183 results on '"Aufinger, K."'
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2. A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions
3. Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit
4. Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit
5. Monolithic Transformer-Coupled RF Power Amplifiers in Si-Bipolar
6. A 117 GHz Dual-Modulus Prescaler With Inductive Peaking for a Programmable Frequency Divider
7. Silizium-Bipolartechnologien für die Mobilkommunikation
8. Advances in Aging Compact Model for Hot Carrier Degradation in SiGe HBTs under Dynamic Operating conditions for reliability-aware circuit design
9. Selective epitaxial growth of SiGe:C for high speed HBTs
10. Integration of SiGe HBT with <tex>$\text{f}_{\text{T}}=305\ \text{GHz},\ \text{f}_{\max}=537 \text{GHz}$</tex> in 130nm and 90nm CMOS
11. W-band low-power millimeter-wave direct down converter using SiGe HBTs in saturation region
12. A 32-48 GHz Differential YIG Oscillator With Low Phase Noise Based On a SiGe MMIC
13. Integration of SiGe HBT with $\text{f}_{\text{T}}=305\ \text{GHz},\ \text{f}_{\max}=537 \text{GHz}$ in 130nm and 90nm CMOS
14. Broadband multi-octave receiver from 1–32 GHz for monolithic integrated vector network analyzers (VNA) in SiGe-technology
15. A 94 GHz programmable frequency divider with inductive peaking for wideband and highly stable frequency synthesizers
16. Influence of the BEOL metallization design on the overall performances of SiGe HBTs
17. Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations
18. A 24 GHz wideband monostatic FMCW radar system based on a single-channel SiGe bipolar transceiver chip
19. Bias point optimization for low power/low noise applications of advanced SiGe HBT
20. SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project
21. Compact Model Validation Strategies Based on Dedicated and Benchmark Circuit Blocks for the mm-Wave Frequency Range
22. An 80 GHz programmable frequency divider for wideband mm-Wave frequency ramp synthesis
23. Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs
24. A monolithic 5.8 GHZ power amplifier in a 25 GHZ FT Silicon Bipolar technology
25. Dynamic electrothermal macromodeling techniques for thermal-aware design of circuits and systems
26. A 57 GHz programmable frequency divider for fractional-N frequency synthesizers
27. 125 to 181 GHz fundamental-wave VCO chips in SiGe technology
28. Experimental extraction of the base resistance of SiGe:C HBTs beyond BVCEO: An improved technique
29. Scalable compact modeling for SiGe HBTs suitable for microwave radar applications
30. Advanced process modules and architectures for half-terahertz SiGe:C HBTs
31. Pushing the speed limits of SiGe:C HBTs up to 0.5 Terahertz
32. A low noise, high gain, highly linear mixer for 77 GHz automotive radar applications in SiGe:C bipolar technology
33. A 19GHz DRO downconverter MMIC for 77GHz automotive radar frontends in a SiGe bipolar production technology
34. A 77GHz 4-channel automotive radar transceiver in SiGe
35. Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies
36. A 19GHz VCO downconverter MMIC for 77GHz automotive radar frontends in a SiGe bipolar production technology
37. Simultaneous Integration of SiGe High Speed Transistors and High Voltage Transistors
38. 100-Gb/s 2/sup 7/-1 and 54-Gb/s 2/sup 11/-1 PRBS generators in SiGe bipolar technology
39. A low-noise amplifier at 77 GHz in SiGe:C bipolar technology
40. Silicon-based RF ICs up to 100 GHz: research trends and applications
41. A 140-GHz single-chip transceiver in a SiGe technology.
42. Bias point optimization for low power / low noise applications of advanced SiGe HBT.
43. A low-power 80 GHz FMCW radar transmitter with integrated 23 GHz downconverter VCO.
44. Integrated injection logic in a high-speed SiGe bipolar technology.
45. Modeling and parameter extraction of SiGe: C HBT's with HICUM for the emerging terahertz era.
46. A high-linearity broadband 55 – 77 GHz differential low-noise amplifier with 20 dB gain in SiGe technology.
47. Static frequency dividers up to 133GHz in SiGe:C bipolar technology.
48. Investigation and reduction of frequency pulling in SiGe mm-wave VCOs at limited power consumption.
49. 168 GHz dynamic frequency divider in SiGe:C bipolar technology.
50. An 80 GHz SiGe Bipolar VCO with Wide Tuning Range Using Two Simultaneously Tuned Varactor Pairs.
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