study aimed to investigate the optimal substrate moisture level for enhancing the survival and rooting rates of Lavandula angustifolia cuttings. Apical cuttings of L. angustifolia were propagated under four irrigation thresholds (−1.0, −2.5, −5.0, and −10.0 kPa) over six weeks. At the final harvest, cuttings grown at −2.5 kPa demonstrated the highest survival rate (83.3%), and those grown at −10.0 kPa demonstrated a mortality > 50%. A high rooting percentage (53.0 and 47.2%) was observed in cuttings grown at −1.0 and −2.5 kPa, while the lowest rooting percentage (