24 results on '"Anda, Yoshiharu"'
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2. Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors
3. Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment
4. SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors
5. Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties
6. Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth
7. Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures
8. A1W power consumption GaN-based isolated gate driver for a 1.0 MHz GaN power system
9. Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient
10. A Low-Impedance Coplanar Waveguide Using an Sr[TiO.sub.3] Thin Film for GaAs Power MMIC's
11. A Novel Thin Concentrator Photovoltaic With Microsolar Cells Directly Attached to a Lens Array
12. High-efficiency thin and compact concentrator photovoltaics using micro-solar cells with via-holes sandwiched between thin lens-array and circuit board
13. High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors
14. GaN Gate Injection Transistor with integrated Si Schottky barrier diode for highly efficient DC-DC converters
15. 200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates
16. K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10W
17. GaN-based multi-junction diode with low reverse leakage current using P-type barrier controlling layer
18. 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors
19. Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates
20. Recent Advances in GaN Power Switching Devices
21. Novel fabrication technique for 0.1 μm T-shaped gate with i-line negative resist and poly(methylmethacrylate)
22. Hall Effect Measurement and Band Bending Calculation of Hydrogenated Diamond Film Grown by Chemical Vapor Deposition
23. Quantum Analysis of Hole Distribution in Multiple-Delta-Doped Diamond with a Deep Impurity Level
24. GaN-based multi-junction diode with low reverse leakage current using P-type barrier controlling layer.
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