Search

The relationship between stresses and the orientation of the Néel vector were studied by varying the residual stresses in magnetron sputtered FeMn thin films by adjusting Argon working pressures. Quasistatic magnetization and AC susceptibility measurements reveal that the FeMn film with compressive stress (−27 MPa/−0.015% strain) possesses an out-of-plane Néel vector orientation with a 44 kOe spin-flop field, as contrasted to the FeMn film with tensile stress (25 MPa/0.014% strain) showing an in-plane orientation with a 34 kOe spin-flop field. An energy formulation for the films estimates a magnetostriction value of 109 ppm following an effective anisotropy of −8 kJ/m3. The film with the larger residual stress (77 MPa/0.043% strain) displayed a strain-induced phase transition from γ-FeMn to α-FeMn. These results show the dependency of the Néel vector on the stress state indicative of relatively large magnetostriction.

The magnetoelectric properties of exchange-coupled Ni/CoFeB-based composite multiferroic microstructures are investigated. The strength and sign of the magnetoelastic effect are found to be strongly correlated with the ratio between the thicknesses of two magnetostrictive materials. In cases where the thickness ratio deviates significantly from one, the magnetoelastic behavior of the multiferroic microstructures is dominated by the thicker layer, which contributes more strongly to the observed magnetoelastic effect. More symmetric structures with a thickness ratio equal to one show an emergent interfacial behavior which cannot be accounted for simply by summing up the magnetoelastic effects occurring in the two constituent layers. This aspect is clearly visible in the case of ultrathin bilayers, where the exchange coupling drastically affects the magnetic behavior of the Ni layer, making the Ni/CoFeB bilayer a promising next-generation synthetic magnetic system entirely. This study demonstrates the richness and high tunability of composite multiferroic systems based on coupled magnetic bilayers compared to their single magnetic layer counterparts. Furthermore, because of the compatibility of CoFeB with present magnetic tunnel junction-based spintronic technologies, the reported findings are expected to be of great interest for the development of ultralow-power magnetoelectric memory devices.

We describe a spin wave modulator – spintronic device aimed to control spin wave propagation by an electric field. The modulator consists of a ferromagnetic film serving as a spin wave bus combined with a synthetic multiferroic comprising piezoelectric and magnetostrictive materials. Its operation is based on the stress-mediated coupling between the piezoelectric and magnetostrictive materials. By applying an electric field to the piezoelectric layer, the stress is produced. In turn, the stress changes the direction of the easy axis in the magnetostrictive layer and affects spin wave transport. We present experimental data on a prototype consisting of a piezoelectric [Pb(Mg1/3Nb2/3)O3](1-x) –[PbTiO3]x substrate, and 30 nm layer of magnetostrictive Ni film, where the film is attached to a 30 nm thick Ni81Fe19 spin wave bus. We report spin wave signal modulation in Ni81Fe19 layer by an electric field applied across the piezoelectric layer. The switching between the spin wave conducting and non-conducting states is achieved by applying ±0.3 MV/m electric field. We report over 300% modulation depth detected 80 μm away from the excitation port at room temperature. The demonstration of the spin wave modulator provides a new direction for spin-based device development by utilizing an electric field for spin current control.

Software-defined radio (SDR) requires multi-use or reconfigurable radio-frequency front ends, with filters capable of dynamically shifting their operating frequencies. Current approaches to tunable filters typically require prohibitively large electric fields to achieve large tuning. This study utilizes a multiferroic approach, with an electric field straining magnetoelastic elements to tune the system's magnetic resonance. Furthermore, dipole coupling of the elements yields mode splitting, for additional resonance peaks that depend on element spacing and applied strain. This could lead to innovative types of rf filters for SDR, where communication frequencies are rapidly changing.

As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts, but without the limitation of epitaxial growth and lattice matched substrates. Here, we first report the detection of the average Neel vector orientiation in polycrystalline NiO via spin Hall magnetoresistance (SMR). Secondly, by applying strain through a piezo-electric substrate, we reduce the critical magnetic field required to reach a saturation of the SMR signal, indicating a change of the anisotropy. Our results are consistent with polycrystalline NiO exhibiting a positive sign of the in-plane magnetostriction. This method of anisotropy-tuning offers an energy efficient, on-chip alternative to manipulate a polycrystalline antiferromagnets magnetic state.

Soft x-ray Magnetic Circular Dichroism spectroscopy at the Dy and Tb M 4 , 5 and the Fe L 2 , 3 edges was performed on a sputter deposited polycrystalline Terfenol-D (Tb0.3Dy0.7Fe2) film on sapphire substrates at temperatures from 100 to 300 K to evaluate the elementwise contribution to the magnetocrystalline anisotropy and coercive field. The elemental spin and orbital magnetic moments were calculated using the x-ray Magnetic Circular Dichroism sum rules. As temperatures decreased, the Tb and Fe moments plateau at 200 K with values of 7.6 μB/atom and 1.8 μB/atom, respectively, while the Dy moment increases to 8.9 μB/atom at 100 K. Between 300 and 200 K, the change in magnetic anisotropy is dominated by thermally induced magnetoelastic effects while for temperatures below 200 K magnetocrystalline anisotropy (MCA) changes are dominant. The MCA changes below 200 K appear to be due to increases in the Dy orbital moment with decreasing temperature in this temperature regime.

Strain-coupled composite multiferroics, comprised of magnetostrictive and piezoelectric materials, promise tunable control of magnetism in applications such as rf resonators, sensors, and energy harvesters. Using polarized neutron reflectometry, the authors demonstrate that magnetostrictive and weakly magnetostrictive materials in a multilayer can be strain-coupled to an electric field over large length scales that enable designer functionality across a range of device applications.

The recent push toward THz sensing, transduction, and memory has created a significant need for materials that operate above ferromagnetic resonance frequencies, which are typically in the low GHz range. Antiferromagnetic materials with THz resonances seem promising, but their lack of a net magnetic moment makes manipulating them difficult. Here a fully coupled magnetomechanical model is developed, showing that antiferromagnetic single domains are controllable via strain coupling. The results indicate that near-THz device response is possible with ultralow power consumption.

Periodic Si pillar arrays synthesized by metal assisted chemical etching method exhibit an excellent light harvesting capability, ideal for core-shell structured solar cell applications. To investigate the photovoltaic prospective, a radial heterojunction device is fabricated by conformal coating a layer of Al doped ZnO film on the p-Si pillar array. This core-shell structure has achieved low reflectance (

Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field for breaking lateral symmetry. Here we present a new approach of field-free deterministic perpendicular switching using a strain-mediated SOT switching method. The strain-induced magnetoelastic anisotropy breaks the lateral symmetry, and the resulting symmetry-breaking is controllable. A finite element model and a macrospin model are used to numerically simulate the strain-mediated SOT switching mechanism. The results show that a relatively small voltage (${\pm}0.5$ V) along with a modest current ($3.5 \times 10^{7} A/cm^{2}$) can produce a 180{\deg} perpendicular magnetization reversal. The switching direction (up or down) is dictated by the voltage polarity (positive or negative) applied to the piezoelectric layer in the magnetoelastic/heavy metal/piezoelectric heterostructure. The switching speed can be as fast as 10 GHz. More importantly, this control mechanism can be potentially implemented in a magnetic random-access memory system with small footprint, high endurance and high tunnel magnetoresistance (TMR) readout ratio.

Ferromagnetic resonance and spin waves have been used in miniaturized devices for rf and microwave applications, but large magnetic bias fields are required for the high frequencies at which most satellites operate, for example. Exploiting perpendicular standing spin waves in an innovative way, the authors excite spin-wave resonance at frequencies above 20 GHz with bias fields below 100 Oe, which can be realized with small, lightweight permanent magnets, or electromagnets with current sources that would not require cooling.

Current research on artificial spin ice (ASI) systems has revealed unique hysteretic memory effects and mobile quasi-particle monopoles controlled by externally applied magnetic fields. Here, we numerically demonstrate a strain-mediated multiferroic approach to locally control the ASI monopoles. The magnetization of individual lattice elements is controlled by applying voltage pulses to the piezoelectric layer resulting in strain-induced magnetic precession timed for 180 degree reorientation. The model demonstrates localized voltage control to move the magnetic monopoles across lattice sites, in CoFeB, Ni, and FeGa based ASI$'$s. The switching is achieved at frequencies near ferromagnetic resonance and requires energies below 620 aJ. The results demonstrate that ASI monopoles can be efficiently and locally controlled with a strain-mediated multiferroic approach.

A micromagnetic and elastodynamic finite element model is used to compare the 180° out-of-plane magnetic switching behavior of CoFeB and Terfenol-D nanodots with perpendicular magnetic easy axes. The systems simulated here consist of 50 nm diameter nanodots on top of a 100 nm-thick PZT (Pby[ZrxTi1-x]O3) thin film, which is attached to a Si substrate. This allows voltage pulses to induce strain-mediated magnetic switching in a magnetic field free environment. Coherent and incoherent switching behaviors are observed in both CoFeB and Terfenol nanodots, with incoherent flipping associated with larger or faster applied switching voltages. The energy to flip a Terfenol-D memory element is an ultralow 22 aJ, which is 3–4 orders more efficient than spin-transfer-torque. Consecutive switching is also demonstrated by applying sequential 2.8 V voltage pulses to a CoFeB nanodot system with switching times as low as 0.2 ns.

We simulated the generation and propagation of spin waves (SWs) using two excitation methods, namely, magnetic field and voltage induced strain. A fully coupled non-linear magnetoelastic model, combining Landau–Lifshitz-Gilbert with elastodynamic equations, is used to study the propagation characteristics of SWs in magnetoelastic materials. Simulation results show that for excitation frequencies above ferromagnetic resonance (FMR), SWs excited by voltage induced strain propagate over longer distances compared to SWs excited by magnetic field. In addition, strain mediated SWs exhibit loss characteristics, which are relatively independent of the magnetic losses (Gilbert damping). Moreover, it is also shown that strain induced SWs can also be excited at frequencies below FMR.