136 results on '"Aoulaiche, Marc"'
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2. Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM
3. Behavior of triple-gate Bulk FinFETs with and without DTMOS operation
4. Study of nitrogen impact on VFB–EOT roll-off by varying interfacial SiO 2 thickness
5. Stress memorization technique-fundamental understanding and low-cost integration for advanced CMOS technology using a nonselective process
6. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results
7. Effects of [Al.sub.2][O.sub.3] dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications
8. Electrical characteristics of 8 Angstrom EOT Hf[O.sub.2]/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions
9. Electrical and physical characterization of remote plasma oxidized Hf[O.sub.2] gate dielectrics
10. Influence of Proton Irradiation in Bulk and DTMOS Triple Gate FinFETs
11. Analysis of UTBOX 1T-DRAM Memory Cell at High Temperatures
12. Low-Frequency Noise Study of p-Channel Bulk MuGFETs
13. Larger Intrinsic Voltage Gain Achieved with UTBOX SOI Devices and Thin Silicon Film
14. Gateless 1T-DRAM on n-Channel Bulk FinFETs
15. Overview of 3D NAND Technologies and Outlook Invited Paper
16. Diffusion and Gate Replacement: A New Gate-First High- $k$ /Metal Gate CMOS Integration Scheme Suppressing Gate Height Asymmetry
17. Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices
18. Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs
19. Increase in Oxide Trap Density Due to the Implementation of High-k and Al2O3 Cap Layers in Thick-Oxide Input-Output Transistors for DRAM Applications
20. Off-state stress degradation mechanism on advanced p-MOSFETs
21. Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs
22. Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View
23. Distinction between silicon and oxide traps using single-trap spectroscopy
24. Towards single‐trap spectroscopy: Generation‐recombination noise in UTBOX SOI nMOSFETs
25. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
26. Study of ΔID/ID of a single charge trap in utbox silicon films
27. Impact of Electrode Composition and Processing on the Low-Frequency Noise in SrTio3 MIM Capacitors
28. Impact of Off State Stress on advanced high-K metal gate NMOSFETs
29. Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs
30. Advanced PBTI reliability with 0.69 nm EOT GdHfO gate dielectric
31. Trapping in 1nm EOT high-k/MG
32. Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time
33. Thermal stability and reliability in SiGe pMOSFETs for sub-20nm DRAM applications
34. Endurance of One Transistor Floating Body RAM on UTBOX SOI
35. Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs
36. Semiconductor film band gap influence on retention time of UTBOX SOI 1T-DRAM using pulsed back gate bias
37. Two-sided read window observed on UTBOX SOI 1T-DRAM
38. (Invited) Advanced Dielectrics Targeting 2X DRAM MIM Capacitors
39. Lessons Learned from Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-On-Insulator nMOSFETs
40. Two- and Three-Dimensional Fully-Depleted Extension-Less Devices for Advanced Logic and Memory Applications
41. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs
42. Dependence of Generation–Recombination Noise With Gate Voltage in FD SOI MOSFETs
43. Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM
44. Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices
45. The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering
46. (Invited) Low Frequency Noise Performance of State-of-the-Art and Emerging CMOS Devices
47. Low-frequency noise behaviour of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
48. Interface Trap Characterization of a 5.8-$\hbox{\rm{ \AA}}$ EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique
49. Advanced PBTI reliability with 0.69nm EOT GdHfO gate dielectric
50. Study of nitrogen impact on VFB–EOT roll-off by varying interfacial SiO2 thickness
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