124 results on '"Asano, Katsunori"'
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2. Cause of Forward Voltage Degradation for 4H-SiC PiN Diode with Additional Process
3. Effectiveness of three types of lumbar orthosis for restricting extension motion
4. Selective Heteroepitaxial Growth of MgO/YBaCuO System and Application to New Electronic Devices
5. Fast epitaxial growth of high-purity 4H-SiC( $$000\bar 1$$ ) in a vertical hot-wall chemical vapor deposition) in a vertical hot-wall chemical vapor deposition
6. Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
7. 8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
8. Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors.
9. High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes.
10. Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs
11. 高耐圧SiC FET及びダイオードの電力変換回路への適用に関する基礎的研究
12. Development of Ultrahigh-Voltage SiC Devices
13. Static and dynamic performance evaluation of > 13 kV SiC p-channel IGBTs at high temperatures
14. Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT
15. Development of ultrahigh voltage SiC power devices
16. Minimum gate trigger current degradation in 4.5 kV 4H-SiC commutated gate turn-off thyristor
17. Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
18. 13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
19. High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode
20. Open circuit voltage decay characteristics of 4H-SiC p–i–n diode with carbon implantation
21. Ultrahigh voltage SiC bipolar devices
22. Conductivity Degradation of 4H-SiC p–i–n Diode with In-Grown Stacking Faults
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24. Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime
25. Simulation of TEDREC Phenomena for 4H-SiC Pin Diode with p/n Type Drift Layer
26. Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices
27. Stability Investigation of High Heat-Resistant Resin under High Temperature for Ultra-High Blocking Voltage SiC Devices
28. Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode
29. Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation
30. Characteristics of a 4H-SiC Pin Diode With Carbon Implantation/Thermal Oxidation
31. SiC Zener Diode for Gate Protection of 4.5 kV SiCGT
32. Lifetime Control of 4.5 kV SiCGT by High-Energy Electron Irradiation
33. Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode
34. Thermal characteristics of 3kV, 600A 4H-SiC flat-package pn diodes
35. Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers
36. High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes
37. Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters
38. Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT
39. Heavily Electron-irradiated High Resistive 4H-SiC pin diode for Turn-on Snubber of 200kVA Class High Power SiCGT Inverter
40. Study of Thermal Characteristic for 3kV 600A 4H-SiC Flat Package Type pn Diodes
41. Study of reverse recovery characteristic for 3-kV 600-A 4H-SiC flat package type pn diodes
42. Study of Reverse Recovery Characteristic for 3kV 600A 4H-SiC Flat Package Type pn Diodes
43. Cause of Forward Voltage Degradation for 4H-SiC PiN Diode with Additional Process.
44. Electric Characteristics of 5 kV Novel 4H-SiC "SEMOSFET"
45. Study of Static Characteristic for 3 kV 600 A 4H-SiC Flat Package Type pn Diodes
46. Temperature dependence of On-state characteristics, and Switching characteristics of 5 kV class 4H-SiC SEJFET
47. Electric characteristics of normally-off type 5 kV class 4H-SiC JFET, "SEJEET"
48. Simple circuit model of SiC pin diode composed by using experimental electrical characteristics
49. Dynamic Characteristics of 6.2 kV High Voltage 4H-SiC pn Diode with Low Loss
50. Static Characteristics of 6.2kV High Voltage 4H-SiC pin Diode with Low Loss
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