1. Progress Toward Superconductor Electronics Fabrication Process With Planarized NbN and NbN/Nb Layers
- Author
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Sergey K. Tolpygo, Justin L. Mallek, Vladimir Bolkhovsky, Ravi Rastogi, Evan B. Golden, Terence J. Weir, Leonard M. Johnson, and Mark A. Gouker
- Subjects
Superconductivity (cond-mat.supr-con) ,Condensed Matter - Materials Science ,Condensed Matter - Superconductivity ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences ,Applied Physics (physics.app-ph) ,Physics - Applied Physics ,Electrical and Electronic Engineering ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials - Abstract
To increase density of superconductor digital and neuromorphic circuits by 10x and reach integration scale of $10^8$ Josephson junctions (JJs) per chip, we developed a new fabrication process on 200-mm wafers, using self-shunted Nb/Al-AlOx/Nb JJs and kinetic inductors. The process has a layer of JJs, a layer of resistors, and 10 fully planarized superconducting layers: 8 Nb layers and 2 layers of high kinetic inductance materials, Mo$_2$N and NbN, with sheet inductance of 8 pH/sq and 3 pH/sq, respectively. NbN films were deposited by two methods: with $T_c$=15.5 K by reactive sputtering of a Nb target in Ar+N$_2$ mixture; with $T_c$ in the range from 9 K to 13 K by plasma-enhanced chemical vapor deposition (PECVD) using Tris(diethylamido)(tert-butylimido)niobium(V) metalorganic precursor. PECVD of NbN was investigated to obtain conformal deposition and filling narrow trenches and vias with high depth-to-width ratios, which was not possible to achieve using sputtering and other physical vapor deposition (PVD) methods at temperatures below $200 ^oC$ required to prevent degradation of Nb/Al-AlOx/Nb junctions. Nb layers with 200 nm thickness are used in the process layer stack as ground planes to maintain a high level of interlayer shielding and low intralayer mutual coupling, for passive transmission lines with wave impedances matching impedances of JJs, typically, Comment: 12 pages, 16 figures, 4 tables, 49 references. Submitted to IEEE TAS on Nov. 10, 2022
- Published
- 2023