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Observations of dissolved iron (dFe) in the subtropical North Atlantic revealed remarkable features: While the near-surface dFe concentration is low despite receiving high dust deposition, the subsurface dFe concentration is high. We test several hypotheses that might explain this feature in an ocean biogeochemistry model with a refined Fe cycling scheme. These hypotheses invoke a stronger lithogenic scavenging rate, rapid biological uptake, and a weaker binding between Fe and a ubiquitous, refractory ligand. While the standard model overestimates the surface dFe concentration, a 10-time stronger biological uptake run causes a slight reduction in the model surface dFe. A tenfold decrease in the binding strength of the refractory ligand, suggested by recent observations, starts reproducing the observed dFe pattern, with a potential impact for the global nutrient distribution. An extreme value for the lithogenic scavenging rate can also match the model dFe with observations, but this process is still poorly constrained.

Recent GEOTRACES transects revealed basin-scale patterns of dissolved iron in the global oceans, providing a unique opportunity to test numerical models and to improve our understanding of the iron cycling. Subsurface maxima of dissolved iron in the upper ocean thermocline are observed in various transects, which can play an important role in regulating marine productivity due to their proximity to the surface euphotic layer. An ocean biogeochemistry model with refined parameterizations of iron cycling is used to examine the mechanisms controlling the formation and maintenance of these subsurface maxima. The model includes the representation of three iron sources including dust deposition, continental shelves, and hydrothermal vents. Two classes of organic ligands are parameterized based on the dissolved organic matter and apparent oxygen utilization. Parameterizations of particle-dependent scavenging and desorption are included. Although the model still struggles in fully capturing the observed dissolved iron distribution, it starts reproducing some major features, especially in the main thermocline. A suite of numerical sensitivity experiments suggests that the release of scavenged iron associated with sinking organic particles forms the subsurface-dissolved iron maxima in high-dust regions of the Indian and Atlantic Oceans. In low-dust regions of the Pacific basin, the subsurface-dissolved iron extrema are sustained by inputs from the continental shelves or hydrothermal vents. In all cases, subsurface ligands produced by the remineralization of organic particles retain the dissolved iron and play a central role in the maintenance of the subsurface maxima in our model. Thus, the parameterization of subsurface ligands has a far-reaching impact on the representation of global iron cycling and biological productivity in ocean biogeochemistry models.

Adipose tissue (AT) metabolism involves coordinating various cells and cellular processes to regulate energy storage, release, and overall metabolic homeostasis. Therein, macrophage and its cytokine are important in controlling tissue homeostasis. Among cytokines, the role of transforming growth factor-β1 (Tgf-β1), a cytokine abundantly expressed in CD206 + M2-like macrophage and correlated with the expansion of AT and fibrosis, in AT metabolism, remains unknown. We used CD206CreER T2 ; Tgf-β1 f/f mouse model in which the Tgf-β1 gene was conditionally deleted in CD206 + M2-like macrophages followed by tamoxifen administration, to investigate the role of the Tgf-β1 gene in glucose and insulin metabolism. Our data demonstrated that lack of CD206 + M2-like macrophages derived Tgf-β1 gene improved glucose metabolism and insulin sensitivity by enhancing adipogenesis via hyperplasia. The Tgf-β1 gene, specifically from CD206 + M2-like macrophages, deletion stimulated APs' proliferation and differentiation, leading to the generation of smaller mature adipocytes, therefore enhancing insulin sensitivity and improving glucose metabolism under normal chow conditions. Our study brings a new perspective that Tgf-β1 gene deletion specific from CD206 + M2-like macrophage promotes adipocyte hyperplasia, improving glucose homeostasis and insulin sensitivity in the lean state., Competing Interests: Competing interests: The authors declare no competing interests. Ethical approval: All procedures were conducted in accordance with ARRIVE guidelines. All experiments and procedures were performed in accordance with the relevant guidelines and regulations and were approved by the Animal Care Committee of the University of Toyama (Approved number A2023MED-16)., (© 2025. The Author(s).)

High-quality superconductor/topological material heterostructures are highly desired for realisation of topological superconductivity and Majorana physics. Here, we demonstrate a method to directly draw nanoscale superconducting β-Sn patterns in the plane of a topological Dirac semimetal (TDS) α-Sn thin film by irradiating a focused ion beam and taking advantage of the heat-driven phase transition of α-Sn into superconducting β-Sn. The β-Sn nanowires embedded in a TDS α-Sn thin film exhibit a large superconducting diode effect (SDE), whose rectification ratio η reaches a maximum of 35% when the magnetic field is applied parallel to the current. The results suggest that the SDE may occur at the α-Sn/β-Sn interfaces where the TDS α-Sn becomes superconducting by a proximity effect. Our work thus provides a universal platform for investigating quantum physics and devices based on topological superconducting circuits of any shape., (© 2024. The Author(s).)

Exploring potential spintronic functionalities in resistive switching (RS) devices is of great interest for creating new applications, such as multifunctional resistive random-access memory and novel neuromorphic computing devices. In particular, the importance of the spin-triplet state of cation vacancies in oxide materials, which is induced by localized and strong O-2p on-site Coulomb interactions, in RS devices has been overlooked. d 0 ferromagnetism sometimes appears due to the spin-triplet state and ferromagnetic Zener's double exchange interactions between cation vacancies, which are occasionally strong enough to make nonmagnetic oxides ferromagnetic. Here, for the first time, anomalous and colossal magneto-RS (CMRS) with very high magnetic field dependence is demonstrated by utilizing an unconventional RS device composed of a Ge nanochannel with all-epitaxial single-crystalline Fe/MgO electrodes. The device shows colossal and unusual behavior as the threshold voltage and ON/OFF ratio strongly depend on a magnetic field, which is controllable with an applied voltage. This new phenomenon is attributed to the formation of d 0 -ferromagnetic filaments by attractive Mg vacancies due to the spin-triplet states with ferromagnetic double exchange interactions and the ferromagnetic proximity effect of Fe on MgO. The findings will allow the development of energy-efficient CMRS devices with multifield susceptibility., (© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.)

Strong spin-charge interactions in several ferromagnets are expected to lead to subpicosecond (sub-ps) magnetization of the magnetic materials through control of the carrier characteristics via electrical means, which is essential for ultrafast spin-based electronic devices. Thus far, ultrafast control of magnetization has been realized by optically pumping a large number of carriers into the d or f orbitals of a ferromagnet; however, it is extremely challenging to implement by electrical gating. This work demonstrates a new method for sub-ps magnetization manipulation called wavefunction engineering, in which only the spatial distribution (wavefunction) of s (or p) electrons is controlled and no change is required in the total carrier density. Using a ferromagnetic semiconductor (FMS) (In,Fe)As quantum well (QW), instant enhancement, as fast as 600 fs, of the magnetization is observed upon irradiating a femtosecond (fs) laser pulse. Theoretical analysis shows that the instant enhancement of the magnetization is induced when the 2D electron wavefunctions (WFs) in the FMS QW are rapidly moved by a photo-Dember electric field formed by an asymmetric distribution of the photocarriers. Because this WF engineering method can be equivalently implemented by applying a gate electric field, these results open a new way to realize ultrafast magnetic storage and spin-based information processing in present electronic systems., (© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.)

Developing technology to realize oxide-based nanoscale planar integrated circuits is in high demand for next-generation multifunctional electronics. Oxide circuits can have a variety of unique functions, including ferromagnetism, ferroelectricity, multiferroicity, superconductivity, and mechanical flexibility. In particular, for spin-transistor applications, the wide tunability of the physical properties due to the presence of multiple oxide phases is valuable for precise conductivity matching between the channel and ferromagnetic electrodes. This feature is essential for realistic spin-transistor operations. Here, a substantially large magnetoresistance (MR) ratio of up to ≈140% is demonstrated for planar-type (La,Sr)MnO 3 (LSMO)-based spin-valve devices. This MR ratio is 10-100 times larger than the best values obtained for semiconductor-based planar devices, which have been studied over the past three decades. This structure is prepared by implementing an artificial nanolength Mott-insulator barrier region using the phase transition of metallic LSMO. The barrier height of the Mott-insulator region is only 55 meV, which enables the large MR ratio. Furthermore, a successful current modulation, which is a fundamental functionality for spin transistors, is shown. These results open up a new avenue for realizing oxide planar circuits with unique functionalities that conventional semiconductors cannot achieve., (© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.)

Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a BiSb/(Ga,Fe)Sb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (T C ) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we detected spin injection from (Ga,Fe)Sb by utilizing the large inverse spin Hall effect (ISHE) in BiSb. Our study provides the first demonstration of spin injection at room temperature from a FMS., (© 2023. The Author(s).)

According to Onsager's principle, electrical resistance R of general conductors behaves as an even function of external magnetic field B. Only in special circumstances, which involve time reversal symmetry (TRS) broken by ferromagnetism, the odd component of R against B is observed. This unusual phenomenon, called odd-parity magnetoresistance (OMR), was hitherto subtle (< 2%) and hard to control by external means. Here, we report a giant OMR as large as 27% in edge transport channels of an InAs quantum well, which is magnetized by a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sb layer. Combining experimental results and theoretical analysis using the linearized Boltzmann's equation, we found that simultaneous breaking of both the TRS by the magnetic proximity effect (MPE) and spatial inversion symmetry (SIS) in the one-dimensional (1D) InAs edge channels is the origin of this giant OMR. We also demonstrated the ability to turn on and off the OMR using electrical gating of either TRS or SIS in the edge channels. These findings provide a deep insight into the 1D semiconducting system with a strong magnetic coupling., (© 2022. The Author(s).)

The two-dimensional electron gas (2DEG) formed at interfaces between SrTiO 3 (STO) and other oxide insulating layers is promising for use in efficient spin-charge conversion due to the large Rashba spin-orbit interaction (RSOI). However, these insulating layers on STO prevent the propagation of a spin current injected from an adjacent ferromagnetic layer. Moreover, the mechanism of the spin-current flow in these insulating layers is still unexplored. Here, using a strongly correlated polar-metal LaTiO 3+δ (LTO) interlayer and the 2DEG formed at the LTO/STO interface in an all-epitaxial heterostructure, we demonstrate giant spin-to-charge current conversion efficiencies, up to ~190 nm, using spin-pumping ferromagnetic-resonance voltage measurements. This value is the highest among those reported for all materials, including spin Hall systems. Our results suggest that the strong on-site Coulomb repulsion in LTO and the giant RSOI of LTO/STO may be the key to efficient spin-charge conversion with suppressed spin-flip scattering. Our findings highlight the hidden inherent possibilities of oxide interfaces for spin-orbitronics applications., (© 2022. The Author(s).)

We developed a simple methodology to fabricate an Ni/NiO x -based flexible breath sensor by a single-step laser digital patterning process of solution-processed NiO x thin-film deposited using NiO x nanoparticle ink. Laser-induced reductive sintering phenomenon enables for the generation of three parts of Ni electrodes and two narrow NiO x -sensing channels in between, defined on a single layer on a thin flexible polymer substrate. The Ni/NiO x -based breath sensor efficiently detects human breath at a relatively low operating temperature (50 °C) with fast response/recovery times (1.4 s/1.7 s) and excellent repeatability. The mechanism of the gas-sensing ability enhancement of the sensor was investigated by X-ray photoelectron spectroscopy analysis. Furthermore, by decoupling of the temperature effect from the breathing gas, the response of the sensor due to the temperature alone and due to the chemical components in the breathing gas could be separately evaluated. Finally, bending and cyclic bending tests (10,000 cycles) demonstrated the superior mechanical stability of the flexible breath sensor.

α-Sn provides an ideal avenue to investigate novel topological properties owing to its rich diagram of topological phases and simple elemental material structure. Thus far, however, the realization of high-quality α-Sn remains a challenge, which limits the understanding of its quantum transport properties and device applications. Here, epitaxial growth of α-Sn on InSb (001) with the highest quality thus far is presented. The studied samples exhibit unprecedentedly high quantum mobilities of both the surface state (30 000 cm 2 V -1 s -1 ), which is ten times higher than the previously reported values, and the bulk heavy-hole state (1800 cm 2 V -1 s -1 ), which is never obtained experimentally. These excellent features allow quantitative characterization of the nontrivial interfacial and bulk band structure of α-Sn via a thorough investigation of Shubnikov-de Haas oscillations combined with first-principles calculations. The results firmly identify that α-Sn grown on InSb (001) is a topological Dirac semimetal (TDS). Furthermore, a crossover from the TDS to a 2D topological insulator and a subsequent phase transition to a trivial insulator when varying the thickness of α-Sn are demonstrated. This work indicates that α-Sn is an excellent model system to study novel topological phases and a prominent material candidate for topological devices., (© 2021 Wiley-VCH GmbH.)

Material structures containing tetrahedral FeAs bonds, depending on their density and geometrical distribution, can host several competing quantum ground states ranging from superconductivity to ferromagnetism. Here we examine structures of quasi two-dimensional (2D) layers of tetrahedral Fe-As bonds embedded with a regular interval in a semiconductor InAs matrix, which resembles the crystal structure of Fe-based superconductors. Contrary to the case of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibit ferromagnetism, whose Curie temperature (T C ) increases rapidly with decreasing the InAs interval thickness t InAs (T C ∝ t InAs -3 ), and an extremely large magnetoresistance up to 500% that is tunable by a gate voltage. Our first principles calculations reveal the important role of disordered positions of Fe atoms in the establishment of ferromagnetism in these quasi-2D FeAs-based SLs. These unique features mark the FeAs/InAs SLs as promising structures for spintronic applications.

Background: The target-based approach to drug discovery currently attracts a great deal of interest from medicinal chemists in anticancer drug discovery and development. Histone deacetylase (HDAC) inhibitors represent an extensive class of targeted anti-cancer agents. Among the most explored structure moieties, hydroxybenzamides and hydroxypropenamides have been demonstrated to have potential HDAC inhibitory effects. Several compounds of these structural classes have been approved for clinical uses to treat different types of cancer, such as vorinostat and belinostat., Aims: This study aims at developing novel HDAC inhibitors bearing conjugated quinazolinone scaffolds with potential cytotoxicity against different cancer cell lines., Methods: A series of novel N-hydroxyheptanamides incorporating conjugated 6-hydroxy-2 methylquinazolin- 4(3H)-ones (15a-l) was designed, synthesized and evaluated for HDAC inhibitory potency as well as cytotoxicity against three human cancer cell lines, including HepG-2, MCF-7 and SKLu-1. Molecular simulations were finally performed to gain more insight into the structureactivity relationships., Results: It was found that among novel conjugated quinazolinone-based hydroxamic acids synthesized, compounds 15a, 15c and 15f were the most potent, both in terms of HDAC inhibition and cytotoxicity. Especially, compound 15f displayed up to nearly 4-fold more potent than SAHA (vorinostat) in terms of cytotoxicity against MCF-7 cell line with IC 50 value of 1.86 μM, and HDAC inhibition with IC 50 value of 6.36 μM. Docking experiments on HDAC2 isozyme showed that these compounds bound to HDAC2 with binding affinities ranging from -10.08 to -14.93 kcal/mol compared to SAHA (-15.84 kcal/mol). It was also found in this research that most of the target compounds seemed to be more cytotoxic toward SKLu-1than MCF-7 and HepG-2., Conclusion: The resesrch results suggest that some hydroxamic acids could emerge for further evaluation and the results are well served as basics for further design of more potent HDAC inhibitors and antitumor agents., (Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.net.)

In continuity of our search for novel anticancer agents acting as procaspase activators, we have designed and synthesised two series of ( E )- N ' - benzylidene-carbohydrazides ( 4a-m ) and (Z)-N' -(2-oxoindolin-3-ylidene)carbohydrazides ( 5a-g ) incorporating 1-(4-chlorobenzyl)-1 H -indole core. Bioevaluation showed that the compounds, especially compounds in series 4a-m , exhibited potent cytotoxicity against three human cancer cell lines (SW620, colon cancer; PC-3, prostate cancer; NCI-H23, lung cancer). Within series 4a-m , compounds with 2-OH substituent ( 4g-i ) exhibited very strong cytotoxicity in three human cancer cell lines assayed with IC 50 values in the range of 0.56-0.83 µM. In particular, two compounds 4d and 4f bearing 4-Cl and 4-NO 2 substituents, respectively, were the most potent in term of cytotoxicity with IC 50 values of 0.011-0.001 µM. In caspase activation assay, compounds 4b and 4f were found to activate caspase activity by 314.3 and 270.7% relative to PAC-1. This investigation has demonstrated the potential of these simple acetohydrazides, especially compounds 4b , 4d , and 4f , as anticancer agents.

We have synthesized 50 benzimidazole (BMZ) derivatives with 1,2-phenylenediamines and aromatic aldehydes under mild oxidation conditions by using inexpensive, nontoxic inorganic salt sodium metabisulfite in a one-pot condensation reaction and screened their ability to interfere with Zika virus (ZIKV) infection utilizing a cell-based phenotypic assay. Seven BMZs inhibited an African ZIKV strain with a selectivity index (SI=CC 50 /EC 50 ) of 9-37. Structure-activity relationship analysis demonstrated that substitution at the C-2, N-1, and C-5 positions of the BMZ ring were important for anti-ZIKV activity. The hybrid structure of BMZ and naphthalene rings was a structural feature responsible for the high anti-ZIKV activity. Importantly, BMZs inhibited ZIKV in human neural stem cells, a physiologically relevant system considering the severe congenital anomalies, like microcephaly, caused by ZIKV infection. Compound 39 displayed the highest antiviral efficacy against the African ZIKV strain in Huh-7 (SI>37) and neural stem cells (SI=12). Compound 35 possessed the highest activity in Vero cells (SI=115). Together, our data indicate that BMZs derivatives have to be considered for the development of ZIKV therapeutic interventions., (© 2020 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Strontium titanate (SrTiO 3 or STO) is important for oxide-based electronics as it serves as a standard substrate for a wide range of high-temperature superconducting cuprates, colossal magnetoresistive manganites, and multiferroics. Moreover, in its heterostructures with different materials, STO exhibits a broad spectrum of important physics such as superconductivity, magnetism, the quantum Hall effect, giant thermoelectric effect, and colossal ionic conductivity, most of which emerge in a two-dimensional (2D) electron gas (2DEG) formed at an STO interface. However, little is known about its counterpart system, a 2D hole gas (2DHG) at the STO interface. Here, a simple way of realizing a 2DHG with an ultrahigh mobility of 24 000 cm 2 V -1 s -1 is demonstrated using an interface between STO and a thin amorphous FeO y layer, made by depositing a sub-nanometer-thick Fe layer on an STO substrate at room temperature. This mobility is the highest among those reported for holes in oxides. The carrier type can be switched from p-type (2DHG) to n-type (2DEG) by controlling the Fe thickness. This unprecedented method of forming a 2DHG at an STO interface provides a pathway to unexplored hole-related physics in this system and enables extremely low-cost and high-speed oxide electronics., (© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

We provide evidence for spin-triplet electron pairing in proximity-induced superconductivity in a ferromagnetic semiconductor (In,Fe)As. As discovered in half-metallic materials, an extraordinarily long proximity range is observed. More surprising is a very strong concentration of supercurrent to the edges of the superconducting region, which is deduced from the extremely persistent oscillation of the critical current vs magnetic field. The maxima of the critical current appear not at the zero magnetic flux but at around the maximum magnetic disorder, reflecting the connectivity between the spin-triplet and singlet pairings. These spin-triplet natures in proximity superconductivity also reveal ferromagnetic properties of (In,Fe)As.

Understanding and controlling the interfacial magnetic properties of ferromagnetic thin films are crucial for spintronic device applications. However, using conventional magnetometry, it is difficult to detect them separately from the bulk properties. Here, by utilizing tunneling anisotropic magnetoresistance in a single-barrier heterostructure composed of La 0.6 Sr 0.4 MnO 3 (LSMO)/LaAlO 3 (LAO)/Nb-doped SrTiO 3 (001), we reveal the presence of a peculiar strong two-fold magnetic anisotropy (MA) along the [110] c direction at the LSMO/LAO interface, which is not observed in bulk LSMO. This MA shows unknown behavior that the easy magnetization axis rotates by 90° at an energy of 0.2 eV below the Fermi level in LSMO. We attribute this phenomenon to the transition between the e g and t 2g bands at the LSMO interface. Our finding and approach to understanding the energy dependence of the MA demonstrate a new possibility of efficient control of the interfacial magnetic properties by controlling the band structures of oxide heterostructures.

Reducing the power consumption necessary for magnetization reversal is one of the most crucial issues facing spintronics devices. Electric field control of the magnetic anisotropy of ferromagnetic thin films is a promising method to solve this problem. However, the electric field is believed to be effective only within several nanometres of the surface in ferromagnetic metals because of its short Thomas-Fermi screening length, which prevents its practical application to devices. Herein, we successfully modulate the magnetic anisotropy of the entire region of the ferromagnetic layers in the elongated mesas of vertical spin field-effect transistors with widths as large as ~500 nm by applying an electric field to the side surface of the metallic GaMnAs-based mesas through an electric double layer. Our results will open up a new pathway for spintronics devices with ultra-low power consumption.

Large spin-splitting in the conduction band and valence band of ferromagnetic semiconductors, predicted by the influential mean-field Zener model and assumed in many spintronic device proposals, has never been observed in the mainstream p-type Mn-doped ferromagnetic semiconductors. Here, using tunnelling spectroscopy in Esaki-diode structures, we report the observation of such a large spontaneous spin-splitting energy (31.7-50 meV) in the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As, which is surprising considering the very weak s-d exchange interaction reported in several zinc-blende type semiconductors. The mean-field Zener model also fails to explain consistently the ferromagnetism and the spin-splitting energy of (In,Fe)As, because we found that the Curie temperature values calculated using the observed spin-splitting energies are much lower than the experimental ones by a factor of 400. These results urge the need for a more sophisticated theory of ferromagnetic semiconductors.

Background: Vietnam is a country blessed with many medicinal plants widely used as food and for medicinal purposes, and they contain a host of active substances that contribute to health. However, the analysis of chemical constituents of these plant species has not been subject of literature discussion., Results: In this study, the chemical compositions of essential oils of four Hedychium species, obtained by hydrodistillation, were determined by means of gas chromatography-flame ionization detector (GC-FID) and gas chromatography-mass spectrometry (GC-MS) techniques. Individually, α-pinene (52.5%) and β-pinene (31.8%) were present in the leaf oil of Hedychium stenopetalum Lodd., while linalool (45.2%), (E)-nerolidol (8.7%) and α-pinene (5.0%) were identified in the root. The leaf of Hedychium coronarium J. König was characterized by β-pinene (20.0%), linalool (15.8%), 1,8-cineole (10.7%), α-pinene (10.1%) and α-terpineol (8.6%); while β-pinene (23.6%), α-humulene (17.1%) and β-caryophyllene (13.0%) were identified in the root. Hedychium flavum Roxb., gave oil whose major compounds were β-pinene (22.5%), α-humulene (15.7%) and β-caryophyllene (10.4%) in the leaf; α-humulene (18.9%), β-caryophyllene (11.8%) and β-pinene (11.2%) in the stem, as well as β-pinene (21.8%), linalool (17.5%) and 1,8-cineole (13.5%) in the root. The main constituents of Hedychium ellipticum Buch.-Ham. ex Smith were (E)-nerolidol (15.9%), β-pinene (11.8%) and bornyl acetate (9.2%) in the leaf with 1,8-cineole (40.8%), α-pinene (18.3%) and β-pinene (11.0%) occurring in the root., Conclusions: Ubiquitous monoterpenes and sesquiterpenes were identified as characteristic markers for Hedychium species. This work is of great importance for the evaluation of Hedychium essential oils grown in Vietnam.