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Polysiloxanes and materials based on them (silicone materials) are of great interest in optoelectronics due to their high flexibility, good film-forming ability, and optical transparency. According to the literature, polysiloxanes are suggested to be very promising in the field of optoelectronics and could be employed in the composition of liquid crystal devices, computer memory drives organic light emitting diodes (OLED), and organic photovoltaic devices, including dye synthesized solar cells (DSSC). Polysiloxanes are also a promising material for novel optoectronic devices, such as LEDs based on arrays of III–V nanowires (NWs). In this review, we analyze the currently existing types of silicone materials and their main properties, which are used in optoelectronic device development.

Photoluminescent lanthanide complexes of Eu3+ and Tb3+ as central atoms and N6,N6’-diisopropyl-[2,2′-bipyridine]-6,6′-dicarboxamide as ligand were synthesized. The structure of these complexes was established by single-crystal X-ray diffraction, mass spectrometry, 1H and 13C nuclear magnetic resonance, ultraviolet-visible, infrared spectroscopy, and thermogravimetry. Bipyridinic ligands provide formation of coordinatively saturated complexes of lanthanide ions and strong photoluminescence (PL). The Eu3+- and Tb3+-complexes exhibit PL emission in the red and green regions observed at a 340 nm excitation. The quantum yield for the complexes was revealed to be 36.5 and 12.6% for Tb3+- and Eu3+-complexes, respectively. These lanthanide compounds could be employed as photoluminescent solid-state compounds and as emitting fillers in polymer (for example, polyethylene glycol) photoluminescent materials.