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4. The virtual atomic and molecular data centre (VAMDC) consortium

Author

Dubernet, M. L., Antony, B. K., Ba, Y. A., Babikov, Yu L., Bartschat, K., Boudon, V., Braams, B. J., Chung, H-K, Daniel, F., Delahaye, F., Del Zanna, G., de Urquijo, J., Dimitrijevic, M. S., Domaracka, A., Doronin, M., Drouin, B. J., Endres, C. P., Fazliev, A. Z., Gagarin, S. V., Gordon, I. E., Gratier, P., Heiter, Ulrike, Hill, C., Jevremovic, D., Joblin, C., Kasprzak, A., Krishnakumar, E., Leto, G., Loboda, P. A., Louge, T., Maclot, S., Marinkovic, B. P., Markwick, A., Marquart, Thomas, Mason, H. E., Mason, N. J., Mendoza, C., Mihajlov, A. A., Millar, T. J., Moreau, N., Mulas, G., Pakhomov, Yu, Palmeri, P., Pancheshnyi, S., Perevalov, V. I., Piskunov, Nikolai, Postler, J., Quinet, P., Quintas-Sanchez, E., Ralchenko, Yu, Rhee, Y-J, Rixon, G., Rothman, L. S., Roueff, E., Ryabchikova, T., Sahal-Brechot, S., Scheier, P., Schlemmer, S., Schmitt, B., Stempels, Eric H. C., Tashkun, S., Tennyson, J., Tyuterev, Vl G., Vujcic, V., Wakelam, V., Walton, N. A., Zatsarinny, O., Zeippen, C. J., Zwoelf, C. M., Dubernet, M. L., Antony, B. K., Ba, Y. A., Babikov, Yu L., Bartschat, K., Boudon, V., Braams, B. J., Chung, H-K, Daniel, F., Delahaye, F., Del Zanna, G., de Urquijo, J., Dimitrijevic, M. S., Domaracka, A., Doronin, M., Drouin, B. J., Endres, C. P., Fazliev, A. Z., Gagarin, S. V., Gordon, I. E., Gratier, P., Heiter, Ulrike, Hill, C., Jevremovic, D., Joblin, C., Kasprzak, A., Krishnakumar, E., Leto, G., Loboda, P. A., Louge, T., Maclot, S., Marinkovic, B. P., Markwick, A., Marquart, Thomas, Mason, H. E., Mason, N. J., Mendoza, C., Mihajlov, A. A., Millar, T. J., Moreau, N., Mulas, G., Pakhomov, Yu, Palmeri, P., Pancheshnyi, S., Perevalov, V. I., Piskunov, Nikolai, Postler, J., Quinet, P., Quintas-Sanchez, E., Ralchenko, Yu, Rhee, Y-J, Rixon, G., Rothman, L. S., Roueff, E., Ryabchikova, T., Sahal-Brechot, S., Scheier, P., Schlemmer, S., Schmitt, B., Stempels, Eric H. C., Tashkun, S., Tennyson, J., Tyuterev, Vl G., Vujcic, V., Wakelam, V., Walton, N. A., Zatsarinny, O., Zeippen, C. J., and Zwoelf, C. M.

Abstract

The Virtual Atomic and Molecular Data Centre (VAMDC) Consortium is a worldwide consortium which federates atomic and molecular databases through an e-science infrastructure and an organisation to support this activity. About 90% of the inter-connected databases handle data that are used for the interpretation of astronomical spectra and for modelling in many fields of astrophysics. Recently the VAMDC Consortium has connected databases from the radiation damage and the plasma communities, as well as promoting the publication of data from Indian institutes. This paper describes how the VAMDC Consortium is organised for the optimal distribution of atomic and molecular data for scientific research. It is noted that the VAMDC Consortium strongly advocates that authors of research papers using data cite the original experimental and theoretical papers as well as the relevant databases.

Published
2016
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5. The virtual atomic and molecular data centre (VAMDC) consortium

Author

Dubernet, M L, primary, Antony, B K, additional, Ba, Y A, additional, Babikov, Yu L, additional, Bartschat, K, additional, Boudon, V, additional, Braams, B J, additional, Chung, H-K, additional, Daniel, F, additional, Delahaye, F, additional, Zanna, G Del, additional, Urquijo, J de, additional, Dimitrijević, M S, additional, Domaracka, A, additional, Doronin, M, additional, Drouin, B J, additional, Endres, C P, additional, Fazliev, A Z, additional, Gagarin, S V, additional, Gordon, I E, additional, Gratier, P, additional, Heiter, U, additional, Hill, C, additional, Jevremović, D, additional, Joblin, C, additional, Kasprzak, A, additional, Krishnakumar, E, additional, Leto, G, additional, Loboda, P A, additional, Louge, T, additional, Maclot, S, additional, Marinković, B P, additional, Markwick, A, additional, Marquart, T, additional, Mason, H E, additional, Mason, N J, additional, Mendoza, C, additional, Mihajlov, A A, additional, Millar, T J, additional, Moreau, N, additional, Mulas, G, additional, Pakhomov, Yu, additional, Palmeri, P, additional, Pancheshnyi, S, additional, Perevalov, V I, additional, Piskunov, N, additional, Postler, J, additional, Quinet, P, additional, Quintas-Sánchez, E, additional, Ralchenko, Yu, additional, Rhee, Y-J, additional, Rixon, G, additional, Rothman, L S, additional, Roueff, E, additional, Ryabchikova, T, additional, Sahal-Bréchot, S, additional, Scheier, P, additional, Schlemmer, S, additional, Schmitt, B, additional, Stempels, E, additional, Tashkun, S, additional, Tennyson, J, additional, Tyuterev, Vl G, additional, Vujčić, V, additional, Wakelam, V, additional, Walton, N A, additional, Zatsarinny, O, additional, Zeippen, C J, additional, and Zwölf, C M, additional

Published
2016
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8. R-matrix calculation of low-energy electron collisions with LiH

Author

Antony, B. K., Joshipura, K. N., Mason, N. J., and Tennyson, J.

Abstract

Calculations are performed for electron scattering from LiH. These show that use of a close-coupled expansion gives results significantly different from calculations performed at the static exchange level employed in all previous calculations. In particular the close-coupled calculations find a Feshbach resonance which follows the first excited, a3Σ-, state curve. This resonance could provide a route to dissociative attachment and electron impact vibrational excitation. Elastic scattering cross sections, which are very large, as well as inelastic cross sections for excitation to the four lowest electronically excited states are presented as a function of LiH bond length.

Published
2004

17. Theoretical and Experimental Analysis Of Barrier Distribution In Nearly Ideal Schottky Diodes.

Author

Bobby, A., Shiwakoti, N., and Antony, B. K.

Subjects
SCHOTTKY barrier diodes, CRYSTAL structure, X-ray diffraction, SINGLE crystals, GAUSSIAN distribution, FABRICATION (Manufacturing)
Abstract

Au/n-Si Schottky diodes with nearly ideal behavior were fabricated. The conduction mechanisms and bias dependent behavior of the prepared device at different temperatures were investigated experimentally hand in hand with theoretical methods. The barrier of the diode follows a Gaussian distribution consistent with thermionic emission model, which is unaffected with applied bias. The temperature dependent non-idealities in barrier height and ideality factor were explained on the basis of Si self-interstitials at the interface that has formed during the fabrication process. [ABSTRACT FROM AUTHOR]

Published
2015
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